My Inquiry
My Account
Vishay General Semiconductor - Diodes Division VTVS33ASMF-M3-08
- Part No.:
- VTVS33ASMF-M3-08
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
VTVS33ASMF-M3-08.pdf
- Description:
- TVS DIODE 33.3VWM 55VC DO219AB
- Quantity:
- Payment:
- Shipping:
Inventory:29,033
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VTVS33ASMF-M3-08 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for ESD and surge protection of low-voltage DC lines such as USB, HDMI, and automotive sensor interfaces. It features a 33.3 V stand-off voltage (VRWM), 37.1–41.0 V reverse breakdown voltage (VBR) at 1 mA, and clamps to ≤55 V at 6.91 A peak pulse current (10/1000 μs).
For engineers reviewing the VTVS33ASMF-M3-08 datasheet, VTVS33ASMF-M3-08 pinout, VTVS33ASMF-M3-08 application, or VTVS33ASMF-M3-08 equivalent, this device is selected for robust ±30 kV IEC 61000-4-2 ESD protection, low-profile SMT integration in space-constrained automotive and industrial PCBs, and stable clamping performance across -55 °C to +175 °C junction temperature range.
Technical Context
This TVS diode operates in avalanche mode to divert transient energy away from sensitive circuitry. Its unidirectional polarity enables protection of positive-rail-only signal paths, and its 2095 pF typical capacitance at 0 V bias supports moderate-speed data lines without excessive signal distortion.
The SMF package delivers thermal resistance of 20 K/W (junction-to-lead, mounted on infinite heat sink) and supports wave and reflow soldering per J-STD-020 MSL level 1. It is halogen-free, RoHS-compliant, and AEC-Q101 qualified for automotive use.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power | 400 W (10/1000 μs waveform - sustains high-energy surges without failure) |
| Stand-off Voltage (VRWM) | 33.3 V (maximum continuous DC operating voltage before leakage exceeds 0.05 μA) |
| Breakdown Voltage (VBR) | 37.1–41.0 V at IT = 1 mA (tight ±5 % tolerance ensures predictable turn-on threshold) |
| Clamping Voltage (VC) | ≤55 V at IPPM = 6.91 A (limits downstream voltage stress during transients) |
| ESD Rating | ±30 kV contact / ±30 kV air discharge (IEC 61000-4-2 - exceeds Level 4 immunity) |
| Junction Temperature Range | -55 °C to +175 °C (enables deployment in under-hood automotive and industrial environments) |
| Capacitance | 379 pF at VR = 0 V, f = 1 MHz (compatible with <100 Mbps data lines; avoids signal integrity issues) |
Pinout & Package
SMF (DO-219AB) low-profile surface-mount package: 3.9 mm × 1.9 mm × 1.08 mm, cathode marked by bar on top surface. Compatible with SOD-123W footprint and reflow profiles up to 260 °C peak.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry during forward conduction; tied to protected line's ground or low-side reference | Provides return path for transient current when device conducts in forward direction (e.g., during negative surges in bidirectional setups with external bias) |
| Cathode | Transient current sink; connected to protected signal line or power rail | Acts as the primary clamping node - voltage at cathode rises no higher than VC during surge, shielding downstream IC inputs |
Key Features
| Feature | Design Value |
|---|---|
| "Low-Noise" fast response | Sub-nanosecond turn-on time minimizes voltage overshoot before clamping engages |
| Wave and reflow solderable | Qualified for standard Pb-free reflow profiles (peak ≤260 °C), eliminating hand-soldering risk |
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS sensors |
| Halogen-free & RoHS-compliant | Meets environmental compliance requirements for global OEM supply chains and industrial certifications |
| Low-profile SMF package | 1.08 mm height enables placement beneath connectors or in tight board-to-board interfaces |
Applications
| Automotive Sensor Interface | USB 2.0 Data Line Protection |
|---|---|
|
Use Scenario: Protecting LIN bus or analog sensor outputs (e.g., pressure, temperature) in engine control modules exposed to load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor output and microcontroller ADC input to clamp transients before they exceed absolute maximum ratings. Use Value: Maintains 33.3 V VRWM margin above nominal 5 V or 12 V sensor supply while delivering ≤55 V clamping at 6.91 A - preventing ADC saturation or latch-up. |
Use Scenario: Safeguarding D+ and D- lines of USB 2.0 ports against ESD events during hot-plug insertion in industrial HMIs and automotive infotainment systems. IC Role / Device Role / Timing Role: Bidirectional protection implemented using two VTVS33ASMF-M3-08 devices (cathode-to-cathode) to handle ±30 kV contact discharge without signal degradation. Use Value: 379 pF capacitance preserves signal integrity up to 480 Mbps; ±30 kV rating exceeds IEC 61000-4-2 Level 4, eliminating need for external series resistors. |
| Industrial CAN Bus Node | DC Power Input Protection |
|
Use Scenario: Shielding CAN transceiver I/O pins from ESD and coupled transients in factory automation controllers operating in electrically noisy environments. IC Role / Device Role / Timing Role: Placed between CAN_H/CAN_L and transceiver, referenced to local ground, to shunt fast transients before propagation into silicon. Use Value: Fast response and 55 V clamping prevent transceiver damage during ±30 kV ESD strikes; 175 °C max TJ supports operation near motor drives or power supplies. |
Use Scenario: Protecting 24 V DC input rails of programmable logic controllers (PLCs) and IoT gateways against indirect lightning surges and switching transients. IC Role / Device Role / Timing Role: Mounted at board edge, anode grounded, cathode tied to input rail to clamp overvoltage spikes before reaching bulk capacitors and regulators. Use Value: 400 W peak pulse power handles 10/1000 μs surges up to 6.91 A; 33.3 V VRWM provides headroom above 24 V nominal while avoiding false triggering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ33A-E3/57T | Same VRWM (33 V), but SMA package (DO-214AC); 400 W rating; ±5 % VBR tolerance; 38.5–42.5 V VBR range | Larger footprint (4.5 × 2.7 mm vs. 3.9 × 1.9 mm); higher thermal resistance (35 K/W vs. 20 K/W) | Select when legacy SMA layout exists or higher mechanical robustness is prioritized over board space |
| 1.5SMC33A | Same VRWM (33 V), but SMC package (DO-214AB); 1500 W rating; ±5 % VBR; 36.7–40.4 V VBR range | Higher power handling but 7.1 × 6.2 mm footprint; not AEC-Q101 qualified; 1000 pF capacitance limits data-line use | Select only for high-energy surge zones (e.g., AC/DC front-end) where size and capacitance are secondary to energy absorption |
Compared with SMAJ33A-E3/57T and 1.5SMC33A, VTVS33ASMF-M3-08 offers superior board-space efficiency, lower thermal resistance, AEC-Q101 qualification, and optimized capacitance for data-line protection - making it preferred for modern automotive and compact industrial designs where footprint and ESD immunity are critical.
