My Inquiry
My Account
Vishay General Semiconductor - Diodes Division VTVS58GSMF-HM3-18
- Part No.:
- VTVS58GSMF-HM3-18
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
VTVS58GSMF-HM3-18.pdf
- Description:
- TVS DIODE 57.6VWM 98VC DO219AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,629
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VTVS58GSMF-HM3-18 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for ESD and surge protection of low-voltage DC lines. It features 66.64 V minimum and 69.36 V maximum reverse breakdown voltage at 1 mA, 57.6 V maximum stand-off voltage, 4.01 A peak pulse current (10/1000 μs), and clamps to 98 V at rated pulse current - deployed in automotive infotainment power rails and industrial sensor interfaces.
For engineers reviewing the VTVS58GSMF-HM3-18 datasheet, VTVS58GSMF-HM3-18 pinout, VTVS58GSMF-HM3-18 application, or VTVS58GSMF-HM3-18 equivalent, key selection criteria include ±2 % VBR tolerance, halogen-free construction, AEC-Q101 qualification eligibility, IEC 61000-4-2 ±30 kV ESD immunity, and compatibility with SOD-123W footprint constraints.
Technical Context
This TVS diode operates as a unidirectional clamping device, leveraging avalanche breakdown to divert transient energy away from sensitive downstream circuitry. Its low dynamic impedance ensures rapid response (<1 ns) and stable clamping under 10/1000 μs surges, with thermal resistance of 20 K/W enabling reliable operation up to +175 °C junction temperature.
The SMF package supports wave and reflow soldering per J-STD-020 MSL level 1, with peak temperature rating of 260 °C. Its 1.08 mm height and 3.9 mm × 1.9 mm outline meet space-constrained PCB layouts while maintaining 400 W peak pulse power dissipation capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR min/max | 66.64 V / 69.36 V at IT = 1 mA - defines precise clamping onset threshold with ±2 % tolerance for tight system-level overvoltage margin control |
| VRWM | 57.6 V max - maximum continuous reverse working voltage before leakage exceeds 0.05 μA, suitable for 48 V nominal bus protection |
| IPPM | 4.01 A at 10/1000 μs waveform - peak surge current handling capacity directly tied to 400 W pulse power rating |
| VC | 98 V at IPPM - clamped voltage seen by protected IC during full-rated surge, limiting stress on downstream 100 V-rated components |
| CD | 245 pF at VR = 0 V, f = 1 MHz - parasitic capacitance impacts high-speed signal integrity; appropriate for <10 Mbps data lines or power rail use |
| TJ max | +175 °C - enables deployment in under-hood automotive environments and high-temperature industrial enclosures without derating |
| ESD Rating | ±30 kV contact / ±30 kV air per IEC 61000-4-2 - meets Level 4 immunity for user-accessible ports and connectors |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case compatible with SOD-123W footprint; dimensions 3.9 mm × 1.9 mm × 1.08 mm; cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path | Connected to protected line; conducts surge current toward ground when VBR exceeded |
| Cathode | Reference node / clamping reference | Connected to system ground or low-impedance return; establishes clamping voltage relative to this node |
Key Features
| Feature | Design Value |
|---|---|
| ±2 % VBR tolerance | Enables tighter system overvoltage design margins versus ±5 % variants, reducing need for guardbanding in 48 V–60 V applications |
| Halogen-free molding compound | Complies with IPC-1752A material declaration requirements and supports RoHS-compliant manufacturing without brominated flame retardants |
| AEC-Q101 qualification option | Supports automotive-grade reliability validation (HTOL, TC, UHAST) when ordered with "H" environmental code - critical for ADAS and body electronics |
| Low-noise fast response | Sub-nanosecond turn-on time minimizes voltage overshoot during ESD events, protecting high-speed analog front-ends and precision ADC references |
| Solderable per J-STD-020 | MSL level 1 rating eliminates bake requirements prior to reflow, streamlining high-volume SMT assembly for industrial and automotive production |
Applications
| Automotive Infotainment Power Rails | Industrial CAN Bus Transceivers |
|---|---|
|
Use Scenario: Protection of 12 V/48 V supply inputs to head unit MCUs and display drivers against load dump and jump-start transients. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between input rail and chassis ground, absorbing 400 W pulses without degradation. Use Value: Maintains VC ≤ 98 V during 4.01 A surges, ensuring downstream 100 V-rated DC-DC converters remain within safe operating area. |
Use Scenario: ESD and surge protection on CAN_H/CAN_L lines in factory automation nodes exposed to cable coupling and relay switching noise. IC Role / Device Role / Timing Role: Bidirectional protection implemented using two VTVS58GSMF-HM3-18 devices (anode-to-anode) across differential pair. Use Value: 245 pF capacitance avoids signal distortion at 1 Mbps CAN FD rates; ±30 kV ESD rating exceeds ISO 10605 requirements. |
| Smart Meter Power Input Stage | Medical Sensor Interface Protection |
|
Use Scenario: Guarding AC/DC converter outputs and battery backup circuits in utility meters subject to lightning-induced surges on distribution lines. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 57.6 V-rated auxiliary supply rail, coordinated with upstream MOV and fuse. Use Value: 175 °C max junction temperature supports operation inside sealed, thermally isolated meter housings without forced cooling. |
Use Scenario: Protecting analog front-end inputs of patient-connected biosensors from electrostatic discharge during handling and cable insertion. IC Role / Device Role / Timing Role: Low-leakage (0.05 μA at VRWM) unidirectional TVS placed between signal line and AGND, minimizing DC offset error. Use Value: Tight ±2 % VBR ensures consistent clamping across production batches, critical for FDA-cleared signal chain accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| VTVS58ASMF-HM3-18 | ±5 % VBR tolerance (64.6 V–71.4 V), same package and 400 W rating | Acceptable where wider clamping window is permissible; lower cost alternative for non-automotive designs | Select when ±2 % precision is not required and BOM cost optimization is prioritized |
| SMAJ58A-E3/5A | Same VRWM (58 V), but 400 W rating with ±5 % VBR; SMA package (DO-214AC), larger footprint | Requires PCB layout change; higher thermal mass but lower RthJL (15 K/W) | Choose when existing SMA footprint is standardized and higher surge repetition rate is needed |
Compared with VTVS58GSMF-HM3-18, the ±5 % VTVS58ASMF-HM3-18 offers cost savings at the expense of clamping precision, while SMAJ58A-E3/5A trades compactness for improved thermal cycling endurance and legacy footprint compatibility.
