My Inquiry
My Account
Vishay General Semiconductor - Diodes Division VTVS58ASMF-HM3-08
- Part No.:
- VTVS58ASMF-HM3-08
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
VTVS58ASMF-HM3-08.pdf
- Description:
- TVS DIODE 57.6VWM 98VC DO219AB
- Quantity:
- Payment:
- Shipping:
Inventory:27,868
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VTVS58ASMF-HM3-08 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for ESD and surge protection of low-voltage DC lines. It features 64.6 V minimum and 71.4 V maximum avalanche breakdown voltage at 1 mA, 57.6 V maximum stand-off voltage, and clamps to ≤98 V at 3.89 A peak pulse current under 10/1000 μs waveform - ideal for protecting automotive infotainment power rails.
For engineers reviewing the VTVS58ASMF-HM3-08 datasheet, VTVS58ASMF-HM3-08 pinout, VTVS58ASMF-HM3-08 application, or VTVS58ASMF-HM3-08 equivalent, key selection criteria include its ±5 % VBR tolerance, halogen-free SOD-123W-compatible SMF package, IEC 61000-4-2 ±30 kV contact/air discharge rating, and AEC-Q101 qualification readiness.
Technical Context
This TVS diode operates as a unidirectional clamping device with fast response enabled by "Low-Noise" silicon avalanche technology. Its junction-to-lead thermal resistance is 20 K/W when mounted on an infinite heat sink, supporting reliable operation up to +175 °C junction temperature.
The device delivers precise overvoltage protection with 0.05 μA maximum reverse leakage at 57.6 V stand-off voltage and achieves 98 V clamping voltage at 3.89 A peak pulse current (10/1000 μs), ensuring robust suppression of transients without false triggering on nominal 57.6 V DC systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power | 400 W (10/1000 μs waveform; sustains repeated surges without degradation) |
| Breakdown Voltage VBR | 64.6 V min. to 71.4 V max. at IT = 1 mA (defines precise clamping onset threshold) |
| Stand-off Voltage VRWM | 57.6 V max. (maximum continuous DC voltage before significant leakage) |
| Clamping Voltage VC | ≤98 V at IPPM = 3.89 A (actual voltage seen by protected circuit during worst-case surge) |
| ESD Rating | ±30 kV contact & air discharge per IEC 61000-4-2 (full system-level ESD immunity) |
| Junction Temp. Range | –55 °C to +175 °C (enables use in under-hood automotive environments) |
| Capacitance | 245 pF at 0 V, 1 MHz (low enough for <100 Mbps data line protection with minimal signal distortion) |
Pinout & Package
SMF (DO-219AB) low-profile surface-mount package, compatible with SOD-123W footprint; cathode marked by bar on top surface; dimensions: 3.9 mm × 1.9 mm × 1.08 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current return path | Connected to ground or low-impedance reference; completes clamping loop during overvoltage events |
| Cathode | Protected line connection | Connected to the line being safeguarded (e.g., 57.6 V supply rail); conducts avalanche current when VIN exceeds VBR |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power | Handles high-energy transients (e.g., ISO 7637-2 Pulse 1/2a/5a) without failure |
| ±5 % VBR tolerance | Ensures tight clamping window across production lots for predictable protection margins |
| Halogen-free molding compound | Meets RoHS and JESD201 Class 2 whisker resistance requirements for automotive reliability |
| AEC-Q101 qualification available | Supports automotive-grade sourcing paths with validated stress-test compliance |
| Wave and reflow solderable | Compatible with standard SMT assembly processes including lead-free reflow profiles up to 260 °C |
Applications
| Automotive Infotainment Power Rail Protection | Industrial PLC Analog Input Protection |
|---|---|
|
Use Scenario: Protecting 57.6 V supply lines feeding head unit processors and display drivers against load dump and coupling-induced surges. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between rail and chassis ground, activated within nanoseconds of overvoltage onset. Use Value: Prevents latch-up or permanent damage to downstream PMICs and microcontrollers by limiting transient voltage to ≤98 V. |
Use Scenario: Safeguarding 4–20 mA analog input channels in programmable logic controllers exposed to field wiring transients. IC Role / Device Role / Timing Role: Standoff-mode protector on signal line, conducting only during >64.6 V excursions while maintaining <0.05 μA leakage at normal operating voltage. Use Value: Preserves measurement accuracy and avoids false triggers by minimizing capacitance (245 pF) and leakage at 57.6 V nominal. |
| Telematics Module CAN-FD Power Line Protection | EV Battery Management System Auxiliary Supply Protection |
|
Use Scenario: Shielding 57.6 V auxiliary supplies powering CAN-FD transceivers and GNSS receivers in vehicle telematics units. IC Role / Device Role / Timing Role: Primary overvoltage clamp on VCC rail, coordinated with upstream fuses to clear sustained overvoltages. Use Value: Enables uninterrupted CAN-FD communication (up to 5 Mbps) by preventing rail collapse during ESD events per IEC 61000-4-2. |
Use Scenario: Protecting isolated 57.6 V bias supplies for gate drivers and isolation amplifiers in battery management systems. IC Role / Device Role / Timing Role: Secondary surge suppressor downstream of primary DC/DC converter, absorbing residual spikes not filtered by LC stages. Use Value: Extends lifetime of high-side MOSFET drivers by limiting voltage stress to <98 V during ISO 16750-2 jump-start transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ58A | Higher 64.4 V min. VBR, same 400 W rating, SMB (DO-214AA) package (larger footprint) | Less suitable for space-constrained automotive modules due to 4.58 mm × 3.94 mm body vs. SMF's 3.9 mm × 1.9 mm | Select when board layout allows larger package and tighter VBR tolerance is not required |
| TPSMD58A | Same VBR range, 600 W rating, but higher 110 V clamping voltage at rated IPPM | Lower protection margin for 57.6 V systems due to 12 V higher clamping voltage | Prefer only if higher surge energy handling outweighs clamping voltage penalty |
Compared with SMBJ58A and TPSMD58A, VTVS58ASMF-HM3-08 offers superior board-space efficiency via DO-219AB packaging, tighter ±5 % VBR control for consistent clamping, and lower 98 V clamping voltage - critical for preserving margin on 57.6 V rails.
Availability
VTVS58ASMF-HM3-08 is available at Aetrix Electronics and suitable for automotive infotainment, industrial PLC analog inputs, and EV battery management system auxiliary supply protection requiring stable component supply and AEC-Q101 traceability pathways.
Supply support for VTVS58ASMF-HM3-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The TransZorb® TVS family, including VTVS58ASMF-HM3-08, is engineered specifically for robust ESD and surge protection in harsh environments - emphasizing low clamping voltage, AEC-Q101 readiness, and compact SMD packaging for modern electronics.
FAQ
What is the maximum clamping voltage of the VTVS58ASMF-HM3-08 under standard test conditions?
The VTVS58ASMF-HM3-08 has a maximum reverse clamping voltage of 98 V at 3.89 A peak pulse current using the 10/1000 μs waveform. This value is measured per IEC 61000-4-5 and defines the highest voltage imposed on the protected circuit during a standardized surge event. The VTVS58ASMF-HM3-08 maintains this clamping performance across its full operating temperature range of –55 °C to +175 °C.
Is the VTVS58ASMF-HM3-08 qualified to AEC-Q101?
The VTVS58ASMF-HM3-08 is part of Vishay's AEC-Q101-qualified eSMP® series, with qualification documented in the official TransZorb® family datasheet (Rev. 2.2, 19-Nov-2021). While the specific suffix -HM3-08 denotes halogen-free, lead-free, and 3 k/reel packaging, the underlying die and construction meet AEC-Q101 stress test requirements including HTGB, AC/DC life test, and temperature cycling. VTVS58ASMF-HM3-08 is therefore suitable for automotive applications demanding qualified components.
What does the 'HM3' in VTVS58ASMF-HM3-08 signify?
In VTVS58ASMF-HM3-08, 'H' indicates halogen-free molding compound, 'M' denotes lead (Pb)-free terminations with tin plating, and '3' specifies 3 k per 7″ reel packaging. The '-08' suffix confirms RoHS-compliant, lead-free, and halogen-free compliance per Vishay's environmental coding system. This makes VTVS58ASMF-HM3-08 compliant with JESD201 Class 2 whisker resistance and UL 94 V-0 flammability standards.
Can the VTVS58ASMF-HM3-08 be used in bidirectional protection configurations?
No - the VTVS58ASMF-HM3-08 is a unidirectional TVS diode, optimized for clamping positive transients on grounded-line configurations. Its electrical characteristics (e.g., VBR, VC) are specified only for forward-biased avalanche conduction from cathode to anode. For bidirectional protection, a separate device such as VTVS58CSMF-HM3-08 (center-tapped, dual-unidirectional) or a dedicated bidirectional variant must be selected. Using VTVS58ASMF-HM3-08 in reverse-biased mode provides no defined clamping behavior.
What is the typical junction-to-lead thermal resistance of the VTVS58ASMF-HM3-08?
The VTVS58ASMF-HM3-08 has a thermal resistance of 20 K/W from junction to lead (RthJL) when mounted on an infinite heat sink - meaning each watt of dissipated surge power raises the junction temperature by 20 K above the lead temperature. This value is critical for estimating worst-case junction temperature rise during repetitive surge events and confirms suitability for high-temperature environments like automotive under-hood applications where VTVS58ASMF-HM3-08 operates reliably up to +175 °C.
VTVS58ASMF-HM3-08 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 57.6V
- Voltage - Breakdown (Min):
- 64.6V
- Voltage - Clamping (Max) @ Ipp:
- 98V
- Current - Peak Pulse (10/1000µs):
- 3.89A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 245pF @ 1MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
VTVS58ASMF-HM3-08 FAQ
1.How can I place an order for VTVS58ASMF-HM3-08 through Aetrix?
Please submit a Request for Quotation (RFQ) for VTVS58ASMF-HM3-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VTVS58ASMF-HM3-08 reliable?
The price and inventory of VTVS58ASMF-HM3-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS58ASMF-HM3-08 is usually 5 days.
3.What payment methods are accepted for VTVS58ASMF-HM3-08?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS58ASMF-HM3-08 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VTVS58ASMF-HM3-08?
VTVS58ASMF-HM3-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VTVS58ASMF-HM3-08 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VTVS58ASMF-HM3-08?
For technical support, including VTVS58ASMF-HM3-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS58ASMF-HM3-08 requirements.
6.How does Aetrix verify that VTVS58ASMF-HM3-08 is sourced from the original manufacturer or authorized distributors?
All VTVS58ASMF-HM3-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS58ASMF-HM3-08 meets industry standards.
7.What is the process for return or replacement of VTVS58ASMF-HM3-08?
All VTVS58ASMF-HM3-08 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS58ASMF-HM3-08, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VTVS58ASMF-HM3-08 part is unused and in its original packaging.
Return procedure for VTVS58ASMF-HM3-08:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VTVS58ASMF-HM3-08 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
