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Vishay General Semiconductor - Diodes Division VTVS52GSMF-HM3-18

Part No.:
VTVS52GSMF-HM3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-219AB
Datasheet:
AetrixVTVS52GSMF-HM3-18.pdf
Description:
TVS DIODE 52.2VWM 89VC DO219AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,695

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Product details

Overview

VTVS52GSMF-HM3-18 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for ESD and surge protection of 52.2 V DC power rails and signal lines. It features 60.76–63.24 V reverse breakdown voltage (VBR), ±2 % tolerance, 89 A peak pulse current (IPPM), 89 V maximum clamping voltage (VC) at IPPM, and 242 pF typical junction capacitance - deployed in automotive infotainment power inputs and industrial sensor interfaces.

For engineers reviewing the VTVS52GSMF-HM3-18 datasheet, VTVS52GSMF-HM3-18 pinout, VTVS52GSMF-HM3-18 application, or VTVS52GSMF-HM3-18 equivalent, key selection criteria include its AEC-Q101 qualification, halogen-free SOD-123W-compatible SMF package, ±30 kV IEC 61000-4-2 ESD immunity, low thermal resistance (20 K/W), and precise 2 % VBR tolerance for tight-clamp system designs.

Technical Context

This device operates as a unidirectional avalanche diode with fast response time enabled by Vishay's "Low-Noise" technology. Its clamping behavior is defined under 10/1000 μs waveform conditions, delivering 89 V clamping at 89 A while maintaining 52.2 V stand-off voltage (VRWM) and only 0.05 μA leakage at rated VRWM.

The SMF (DO-219AB) package supports wave and reflow soldering per J-STD-020 MSL level 1, with peak temperature up to 260 °C. Junction temperature range spans −55 °C to +175 °C, enabling use in under-hood automotive and high-temperature industrial environments.

Key Specifications

Parameter Value and Actual Design Meaning
VRWM 52.2 V - Maximum continuous reverse working voltage before significant leakage; sets upper limit for protected circuit DC bias.
VBR @ IT = 1 mA 60.76–63.24 V - Tight ±2 % tolerance ensures predictable turn-on across production lots and temperature.
VC @ IPPM 89 V - Clamping voltage during 10/1000 μs surge; limits transient energy delivered to downstream ICs.
IPPM 89 A - Peak pulse current handling capacity under standardized surge waveform; defines robustness against ISO 7637-2 Pulse 1/2a/5a events.
CD @ VR = 0 V, f = 1 MHz 242 pF - Junction capacitance impacts high-speed signal integrity; suitable for <10 Mbps data lines or DC power rails.
ESD Rating ±30 kV contact / ±30 kV air (IEC 61000-4-2) - Full-system ESD immunity without external shielding or filtering.
TJ max. +175 °C - Enables placement near heat sources (e.g., power converters) without derating in automotive modules.

Pinout & Package

Package: SMF (DO-219AB), low-profile surface-mount case compatible with SOD-123W footprint; dimensions: 3.9 mm × 1.9 mm × 1.08 mm (L × W × H); cathode marked by bar on top surface.

Pin/Terminal Circuit Role Design Meaning
Anode Current entry during forward conduction; tied to protected line ground or low-side return path Provides low-impedance discharge path to ground when transient exceeds VBR; must connect to lowest-impedance ground plane.
Cathode Current exit during reverse-biased clamping; connected to protected line (e.g., 52.2 V rail) Acts as the "protected node" terminal; clamps voltage to ≤89 V relative to anode during surge events.

Key Features

Feature Design Value
400 W peak pulse power (10/1000 μs) Supports high-energy transients common in 12 V/24 V automotive systems without thermal runaway.
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, mechanical shock, and humidity testing.
Halogen-free & RoHS-compliant Meets automotive OEM material compliance requirements (e.g., GMW3172, Ford WSS-M99P9999-A1).
MSL level 1 (J-STD-020) Unlimited floor life at ≤30 °C/60 % RH; no baking required prior to reflow assembly.
±2 % VBR tolerance Enables tighter margin design between VRWM and VBR, reducing risk of false triggering in noisy environments.

Applications

Automotive Infotainment Power Input Industrial CAN Bus Node Protection

Use Scenario: Protecting 52 V supply rail of head unit MCU and display driver ICs from load dump and jump-start surges.

IC Role / Device Role / Timing Role: Unidirectional TVS diode placed directly at connector entry point, clamping transients before they reach LDOs and PMICs.

Use Value: Withstands 89 A pulses and maintains 89 V clamping, preventing overvoltage damage to 65 V-rated input stages while adding only 242 pF loading.

Use Scenario: Safeguarding CAN transceiver VCC pins in factory automation gateways exposed to inductive switching noise.

IC Role / Device Role / Timing Role: Standoff protector on 5 V or 3.3 V auxiliary supply feeding isolated CAN PHY; co-located with ferrite bead for combined ESD/surge/noise suppression.

Use Value: ±30 kV IEC 61000-4-2 rating eliminates need for secondary ESD components; 20 K/W RthJL enables thermal stability during repeated 10/1000 μs events.

Telecom Remote Radio Unit (RRU) DC Feed Medical Imaging Sensor Bias Supply

Use Scenario: Securing 48–56 V DC power feed to outdoor 5G RRUs subject to lightning-induced surges on long cable runs.

IC Role / Device Role / Timing Role: Primary surge clamp on PoE++-derived DC input, upstream of DC/DC converter and GaN amplifier bias circuits.

Use Value: 400 W peak power rating handles multi-kA induced currents; DO-219AB package allows compact layout with minimal trace inductance for optimal clamping speed.

Use Scenario: Protecting high-precision analog bias supplies (e.g., for X-ray detector ASICs) where leakage and capacitance must be tightly controlled.

