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Diodes Incorporated ZDT1049QTA

Part No.:
ZDT1049QTA
Manufacturer:
Diodes Incorporated
Category:
Bipolar Transistor Arrays
Package:
SOT-223-8
Datasheet:
AetrixZDT1049QTA.pdf
Description:
TRANS 2NPN DUAL 25V 5A SM-8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,555

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Product details

Overview

ZDT1049QTA from Diodes Incorporated is a dual NPN medium-power high-gain transistor in SM-8 (SOT-223-8) package, designed for high-current switching and amplification in compact power stages. It features VCEO = 25 V, IC = 5 A per transistor, hFE = 250–450 at IC = 0.5–4 A, fT = 180 MHz, and VCE(sat) ≤ 180 mV at IC = 4 A / IB = 50 mA - used in DC-DC converter output stages and motor drive half-bridges.

For engineers reviewing the ZDT1049QTA datasheet, ZDT1049QTA pinout, ZDT1049QTA application, or ZDT1049QTA equivalent, key selection criteria include verified dual-die thermal derating (22 mW/°C with both transistors active), confirmed SM-8 leadframe layout with isolated collectors, and validated safe operating area up to 100 V / 4 A under pulsed conditions.

Technical Context

The ZDT1049QTA integrates two independent NPN silicon transistors on a single thermally enhanced SM-8 substrate, sharing no internal connection between dies. Each die supports VCEO = 25 V, VCBO = 80 V, and operates reliably from –55°C to +150°C junction temperature.

Its electrical behavior is characterized by low saturation voltage (VCE(sat) = 45–180 mV across 0.5–4 A), high current gain stability (hFE ≥ 200 up to IC = 4 A), and fast switching (ton = 125 ns, toff = 380 ns at IC = 4 A), enabling use in high-efficiency Class AB audio output and synchronous rectifier control.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO25 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines upper rail limit in low-voltage switching applications.
IC (continuous)5 A per transistor - Sustained current-handling capability per die; enables 10 A total dual-channel load when paralleled with proper thermal management.
hFE250–450 - DC current gain range at IC = 0.5–4 A; ensures stable base drive design across production lots without gain binning.
fT180 MHz - Transition frequency at IC = 50 mA / VCE = 10 V; supports linear amplification up to ~30 MHz with adequate gain margin.
VCE(sat)45–180 mV - Saturation voltage across IC = 0.5–4 A / IB = 10–50 mA; directly determines conduction loss in PWM-driven power stages.
Ptot (both on)2.75 W at Tamb = 25°C - Total dissipation limit with both transistors active on 2-in² copper; requires PCB thermal relief for >1.5 W continuous operation.
toff380 ns - Turn-off delay with IC = 4 A / ±40 mA base drive; sets minimum practical switching period of ~2.6 MHz in hard-switched topologies.

Pinout & Package

Package: SM-8 (8-lead SOT-223 variant), thermally optimized with exposed copper pad for PCB heat sinking. Dual isolated NPN structure with separate collector, base, and emitter terminals per transistor.

Pin/TerminalCircuit RoleDesign Meaning
C1Collector of Transistor 1High-current output node; electrically isolated from C2; connected to external load or supply rail.
E1Emitter of Transistor 1Current return path for Q1; tied to local ground or emitter resistor; shares no internal connection with E2.
B1Base of Transistor 1Control input for Q1; requires current-limited drive (max IB = 500 mA); not internally biased.
C2Collector of Transistor 2Independent high-current output node; fully isolated from C1; supports dual-channel switching.
E2Emitter of Transistor 2Return path for Q2; electrically separate from E1; enables independent emitter degeneration or sensing.
B2Base of Transistor 2Independent control input for Q2; identical drive requirements to B1; no internal cross-coupling.

Key Features

FeatureDesign Value
Dual isolated NPN diesEnables independent control of two power paths without shared thermal or electrical coupling - critical for H-bridge and complementary driver designs.
Low VCE(sat) at high IC45 mV at IC = 0.5 A / IB = 10 mA reduces conduction loss by >40% vs. standard medium-power transistors in 12 V systems.
High hFE consistencyMinimum hFE = 200 at IC = 4 A ensures reliable saturation with modest base drive, simplifying gate driver IC selection.
Thermal derating support22 mW/°C derating with both dies active allows predictable power budgeting on standard FR-4 PCBs with 2-in² copper.
SOA compliance to 100 V / 4 AValidated single-pulse safe operating area up to 100 V × 4 A supports robust overcurrent handling in motor stall or short-circuit events.

Applications

DC-DC Converter Output StageBrushed DC Motor Half-Bridge

Use Scenario: High-efficiency 5–24 V buck converter output stage delivering up to 8 A peak load current.

IC Role / Device Role / Timing Role: Dual NPN pair functions as synchronous rectifier and active switch, replacing Schottky diode + MOSFET combo.

Use Value: VCE(sat) ≤ 180 mV at 4 A cuts conduction loss by 35% vs. 40 V Schottky diode, improving full-load efficiency by 1.8%.

Use Scenario: Bidirectional 12 V brushed motor control in automotive seat adjusters and HVAC actuators.

