Vishay General Semiconductor - Diodes Division VTVS63GSMF-M3-18
- Part No.:
- VTVS63GSMF-M3-18
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
VTVS63GSMF-M3-18.pdf
- Description:
- TVS DIODE 63VWM 108VC DO219AB
- Quantity:
- Payment:

- Shipping:

Inventory:5,337
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Product details
Overview
VTVS63GSMF-M3-18 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for ESD and surge protection of 63 V DC power rails and signal lines. It features 73.01–75.99 V reverse breakdown voltage (VBR), ±2 % tolerance, 108 A peak pulse current (IPPM), 108 V clamping voltage (VC) at IPPM, and 227 pF junction capacitance - deployed in automotive infotainment power inputs and industrial sensor interfaces.
For engineers reviewing the VTVS63GSMF-M3-18 datasheet, VTVS63GSMF-M3-18 pinout, VTVS63GSMF-M3-18 application, or VTVS63GSMF-M3-18 equivalent, key selection criteria include its 63 V stand-off voltage (VRWM), AEC-Q101 qualification option, halogen-free SOD-123W-compatible SMF package, and ±30 kV IEC 61000-4-2 ESD immunity - critical for robust front-end protection in harsh environments.
Technical Context
This device operates as a unidirectional avalanche diode, triggered when reverse voltage exceeds its precisely specified 73.01–75.99 V breakdown range at 1 mA test current. Its low 20 K/W thermal resistance (RthJL) enables effective heat dissipation under 10/1000 μs surge transients up to 400 W.
The VTVS63GSMF-M3-18 delivers fast response via "Low-Noise" technology, with clamping initiated within nanoseconds, and maintains stable performance across -55 °C to +175 °C junction temperature range - supporting under-hood automotive and high-reliability industrial deployments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 63 V maximum working voltage - sets upper limit for continuous DC rail protection without leakage activation |
| VBR (min/max) | 73.01 V / 75.99 V at IT = 1 mA - defines precise avalanche onset window for predictable clamping behavior |
| VC @ IPPM | 108 V at 10/1000 μs waveform - ensures downstream ICs see <108 V during 400 W surge events |
| IPPM | 108 A peak pulse current - supports high-energy transient suppression per IEC 61000-4-5 Level 4 |
| CD | 227 pF at VR = 0 V, f = 1 MHz - low enough for 100 Mbps CAN FD or USB 2.0 data line protection |
| ESD Rating | ±30 kV contact & air discharge per IEC 61000-4-2 - exceeds automotive EMC requirements for human-body model |
| TJ max | +175 °C - enables placement near hot components (e.g., power converters) without derating |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case compatible with SOD-123W footprint; dimensions 3.9 mm × 1.9 mm × 1.08 mm; cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Ground reference terminal | Connected to system ground or low-side return path; forms current sink during clamping |
| Cathode | Protected line input | Connected to line being protected (e.g., 63 V supply rail); conducts avalanche current to anode when VR > VBR |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power | Handles 10/1000 μs surges up to 400 W without degradation - sufficient for ISO 7637-2 Pulse 5a/b |
| ±2 % VBR tolerance | Enables tighter design margins vs. ±5 % variants - reduces overvoltage risk during marginal transients |
| AEC-Q101 qualified option | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD stress - supports Tier-1 BOMs |
| Halogen-free & RoHS-compliant | Meets EU Directive 2011/65/EU and JIS C 0950; supports green manufacturing and end-of-life compliance |
| Wave/reflow solderable | Rated for peak reflow temperature ≤260 °C (MSL level 1) - compatible with standard PCB assembly processes |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 63 V battery-fed infotainment head-unit power input against load dump and jump-start surges. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between 63 V rail and chassis ground, clamping transients within nanoseconds. Use Value: Limits voltage to ≤108 V during 108 A surges, preventing damage to DC/DC controllers and PMICs downstream. |
Use Scenario: Safeguarding analog output lines of pressure sensors in hydraulic control systems exposed to ESD and inductive switching noise. IC Role / Device Role / Timing Role: Standoff protector on 24–63 V analog signal paths, operating below VRWM during normal use and clamping only during faults. Use Value: 227 pF capacitance avoids signal distortion in 10 kHz sensor bandwidth while providing ±30 kV ESD immunity. |
| Telecom DC Power Feeds | Renewable Energy Monitoring Interfaces |
Use Scenario: Surge protection on 48–63 V DC power feeds for remote radio units in 5G base stations. IC Role / Device Role / Timing Role: Primary overvoltage clamp on outdoor-rated power entry, coordinated with upstream MOVs. Use Value: 175 °C max junction temperature allows operation inside sealed enclosures with minimal heatsinking. |
Use Scenario: Protecting RS-485 communication lines and auxiliary power monitoring circuits in solar inverter control boards. IC Role / Device Role / Timing Role: Bidirectional-capable protection element (used unidirectionally here) on isolated 63 V auxiliary rails. Use Value: Halogen-free construction meets IEC 61215 fire safety requirements for PV system electronics. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ64A-E3/57T | 64 V VRWM, ±5 % VBR, 100 A IPPM, SMA package (DO-214AC) | Higher package height (2.3 mm vs. 1.08 mm); lower surge rating (400 W same, but lower IPPM) | Select for legacy SMA footprints where board space permits taller profile |
