Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division VTVS36GSMF-HM3-18

Part No.:
VTVS36GSMF-HM3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-219AB
Datasheet:
AetrixVTVS36GSMF-HM3-18.pdf
Description:
TVS DIODE 36VWM 61VC DO219AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,541

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

VTVS36GSMF-HM3-18 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, with 36.0 V stand-off voltage (VRWM), ±2 % breakdown voltage tolerance, and 61 A peak pulse current (IPPM) under 10/1000 μs waveform - designed for ESD and surge protection of automotive power rails and industrial I/O interfaces.

For engineers reviewing the VTVS36GSMF-HM3-18 datasheet, VTVS36GSMF-HM3-18 pinout, VTVS36GSMF-HM3-18 application, or VTVS36GSMF-HM3-18 equivalent, this device delivers precise clamping at 61 V (VC) with 342 pF capacitance at 0 V, AEC-Q101 qualification, and halogen-free construction - critical for robust front-end protection in CAN, LIN, and sensor signal conditioning circuits.

Technical Context

This TVS diode operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its 42.19–43.92 V breakdown range (VBR) at 1 mA test current. Its low thermal resistance (20 K/W junction-to-lead) enables reliable 400 W peak pulse power dissipation under standardized 10/1000 μs transients.

It achieves ±30 kV ESD immunity per IEC 61000-4-2 (contact and air discharge), with fast response time enabled by "Low-Noise" silicon technology. The SMF package supports wave and reflow soldering, complies with MSL level 1, and matches SOD-123W/SOD-123F footprints.

Key Specifications

Parameter Value and Actual Design Meaning
Peak Pulse Power 400 W - sustains high-energy transients without failure under 10/1000 μs waveform
Stand-off Voltage (VRWM) 36.0 V - maximum continuous reverse working voltage before significant leakage
Breakdown Voltage (VBR) 42.19–43.92 V at IT = 1 mA - tight ±2 % tolerance ensures predictable clamping onset
Clamping Voltage (VC) 61 V at IPPM = 6.43 A - limits downstream voltage during surge to protect 36 V-rated ICs
Capacitance (CD) 342 pF at VR = 0 V, f = 1 MHz - low enough for <1 Mbps CAN/LIN bus integrity
ESD Rating ±30 kV contact / ±30 kV air discharge - exceeds IEC 61000-4-2 Level 4 immunity requirements
Junction Temperature Range −55 °C to +175 °C - supports under-hood automotive and industrial ambient conditions

Pinout & Package

SMF (DO-219AB) package: low-profile, surface-mount, halogen-free molding compound; dimensions 3.9 mm × 1.9 mm × 1.08 mm; cathode marked by bar on top surface.

Pin/Terminal Circuit Role Design Meaning
Anode Current entry during forward conduction Connected to protected line's ground reference or low-side return path
Cathode Current exit during reverse clamping Connected to protected line (e.g., CAN_H, 36 V supply rail); clamps to anode when overvoltage occurs

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD stress
±2 % VBR tolerance Enables tighter system-level voltage margin control vs. ±5 % variants (e.g., VTVS36ASMF)
Low-profile SMF package 1.08 mm height allows placement in space-constrained modules (e.g., ECU edge connectors)
Halogen-free & RoHS-compliant Meets automotive material compliance standards (JESD201 class 2 whisker testing)
Wave/reflow solderable Compatible with standard PCB assembly processes up to 260 °C peak temperature

Applications

Automotive CAN Bus Protection Industrial 36 V Sensor Interface

Use Scenario: Protecting CAN_H/CAN_L lines in body control modules against load dump and ESD events.

IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between CAN_H and ground, absorbing transients before they reach transceiver inputs.

Use Value: 342 pF capacitance avoids signal distortion at 500 kbps CAN data rates; 61 V clamping prevents damage to ISO 11898-2 compliant transceivers.

Use Scenario: Safeguarding analog outputs (e.g., 4–20 mA loop drivers) powered from 36 V supplies in factory automation PLCs.

IC Role / Device Role / Timing Role: Standoff-rated TVS connected across 36 V rail and ground to suppress switching noise and lightning-induced surges.

Use Value: 36.0 V VRWM aligns precisely with nominal 36 V system voltage; 400 W rating handles repetitive 10/1000 μs surges common in motor drive environments.

Automotive LIN Bus Node Onboard Charger DC Link Monitoring

Use Scenario: ESD protection for LIN transceivers in door modules and seat controllers exposed to human touch.

IC Role / Device Role / Timing Role: Cathode tied to LIN bus, anode to chassis ground - clamps ±30 kV ESD strikes per IEC 61000-4-2.

Use Value: AEC-Q101 qualification ensures operation across −40 °C to +125 °C junction range; low leakage (<0.05 μA) preserves LIN bus bias stability.

Use Scenario: Overvoltage suppression on voltage-sense inputs monitoring 36 V battery packs in EV onboard chargers.

IC Role / Device Role / Timing Role: High-precision clamping element protecting ADC front-end from transient coupling during MOSFET switching.

Use Value: ±2 % VBR tolerance guarantees repeatable 42.19–43.92 V trigger point, enabling accurate fault detection window design around 36 V nominal.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
VTVS36ASMF-HM3-18 ±5 % VBR tolerance (40.9–45.2 V) vs. ±2 % for VTVS36GSMF-HM3-18 Less precise clamping onset; suitable where wider voltage margin is acceptable Select when cost sensitivity outweighs need for tight VBR control in safety-critical sensing paths
SMAJ36A-E3/5AT Same VRWM (36 V), but 400 W rating with ±5 % VBR and SMA package (DO-214AC) Larger footprint (4.5 mm × 2.7 mm) and higher thermal resistance (35 K/W) Choose only if legacy SMA layout exists; VTVS36GSMF-HM3-18 offers superior thermal performance and space savings

Compared with VTVS36ASMF-HM3-18 and SMAJ36A-E3/5AT, VTVS36GSMF-HM3-18 provides tighter voltage tolerance, lower profile, and better thermal dissipation - making it optimal for new automotive designs requiring AEC-Q101 compliance and compact board area.

