My Inquiry
My Account
Vishay General Semiconductor - Diodes Division VTVS33GSMF-M3-08
- Part No.:
- VTVS33GSMF-M3-08
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
VTVS33GSMF-M3-08.pdf
- Description:
- TVS DIODE 33.3VWM 55VC DO219AB
- Quantity:
- Payment:
- Shipping:
Inventory:8,288
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VTVS33GSMF-M3-08 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for ESD and surge protection of 33 V DC power rails and signal lines. It features 33.3 V maximum stand-off voltage, 38.27–39.84 V reverse breakdown at 1 mA, 55 A peak pulse current (10/1000 μs), and clamps to ≤55 V under full surge stress - deployed in automotive infotainment power inputs and industrial sensor interfaces.
For engineers reviewing the VTVS33GSMF-M3-08 datasheet, VTVS33GSMF-M3-08 pinout, VTVS33GSMF-M3-08 application, or VTVS33GSMF-M3-08 equivalent, key selection criteria include ±2 % VBR tolerance, 379 pF junction capacitance at 0 V, IEC 61000-4-2 ±30 kV contact/air discharge compliance, and AEC-Q101 qualification status for automotive-grade reliability.
Technical Context
This device operates as a unidirectional avalanche diode with low-clamping, fast-response "Low-Noise" technology optimized for protecting 33 V systems against ESD transients and lightning-induced surges. Its 10/1000 μs waveform rating delivers 400 W peak pulse power while maintaining thermal resistance of 20 K/W to lead under infinite heat sink conditions.
The SMF (DO-219AB) package enables wave and reflow soldering with MSL level 1 moisture sensitivity, halogen-free molding compound (UL 94 V-0), and a compact 3.9 × 1.9 × 1.08 mm footprint compatible with SOD-123W layout patterns - supporting high-density PCB designs requiring robust overvoltage immunity without board area penalty.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 33.3 V max - ensures stable operation up to rated DC working voltage without leakage-triggered conduction |
| VBR @ 1 mA | 38.27–39.84 V - tight ±2 % tolerance enables precise overvoltage threshold setting in 33 V systems |
| IPPM | 55 A (10/1000 μs) - sustains high-energy transients typical of ISO 7637-2 pulse 1/2a in automotive electronics |
| VC @ IPPM | ≤55 V - limits downstream IC voltage stress during full-rated surge, preserving 3.3 V/5 V logic integrity |
| CD @ 0 V, 1 MHz | 379 pF - balances ESD robustness and signal integrity for low-speed data lines (e.g., LIN, CAN standby) |
| ESD Rating | ±30 kV contact / ±30 kV air (IEC 61000-4-2) - exceeds Level 4 immunity for exposed connectors and buttons |
| TJ Range | −55 °C to +175 °C - supports under-hood and industrial control environments without derating |
Pinout & Package
SMF (DO-219AB) surface-mount package: 3.9 mm length × 1.9 mm width × 1.08 mm height, cathode marked by bar on top surface, compatible with SOD-123W footprints and reflow profiles up to 260 °C peak.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Ground reference terminal | Connected to system ground or low-side return path; defines unidirectional conduction direction |
| Cathode | Protected line terminal | Connected to line being protected (e.g., 33 V rail); avalanche conduction occurs from cathode to anode during overvoltage |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power (10/1000 μs) | Enables single-device protection against severe load dump and inductive switching events in 33 V systems |
| ±2 % VBR tolerance (G-series) | Reduces design margin uncertainty and eliminates need for post-production VBR binning in high-reliability applications |
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, mechanical shock, and humidity testing per JESD22 standards |
| Halogen-free, RoHS-compliant | Meets automotive OEM material declarations (e.g., GMW3172, Ford WSS-M99P9999-A1) and EU environmental requirements |
| MSL level 1, reflow-compatible | Eliminates baking preconditioning; supports standard Pb-free reflow profiles without popcorn or delamination risk |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 33 V supply input of head unit power management ICs against load dump and jump-start transients. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between 33 V rail and chassis ground, clamping within 1 ns to limit voltage overshoot. Use Value: Prevents damage to buck converter controllers and PMICs during ISO 7637-2 Pulse 5a (75 V/350 ms), maintaining system uptime. |
Use Scenario: Safeguarding analog output lines of pressure sensors in hydraulic control modules exposed to ESD from operator touch. IC Role / Device Role / Timing Role: Low-capacitance TVS connected across sensor output and ground to shunt ±30 kV ESD pulses before reaching ADC front-end. Use Value: Maintains signal fidelity (<0.5 % gain error) while meeting IEC 61000-4-2 Level 4 without adding RC filtering delay. |
| Telecom Base Station DC Feeds | Medical Imaging Power Rail Protection |
|
Use Scenario: Surge suppression on −48 V DC backup feed lines in remote radio units subject to lightning-induced surges. IC Role / Device Role / Timing Role: Reverse-biased unidirectional TVS absorbing 400 W transients on negative rail, referenced to system ground. Use Value: Survives multiple 10/1000 μs surges up to 55 A without parameter shift, extending field service life beyond 10 years. |
Use Scenario: Overvoltage protection of 33 V motor driver supplies in MRI gantry motion control subsystems. IC Role / Device Role / Timing Role: Primary clamping device on motor driver VDD rail, coordinated with secondary ceramic varistors for multi-stage protection. Use Value: Limits rail voltage to ≤55 V during IEC 61000-4-5 Line-to-Ground surges, preventing gate oxide rupture in MOSFET drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ33A-E3/57T | ±5 % VBR, 33 V nominal, 400 W, SMA package (DO-214AC), higher RthJA | Larger footprint (4.5 × 2.7 mm), lower thermal performance; suited for non-automotive cost-sensitive designs | Select when AEC-Q101 qualification is not required and board space allows larger package |
| TPSMD33A | ±5 % VBR, 33 V nominal, 400 W, SMC package (DO-214AB), 100 pF CD | Lower capacitance but larger size (7.1 × 6.2 mm); better for high-speed data lines, less suitable for dense 33 V power routing | Choose for mixed-signal boards where low capacitance outweighs space constraints and automotive qualification is optional |
Compared with SMAJ33A-E3/57T and TPSMD33A, VTVS33GSMF-M3-08 offers tighter ±2 % breakdown tolerance, AEC-Q101 validation, and smallest footprint among 400 W 33 V TVS diodes - making it optimal for space-constrained automotive and industrial modules requiring production-grade reliability.
