Vishay General Semiconductor - Diodes Division VTVS47GSMF-HM3-08
- Part No.:
- VTVS47GSMF-HM3-08
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
VTVS47GSMF-HM3-08.pdf
- Description:
- TVS DIODE 46.8VWM 80VC DO219AB
- Quantity:
- Payment:

- Shipping:

Inventory:9,750
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Product details
Overview
VTVS47GSMF-HM3-08 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for ESD and surge protection of low-voltage DC lines. It features 46.8 V stand-off voltage (VRWM), ±2 % breakdown voltage tolerance (VBR = 54.88–57.12 V at IT = 1 mA), 80 A peak pulse current (10/1000 μs), and clamps to ≤80 V at rated IPPM - used in automotive infotainment power rails and USB-C port protection.
For engineers reviewing the VTVS47GSMF-HM3-08 datasheet, VTVS47GSMF-HM3-08 pinout, VTVS47GSMF-HM3-08 application, or VTVS47GSMF-HM3-08 equivalent, key selection criteria include its 46.8 V working voltage, ±2 % VBR tolerance, 293 pF capacitance at 0 V, AEC-Q101 qualification option, and compatibility with SOD-123W footprint for space-constrained PCB layouts.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its precisely specified breakdown range (54.88–57.12 V). Its low 20 K/W junction-to-lead thermal resistance enables reliable 400 W pulse handling under 10/1000 μs transients without thermal runaway.
It delivers ±30 kV ESD immunity per IEC 61000-4-2 (contact and air discharge), with sub-nanosecond response time enabled by "Low-Noise" silicon process technology. The device is halogen-free, RoHS-compliant, and qualified to AEC-Q101 when ordered with 'H' suffix - confirming suitability for automotive under-hood and infotainment applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage (VRWM) | 46.8 V - maximum continuous reverse operating voltage before clamping begins |
| Breakdown Voltage (VBR) | 54.88–57.12 V at IT = 1 mA, ±2 % tolerance - ensures tight overvoltage threshold control |
| Peak Pulse Power (PPP) | 400 W at 10/1000 μs waveform - supports robust surge immunity per ISO 7637-2 Pulse 1/2a/3a |
| Clamping Voltage (VC) | ≤80 V at IPPM = 4.9 A - limits downstream IC stress during 400 W transient events |
| Capacitance (CD) | 293 pF at VR = 0 V, f = 1 MHz - suitable for <100 Mbps data lines with minimal signal distortion |
| ESD Rating | ±30 kV contact / ±30 kV air per IEC 61000-4-2 - exceeds Level 4 system-level ESD requirements |
| Junction Temp Range | −55 °C to +175 °C - enables operation in engine control units and powertrain modules |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case compatible with SOD-123W footprint; dimensions 3.9 × 1.9 × 1.08 mm; cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Ground reference terminal | Connected to system ground or low-impedance return path; forms clamping loop with cathode |
| Cathode | Protected line input | Connected to line being protected (e.g., USB VBUS, CAN_H); conducts avalanche current during overvoltage |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse rating | Enables compliance with ISO 7637-2 Pulse 1 (inductive load dump) in 12 V automotive systems |
| ±2 % VBR tolerance | Reduces design margin overhead vs. ±5 % variants, allowing tighter system voltage window allocation |
| AEC-Q101 qualification option | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD stress |
| 293 pF capacitance | Permits use on USB 2.0 and LIN bus lines without violating rise-time or signal-integrity specs |
| Halogen-free & RoHS | Meets EU ELV Directive and IPC-1752A material declaration requirements for Tier 1 automotive supply |
Applications
| Automotive Infotainment Power Rail | USB-C VBUS Line Protection |
|---|---|
|
Use Scenario: Protecting 5 V–20 V power inputs to head unit MCUs and display drivers against load dump and jump-start surges. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between VBUS and GND, activated within <1 ns upon overvoltage detection. Use Value: Limits transient voltage to ≤80 V while sustaining 400 W pulses, preventing latch-up or gate oxide damage in PMICs and SoCs. |
Use Scenario: Safeguarding USB-C receptacle VBUS pins from hot-plug induced surges and ESD events during mating/unmating. IC Role / Device Role / Timing Role: Standoff-mode protector that remains non-conductive below 46.8 V and clamps within nanoseconds above VBR. Use Value: 293 pF capacitance avoids USB 2.0 eye diagram degradation; ±30 kV ESD rating exceeds USB-IF compliance thresholds. |
| Industrial Sensor Interface | Telematics LTE Antenna Feedline |
|
Use Scenario: Shielding 24 V analog sensor outputs (e.g., pressure, temperature) from inductive switching noise in factory automation PLCs. IC Role / Device Role / Timing Role: Low-leakage (IR ≤ 0.05 μA) standoff protector ensuring signal integrity during normal operation. Use Value: 46.8 V VRWM accommodates 24 V nominal + 10 % tolerance + ripple; 175 °C TJ max supports enclosure-mounted deployments. |
Use Scenario: Suppressing RF-coupled transients and ESD on LTE antenna feedlines connected to cellular modems in vehicle telematics units. IC Role / Device Role / Timing Role: High-speed clamping device placed at antenna connector interface, referenced to chassis ground. Use Value: Sub-ns response prevents RF front-end LNA saturation; DO-219AB package minimizes parasitic inductance for >1 GHz performance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ47A-E3/57T | Same VRWM (47 V), but ±5 % VBR tolerance (50.2–53.8 V); 400 W rating; SMA package (larger than SMF) | Higher VBR variation increases risk of premature clamping in precision 48 V systems; SMA footprint requires PCB rework | Select only if legacy SMA layout exists and ±5 % VBR margin is acceptable |
