Vishay General Semiconductor - Diodes Division VTVS52GSMF-HM3-18
- Part No.:
- VTVS52GSMF-HM3-18
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
VTVS52GSMF-HM3-18.pdf
- Description:
- TVS DIODE 52.2VWM 89VC DO219AB
- Quantity:
- Payment:

- Shipping:

Inventory:4,695
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VTVS52GSMF-HM3-18 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for ESD and surge protection of 52.2 V DC power rails and signal lines. It features 60.76–63.24 V reverse breakdown voltage (VBR), ±2 % tolerance, 89 A peak pulse current (IPPM), 89 V maximum clamping voltage (VC) at IPPM, and 242 pF typical junction capacitance - deployed in automotive infotainment power inputs and industrial sensor interfaces.
For engineers reviewing the VTVS52GSMF-HM3-18 datasheet, VTVS52GSMF-HM3-18 pinout, VTVS52GSMF-HM3-18 application, or VTVS52GSMF-HM3-18 equivalent, key selection criteria include its AEC-Q101 qualification, halogen-free SOD-123W-compatible SMF package, ±30 kV IEC 61000-4-2 ESD immunity, low thermal resistance (20 K/W), and precise 2 % VBR tolerance for tight-clamp system designs.
Technical Context
This device operates as a unidirectional avalanche diode with fast response time enabled by Vishay's "Low-Noise" technology. Its clamping behavior is defined under 10/1000 μs waveform conditions, delivering 89 V clamping at 89 A while maintaining 52.2 V stand-off voltage (VRWM) and only 0.05 μA leakage at rated VRWM.
The SMF (DO-219AB) package supports wave and reflow soldering per J-STD-020 MSL level 1, with peak temperature up to 260 °C. Junction temperature range spans −55 °C to +175 °C, enabling use in under-hood automotive and high-temperature industrial environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 52.2 V - Maximum continuous reverse working voltage before significant leakage; sets upper limit for protected circuit DC bias. |
| VBR @ IT = 1 mA | 60.76–63.24 V - Tight ±2 % tolerance ensures predictable turn-on across production lots and temperature. |
| VC @ IPPM | 89 V - Clamping voltage during 10/1000 μs surge; limits transient energy delivered to downstream ICs. |
| IPPM | 89 A - Peak pulse current handling capacity under standardized surge waveform; defines robustness against ISO 7637-2 Pulse 1/2a/5a events. |
| CD @ VR = 0 V, f = 1 MHz | 242 pF - Junction capacitance impacts high-speed signal integrity; suitable for <10 Mbps data lines or DC power rails. |
| ESD Rating | ±30 kV contact / ±30 kV air (IEC 61000-4-2) - Full-system ESD immunity without external shielding or filtering. |
| TJ max. | +175 °C - Enables placement near heat sources (e.g., power converters) without derating in automotive modules. |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case compatible with SOD-123W footprint; dimensions: 3.9 mm × 1.9 mm × 1.08 mm (L × W × H); cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry during forward conduction; tied to protected line ground or low-side return path | Provides low-impedance discharge path to ground when transient exceeds VBR; must connect to lowest-impedance ground plane. |
| Cathode | Current exit during reverse-biased clamping; connected to protected line (e.g., 52.2 V rail) | Acts as the "protected node" terminal; clamps voltage to ≤89 V relative to anode during surge events. |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power (10/1000 μs) | Supports high-energy transients common in 12 V/24 V automotive systems without thermal runaway. |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, mechanical shock, and humidity testing. |
| Halogen-free & RoHS-compliant | Meets automotive OEM material compliance requirements (e.g., GMW3172, Ford WSS-M99P9999-A1). |
| MSL level 1 (J-STD-020) | Unlimited floor life at ≤30 °C/60 % RH; no baking required prior to reflow assembly. |
| ±2 % VBR tolerance | Enables tighter margin design between VRWM and VBR, reducing risk of false triggering in noisy environments. |
Applications
| Automotive Infotainment Power Input | Industrial CAN Bus Node Protection |
|---|---|
Use Scenario: Protecting 52 V supply rail of head unit MCU and display driver ICs from load dump and jump-start surges. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed directly at connector entry point, clamping transients before they reach LDOs and PMICs. Use Value: Withstands 89 A pulses and maintains 89 V clamping, preventing overvoltage damage to 65 V-rated input stages while adding only 242 pF loading. |
Use Scenario: Safeguarding CAN transceiver VCC pins in factory automation gateways exposed to inductive switching noise. IC Role / Device Role / Timing Role: Standoff protector on 5 V or 3.3 V auxiliary supply feeding isolated CAN PHY; co-located with ferrite bead for combined ESD/surge/noise suppression. Use Value: ±30 kV IEC 61000-4-2 rating eliminates need for secondary ESD components; 20 K/W RthJL enables thermal stability during repeated 10/1000 μs events. |
| Telecom Remote Radio Unit (RRU) DC Feed | Medical Imaging Sensor Bias Supply |
Use Scenario: Securing 48–56 V DC power feed to outdoor 5G RRUs subject to lightning-induced surges on long cable runs. IC Role / Device Role / Timing Role: Primary surge clamp on PoE++-derived DC input, upstream of DC/DC converter and GaN amplifier bias circuits. Use Value: 400 W peak power rating handles multi-kA induced currents; DO-219AB package allows compact layout with minimal trace inductance for optimal clamping speed. |
Use Scenario: Protecting high-precision analog bias supplies (e.g., for X-ray detector ASICs) where leakage and capacitance must be tightly controlled. IC Role / Device Role / Timing Role: Low-leakage (0.05 μA @ 52.2 V) TVS on ultra-stable 52.2 V reference rail, minimizing DC error contribution. Use Value: Sub-μA leakage preserves mV-level accuracy; 242 pF capacitance avoids resonance with low-ESR ceramic filters used in medical-grade LDO outputs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ52A-E3/5A (Vishay) | Same VRWM (52 V), but ±5 % VBR tolerance (61.2–67.2 V), higher VC (93.6 V), SMA package (larger footprint) | Less precise clamping; requires PCB area increase (~2.5× SMF footprint); not AEC-Q101 qualified | Select when cost sensitivity outweighs precision and space constraints; verify thermal margin due to higher RthJA. |
| TPSMD52A (Texas Instruments) | Same VRWM (52 V), ±5 % VBR, 93.6 V VC, DO-214AB package; no AEC-Q101 or IEC 61000-4-2 certification stated | Lacks automotive qualification and full ESD rating; lower surge robustness (400 W same, but no published IPPM curve validation) | Acceptable for commercial-grade industrial controls where AEC-Q101 and ±30 kV ESD are not mandated. |
Compared with SMAJ52A-E3/5A and TPSMD52A, VTVS52GSMF-HM3-18 delivers tighter ±2 % VBR control, lower clamping (89 V vs. 93.6 V), AEC-Q101 qualification, and verified ±30 kV ESD performance - making it the preferred choice for automotive and high-reliability industrial designs requiring predictable, repeatable surge response.