Availability

VTVS36GSMF-HM3-18 is available at Aetrix Electronics and suitable for automotive ECUs, industrial PLC I/O modules, and battery management systems requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for VTVS36GSMF-HM3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.

The TransZorb® TVS family - including VTVS36GSMF-HM3-18 - is engineered specifically for robust ESD and surge protection in harsh environments, with emphasis on AEC-Q101 qualification and precision parametric control.

FAQ

What is the clamping voltage of the VTVS36GSMF-HM3-18 under peak pulse conditions?

The VTVS36GSMF-HM3-18 has a maximum reverse clamping voltage (VC) of 61 V at its rated peak pulse current of 6.43 A (10/1000 μs waveform). This value is measured per standard test conditions and defines the upper voltage limit imposed on protected circuitry during surge events. The VTVS36GSMF-HM3-18 maintains this clamping performance across its full operating temperature range.

Is the VTVS36GSMF-HM3-18 qualified for automotive applications?

Yes, the VTVS36GSMF-HM3-18 is AEC-Q101 qualified, meaning it has passed rigorous stress tests including high-temperature reverse bias, temperature cycling, and ESD robustness required for automotive electronic control units. Its −55 °C to +175 °C junction temperature range and halogen-free construction further support under-hood deployment. The VTVS36GSMF-HM3-18 meets these requirements as documented in Vishay's official qualification report.

How does the ±2 % breakdown voltage tolerance of VTVS36GSMF-HM3-18 compare to standard ±5 % TVS diodes?

The ±2 % VBR tolerance of VTVS36GSMF-HM3-18 (42.19–43.92 V) provides significantly tighter control over clamping onset versus ±5 % variants like VTVS36ASMF-HM3-18 (40.9–45.2 V). This reduces design uncertainty in voltage-margin-critical applications such as ADC input protection or regulated 36 V rail supervision. The VTVS36GSMF-HM3-18 achieves this via enhanced process control during silicon fabrication.

What is the package type and mounting compatibility of VTVS36GSMF-HM3-18?

The VTVS36GSMF-HM3-18 uses the SMF (DO-219AB) package - a low-profile surface-mount outline measuring 3.9 mm × 1.9 mm × 1.08 mm. It is compatible with standard wave and reflow soldering processes (peak temp ≤ 260 °C) and matches the footprint of SOD-123W, SOD-123F, and SOD-123FL packages. The VTVS36GSMF-HM3-18 features a cathode bar marking and MSL level 1 moisture sensitivity rating.

Does the VTVS36GSMF-HM3-18 meet IEC 61000-4-2 ESD immunity requirements?

Yes, the VTVS36GSMF-HM3-18 is rated for ±30 kV contact discharge and ±30 kV air discharge per IEC 61000-4-2, exceeding Level 4 (the highest severity class). This performance is achieved through optimized junction design and "Low-Noise" silicon technology enabling sub-nanosecond response. The VTVS36GSMF-HM3-18 delivers this ESD protection while maintaining low leakage (<0.05 μA at VRWM) and stable clamping behavior.

VTVS36GSMF-HM3-18 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-219AB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
36V
Voltage - Breakdown (Min):
42.19V
Voltage - Clamping (Max) @ Ipp:
61V
Current - Peak Pulse (10/1000µs):
6.43A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
342pF @ 1MHz
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-219AB (SMF)

VTVS36GSMF-HM3-18 FAQ

1.How can I place an order for VTVS36GSMF-HM3-18 through Aetrix?

Please submit a Request for Quotation (RFQ) for VTVS36GSMF-HM3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for VTVS36GSMF-HM3-18 reliable?

The price and inventory of VTVS36GSMF-HM3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS36GSMF-HM3-18 is usually 5 days.

3.What payment methods are accepted for VTVS36GSMF-HM3-18?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS36GSMF-HM3-18 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for VTVS36GSMF-HM3-18?

VTVS36GSMF-HM3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your VTVS36GSMF-HM3-18 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for VTVS36GSMF-HM3-18?

For technical support, including VTVS36GSMF-HM3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS36GSMF-HM3-18 requirements.

6.How does Aetrix verify that VTVS36GSMF-HM3-18 is sourced from the original manufacturer or authorized distributors?

All VTVS36GSMF-HM3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS36GSMF-HM3-18 meets industry standards.

7.What is the process for return or replacement of VTVS36GSMF-HM3-18?

All VTVS36GSMF-HM3-18 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS36GSMF-HM3-18, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The VTVS36GSMF-HM3-18 part is unused and in its original packaging.

Return procedure for VTVS36GSMF-HM3-18:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

VTVS36GSMF-HM3-18 Tags

  • VTVS36GSMF-HM3-18
  • VTVS36GSMF-HM3-18 PDF
  • VTVS36GSMF-HM3-18 Datasheet
  • VTVS36GSMF-HM3-18 Specifications
  • VTVS36GSMF-HM3-18 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division VTVS36GSMF-HM3-18
  • Buy VTVS36GSMF-HM3-18
  • VTVS36GSMF-HM3-18 Price
  • VTVS36GSMF-HM3-18 Distributor
  • VTVS36GSMF-HM3-18 Supplier
  • VTVS36GSMF-HM3-18 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER