Vishay General Semiconductor - Diodes Division VTVS43GSMF-HM3-08
- Part No.:
- VTVS43GSMF-HM3-08
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
VTVS43GSMF-HM3-08.pdf
- Description:
- TVS DIODE 43.2VWM 73VC DO219AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
VTVS43GSMF-HM3-08 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for ESD and surge protection of low-voltage DC lines. It features 43.2 V stand-off voltage (VRWM), ±2 % tolerance on avalanche breakdown voltage (VBR = 50.03–52.08 V at IT = 1 mA), 73 A peak pulse current (IPPM, 10/1000 μs), 73 V maximum clamping voltage (VC), and 292 pF typical junction capacitance at 0 V - deployed in automotive infotainment power rails and USB-C port protection.
For engineers reviewing the VTVS43GSMF-HM3-08 datasheet, VTVS43GSMF-HM3-08 pinout, VTVS43GSMF-HM3-08 application, or VTVS43GSMF-HM3-08 equivalent, key selection criteria include its ±2 % VBR tolerance, AEC-Q101 qualification status, halogen-free SMF package compatibility with SOD-123W footprint, and IEC 61000-4-2 ±30 kV contact/air discharge rating.
Technical Context
This TVS diode operates as a unidirectional clamping device, triggered when reverse voltage exceeds its 50.03–52.08 V breakdown range. Its low 20 K/W thermal resistance (RthJL) enables effective heat dissipation under 400 W peak pulse stress (10/1000 μs waveform), while maintaining stable operation across -55 °C to +175 °C junction temperature range.
The device delivers fast response via "Low-Noise" technology, achieving sub-nanosecond turn-on for transient suppression. Its 292 pF capacitance at 0 V and 1.08 mm height support high-speed signal line integration without compromising signal integrity in compact automotive and industrial PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power | 400 W (10/1000 μs waveform; sustains repeated surges without degradation) |
| Stand-off Voltage (VRWM) | 43.2 V (maximum continuous reverse working voltage before clamping initiates) |
| Avalanche Breakdown (VBR) | 50.03–52.08 V at IT = 1 mA (±2 % tolerance ensures precise trigger threshold for system-level overvoltage margining) |
| Clamping Voltage (VC) | 73 V at IPPM = 73 A (limits downstream IC voltage during surge, protecting 48 V-rated components) |
| Junction Capacitance | 292 pF at VR = 0 V, f = 1 MHz (low enough for USB 2.0 data lines; verified per typical characteristics curves) |
| ESD Rating | ±30 kV contact / ±30 kV air (IEC 61000-4-2 compliance eliminates need for external ESD staging in end-equipment certification) |
| Operating Temperature | -55 °C to +175 °C (enables use in under-hood automotive modules and industrial motor drives) |
Pinout & Package
Package: SMF (DO-219AB), halogen-free molding compound, 3.9 mm × 1.9 mm × 1.08 mm, compatible with SOD-123W footprint and reflow/wave soldering (peak temp ≤ 260 °C). Cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; defines clamping reference point for unidirectional operation |
| Cathode | Protected line input | Connected to line under protection (e.g., USB VBUS); conducts surge current to anode during overvoltage event |
Key Features
| Feature | Design Value |
|---|---|
| ±2 % VBR tolerance | Enables tighter system-level overvoltage design margins vs. ±5 % variants, reducing risk of false triggering or late clamping |
| AEC-Q101 qualified | Validated for automotive-grade reliability including HTOL, temperature cycling, and mechanical shock per JESD22 standards |
| Halogen-free & RoHS-compliant | Meets automotive OEM material compliance requirements (e.g., GMW3172, Ford WSS-M99P9999-A1) without lead or brominated flame retardants |
| Low-profile SMF package | 1.08 mm height allows placement beneath connectors or in tight board-to-board spacing common in ADAS camera modules |
| IEC 61000-4-2 ±30 kV | Eliminates need for secondary ESD protection stages in final product design, simplifying BOM and layout |
Applications
| Automotive Infotainment Power Rail | USB-C Port Protection |
|---|---|
|
Use Scenario: Protecting 48 V supply lines feeding head unit processors and display drivers against load dump and ISO 7637-2 transients. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between power input and DC-DC converter input stage. Use Value: Clamps 73 V at 73 A, limiting stress on downstream 65 V-rated buck controllers and preserving system uptime during battery disconnection events. |
Use Scenario: Safeguarding USB-C VBUS pins against hot-plug surges and ESD during mating/unmating in vehicle docking stations. IC Role / Device Role / Timing Role: Primary ESD/surge suppressor mounted directly at connector footprint, ahead of USB PD controller. Use Value: 292 pF capacitance avoids signal integrity loss on 480 Mbps USB 2.0 lines; ±30 kV ESD rating meets USB-IF compliance test requirements. |
| Industrial Sensor Interface | Telematics LTE Antenna Bias Line |
|
Use Scenario: Shielding 24 V analog sensor inputs (e.g., pressure, temperature) from induced lightning surges in factory automation cabinets. IC Role / Device Role / Timing Role: Standoff-clamp TVS installed at PCB edge connector, shunting transients to chassis ground. Use Value: 43.2 V VRWM matches common 24 V industrial bus levels; 175 °C max junction temperature supports operation near motor drives. |
Use Scenario: Protecting DC bias feed to active LTE antennas in telematics control units exposed to automotive EMI and electrostatic discharge. IC Role / Device Role / Timing Role: Series-connected unidirectional TVS on antenna bias line, blocking reverse surge while passing forward DC. Use Value: Low 20 K/W RthJL prevents thermal runaway during repeated RF-induced transients; halogen-free construction satisfies Tier-1 automotive material specs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ43A-E3/5AT | ±5 % VBR tolerance (45.2–49.8 V), SMA package (DO-214AC), 1.5 mm height | Larger footprint and lower thermal performance (RthJL = 35 K/W); not AEC-Q101 qualified | Select when cost sensitivity outweighs automotive qualification and precision clamping needs |
| TPSMD43C | ±5 % VBR (45.2–49.8 V), same SMF package, but only IEC 61000-4-2 ±20 kV rated | Lower ESD immunity limits suitability for USB-C or infotainment interfaces requiring ±30 kV compliance | Choose for non-automotive industrial applications where ±20 kV ESD suffices and AEC-Q101 is unnecessary |
Compared with SMAJ43A-E3/5AT and TPSMD43C, VTVS43GSMF-HM3-08 provides tighter ±2 % VBR tolerance, AEC-Q101 qualification, and full ±30 kV IEC 61000-4-2 rating - making it the preferred choice for automotive and high-reliability USB-C designs where clamping precision and regulatory compliance are critical.