Availability
VTVS58GSMF-HM3-18 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial CAN networks, smart metering platforms, and medical sensor interfaces requiring stable component supply with halogen-free, AEC-Q101-capable surge protection.
Supply support for VTVS58GSMF-HM3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The TransZorb® eSMP® series - including VTVS58GSMF-HM3-18 - is engineered for robust transient suppression in space-constrained, high-temperature environments, with emphasis on AEC-Q101 readiness and IEC 61000-4-2 compliance.
FAQ
What is the reverse breakdown voltage tolerance for VTVS58GSMF-HM3-18?
The VTVS58GSMF-HM3-18 has a ±2 % reverse breakdown voltage tolerance, with specified VBR range of 66.64 V to 69.36 V at IT = 1 mA. This tighter tolerance enables more precise overvoltage protection design compared to ±5 % variants like VTVS58ASMF-HM3-18, making VTVS58GSMF-HM3-18 especially suitable for applications where clamping consistency is critical, such as automotive power domains and medical sensor front-ends.
Is VTVS58GSMF-HM3-18 qualified to AEC-Q101?
VTVS58GSMF-HM3-18 is offered in an AEC-Q101-qualified version when ordered with the "H" environmental code (as indicated in the ordering matrix). The base part number VTVS58GSMF-HM3-18 includes the "H", confirming its qualification status. This makes VTVS58GSMF-HM3-18 appropriate for automotive applications including body control modules, infotainment systems, and ADAS sensors where stress-tested reliability is mandatory.
What is the maximum clamping voltage of VTVS58GSMF-HM3-18 under surge conditions?
The maximum reverse clamping voltage (VC) of VTVS58GSMF-HM3-18 is 98 V at its rated peak pulse current of 4.01 A (10/1000 μs waveform). This value represents the highest voltage that will appear across the protected line during a full-rated transient event, ensuring downstream components rated for ≥100 V remain within safe operating limits. VTVS58GSMF-HM3-18 achieves this with low dynamic impedance and sub-nanosecond response.
Can VTVS58GSMF-HM3-18 be used for bidirectional protection?
VTVS58GSMF-HM3-18 is a unidirectional TVS diode and is not inherently bidirectional. However, it can be configured for bidirectional protection by connecting two units anode-to-anode across a differential line (e.g., CAN_H/CAN_L), which creates symmetrical clamping in both polarities. This configuration preserves the 98 V clamping level and ±30 kV ESD rating of VTVS58GSMF-HM3-18 while meeting IEC 61000-4-2 and ISO 11898-2 requirements.
What is the thermal resistance and maximum junction temperature of VTVS58GSMF-HM3-18?
VTVS58GSMF-HM3-18 has a thermal resistance RthJL of 20 K/W (junction-to-lead, mounted on infinite heat sink) and a maximum junction temperature TJ of +175 °C. These specifications allow VTVS58GSMF-HM3-18 to operate reliably in high-ambient environments such as engine compartments or sealed industrial enclosures without thermal derating, provided PCB copper pour and lead soldering meet Vishay's recommended footprint guidelines.
VTVS58GSMF-HM3-18 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 57.6V
- Voltage - Breakdown (Min):
- 66.64V
- Voltage - Clamping (Max) @ Ipp:
- 98V
- Current - Peak Pulse (10/1000µs):
- 4.01A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 245pF @ 1MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
VTVS58GSMF-HM3-18 FAQ
1.How can I place an order for VTVS58GSMF-HM3-18 through Aetrix?
Please submit a Request for Quotation (RFQ) for VTVS58GSMF-HM3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VTVS58GSMF-HM3-18 reliable?
The price and inventory of VTVS58GSMF-HM3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS58GSMF-HM3-18 is usually 5 days.
3.What payment methods are accepted for VTVS58GSMF-HM3-18?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS58GSMF-HM3-18 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VTVS58GSMF-HM3-18?
VTVS58GSMF-HM3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VTVS58GSMF-HM3-18 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VTVS58GSMF-HM3-18?
For technical support, including VTVS58GSMF-HM3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS58GSMF-HM3-18 requirements.
6.How does Aetrix verify that VTVS58GSMF-HM3-18 is sourced from the original manufacturer or authorized distributors?
All VTVS58GSMF-HM3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS58GSMF-HM3-18 meets industry standards.
7.What is the process for return or replacement of VTVS58GSMF-HM3-18?
All VTVS58GSMF-HM3-18 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS58GSMF-HM3-18, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VTVS58GSMF-HM3-18 part is unused and in its original packaging.
Return procedure for VTVS58GSMF-HM3-18:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VTVS58GSMF-HM3-18 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