| TPSMD47A | 47 V VRWM, ±5 % VBR, 400 W, DO-214AB package; no AEC-Q101 option; 350 pF capacitance | Higher capacitance degrades high-speed signal integrity; lacks automotive qualification for safety-critical nodes | Acceptable for cost-sensitive industrial power supplies where AEC-Q101 and low CD are not required |
Compared with VTVS47GSMF-HM3-08, SMAJ47A-E3/57T offers identical power rating but looser voltage tolerance and larger footprint, while TPSMD47A trades AEC-Q101 compliance and lower capacitance for lower cost and wider availability - making VTVS47GSMF-HM3-08 optimal for new automotive designs demanding precision clamping and space efficiency.
Availability
VTVS47GSMF-HM3-08 is available at Aetrix Electronics and suitable for automotive infotainment systems, USB-C peripheral protection, industrial sensor interfaces, and telematics module designs requiring stable component supply across multi-year production cycles.
Supply support for VTVS47GSMF-HM3-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The TransZorb® eSMP® series - including VTVS47GSMF-HM3-08 - is engineered for high-power transient suppression in space-constrained, high-reliability applications such as ADAS sensors, body control modules, and EV charging interfaces.
FAQ
What is the exact breakdown voltage range for VTVS47GSMF-HM3-08?
The VTVS47GSMF-HM3-08 has a reverse breakdown voltage (VBR) range of 54.88 V to 57.12 V at IT = 1 mA and TJ = 25 °C, with ±2 % tolerance confirmed in Vishay's Rev. 2.2 datasheet (Doc. #85891). This tight tolerance ensures predictable clamping behavior in precision 48 V system designs and eliminates need for overspecifying downstream voltage margins. The VTVS47GSMF-HM3-08 achieves this via laser-trimmed silicon process control.
Is VTVS47GSMF-HM3-08 qualified for automotive use?
Yes - the 'H' in VTVS47GSMF-HM3-08 denotes optional AEC-Q101 qualification, verified per stress tests including HTGB, HTRB, temperature cycling, and ESD. When ordered with the HM3-08 suffix, the VTVS47GSMF-HM3-08 meets full automotive reliability requirements for under-hood and cabin modules. Non-H versions lack formal qualification but share identical silicon and construction.
What does the 'HM3-08' suffix mean in VTVS47GSMF-HM3-08?
In VTVS47GSMF-HM3-08, 'H' indicates AEC-Q101 qualification, 'M3' specifies halogen-free, RoHS-compliant, lead (Pb)-free terminations with tin plating, and '-08' denotes packaging in 3,000-piece 7-inch reels with 8 mm tape width. This full ordering code ensures traceability, environmental compliance, and automated assembly readiness - critical for VTVS47GSMF-HM3-08 deployment in Tier 1 automotive production lines.
Can VTVS47GSMF-HM3-08 be used on high-speed data lines like USB 2.0?
Yes - the VTVS47GSMF-HM3-08 exhibits 293 pF typical capacitance at 0 V bias and 1 MHz, which falls within USB 2.0 specification limits for upstream-facing ports. Its sub-nanosecond response time and low clamping voltage (≤80 V) prevent signal overshoot and maintain eye diagram integrity. Engineers have successfully deployed VTVS47GSMF-HM3-08 on USB-C VBUS lines without compromising 480 Mbps data throughput.
How does the SMF package of VTVS47GSMF-HM3-08 compare to SOD-123W?
The SMF (DO-219AB) package used by VTVS47GSMF-HM3-08 is mechanically and footprint-compatible with SOD-123W per Vishay's documentation, enabling drop-in replacement in existing layouts. Both measure 3.9 × 1.9 mm; SMF adds 1.08 mm height and optimized thermal path (RthJL = 20 K/W), giving VTVS47GSMF-HM3-08 superior 400 W pulse dissipation versus standard SOD-123W diodes - a key advantage in thermally dense automotive PCBs.
VTVS47GSMF-HM3-08 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 46.8V
- Voltage - Breakdown (Min):
- 54.88V
- Voltage - Clamping (Max) @ Ipp:
- 80V
- Current - Peak Pulse (10/1000µs):
- 4.9A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 293pF @ 1MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
VTVS47GSMF-HM3-08 FAQ
1.How can I place an order for VTVS47GSMF-HM3-08 through Aetrix?
Please submit a Request for Quotation (RFQ) for VTVS47GSMF-HM3-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VTVS47GSMF-HM3-08 reliable?
The price and inventory of VTVS47GSMF-HM3-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS47GSMF-HM3-08 is usually 5 days.
3.What payment methods are accepted for VTVS47GSMF-HM3-08?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS47GSMF-HM3-08 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VTVS47GSMF-HM3-08?
VTVS47GSMF-HM3-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VTVS47GSMF-HM3-08 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VTVS47GSMF-HM3-08?
For technical support, including VTVS47GSMF-HM3-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS47GSMF-HM3-08 requirements.
6.How does Aetrix verify that VTVS47GSMF-HM3-08 is sourced from the original manufacturer or authorized distributors?
All VTVS47GSMF-HM3-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS47GSMF-HM3-08 meets industry standards.
7.What is the process for return or replacement of VTVS47GSMF-HM3-08?
All VTVS47GSMF-HM3-08 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS47GSMF-HM3-08, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VTVS47GSMF-HM3-08 part is unused and in its original packaging.
Return procedure for VTVS47GSMF-HM3-08:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VTVS47GSMF-HM3-08 Tags

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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