Availability
VTVS43GSMF-HM3-08 is available at Aetrix Electronics and suitable for automotive infotainment systems, USB-C interface protection, industrial sensor signal conditioning, and telematics antenna bias line applications requiring stable component supply across extended production lifecycles.
Supply support for VTVS43GSMF-HM3-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The VTVS eSMP® Series targets high-density transient protection in space-constrained environments, with emphasis on AEC-Q101 qualification, low-profile packaging, and precise clamping for next-generation automotive electronics.
FAQ
What is the clamping voltage of the VTVS43GSMF-HM3-08 at its rated peak pulse current?
The VTVS43GSMF-HM3-08 has a maximum reverse clamping voltage (VC) of 73 V at its rated peak pulse current (IPPM) of 73 A, measured using a 10/1000 μs waveform. This value ensures protected circuits remain below critical voltage thresholds during surge events. The VTVS43GSMF-HM3-08 achieves this clamping performance while maintaining low leakage and stable operation from -55 °C to +175 °C.
Is the VTVS43GSMF-HM3-08 qualified for automotive applications?
Yes, the VTVS43GSMF-HM3-08 is AEC-Q101 qualified, having passed stress tests including high-temperature operating life, temperature cycling, and mechanical shock per JESD22 standards. This qualification confirms its suitability for under-hood and cabin-mounted automotive electronics. The VTVS43GSMF-HM3-08 also complies with halogen-free and RoHS requirements mandated by major automotive OEMs.
What is the junction capacitance of the VTVS43GSMF-HM3-08, and how does it affect high-speed signal lines?
The VTVS43GSMF-HM3-08 exhibits 292 pF typical junction capacitance at 0 V and 1 MHz, as confirmed in the Vishay datasheet's Typical Characteristics section. This value is low enough to avoid signal degradation on USB 2.0 (480 Mbps) lines when placed at the connector, provided layout parasitics are minimized. The VTVS43GSMF-HM3-08's capacitance remains stable across bias voltage, supporting consistent performance in dynamic bias scenarios.
How does the ±2 % VBR tolerance of the VTVS43GSMF-HM3-08 improve system-level design margins?
The ±2 % VBR tolerance (50.03–52.08 V) of the VTVS43GSMF-HM3-08 enables tighter coordination with downstream IC absolute maximum ratings - for example, ensuring clamping occurs well before exceeding the 65 V limit of many 48 V DC-DC controllers. This reduces design guard-banding, improves surge survivability, and avoids false triggering during normal line transients. The VTVS43GSMF-HM3-08 thus enhances robustness in safety-critical automotive subsystems.
Can the VTVS43GSMF-HM3-08 be used in reflow soldering processes?
Yes, the VTVS43GSMF-HM3-08 is fully compatible with standard reflow soldering processes, with a maximum peak temperature rating of 260 °C per J-STD-020 MSL Level 1 guidelines. Its SMF (DO-219AB) package uses halogen-free molding compound and tin-plated terminations, supporting lead-free assembly. The VTVS43GSMF-HM3-08's thermal resistance (RthJL = 20 K/W) also facilitates efficient heat extraction during reflow and operational conditions.
VTVS43GSMF-HM3-08 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43.2V
- Voltage - Breakdown (Min):
- 50.03V
- Voltage - Clamping (Max) @ Ipp:
- 73V
- Current - Peak Pulse (10/1000µs):
- 5.39A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 292pF @ 1MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
VTVS43GSMF-HM3-08 FAQ
1.How can I place an order for VTVS43GSMF-HM3-08 through Aetrix?
Please submit a Request for Quotation (RFQ) for VTVS43GSMF-HM3-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VTVS43GSMF-HM3-08 reliable?
The price and inventory of VTVS43GSMF-HM3-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS43GSMF-HM3-08 is usually 5 days.
3.What payment methods are accepted for VTVS43GSMF-HM3-08?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS43GSMF-HM3-08 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VTVS43GSMF-HM3-08?
VTVS43GSMF-HM3-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VTVS43GSMF-HM3-08 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VTVS43GSMF-HM3-08?
For technical support, including VTVS43GSMF-HM3-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS43GSMF-HM3-08 requirements.
6.How does Aetrix verify that VTVS43GSMF-HM3-08 is sourced from the original manufacturer or authorized distributors?
All VTVS43GSMF-HM3-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS43GSMF-HM3-08 meets industry standards.
7.What is the process for return or replacement of VTVS43GSMF-HM3-08?
All VTVS43GSMF-HM3-08 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS43GSMF-HM3-08, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VTVS43GSMF-HM3-08 part is unused and in its original packaging.
Return procedure for VTVS43GSMF-HM3-08:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VTVS43GSMF-HM3-08 Tags

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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