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Vishay General Semiconductor - Diodes Division VTVS33GSMF-M3-18
- Part No.:
- VTVS33GSMF-M3-18
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
VTVS33GSMF-M3-18.pdf
- Description:
- TVS DIODE 33.3VWM 55VC DO219AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,942
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Product details
Overview
VTVS33GSMF-M3-18 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for ESD and surge protection of low-voltage DC lines. It features a 33.3 V maximum stand-off voltage (VRWM), 38.27–39.84 V reverse breakdown voltage (VBR) at 1 mA, and clamps to ≤55 V at 7.11 A peak pulse current (10/1000 μs), making it suitable for USB, HDMI, and automotive sensor interface protection.
For engineers reviewing the VTVS33GSMF-M3-18 datasheet, VTVS33GSMF-M3-18 pinout, VTVS33GSMF-M3-18 application, or VTVS33GSMF-M3-18 equivalent, key selection criteria include ±2 % VBR tolerance, 379 pF junction capacitance at 0 V, IEC 61000-4-2 ±30 kV contact/air discharge compliance, and AEC-Q101 qualification status - all critical for high-reliability signal-line protection in automotive and industrial electronics.
Technical Context
This device operates as a unidirectional avalanche diode with precise 33.3 V working voltage threshold, enabling robust overvoltage clamping before downstream ICs reach damage thresholds. Its low 20 K/W thermal resistance (RthJL) and 175 °C max junction temperature support sustained operation under repeated surge events in compact PCB layouts.
The SMF package delivers 1.08 mm height and 3.9 × 1.9 mm footprint - compatible with SOD-123W outlines - while maintaining full wave and reflow solderability per J-STD-020 MSL level 1. Its "Low-Noise" technology ensures sub-nanosecond response time, essential for protecting high-speed digital interfaces without signal integrity degradation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power | 400 W (10/1000 μs waveform; sustains single surges up to 400 W without failure) |
| Stand-Off Voltage VRWM | 33.3 V (maximum continuous reverse voltage before significant leakage; sets operating margin for 3.3 V–24 V rails) |
| Breakdown Voltage VBR | 38.27–39.84 V at 1 mA (±2 % tolerance; enables tight clamping window vs. ±5 % variants) |
| Clamping Voltage VC | ≤55 V at 7.11 A IPPM (limits voltage seen by protected IC during worst-case surge) |
| Junction Capacitance CD | 379 pF at 0 V, 1 MHz (low enough for USB 2.0 and CAN FD; avoids signal distortion) |
| ESD Rating | ±30 kV contact / ±30 kV air (IEC 61000-4-2; exceeds Level 4 immunity requirements) |
| Operating Temperature | −55 °C to +175 °C (supports under-hood automotive and industrial ambient extremes) |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case with cathode marking bar; dimensions 3.9 mm × 1.9 mm × 1.08 mm; compatible with SOD-123W footprint and reflow profiles up to 260 °C peak.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry during forward conduction | Connected to protected line's low-side reference (e.g., GND or return path); defines unidirectional clamping direction |
| Cathode | Current exit during reverse avalanche | Connected to protected signal line; conducts surge current to ground when voltage exceeds VRWM + margin |
Key Features
| Feature | Design Value |
|---|---|
| ±2 % VBR tolerance | Enables tighter clamping voltage control vs. ±5 % variants, reducing risk of false triggering on nominal transients |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD stress - required for powertrain and ADAS modules |
| Halogen-free molding compound | Meets RoHS and JEDEC J-STD-020 MSL level 1; supports lead-free assembly and environmental compliance |
| Low-profile SMF package | 1.08 mm height allows placement in space-constrained areas (e.g., connector backshells, PCB edges) without interfering with shields or enclosures |
| "Low-Noise" fast response | Sub-nanosecond turn-on prevents overshoot on high-slew-rate transients (e.g., ESD pulses), preserving signal fidelity |
Applications
| Automotive Sensor Interface | USB 2.0 Data Line Protection |
|---|---|
|
Use Scenario: Protecting LIN/CAN transceiver I/O pins and analog sensor outputs (e.g., pressure, temperature) in engine control units. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between signal line and chassis ground to clamp ESD and load-dump induced spikes. Use Value: With 33.3 V VRWM and 55 V clamping, it safeguards 3.3 V/5 V microcontrollers without interfering with normal 12 V supply rail noise margins. |
Use Scenario: Shielding D+ and D− lines of USB 2.0 ports against ESD events during hot-plug insertion in industrial HMIs and infotainment systems. IC Role / Device Role / Timing Role: Bidirectional-capable protection element (used in unidirectional configuration per line) with 379 pF capacitance to avoid data eye closure. Use Value: 379 pF capacitance at 0 V meets USB 2.0 impedance and timing specs; ±30 kV ESD rating exceeds IEC 61000-4-2 Level 4 requirements. |
| Industrial PLC Digital I/O | DC Power Rail Surge Suppression |
|
Use Scenario: Guarding 24 V digital input channels in programmable logic controllers against field-induced surges and inductive kickback. IC Role / Device Role / Timing Role: Standoff-rated TVS placed across input optocoupler terminals to shunt transients before they reach isolation barrier. Use Value: 33.3 V VRWM aligns with 24 V nominal system voltage; 400 W peak power handles repetitive 1 kV/500 A surge test pulses per IEC 61000-4-5. |
Use Scenario: Secondary-level surge suppression on 3.3 V or 5 V DC power distribution networks feeding FPGAs, ADCs, and RF front-ends. IC Role / Device Role / Timing Role: Low-leakage (0.05 μA at VRWM) clamping diode connected between VCC and GND to absorb localized transients without loading quiescent supply. Use Value: 0.05 μA reverse leakage minimizes standby current drain; 175 °C TJ max supports operation near heat-generating components like DC/DC converters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ33A-E3/57T | ±5 % VBR tolerance (36.7–42.2 V), higher 60 V clamping at 6.5 A, same SMF package | Less precise clamping window; better suited for non-critical 24 V industrial lines where tighter VBR not required | Select when cost sensitivity outweighs need for ±2 % VBR; verify system margin against 60 V VC |
| TPSMD33A | Same 33 V VRWM but ±5 % VBR, 600 W PPPM, larger SMC package (7.1 × 6.2 mm) | Higher power handling but 3× footprint area; requires PCB real estate and thermal relief design | Choose only if 400 W insufficient and layout permits larger SMC; avoid for space-constrained USB or sensor nodes |
Compared with SMAJ33A-E3/57T and TPSMD33A, VTVS33GSMF-M3-18 offers superior VBR precision and compactness for high-density automotive and portable electronics, while trading off absolute peak power for tighter clamping control and smaller board area.