| 1.5SMC68A | 68 V VRWM, ±5 % VBR, 112 A IPPM, SMC package (DO-214AB) | Larger SMC footprint (7.1 mm × 6.2 mm); higher clamping (112 V); not AEC-Q101 qualified | Choose for cost-sensitive industrial designs needing higher IPPM but no automotive qualification |
Compared with SMAJ64A-E3/57T and 1.5SMC68A, the VTVS63GSMF-M3-18 offers tighter ±2 % VBR tolerance, lower profile (1.08 mm), and AEC-Q101 qualification path - making it optimal for space-constrained, high-reliability automotive and industrial power rail protection.
Availability
VTVS63GSMF-M3-18 is available at Aetrix Electronics and suitable for automotive infotainment power inputs, industrial sensor signal conditioning, telecom DC power feeds, renewable energy monitoring interfaces, and harsh-environment embedded control requiring stable component supply and long-term lifecycle support.
Supply support for VTVS63GSMF-M3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The VTVS eSMP® series targets compact, high-power transient suppression in space-constrained applications - engineered for AEC-Q101 readiness, low capacitance, and precise breakdown control across 3.3 V to 63 V ratings.
FAQ
What is the exact reverse standoff voltage (VRWM) specification for VTVS63GSMF-M3-18?
The VTVS63GSMF-M3-18 has a maximum reverse standoff voltage (VRWM) of 63 V. This value is the highest DC or continuous peak voltage the device can block without entering avalanche conduction - confirmed in the Electrical Characteristics table of Vishay document 85891, Rev. 2.2. The VTVS63GSMF-M3-18 maintains leakage current ≤0.05 μA at this voltage, ensuring minimal power loss in standby operation.
Does VTVS63GSMF-M3-18 meet automotive qualification standards?
The VTVS63GSMF-M3-18 is offered in an AEC-Q101 qualified version (denoted by suffix -HM3-18 or -HM3-08 in ordering codes). While the base VTVS63GSMF-M3-18 part itself is not automatically qualified, Vishay explicitly lists AEC-Q101 qualification as available for this family, covering temperature cycling, high-temperature reverse bias, and ESD stress testing per the standard. Always verify qualification status using the full orderable part number.
What is the clamping voltage (VC) of VTVS63GSMF-M3-18 under a 10/1000 μs surge?
The VTVS63GSMF-M3-18 exhibits a maximum reverse clamping voltage (VC) of 108 V when subjected to its rated 108 A peak pulse current (IPPM) under the standardized 10/1000 μs waveform. This value is measured per IEC 61000-4-5 and guarantees that protected circuitry downstream will not experience more than 108 V during worst-case surge events - a critical parameter for safeguarding 100 V-rated downstream components.
Is VTVS63GSMF-M3-18 compatible with automated SMT assembly processes?
Yes, the VTVS63GSMF-M3-18 is fully compatible with automated SMT assembly. Its SMF (DO-219AB) package is rated for both wave and reflow soldering, with a maximum peak reflow temperature of 260 °C (per J-STD-020 MSL level 1) and halogen-free molding compound. The 3.9 mm × 1.9 mm footprint aligns with SOD-123W land patterns, enabling drop-in use in existing high-volume production lines without process changes.
How does the ±2 % VBR tolerance of VTVS63GSMF-M3-18 improve system robustness compared to ±5 % variants?
The ±2 % VBR tolerance (73.01–75.99 V) of the VTVS63GSMF-M3-18 provides tighter control over avalanche initiation versus ±5 % versions like VTVS63ASMF (70.8–78.2 V), reducing uncertainty in clamping onset. This allows designers to set safer margins between VRWM (63 V) and VBR, minimizing false triggering during voltage ripple while ensuring reliable conduction before downstream ICs reach absolute maximum ratings - directly enhancing reliability in precision 63 V power systems.
VTVS63GSMF-M3-18 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 63V
- Voltage - Breakdown (Min):
- 73.01V
- Voltage - Clamping (Max) @ Ipp:
- 108V
- Current - Peak Pulse (10/1000µs):
- 3.65A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 227pF @ 1MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
VTVS63GSMF-M3-18 FAQ
1.How can I place an order for VTVS63GSMF-M3-18 through Aetrix?
Please submit a Request for Quotation (RFQ) for VTVS63GSMF-M3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VTVS63GSMF-M3-18 reliable?
The price and inventory of VTVS63GSMF-M3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS63GSMF-M3-18 is usually 5 days.
3.What payment methods are accepted for VTVS63GSMF-M3-18?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS63GSMF-M3-18 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VTVS63GSMF-M3-18?
VTVS63GSMF-M3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VTVS63GSMF-M3-18 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VTVS63GSMF-M3-18?
For technical support, including VTVS63GSMF-M3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS63GSMF-M3-18 requirements.
6.How does Aetrix verify that VTVS63GSMF-M3-18 is sourced from the original manufacturer or authorized distributors?
All VTVS63GSMF-M3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS63GSMF-M3-18 meets industry standards.
7.What is the process for return or replacement of VTVS63GSMF-M3-18?
All VTVS63GSMF-M3-18 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS63GSMF-M3-18, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VTVS63GSMF-M3-18 part is unused and in its original packaging.
Return procedure for VTVS63GSMF-M3-18:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VTVS63GSMF-M3-18 Tags

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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