Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division VTVS58ASMF-M3-18

Part No.:
VTVS58ASMF-M3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-219AB
Datasheet:
AetrixVTVS58ASMF-M3-18.pdf
Description:
TVS DIODE 57.6VWM 98VC DO219AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,785

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

VTVS58ASMF-M3-18 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for robust ESD and surge protection on low-voltage DC lines. It features a 57.6 V stand-off voltage (VRWM), 64.6–71.4 V reverse breakdown voltage (VBR), 98 A peak pulse current (IPPM), and clamps to ≤98 V at rated pulse, targeting automotive infotainment power rails and industrial sensor interfaces.

For engineers reviewing the VTVS58ASMF-M3-18 datasheet, VTVS58ASMF-M3-18 pinout, VTVS58ASMF-M3-18 application, or VTVS58ASMF-M3-18 equivalent, key selection criteria include its ±5 % VBR tolerance, 245 pF junction capacitance at 0 V, 175 °C max junction temperature, and AEC-Q101 qualification status - critical for automotive-grade reliability validation and board-level ESD immunity design.

Technical Context

This device operates as a unidirectional avalanche diode, triggered when reverse voltage exceeds its 64.6–71.4 V breakdown range at 1 mA test current. Its clamping action limits transients to ≤98 V under 10/1000 μs waveform stress, with thermal resistance of 20 K/W to infinite heat sink.

It delivers ±30 kV ESD protection per IEC 61000-4-2 (contact and air discharge), uses halogen-free molding compound, and is qualified to AEC-Q101 - confirming suitability for automotive under-hood and cabin electronics where high-temperature stability and solder-reflow compatibility are mandatory.

Key Specifications

Parameter Value and Actual Design Meaning
Peak Pulse Power 400 W (10/1000 μs waveform; defines maximum transient energy absorption capability)
Stand-off Voltage (VRWM) 57.6 V (maximum continuous reverse operating voltage before leakage exceeds 0.05 μA)
Breakdown Voltage (VBR) 64.6–71.4 V at IT = 1 mA (±5 % tolerance; sets precise overvoltage trip threshold)
Clamping Voltage (VC) ≤98 V at IPPM = 3.89 A (actual voltage seen by protected circuit during full-rated surge)
Junction Capacitance 245 pF at VR = 0 V, f = 1 MHz (impacts signal integrity in high-speed data line protection)
ESD Rating ±30 kV contact / ±30 kV air (IEC 61000-4-2; ensures survivability against human-body-model discharges)
Operating Temperature −55 °C to +175 °C (enables deployment in engine control units and powertrain modules)

Pinout & Package

Package: SMF (DO-219AB), low-profile surface-mount case compatible with SOD-123W outline; dimensions 3.9 mm × 1.9 mm × 1.08 mm; cathode marked by bar on top surface.

Pin/Terminal Circuit Role Design Meaning
Anode Current entry terminal during forward conduction Connected to protected line's ground or low-side return path in unidirectional configuration
Cathode Current exit terminal during reverse avalanche clamping Connected to protected line's positive rail; polarity marking (bar) enables correct PCB orientation

Key Features

Feature Design Value
400 W peak pulse power Enables suppression of high-energy surges (e.g., ISO 7637-2 Pulse 1/2a) without failure
±5 % VBR tolerance Ensures tight voltage margin between VRWM and VBR for reliable triggering without false trips
AEC-Q101 qualification Validates reliability for automotive applications including temperature cycling, HTRB, and mechanical shock
Low-profile SMF package Reduces board space vs. SMA/SMB; supports automated placement and reflow soldering at ≤260 °C peak
Halogen-free construction Meets RoHS and JEDEC J-STD-020 MSL level 1 requirements for green manufacturing and moisture resistance

Applications

Automotive Infotainment Power Rail Industrial CAN Bus Interface

Use Scenario: Protecting 12 V supply lines feeding head unit microcontrollers and display drivers from load dump and alternator ripple.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between VCC and GND to clamp transients above 57.6 V while maintaining low leakage.

Use Value: Prevents latch-up or permanent damage to downstream LDOs and SoCs during 400 W surge events.

Use Scenario: Safeguarding CANH/CANL differential pair against ESD and coupled surges in factory automation nodes.

IC Role / Device Role / Timing Role: Discrete TVS mounted on each CAN line to ground, leveraging 245 pF capacitance for minimal signal distortion.

Use Value: Maintains CAN FD bit timing integrity up to 5 Mbps while surviving ±30 kV contact discharge.

Smart Sensor Signal Conditioning Power Over Ethernet (PoE) Midspan Protection

Use Scenario: Shielding analog front-end inputs of pressure/temperature sensors in HVAC control modules from cable-induced transients.

IC Role / Device Role / Timing Role: Low-leakage (0.05 μA) TVS placed across input pins to preserve sensor offset accuracy.

Use Value: Enables stable 16-bit ADC readings without baseline drift caused by TVS leakage or clamping noise.

Use Scenario: Front-end surge suppression on 48 V DC PoE midspan injectors before IEEE 802.3af/at compliance filtering.

IC Role / Device Role / Timing Role: Primary clamping device absorbing 10/1000 μs surges up to 98 A before secondary MOVs engage.

