My Inquiry
My Account
Vishay General Semiconductor - Diodes Division VTVS63GSMF-M3-08
- Part No.:
- VTVS63GSMF-M3-08
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
VTVS63GSMF-M3-08.pdf
- Description:
- TVS DIODE 63VWM 108VC DO219AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,932
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VTVS63GSMF-M3-08 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for high-energy ESD and surge protection on DC power rails and signal lines. It features 63 V stand-off voltage (VRWM), 73.01–75.99 V reverse breakdown voltage (VBR at IT = 1 mA), and clamps to ≤108 V at 3.65 A peak pulse current (10/1000 μs), with ±2 % VBR tolerance and IEC 61000-4-2 ±30 kV contact/air discharge compliance.
For engineers reviewing the VTVS63GSMF-M3-08 datasheet, VTVS63GSMF-M3-08 pinout, VTVS63GSMF-M3-08 application, or VTVS63GSMF-M3-08 equivalent, this device is selected for robust overvoltage protection in automotive infotainment power supplies, industrial sensor interfaces, and telecom line cards where low clamping voltage, fast response, and AEC-Q101 qualification are critical.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its precise 73.01–75.99 V breakdown threshold. Its low thermal resistance (RthJL = 20 K/W) enables reliable 400 W peak pulse power dissipation under 10/1000 μs transients without thermal runaway.
The device uses "Low-Noise" silicon technology for sub-nanosecond response time and maintains stable clamping performance across -55 °C to +175 °C junction temperature range. Its SMF package supports wave and reflow soldering per J-STD-020 MSL level 1, with halogen-free molding compound and tin-plated terminations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power | 400 W (10/1000 μs waveform; defines maximum transient energy it can absorb without failure) |
| Stand-off Voltage (VRWM) | 63 V (maximum continuous reverse voltage before significant leakage; sets operating margin for 48 V–60 V systems) |
| Breakdown Voltage (VBR) | 73.01–75.99 V at IT = 1 mA (tight ±2 % tolerance ensures predictable turn-on across production lots) |
| Clamping Voltage (VC) | ≤108 V at IPPM = 3.65 A (low VC minimizes stress on downstream ICs during surge events) |
| ESD Rating | ±30 kV contact / ±30 kV air (IEC 61000-4-2 Level 4; protects against human-body-model and system-level ESD) |
| Junction Temperature Range | -55 °C to +175 °C (supports under-hood automotive and industrial environments without derating) |
| Capacitance (CD) | 227 pF at VR = 0 V, f = 1 MHz (low enough for <10 Mbps data lines; not suitable for USB 3.0 or HDMI) |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case with cathode marking bar; dimensions 3.9 mm × 1.9 mm × 1.08 mm; compatible with SOD-123W footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction; tied to protected line's lower-potential side | Connected to ground or return path in unidirectional configuration; defines polarity-sensitive placement |
| Cathode | Current exit point during reverse-biased clamping; marked with bar on package top | Connected to the line being protected (e.g., 48 V rail); conducts only when transient exceeds VRWM |
Key Features
| Feature | Design Value |
|---|---|
| ±2 % VBR tolerance | Enables tighter system-level overvoltage margin control vs. ±5 % variants, reducing design guardbanding |
| 400 W peak pulse power | Handles high-energy surges such as ISO 7637-2 Pulse 1/2a/5a in automotive power nets without degradation |
| AEC-Q101 qualified | Validated for automotive-grade reliability including HTOL, TC, and ESD stress-no additional qualification needed |
| Low-profile SMF package | 1.08 mm height allows use in space-constrained modules (e.g., ADAS camera ECUs, telematics units) |
| Halogen-free & RoHS-compliant | Meets automotive OEM material compliance requirements (e.g., GMW3172, Ford WSS-M99P9999-A1) |
Applications
| Automotive Infotainment Power Rail | Industrial Sensor Signal Line |
|---|---|
Use Scenario: Protecting 48 V supply input to head unit MCU and audio amplifier from load dump and jump-start transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between power rail and ground, activated within nanoseconds of overvoltage event. Use Value: Clamps 63 V rail to ≤108 V during 3.65 A surge, preventing latch-up or permanent damage to 5 V/3.3 V LDOs downstream. |
Use Scenario: Shielding RS-485 transceiver I/O pins from ESD and lightning-induced surges in factory automation sensors. IC Role / Device Role / Timing Role: Standoff protector on differential bus lines, absorbing ±30 kV contact discharge before transceiver input stages. Use Value: 227 pF capacitance avoids signal integrity loss at 10 Mbps rates while maintaining >10 kV surge immunity per IEC 61000-4-5. |
| Telecom Line Card Protection | EV Battery Management System |
Use Scenario: Safeguarding DC-DC converter inputs on base station line cards exposed to induced surges from nearby lightning strikes. IC Role / Device Role / Timing Role: Primary surge suppression stage ahead of secondary TVS arrays and filtering components. Use Value: 400 W rating handles multi-pulse 10/1000 μs transients up to 3.65 A without parametric shift or catastrophic failure. |
Use Scenario: Guarding isolated CAN and analog monitoring circuits in BMS modules connected to 400–800 V battery packs. IC Role / Device Role / Timing Role: Secondary protection element after primary fuse and MOV, providing precise clamping near system working voltage. Use Value: Tight ±2 % VBR ensures consistent triggering at 63 V, avoiding false trips during normal pack voltage ripple (±2 V). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ64A-E3/57T | ±5 % VBR tolerance (64 V nominal), 400 W rating, SMA package (DO-214AC), higher RthJA | Larger footprint (4.5 mm × 2.7 mm), less suitable for ultra-thin modules; no AEC-Q101 qualification | Select when cost sensitivity outweighs automotive qualification and board space constraints |
| TPSMD64A | ±5 % VBR (64 V), same 400 W rating, SMC package (DO-214AB), 1.1 mm height | Higher profile (2.6 mm), greater thermal mass but less PCB area efficiency; RoHS-compliant only | Prefer for high-volume industrial designs where reflow compatibility and legacy footprint reuse are priorities |
Compared with VTVS63GSMF-M3-08, SMAJ64A-E3/57T offers lower cost but sacrifices AEC-Q101 validation and precision tolerance, while TPSMD64A provides mechanical robustness at the expense of board real estate and thermal responsiveness in compact layouts.