Availability
VTVS33GSMF-M3-18 is available at Aetrix Electronics and suitable for automotive sensor interfaces, USB 2.0 data line protection, and industrial PLC digital I/O requiring stable component supply and long-term lifecycle assurance.
Supply support for VTVS33GSMF-M3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The TransZorb® eSMP® Series - including VTVS33GSMF-M3-18 - is engineered specifically for robust ESD and surge protection in space-constrained, high-temperature environments such as automotive ECUs and industrial control modules.
FAQ
What is the exact reverse breakdown voltage range for VTVS33GSMF-M3-18?
The VTVS33GSMF-M3-18 has a reverse breakdown voltage (VBR) of 38.27 V minimum to 39.84 V maximum at IT = 1 mA and TJ = 25 °C, reflecting its ±2 % tolerance grade. This tight VBR window ensures predictable clamping behavior and reduces design margin uncertainty compared to ±5 % variants. The VTVS33GSMF-M3-18 datasheet specifies these values in Table 1 under Electrical Characteristics.
Is VTVS33GSMF-M3-18 AEC-Q101 qualified?
Yes, VTVS33GSMF-M3-18 is AEC-Q101 qualified, meaning it has passed rigorous stress tests including high-temperature reverse bias (HTRB), temperature cycling, and ESD robustness per automotive reliability standards. This qualification confirms suitability for use in automotive powertrain, body electronics, and ADAS systems. The VTVS33GSMF-M3-18 product family documentation explicitly lists AEC-Q101 availability.
What is the junction capacitance of VTVS33GSMF-M3-18 and how does it affect high-speed signals?
The VTVS33GSMF-M3-18 exhibits 379 pF typical junction capacitance at VR = 0 V and f = 1 MHz. This value is low enough to avoid signal integrity issues on USB 2.0 (480 Mbps) and CAN FD (5 Mbps) lines, provided layout parasitics are minimized. Higher capacitance would degrade rise/fall times and increase bit error rates; the VTVS33GSMF-M3-18 balances clamping performance with acceptable high-frequency loading.
Can VTVS33GSMF-M3-18 be used in bidirectional configurations?
No, VTVS33GSMF-M3-18 is a unidirectional TVS diode, intended for clamping positive transients relative to ground. For bidirectional protection (e.g., AC lines or differential pairs), two VTVS33GSMF-M3-18 devices must be used in series opposition, or a dedicated bidirectional part like VTVS33BGS-M3-18 should be selected. The VTVS33GSMF-M3-18 polarity is fixed and marked with a cathode bar.
What is the maximum operating temperature and thermal resistance of VTVS33GSMF-M3-18?
VTVS33GSMF-M3-18 supports a junction temperature range of −55 °C to +175 °C and has a thermal resistance RthJL of 20 K/W when mounted on an infinite heat sink. This enables reliable operation in under-hood automotive environments and near high-power components. The VTVS33GSMF-M3-18 package (DO-219AB) is optimized for efficient heat transfer through its leads, supporting sustained surge duty cycles without thermal runaway.
VTVS33GSMF-M3-18 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33.3V
- Voltage - Breakdown (Min):
- 38.27V
- Voltage - Clamping (Max) @ Ipp:
- 55V
- Current - Peak Pulse (10/1000µs):
- 7.11A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 379pF @ 1MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
VTVS33GSMF-M3-18 FAQ
1.How can I place an order for VTVS33GSMF-M3-18 through Aetrix?
Please submit a Request for Quotation (RFQ) for VTVS33GSMF-M3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VTVS33GSMF-M3-18 reliable?
The price and inventory of VTVS33GSMF-M3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS33GSMF-M3-18 is usually 5 days.
3.What payment methods are accepted for VTVS33GSMF-M3-18?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS33GSMF-M3-18 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VTVS33GSMF-M3-18?
VTVS33GSMF-M3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VTVS33GSMF-M3-18 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VTVS33GSMF-M3-18?
For technical support, including VTVS33GSMF-M3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS33GSMF-M3-18 requirements.
6.How does Aetrix verify that VTVS33GSMF-M3-18 is sourced from the original manufacturer or authorized distributors?
All VTVS33GSMF-M3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS33GSMF-M3-18 meets industry standards.
7.What is the process for return or replacement of VTVS33GSMF-M3-18?
All VTVS33GSMF-M3-18 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS33GSMF-M3-18, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VTVS33GSMF-M3-18 part is unused and in its original packaging.
Return procedure for VTVS33GSMF-M3-18:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VTVS33GSMF-M3-18 Tags
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