IC Role / Device Role / Timing Role: Low-leakage (0.05 μA @ 52.2 V) TVS on ultra-stable 52.2 V reference rail, minimizing DC error contribution.

Use Value: Sub-μA leakage preserves mV-level accuracy; 242 pF capacitance avoids resonance with low-ESR ceramic filters used in medical-grade LDO outputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ52A-E3/5A (Vishay) Same VRWM (52 V), but ±5 % VBR tolerance (61.2–67.2 V), higher VC (93.6 V), SMA package (larger footprint) Less precise clamping; requires PCB area increase (~2.5× SMF footprint); not AEC-Q101 qualified Select when cost sensitivity outweighs precision and space constraints; verify thermal margin due to higher RthJA.
TPSMD52A (Texas Instruments) Same VRWM (52 V), ±5 % VBR, 93.6 V VC, DO-214AB package; no AEC-Q101 or IEC 61000-4-2 certification stated Lacks automotive qualification and full ESD rating; lower surge robustness (400 W same, but no published IPPM curve validation) Acceptable for commercial-grade industrial controls where AEC-Q101 and ±30 kV ESD are not mandated.

Compared with SMAJ52A-E3/5A and TPSMD52A, VTVS52GSMF-HM3-18 delivers tighter ±2 % VBR control, lower clamping (89 V vs. 93.6 V), AEC-Q101 qualification, and verified ±30 kV ESD performance - making it the preferred choice for automotive and high-reliability industrial designs requiring predictable, repeatable surge response.

Availability

VTVS52GSMF-HM3-18 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial CAN networks, and telecom remote radio units requiring stable component supply, long-term lifecycle support, and consistent surge performance across production batches.

Supply support for VTVS52GSMF-HM3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.

The VTVS eSMP® Series targets high-density, high-surge applications demanding AEC-Q101 qualification, low-profile packaging, and precise clamping - specifically engineered for next-generation automotive ECUs and ruggedized industrial interfaces.

FAQ

What is the exact reverse breakdown voltage range for VTVS52GSMF-HM3-18?

The VTVS52GSMF-HM3-18 has a reverse breakdown voltage (VBR) of 60.76 V minimum to 63.24 V maximum at IT = 1 mA and TJ = 25 °C, reflecting its ±2 % tolerance grade. This tight specification ensures consistent clamping onset across temperature and production lots, critical for protecting 52.2 V rails in automotive modules where margin is constrained.

Is VTVS52GSMF-HM3-18 qualified for automotive use?

Yes, VTVS52GSMF-HM3-18 is AEC-Q101 qualified, having passed stress tests including temperature cycling, mechanical shock, and high-temperature operating life. This qualification confirms its suitability for under-hood and cabin applications such as infotainment power inputs and ADAS sensor interfaces where reliability under thermal and vibration stress is mandatory.

What does the "HM3-18" suffix indicate in VTVS52GSMF-HM3-18?

The "HM3-18" suffix denotes halogen-free (H), lead-free tin plating (M), 3 k per 7″ reel packaging (3), and tape-and-reel orientation code -18 (standard cathode-up orientation per SMF carrier tape spec). This matches Vishay's ordering convention in Document 85891 and ensures compatibility with automated SMT placement equipment calibrated for DO-219AB devices.

How does the clamping performance of VTVS52GSMF-HM3-18 compare to standard 52 V TVS diodes?

VTVS52GSMF-HM3-18 clamps to 89 V at 89 A (10/1000 μs), which is 4.6 V lower than typical ±5 % 52 V TVS diodes (e.g., SMAJ52A at 93.6 V). This 5 % reduction in clamping voltage directly improves system-level surge margin, especially for ICs with 90 V absolute maximum ratings - a key advantage in space-constrained automotive layouts.

Can VTVS52GSMF-HM3-18 be used in bidirectional configurations?

No, VTVS52GSMF-HM3-18 is a unidirectional TVS diode, intended for DC rail protection where polarity is fixed. For AC or bidirectional signal line protection (e.g., RS-485), a dedicated bidirectional variant like VTVS52GSMF-BD would be required - the "G" in VTVS52GSMF-HM3-18 refers only to ±2 % VBR tolerance, not polarity.

VTVS52GSMF-HM3-18 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-219AB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
52.2V
Voltage - Breakdown (Min):
60.76V
Voltage - Clamping (Max) @ Ipp:
89V
Current - Peak Pulse (10/1000µs):
4.41A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
242pF @ 1MHz
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-219AB (SMF)

VTVS52GSMF-HM3-18 FAQ

1.How can I place an order for VTVS52GSMF-HM3-18 through Aetrix?

Please submit a Request for Quotation (RFQ) for VTVS52GSMF-HM3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for VTVS52GSMF-HM3-18 reliable?

The price and inventory of VTVS52GSMF-HM3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS52GSMF-HM3-18 is usually 5 days.

3.What payment methods are accepted for VTVS52GSMF-HM3-18?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS52GSMF-HM3-18 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for VTVS52GSMF-HM3-18?

VTVS52GSMF-HM3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your VTVS52GSMF-HM3-18 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for VTVS52GSMF-HM3-18?

For technical support, including VTVS52GSMF-HM3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS52GSMF-HM3-18 requirements.

6.How does Aetrix verify that VTVS52GSMF-HM3-18 is sourced from the original manufacturer or authorized distributors?

All VTVS52GSMF-HM3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS52GSMF-HM3-18 meets industry standards.

7.What is the process for return or replacement of VTVS52GSMF-HM3-18?

All VTVS52GSMF-HM3-18 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS52GSMF-HM3-18, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The VTVS52GSMF-HM3-18 part is unused and in its original packaging.

Return procedure for VTVS52GSMF-HM3-18:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

VTVS52GSMF-HM3-18 Tags

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