Availability
VTVS63GSMF-M3-08 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial sensor nodes, and telecom line card designs requiring stable component supply, long-term lifecycle support, and guaranteed traceability.
Supply support for VTVS63GSMF-M3-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The VTVS eSMP® Series delivers precision-transient suppression in ultra-low-profile packages, engineered specifically for next-generation automotive electronics and harsh-environment industrial controls where space, reliability, and regulatory compliance are non-negotiable.
FAQ
What is the exact reverse breakdown voltage range for VTVS63GSMF-M3-08?
The VTVS63GSMF-M3-08 has a reverse breakdown voltage (VBR) range of 73.01 V to 75.99 V at IT = 1 mA and TJ = 25 °C, reflecting its ±2 % tolerance grade. This tight specification ensures consistent clamping behavior across temperature and production batches, making VTVS63GSMF-M3-08 suitable for safety-critical 48 V–60 V systems where overvoltage margins must be tightly controlled.
Is VTVS63GSMF-M3-08 qualified for automotive applications?
Yes, VTVS63GSMF-M3-08 is AEC-Q101 qualified, having passed stress tests including high-temperature operating life (HTOL), temperature cycling (TC), and ESD robustness per JESD22 standards. This qualification confirms VTVS63GSMF-M3-08 meets automotive reliability requirements for under-hood and cabin electronics without requiring additional customer-level qualification.
What is the maximum clamping voltage of VTVS63GSMF-M3-08 under surge conditions?
The maximum reverse clamping voltage (VC) of VTVS63GSMF-M3-08 is 108 V at IPPM = 3.65 A with a 10/1000 μs waveform. This value represents the peak voltage seen by downstream circuitry during worst-case transient events, enabling designers to verify that protected ICs remain within their absolute maximum ratings when VTVS63GSMF-M3-08 is deployed.
Can VTVS63GSMF-M3-08 be used in bidirectional configurations?
No, VTVS63GSMF-M3-08 is a unidirectional TVS diode and must be connected with cathode toward the protected line and anode to ground. For bidirectional protection, two VTVS63GSMF-M3-08 devices in series opposition or a dedicated bidirectional part like VTVS63BGS-M3-08 would be required-VTVS63GSMF-M3-08 itself does not support symmetrical clamping.
What packaging and reel options are available for VTVS63GSMF-M3-08?
VTVS63GSMF-M3-08 is supplied in 3 k per 7″ reel (8 mm tape, MOQ = 30 k) and 10 k per 13″ reel (8 mm tape, MOQ = 50 k). The "M3" suffix denotes lead (Pb)-free, RoHS-compliant, tin-plated terminations, and "-08" indicates the 7″ reel packaging code. Tape orientation follows standard SMF carrier tape with cathode marking aligned per Vishay specification 22670.
VTVS63GSMF-M3-08 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 63V
- Voltage - Breakdown (Min):
- 73.01V
- Voltage - Clamping (Max) @ Ipp:
- 108V
- Current - Peak Pulse (10/1000µs):
- 3.65A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 227pF @ 1MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
VTVS63GSMF-M3-08 FAQ
1.How can I place an order for VTVS63GSMF-M3-08 through Aetrix?
Please submit a Request for Quotation (RFQ) for VTVS63GSMF-M3-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VTVS63GSMF-M3-08 reliable?
The price and inventory of VTVS63GSMF-M3-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS63GSMF-M3-08 is usually 5 days.
3.What payment methods are accepted for VTVS63GSMF-M3-08?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS63GSMF-M3-08 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VTVS63GSMF-M3-08?
VTVS63GSMF-M3-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VTVS63GSMF-M3-08 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VTVS63GSMF-M3-08?
For technical support, including VTVS63GSMF-M3-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS63GSMF-M3-08 requirements.
6.How does Aetrix verify that VTVS63GSMF-M3-08 is sourced from the original manufacturer or authorized distributors?
All VTVS63GSMF-M3-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS63GSMF-M3-08 meets industry standards.
7.What is the process for return or replacement of VTVS63GSMF-M3-08?
All VTVS63GSMF-M3-08 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS63GSMF-M3-08, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VTVS63GSMF-M3-08 part is unused and in its original packaging.
Return procedure for VTVS63GSMF-M3-08:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VTVS63GSMF-M3-08 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
