Diodes Incorporated ZABG6003JA16TC

Overview

ZABG6003JA16TC from Diodes Incorporated is a 6-stage GaAs/HEMT FET bias controller for satellite LNBs, operating from 2.1V–5.5V supply, delivering regulated −2V gate bias and 2.0V drain voltage per stage, with programmable 4–15mA drain current for two stages (D1/D4) and fixed 10mA for four stages (D2/D3/D5/D6), used in twin/quad digital LNB front-ends.

For engineers reviewing the ZABG6003JA16TC datasheet, ZABG6003JA16TC pinout, ZABG6003JA16TC application, or ZABG6003JA16TC equivalent, key selection criteria include negative rail generation capability, dual-programmable vs. quad-fixed drain current configuration, ultra-low 1.1mA quiescent current, −40°C to +105°C operation, and U-QFN3030-16 (Type B) package compatibility.

Technical Context

The ZABG6003 integrates a switched-capacitor DC-DC converter generating a regulated −2.0V output (±0.5V) from a single 2.1–5.5V input, requiring only one external 47nF capacitor (CSUB). It implements six independent bias channels with per-stage current limiting and gate drive clamping to −2.5V max.

Drain regulation uses closed-loop current sensing: RCAL1 sets D1/D4 current (4–15mA); D2/D3/D5/D6 are internally trimmed to 10mA ±1mA. Drain voltage is stabilized at 2.0V ±0.2V across temperature (±150ppm/°C drift) and supply variation (0.075%/V dVD/dVDD).

Key Specifications

Pinout & Package

U-QFN3030-16 (Type B) surface-mount package: 3.0mm × 3.0mm body, 0.4mm pitch, exposed thermal pad (Gnd flag), RoHS-compliant, halogen-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar FET bias controller applications.

Compared with MAX2641 and LMX2594, the ZABG6003JA16TC uniquely integrates six-channel drain regulation, programmable dual-stage current setting, and on-chip −2V generation-enabling full LNB front-end biasing with minimal external components, whereas alternatives require supplemental circuitry or serve unrelated signal-generation functions.

Availability

ZABG6003JA16TC is available at Aetrix Electronics and suitable for satellite LNB design, twin/quad antenna systems, and IP-based satellite gateways requiring stable component supply, long-lifecycle support, and guaranteed RoHS/halogen-free compliance.

Supply support for ZABG6003JA16TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and precision timing solutions for industrial, automotive, and communications markets.

The ZABG series targets satellite receiver LNBs, delivering integrated FET bias control with minimal external components to reduce size, cost, and design complexity in space-constrained outdoor RF modules.

FAQ

What is the minimum external component count required to operate the ZABG6003JA16TC?

The ZABG6003JA16TC requires only two external components for full six-stage operation: a 47nF capacitor on CSUB for the integrated −2V generator, and a single resistor on RCAL1 to set D1/D4 drain current. Unused stages (e.g., D2/G2) may be left unconnected without impact.

Can the ZABG6003JA16TC drive depletion-mode FETs in common-gate configuration?

No-the ZABG6003JA16TC is designed exclusively for grounded-source (common-source) FET topologies. Its gate drivers provide negative-voltage referenced outputs (−2.0V) and clamp at −2.5V, which align with depletion-mode FET gate requirements only when the source is tied to ground.

How does the ZABG6003JA16TC protect external FETs during power-up transients?

It enforces strict gate voltage limits (−2.5V maximum) and per-stage current limiting on all six drain outputs. During power-up, the internal oscillator and regulator ramp synchronously, preventing gate overvoltage or uncontrolled current surges that could damage GaAs/HEMT FETs.

Is the −2V output on CSUB capable of powering external circuitry beyond gate biasing?

Yes-the CSUB pin delivers up to −20µA of regulated −2.0V output, sufficient to bias additional discrete components such as mixer diodes, LO buffer transistors, or auxiliary bias networks, provided total load current remains within specification.