Availability
VTVS52GSMF-HM3-18 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial CAN networks, and telecom remote radio units requiring stable component supply, long-term lifecycle support, and consistent surge performance across production batches.
Supply support for VTVS52GSMF-HM3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The VTVS eSMP® Series targets high-density, high-surge applications demanding AEC-Q101 qualification, low-profile packaging, and precise clamping - specifically engineered for next-generation automotive ECUs and ruggedized industrial interfaces.
FAQ
What is the exact reverse breakdown voltage range for VTVS52GSMF-HM3-18?
The VTVS52GSMF-HM3-18 has a reverse breakdown voltage (VBR) of 60.76 V minimum to 63.24 V maximum at IT = 1 mA and TJ = 25 °C, reflecting its ±2 % tolerance grade. This tight specification ensures consistent clamping onset across temperature and production lots, critical for protecting 52.2 V rails in automotive modules where margin is constrained.
Is VTVS52GSMF-HM3-18 qualified for automotive use?
Yes, VTVS52GSMF-HM3-18 is AEC-Q101 qualified, having passed stress tests including temperature cycling, mechanical shock, and high-temperature operating life. This qualification confirms its suitability for under-hood and cabin applications such as infotainment power inputs and ADAS sensor interfaces where reliability under thermal and vibration stress is mandatory.
What does the "HM3-18" suffix indicate in VTVS52GSMF-HM3-18?
The "HM3-18" suffix denotes halogen-free (H), lead-free tin plating (M), 3 k per 7″ reel packaging (3), and tape-and-reel orientation code -18 (standard cathode-up orientation per SMF carrier tape spec). This matches Vishay's ordering convention in Document 85891 and ensures compatibility with automated SMT placement equipment calibrated for DO-219AB devices.
How does the clamping performance of VTVS52GSMF-HM3-18 compare to standard 52 V TVS diodes?
VTVS52GSMF-HM3-18 clamps to 89 V at 89 A (10/1000 μs), which is 4.6 V lower than typical ±5 % 52 V TVS diodes (e.g., SMAJ52A at 93.6 V). This 5 % reduction in clamping voltage directly improves system-level surge margin, especially for ICs with 90 V absolute maximum ratings - a key advantage in space-constrained automotive layouts.
Can VTVS52GSMF-HM3-18 be used in bidirectional configurations?
No, VTVS52GSMF-HM3-18 is a unidirectional TVS diode, intended for DC rail protection where polarity is fixed. For AC or bidirectional signal line protection (e.g., RS-485), a dedicated bidirectional variant like VTVS52GSMF-BD would be required - the "G" in VTVS52GSMF-HM3-18 refers only to ±2 % VBR tolerance, not polarity.
VTVS52GSMF-HM3-18 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 52.2V
- Voltage - Breakdown (Min):
- 60.76V
- Voltage - Clamping (Max) @ Ipp:
- 89V
- Current - Peak Pulse (10/1000µs):
- 4.41A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 242pF @ 1MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
VTVS52GSMF-HM3-18 FAQ
1.How can I place an order for VTVS52GSMF-HM3-18 through Aetrix?
Please submit a Request for Quotation (RFQ) for VTVS52GSMF-HM3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VTVS52GSMF-HM3-18 reliable?
The price and inventory of VTVS52GSMF-HM3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS52GSMF-HM3-18 is usually 5 days.
3.What payment methods are accepted for VTVS52GSMF-HM3-18?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS52GSMF-HM3-18 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VTVS52GSMF-HM3-18?
VTVS52GSMF-HM3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VTVS52GSMF-HM3-18 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VTVS52GSMF-HM3-18?
For technical support, including VTVS52GSMF-HM3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS52GSMF-HM3-18 requirements.
6.How does Aetrix verify that VTVS52GSMF-HM3-18 is sourced from the original manufacturer or authorized distributors?
All VTVS52GSMF-HM3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS52GSMF-HM3-18 meets industry standards.
7.What is the process for return or replacement of VTVS52GSMF-HM3-18?
All VTVS52GSMF-HM3-18 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS52GSMF-HM3-18, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VTVS52GSMF-HM3-18 part is unused and in its original packaging.
Return procedure for VTVS52GSMF-HM3-18:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VTVS52GSMF-HM3-18 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