Availability
VTVS33GSMF-M3-08 is available at Aetrix Electronics and suitable for automotive infotainment power inputs, industrial sensor interfaces, telecom DC feeds, and medical imaging power rails requiring stable component supply with guaranteed long-term continuity.
Supply support for VTVS33GSMF-M3-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The TransZorb® eSMP® Series - including VTVS33GSMF-M3-08 - was engineered specifically for high-power, low-profile transient suppression in harsh-environment electronics where AEC-Q101 compliance and minimal board area are critical.
FAQ
What is the exact breakdown voltage range for VTVS33GSMF-M3-08 at 1 mA test current?
The VTVS33GSMF-M3-08 has a reverse breakdown voltage (VBR) range of 38.27 V to 39.84 V at TJ = 25 °C and IT = 1 mA, reflecting its ±2 % tolerance grade. This tight specification ensures predictable clamping behavior in 33 V systems and reduces design margin uncertainty compared to ±5 % alternatives. The VTVS33GSMF-M3-08 datasheet confirms this range in Table 1 under "Electrical Characteristics."
Is VTVS33GSMF-M3-08 qualified to AEC-Q101, and what does that cover?
Yes, VTVS33GSMF-M3-08 is AEC-Q101 qualified, meaning it has passed stress tests including high-temperature operating life, temperature cycling, mechanical shock, and ESD per JESD22 standards. This qualification validates its suitability for automotive powertrain, body, and infotainment applications where reliability under thermal and vibration stress is mandatory. The VTVS33GSMF-M3-08 product family documentation explicitly states AEC-Q101 availability in the Ordering Information section.
What is the maximum clamping voltage of VTVS33GSMF-M3-08 under full-rated surge current?
The VTVS33GSMF-M3-08 clamps to a maximum of 55 V when subjected to its full-rated 55 A peak pulse current (10/1000 μs waveform). This value is specified as VC in the Electrical Characteristics table and represents the worst-case voltage seen by downstream circuitry during surge events - critical for ensuring compatibility with 33 V-rated ICs and preventing latch-up or overvoltage damage. The VTVS33GSMF-M3-08 achieves this with low dynamic impedance and fast avalanche response.
Does VTVS33GSMF-M3-08 meet IEC 61000-4-2 ESD immunity requirements?
Yes, VTVS33GSMF-M3-08 provides ±30 kV contact discharge and ±30 kV air discharge immunity per IEC 61000-4-2, exceeding Level 4 requirements. This performance is achieved through its "Low-Noise" fast-response avalanche structure and low-junction-capacitance design. The VTVS33GSMF-M3-08 datasheet confirms these ratings in the Absolute Maximum Ratings table and Features section, making it suitable for protecting exposed ports in automotive and industrial equipment.
What is the package type and mounting compatibility of VTVS33GSMF-M3-08?
VTVS33GSMF-M3-08 uses the SMF (DO-219AB) package - measuring 3.9 × 1.9 × 1.08 mm - with cathode indicated by a bar marking. It is fully compatible with SOD-123W footprints and supports both wave and Pb-free reflow soldering (peak 260 °C). The VTVS33GSMF-M3-08 package data sheet specifies MSL level 1 handling and UL 94 V-0 flammability, enabling direct integration into high-density, automotive-grade PCB assemblies without layout changes.
VTVS33GSMF-M3-08 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33.3V
- Voltage - Breakdown (Min):
- 38.27V
- Voltage - Clamping (Max) @ Ipp:
- 55V
- Current - Peak Pulse (10/1000µs):
- 7.11A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 379pF @ 1MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
VTVS33GSMF-M3-08 FAQ
1.How can I place an order for VTVS33GSMF-M3-08 through Aetrix?
Please submit a Request for Quotation (RFQ) for VTVS33GSMF-M3-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VTVS33GSMF-M3-08 reliable?
The price and inventory of VTVS33GSMF-M3-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS33GSMF-M3-08 is usually 5 days.
3.What payment methods are accepted for VTVS33GSMF-M3-08?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS33GSMF-M3-08 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VTVS33GSMF-M3-08?
VTVS33GSMF-M3-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VTVS33GSMF-M3-08 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VTVS33GSMF-M3-08?
For technical support, including VTVS33GSMF-M3-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS33GSMF-M3-08 requirements.
6.How does Aetrix verify that VTVS33GSMF-M3-08 is sourced from the original manufacturer or authorized distributors?
All VTVS33GSMF-M3-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS33GSMF-M3-08 meets industry standards.
7.What is the process for return or replacement of VTVS33GSMF-M3-08?
All VTVS33GSMF-M3-08 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS33GSMF-M3-08, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VTVS33GSMF-M3-08 part is unused and in its original packaging.
Return procedure for VTVS33GSMF-M3-08:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VTVS33GSMF-M3-08 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