Availability
VTVS33ASMF-M3-08 is available at Aetrix Electronics and suitable for automotive sensor interfaces, USB 2.0 data line protection, and industrial DC power input circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for VTVS33ASMF-M3-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The VTVS series targets high-speed, low-capacitance ESD and surge protection for automotive electronics and industrial interfaces, emphasizing AEC-Q101 qualification, tight VBR tolerance, and compact eSMP® packaging.
FAQ
What is the maximum clamping voltage of the VTVS33ASMF-M3-08 under rated surge conditions?
The VTVS33ASMF-M3-08 clamps to a maximum of 55 V when subjected to its rated peak pulse current of 6.91 A (10/1000 μs waveform). This value is measured at the device terminals and defines the upper voltage limit imposed on protected circuitry during transient events, ensuring downstream components remain within safe operating voltage ranges.
Is the VTVS33ASMF-M3-08 suitable for protecting high-speed data lines like USB 2.0?
Yes, the VTVS33ASMF-M3-08 is suitable for USB 2.0 data line protection due to its 379 pF typical capacitance at 0 V bias and sub-nanosecond response time. When used in cathode-to-cathode configuration, it provides bidirectional ±30 kV ESD protection without degrading signal integrity up to 480 Mbps - meeting USB-IF compliance requirements for host and peripheral ports.
Does the VTVS33ASMF-M3-08 meet automotive qualification standards?
Yes, the VTVS33ASMF-M3-08 is AEC-Q101 qualified, confirming its reliability for automotive applications including engine control units, body electronics, and ADAS sensor nodes. It operates across -55 °C to +175 °C junction temperature and passes stress tests for humidity, temperature cycling, and mechanical shock per the AEC-Q101 standard.
What is the meaning of "-M3-08" in the part number VTVS33ASMF-M3-08?
The suffix "-M3-08" in VTVS33ASMF-M3-08 indicates tape-and-reel packaging: "M3" denotes 3 k per 7″ reel (8 mm tape), and "-08" specifies RoHS-compliant, lead (Pb)-free, tin-plated terminations. This packaging format supports automated SMT assembly and meets environmental compliance requirements for global electronics manufacturing.
How does the VTVS33ASMF-M3-08 compare to older SMAJ-series TVS diodes in terms of thermal performance?
The VTVS33ASMF-M3-08 achieves a thermal resistance of 20 K/W (junction-to-lead) due to its SMF (DO-219AB) package and optimized leadframe design, compared to ~35 K/W for SMAJ33A-E3/57T in SMA (DO-214AC) package. This 43 % lower RthJL enables more efficient heat dissipation during repetitive surge events, improving long-term reliability in thermally constrained automotive and industrial layouts.
VTVS33ASMF-M3-08 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33.3V
- Voltage - Breakdown (Min):
- 37.1V
- Voltage - Clamping (Max) @ Ipp:
- 55V
- Current - Peak Pulse (10/1000µs):
- 6.91A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 379pF @ 1MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
VTVS33ASMF-M3-08 FAQ
1.How can I place an order for VTVS33ASMF-M3-08 through Aetrix?
Please submit a Request for Quotation (RFQ) for VTVS33ASMF-M3-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VTVS33ASMF-M3-08 reliable?
The price and inventory of VTVS33ASMF-M3-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS33ASMF-M3-08 is usually 5 days.
3.What payment methods are accepted for VTVS33ASMF-M3-08?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS33ASMF-M3-08 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VTVS33ASMF-M3-08?
VTVS33ASMF-M3-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VTVS33ASMF-M3-08 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VTVS33ASMF-M3-08?
For technical support, including VTVS33ASMF-M3-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS33ASMF-M3-08 requirements.
6.How does Aetrix verify that VTVS33ASMF-M3-08 is sourced from the original manufacturer or authorized distributors?
All VTVS33ASMF-M3-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS33ASMF-M3-08 meets industry standards.
7.What is the process for return or replacement of VTVS33ASMF-M3-08?
All VTVS33ASMF-M3-08 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS33ASMF-M3-08, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VTVS33ASMF-M3-08 part is unused and in its original packaging.
Return procedure for VTVS33ASMF-M3-08:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VTVS33ASMF-M3-08 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