Use Value: Extends system lifetime by limiting voltage stress on PoE controller ICs during lightning-induced surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ58A Same 58 V nominal breakdown but SMA package (DO-214AC); 400 W rating; ±5 % VBR; 274 pF capacitance Larger footprint (4.5 mm × 2.7 mm); higher thermal resistance (35 K/W); not AEC-Q101 qualified Select when cost sensitivity outweighs automotive qualification and board space constraints
SMCJ58A Higher 1500 W rating; same 58 V nominal breakdown; DO-214AB package; 270 pF capacitance Designed for higher-energy transients (e.g., ISO 7637-2 Pulse 5a); larger size (7.1 mm × 6.2 mm); no AEC-Q101 listing Choose for industrial power supplies requiring >1 kW surge handling, not automotive ECU space-limited designs

Compared with SMAJ58A and SMCJ58A, VTVS58ASMF-M3-18 offers superior automotive qualification, smaller SMF footprint, and lower capacitance - making it optimal for space-constrained, high-reliability 12 V/24 V systems where ESD robustness and thermal performance are prioritized over raw power rating.

Availability

VTVS58ASMF-M3-18 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial CAN networks, smart sensor modules, and PoE midspan injectors requiring stable component supply with guaranteed long-term availability.

Supply support for VTVS58ASMF-M3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.

The VTVS eSMP® Series targets compact, high-power transient suppression in harsh environments - engineered specifically for AEC-Q101-compliant automotive subsystems and industrial equipment demanding extended temperature operation and repeatable clamping performance.

FAQ

What is the maximum clamping voltage of the VTVS58ASMF-M3-18 under full-rated surge conditions?

The VTVS58ASMF-M3-18 clamps to a maximum of 98 V when subjected to its rated 3.89 A peak pulse current (10/1000 μs waveform). This value is measured at the device terminals and represents the upper limit of voltage imposed on the protected circuit during worst-case transient events, ensuring downstream ICs remain within safe operating limits.

Is VTVS58ASMF-M3-18 qualified for automotive use according to industry standards?

Yes, VTVS58ASMF-M3-18 is AEC-Q101 qualified, confirming its reliability for automotive applications including engine control, body electronics, and infotainment systems. The qualification covers stress tests such as high-temperature reverse bias, temperature cycling, and mechanical shock - all performed per the AEC-Q101 standard revision applicable at time of certification.

What is the junction capacitance of VTVS58ASMF-M3-18 and how does it affect high-speed signal lines?

The VTVS58ASMF-M3-18 exhibits 245 pF typical junction capacitance at 0 V reverse bias and 1 MHz frequency. While suitable for DC power rail protection and low-speed buses like CAN, this capacitance may attenuate edges or cause jitter on signals above ~10 Mbps; for USB or Ethernet, lower-capacitance TVS variants are recommended.

Can VTVS58ASMF-M3-18 be used in both wave and reflow soldering processes?

Yes, VTVS58ASMF-M3-18 is fully compatible with both wave and reflow soldering. Its SMF (DO-219AB) package supports peak reflow temperatures up to 260 °C per J-STD-020, and its halogen-free molding compound meets IPC-J-STD-020 moisture sensitivity level 1 - eliminating pre-bake requirements and enabling standard SMT assembly flow.

What is the reverse leakage current specification for VTVS58ASMF-M3-18 at its maximum working voltage?

At its maximum stand-off voltage of 57.6 V (VRWM), the VTVS58ASMF-M3-18 guarantees reverse leakage current ≤0.05 μA at 25 °C ambient. This ultra-low leakage preserves power efficiency in always-on automotive modules and prevents false triggering in precision sensor bias networks.

VTVS58ASMF-M3-18 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-219AB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
57.6V
Voltage - Breakdown (Min):
64.6V
Voltage - Clamping (Max) @ Ipp:
98V
Current - Peak Pulse (10/1000µs):
3.89A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
245pF @ 1MHz
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-219AB (SMF)

VTVS58ASMF-M3-18 FAQ

1.How can I place an order for VTVS58ASMF-M3-18 through Aetrix?

Please submit a Request for Quotation (RFQ) for VTVS58ASMF-M3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for VTVS58ASMF-M3-18 reliable?

The price and inventory of VTVS58ASMF-M3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS58ASMF-M3-18 is usually 5 days.

3.What payment methods are accepted for VTVS58ASMF-M3-18?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS58ASMF-M3-18 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for VTVS58ASMF-M3-18?

VTVS58ASMF-M3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your VTVS58ASMF-M3-18 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for VTVS58ASMF-M3-18?

For technical support, including VTVS58ASMF-M3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS58ASMF-M3-18 requirements.

6.How does Aetrix verify that VTVS58ASMF-M3-18 is sourced from the original manufacturer or authorized distributors?

All VTVS58ASMF-M3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS58ASMF-M3-18 meets industry standards.

7.What is the process for return or replacement of VTVS58ASMF-M3-18?

All VTVS58ASMF-M3-18 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS58ASMF-M3-18, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The VTVS58ASMF-M3-18 part is unused and in its original packaging.

Return procedure for VTVS58ASMF-M3-18:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

VTVS58ASMF-M3-18 Tags

  • VTVS58ASMF-M3-18
  • VTVS58ASMF-M3-18 PDF
  • VTVS58ASMF-M3-18 Datasheet
  • VTVS58ASMF-M3-18 Specifications
  • VTVS58ASMF-M3-18 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division VTVS58ASMF-M3-18
  • Buy VTVS58ASMF-M3-18
  • VTVS58ASMF-M3-18 Price
  • VTVS58ASMF-M3-18 Distributor
  • VTVS58ASMF-M3-18 Supplier
  • VTVS58ASMF-M3-18 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER