Vishay General Semiconductor - Diodes Division VTVS8V5GSMF-M3-18
- Part No.:
- VTVS8V5GSMF-M3-18
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
VTVS8V5GSMF-M3-18.pdf
- Description:
- TVS DIODE 8.5VWM 13.5VC DO219AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
VTVS8V5GSMF-M3-18 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for ESD and surge protection of low-voltage DC lines. It features 9.80 V to 10.20 V reverse breakdown voltage (VBR), 8.50 V maximum stand-off voltage (VRWM), 29.10 A peak pulse current (IPPM), 13.5 V clamping voltage (VC) at IPPM, and ±30 kV IEC 61000-4-2 ESD immunity - deployed in automotive infotainment power rails and USB Type-C port protection.
For engineers reviewing the VTVS8V5GSMF-M3-18 datasheet, VTVS8V5GSMF-M3-18 pinout, VTVS8V5GSMF-M3-18 application, or VTVS8V5GSMF-M3-18 equivalent, key selection criteria include its ±2 % VBR tolerance, 1270 pF typical junction capacitance at 0 V, 175 °C max junction temperature, low-profile SOD-123W-compatible footprint, and AEC-Q101 qualification status for automotive-grade reliability.
Technical Context
This TVS diode operates as a unidirectional clamping device, triggering into avalanche conduction when transient voltage exceeds its 9.80–10.20 V breakdown range. Its low-noise fast-response architecture achieves sub-nanosecond turn-on time, enabling effective suppression of ESD events and 10/1000 μs surges up to 400 W without latch-up or degradation.
The device uses silicon planar junction technology with halogen-free molding compound and is rated for -55 °C to +175 °C operation. Its thermal resistance (RthJL) is 20 K/W when mounted on an infinite heat sink, supporting robust thermal performance in high-density PCB layouts with minimal copper area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 9.80 V / 10.20 V - ensures precise overvoltage threshold activation with ±2 % tolerance for stable protection margin in 8.5 V systems. |
| VRWM | 8.50 V - maximum continuous reverse operating voltage; safely isolates protected line during normal 8.5 V DC operation. |
| IPPM | 29.10 A - peak pulse current handling capability under 10/1000 μs waveform, defining surge energy absorption limit. |
| VC @ IPPM | 13.5 V - clamping voltage during full-rated surge; limits downstream IC stress to safe levels below 15 V logic thresholds. |
| CD @ 0 V | 1270 pF - junction capacitance at zero bias; impacts signal integrity in high-speed interfaces like USB 2.0 or CAN FD. |
| ESD Rating | ±30 kV contact / ±30 kV air per IEC 61000-4-2 - meets highest industrial and automotive ESD immunity requirements. |
| TJ max | +175 °C - enables use in under-hood automotive environments and thermally constrained industrial enclosures. |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case compatible with SOD-123W, SOD-123F, and SOD-123FL footprints. Dimensions: 3.9 mm × 1.9 mm × 1.08 mm (L × W × H). Cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current return path | Connected to ground or low-impedance reference plane; carries full surge current during clamping event. |
| Cathode | Protected line connection | Connected to the line being safeguarded (e.g., USB VBUS); voltage referenced to anode during clamping. |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power | Supports high-energy transients in automotive load-dump and ISO 7637-2 pulse 1/2a scenarios without failure. |
| ±2 % VBR tolerance | Enables tighter design margins than ±5 % variants, reducing risk of false triggering or inadequate protection in 8.5 V systems. |
| Low-noise fast response | Sub-nanosecond turn-on time prevents overshoot propagation to sensitive downstream analog or communication ICs. |
| AEC-Q101 qualified | Validated for automotive applications including infotainment, body control modules, and ADAS sensor interfaces. |
| Halogen-free & RoHS-compliant | Meets automotive OEM environmental standards and supports lead-free reflow soldering up to 260 °C peak temperature. |
Applications
| Automotive Infotainment Power Rail | USB Type-C VBUS Protection |
|---|---|
|
Use Scenario: Protecting 8.5 V supply rail feeding head unit processors and display drivers against load dump and ESD. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between VBUS and chassis ground to shunt transients before reaching PMIC inputs. Use Value: Limits clamped voltage to 13.5 V, staying below 15 V absolute maximum rating of common automotive PMICs while surviving 29.1 A surges. |
Use Scenario: Safeguarding USB Type-C receptacle VBUS line against hot-plug ESD and cable-induced surges. IC Role / Device Role / Timing Role: Standoff-rated TVS connected cathode-to-VBUS and anode-to-ground, activated only during overvoltage events. Use Value: 1270 pF capacitance avoids USB 2.0 signal integrity degradation; ±30 kV ESD rating exceeds USB-IF compliance requirements. |
| Industrial PLC Digital I/O Port | Automotive Body Control Module (BCM) |
|
Use Scenario: Shielding 24 V digital input channels from inductive switching transients and field wiring ESD. IC Role / Device Role / Timing Role: Primary front-end protection element on each channel, positioned before series current-limiting resistor and optocoupler. Use Value: 175 °C max junction temperature allows operation in sealed enclosures with ambient temperatures up to 105 °C. |
Use Scenario: Protecting LIN bus power supply and sensor interface lines in door module electronics. IC Role / Device Role / Timing Role: Low-capacitance TVS integrated into compact BCM PCB layout to meet AEC-Q101 and ISO 16750-2 requirements. Use Value: DO-219AB package enables automated placement and reflow compatibility with SOD-123W tooling, reducing manufacturing cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ8.5A | ±5 % VBR (8.08–8.92 V), 13.6 V VC, 28.7 A IPPM, SMA package (larger footprint) | Higher VC and looser VBR tolerance reduce protection margin in precision 8.5 V systems. | Select when cost sensitivity outweighs tight VBR control and board space permits SMA footprint. |
| TPSMD8.5A | ±5 % VBR (8.08–8.92 V), 13.4 V VC, 29.4 A IPPM, SMC package (3.9 × 2.5 mm) | Higher capacitance (1400 pF) and larger package may impact high-speed signal routing and PCB density. | Prefer where higher IPPM margin is prioritized and layout accommodates wider SMC outline. |
Compared with SMAJ8.5A and TPSMD8.5A, VTVS8V5GSMF-M3-18 delivers tighter ±2 % VBR control, lower 1270 pF capacitance, and smaller DO-219AB footprint - making it optimal for space-constrained automotive and USB applications requiring precise clamping and high ESD robustness.
Availability
VTVS8V5GSMF-M3-18 is available at Aetrix Electronics and suitable for automotive infotainment systems, USB Type-C power delivery circuits, and industrial PLC I/O modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for VTVS8V5GSMF-M3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The VTVS eSMP® Series targets high-speed, high-reliability transient suppression in space-constrained automotive and industrial electronics, with emphasis on AEC-Q101 qualification, low capacitance, and precise VBR control.
FAQ
What is the exact reverse breakdown voltage range for VTVS8V5GSMF-M3-18?
The VTVS8V5GSMF-M3-18 has a guaranteed reverse breakdown voltage (VBR) range of 9.80 V to 10.20 V at IT = 1 mA and TJ = 25 °C, reflecting its ±2 % tolerance grade. This tight specification ensures reliable triggering just above the 8.5 V stand-off voltage, minimizing false trips while maintaining adequate protection margin for 8.5 V nominal systems. The VTVS8V5GSMF-M3-18 datasheet confirms this range in Table 1 under "Electrical Characteristics".
Is VTVS8V5GSMF-M3-18 qualified for automotive applications?
Yes, VTVS8V5GSMF-M3-18 is AEC-Q101 qualified, meaning it has passed stress tests for temperature cycling, humidity, mechanical shock, and high-temperature operating life required for automotive electronic components. It supports operation from -55 °C to +175 °C and is commonly used in automotive infotainment, body control modules, and sensor interfaces. The VTVS8V5GSMF-M3-18 product family documentation explicitly lists AEC-Q101 qualification in the Ordering Information section.
What is the clamping voltage of VTVS8V5GSMF-M3-18 under full-rated surge conditions?
The VTVS8V5GSMF-M3-18 exhibits a maximum reverse clamping voltage (VC) of 13.5 V at its rated peak pulse current (IPPM) of 29.10 A, tested with a 10/1000 μs waveform. This value defines the upper voltage limit imposed on the protected line during worst-case surge events, ensuring downstream ICs remain within their absolute maximum ratings. The VTVS8V5GSMF-M3-18 datasheet specifies this parameter in the Electrical Characteristics table.
Does VTVS8V5GSMF-M3-18 support lead-free reflow soldering?
Yes, VTVS8V5GSMF-M3-18 is fully compatible with lead-free reflow soldering processes, with a peak temperature rating of up to 260 °C per J-STD-020 MSL level 1 guidelines. Its halogen-free molding compound and tin-plated terminations meet RoHS and JEDEC standards. The VTVS8V5GSMF-M3-18 package data sheet confirms wave and reflow solderability as a core feature.
What is the junction capacitance of VTVS8V5GSMF-M3-18 at zero bias?
The VTVS8V5GSMF-M3-18 has a typical junction capacitance (CD) of 1270 pF measured at VR = 0 V and f = 1 MHz. This value directly affects high-frequency signal integrity in protected interfaces such as USB 2.0 or LIN bus lines. Because capacitance decreases with increasing reverse bias, actual dynamic capacitance during normal 8.5 V operation is significantly lower - a key factor confirmed in the VTVS8V5GSMF-M3-18 Typical Characteristics curves.
VTVS8V5GSMF-M3-18 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.8V
- Voltage - Clamping (Max) @ Ipp:
- 13.5V
- Current - Peak Pulse (10/1000µs):
- 29.1A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 1270pF @ 1MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
VTVS8V5GSMF-M3-18 FAQ
1.How can I place an order for VTVS8V5GSMF-M3-18 through Aetrix?
Please submit a Request for Quotation (RFQ) for VTVS8V5GSMF-M3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VTVS8V5GSMF-M3-18 reliable?
The price and inventory of VTVS8V5GSMF-M3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS8V5GSMF-M3-18 is usually 5 days.
3.What payment methods are accepted for VTVS8V5GSMF-M3-18?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS8V5GSMF-M3-18 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VTVS8V5GSMF-M3-18?
VTVS8V5GSMF-M3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VTVS8V5GSMF-M3-18 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VTVS8V5GSMF-M3-18?
For technical support, including VTVS8V5GSMF-M3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS8V5GSMF-M3-18 requirements.
6.How does Aetrix verify that VTVS8V5GSMF-M3-18 is sourced from the original manufacturer or authorized distributors?
All VTVS8V5GSMF-M3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS8V5GSMF-M3-18 meets industry standards.
7.What is the process for return or replacement of VTVS8V5GSMF-M3-18?
All VTVS8V5GSMF-M3-18 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS8V5GSMF-M3-18, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VTVS8V5GSMF-M3-18 part is unused and in its original packaging.
Return procedure for VTVS8V5GSMF-M3-18:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VTVS8V5GSMF-M3-18 Tags

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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