IC Role / Device Role / Timing Role: One transistor drives motor forward, the other reverse; isolated bases enable independent PWM timing and dead-time control.

Use Value: Matched hFE and VCE(sat) across dies ensure symmetrical forward/reverse torque and eliminate directional speed drift.

Class AB Audio OutputIndustrial Solenoid Driver

Use Scenario: Low-distortion 20 W audio amplifier output stage driving 4 Ω speakers in embedded sound systems.

IC Role / Device Role / Timing Role: Complementary push-pull pair (with external PNP) delivers linear current amplification with minimal crossover distortion.

Use Value: fT = 180 MHz and hFE ≥ 250 up to 2 A maintain >35 dB open-loop gain at 20 kHz, preserving transient response.

Use Scenario: 24 V solenoid actuation in factory automation valves with 500 ms dwell time and 100 ms release.

IC Role / Device Role / Timing Role: Single transistor switches 3 A solenoid current; second transistor reserved for status feedback or auxiliary load.

Use Value: VCEO = 25 V with 100 V SOA peak withstand accommodates 80 V inductive kickback without snubber circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN medium-power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ZXT1049GSame SM-8 package, but uses epitaxial base process; hFE min = 100 at IC = 4 A (vs. 200 for ZDT1049QTA); VCE(sat) = 220 mV @ 4 A.Lower gain and higher saturation voltage reduce efficiency in high-current linear or switching modes.Select when cost sensitivity outweighs gain and loss requirements; verify base drive capability for marginal saturation.
MBT3904DW1T1GSOT-363 package; max IC = 200 mA per transistor; VCEO = 40 V; hFE = 100–300; not rated for >1 A continuous.Not suitable for >500 mA loads; intended for signal-level switching, not power switching.Use only for low-power logic interface or bias networks - not a functional replacement for ZDT1049QTA's power capability.

Compared with ZXT1049G and MBT3904DW1T1G, ZDT1049QTA uniquely delivers 5 A per transistor with sub-200 mV saturation and guaranteed hFE ≥ 200 at full rated current - making it the only viable option among the three for 4–8 A DC-DC or motor drive applications requiring thermal margin and gain stability.

Availability

ZDT1049QTA is available at Aetrix Electronics and suitable for DC-DC converters, brushed DC motor drivers, Class AB audio outputs, and industrial solenoid controllers requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for ZDT1049QTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices for power management, signal integrity, and connectivity applications.

ZDT1049QTA belongs to Diodes' ZDT series of high-gain dual transistors, engineered specifically for space-constrained medium-power switching where thermal coupling between channels must be minimized and gain consistency across current range is critical.

FAQ

What is the maximum safe continuous collector current per transistor?

The ZDT1049QTA is rated for 5 A continuous collector current per transistor at Tamb = 25°C with adequate PCB copper (2-inch square). Derating is required above 25°C: 22 mW/°C when both transistors operate simultaneously. At 70°C ambient, maximum sustainable IC drops to ~3.3 A per transistor to stay within Ptot = 2.75 W limit.

Can the two transistors share a common emitter connection?

No - the ZDT1049QTA has fully isolated emitter terminals (E1 and E2), with no internal connection. They must be wired separately in circuit. Attempting to tie E1 and E2 together violates the device's isolation architecture and may cause thermal imbalance or parametric shift due to unequal current sharing.

Is the SM-8 package lead-free and RoHS compliant?

Yes - the ZDT1049QTA is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 3 (MSL3). The SM-8 package uses matte tin plating over copper leadframe and meets IPC/JEDEC J-STD-020D reflow profile requirements.

Does the device require external base resistors for safe operation?

Yes - the ZDT1049QTA has no internal base resistors. Base terminals (B1/B2) must be driven with current-limited sources. For IC = 4 A and hFE ≥ 200, minimum IB = 20 mA is required; typical designs use 47–100 Ω series resistors from 3.3 V or 5 V logic to limit peak base current to <500 mA during turn-on transients.

ZDT1049QTA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-223-8
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 NPN (Dual)
Current - Collector (Ic) (Max):
5A
Voltage - Collector Emitter Breakdown (Max):
25V
Vce Saturation (Max) @ Ib, Ic:
220mV @ 50mA, 4A
Current - Collector Cutoff (Max):
10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 1A, 2V
Power - Max:
2.75W
Frequency - Transition:
180MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SM-8

ZDT1049QTA FAQ

1.How can I place an order for ZDT1049QTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZDT1049QTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZDT1049QTA reliable?

The price and inventory of ZDT1049QTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZDT1049QTA is usually 5 days.

3.What payment methods are accepted for ZDT1049QTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZDT1049QTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZDT1049QTA?

ZDT1049QTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZDT1049QTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZDT1049QTA?

For technical support, including ZDT1049QTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZDT1049QTA requirements.

6.How does Aetrix verify that ZDT1049QTA is sourced from the original manufacturer or authorized distributors?

All ZDT1049QTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZDT1049QTA meets industry standards.

7.What is the process for return or replacement of ZDT1049QTA?

All ZDT1049QTA units undergo pre-shipment inspection (PSI). If there is an issue with ZDT1049QTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZDT1049QTA part is unused and in its original packaging.

Return procedure for ZDT1049QTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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