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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Diodes Incorporated ZDT1049TA

Name: ZDT1049TA
Brand: Diodes Incorporated
SKU: ZDT1049TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZDT1049TA

Manufacturer:: Diodes Incorporated

Category:: Bipolar Transistor Arrays

Package:: SOT-223-8

Datasheet:: ZDT1049TA.pdf

Description:: TRANS 2NPN DUAL 25V 5A SM8

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ZDT1049TA from Diodes Incorporated is a dual NPN medium-power high-gain transistor in SM-8 (SOT-223-8) package, rated for V_CEO = 25 V, I_C = 5 A per die, and h_FE ≥ 250 at I_C = 10 mA. It supports parallel switching in DC-DC converters and motor drive half-bridges where matched gain and thermal coupling are critical.

For engineers reviewing the ZDT1049TA datasheet, ZDT1049TA pinout, ZDT1049TA application, or ZDT1049TA equivalent, key selection factors include dual-die thermal resistance (45.5 °C/W with both dies active), V_CE(sat) ≤ 125 mV at I_C = 2 A / I_B = 10 mA, and f_T = 180 MHz - all verified under pulsed conditions per Issue 1 (Jan 1996) specification.

Technical Context

The ZDT1049TA integrates two electrically isolated NPN transistors on a single thermally coupled die substrate within an SM-8 leadframe. Each transistor shares identical absolute maximum ratings (V_CEO = 25 V, I_C = 5 A) and exhibits tightly matched h_FE across operating currents (250–450 at I_C = 10 mA to 4 A).

Its safe operating area (SOA) is characterized up to 100 A peak pulse (100 µs), with derated power dissipation (2.75 W with both dies active) and thermal resistance (45.5 °C/W) defined for 2-inch² PCB copper. Turn-on/off times (125 ns / 380 ns) are measured at I_C = 4 A with ±40 mA base drive.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	25 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines upper rail limit in low-voltage switching stages.
I_C (continuous)	5 A per transistor - Sustained current handling per die; enables 10 A total dual-channel output with shared thermal path.
h_FE	250–450 - DC current gain range across 10 mA–4 A; ensures stable base drive sizing without gain-dependent saturation shift.
V_CE(sat)	125 mV @ I_C=2 A, I_B=10 mA - Low conduction loss per transistor; reduces heat generation in 24 V motor control H-bridge legs.
f_T	180 MHz - Transition frequency at I_C=50 mA, V_CE=10 V; supports PWM operation up to ~10 MHz with gain margin.
θ_JA (both on)	45.5 °C/W - Junction-to-ambient thermal resistance with both transistors active on 2-inch² copper; determines heatsink requirement for 2.75 W total dissipation.

Pinout & Package

Package: SM-8 (8-lead SOT-223 variant), surface-mount, thermally enhanced with exposed die pad. Dual NPN structure with electrically isolated collectors, bases, and emitters.

Pin/Terminal	Circuit Role	Design Meaning
C1	Collector of Transistor 1	Primary high-current output node; internally connected to leadframe pad for thermal conduction.
E1	Emitter of Transistor 1	Current return path for Q1; tied to ground or low-side switch node in half-bridge topology.
B1	Base of Transistor 1	Control input for Q1; requires current-limited drive (max I_B = 500 mA) to avoid saturation delay.
C2	Collector of Transistor 2	Independent high-current output node; electrically isolated but thermally coupled to C1.
E2	Emitter of Transistor 2	Current return path for Q2; enables independent emitter referencing or shared emitter configuration.
B2	Base of Transistor 2	Control input for Q2; matched gain and timing characteristics ensure synchronized switching with Q1.

Key Features

Feature	Design Value
Dual NPN monolithic die	Two matched transistors on single substrate - enables precise current sharing and thermal tracking in paralleled outputs.
High h_FE consistency	h_FE ≥ 250 at I_C = 10 mA and ≥ 350 at I_C = 4 A - reduces base drive power and improves efficiency in high-current linear/switching modes.
Low V_CE(sat)	≤ 125 mV at I_C = 2 A / I_B = 10 mA - minimizes conduction loss in battery-powered 24 V motor drivers and solenoid controllers.
Fast switching	t_on = 125 ns, t_off = 380 ns at I_C = 4 A - supports >100 kHz PWM in DC-DC synchronous rectifiers without excessive switching loss.
Robust SOA	Rated for 100 A single-pulse (100 µs) at T_j = 25°C - withstands inrush currents in industrial relay driver and UPS inverter applications.

Applications

DC-DC Converter Power Stage

Brushed DC Motor Half-Bridge

Use Scenario: High-efficiency 12–24 V buck converter output stage using complementary NPN/PNP or dual-NPN synchronous rectification.

IC Role / Device Role / Timing Role: Dual NPN switch pair driving low-side and high-side paths with matched gain and thermal response.

Use Value: 125 mV V_CE(sat) at 2 A reduces conduction loss by >30% vs. discrete TO-220 transistors; 45.5 °C/W θ_JA enables compact layout without external heatsink.

Use Scenario: Bidirectional 24 V brushed motor control in automated gate actuators and HVAC dampers.

IC Role / Device Role / Timing Role: Dual NPN configured as high-side and low-side switches in H-bridge leg, sharing thermal mass for balanced junction temperature.

Use Value: Matched h_FE (250–450) ensures equal current split during direction reversal; 380 ns t_off limits shoot-through risk during PWM dead-time transitions.

Solenoid Driver Module

Industrial Relay Interface

Use Scenario: 24 V solenoid actuation in fluid control valves with fast turn-on/turn-off requirements.

IC Role / Device Role / Timing Role: Dual NPN used in parallel to drive 5 A solenoid coils with redundant current paths and thermal redundancy.

Use Value: 20 A I_CM peak rating handles 5× inrush current; 125 ns t_on achieves <1 ms valve response time under microcontroller PWM control.

Use Scenario: PLC output module driving 10 A industrial relays with isolation and overcurrent protection.

IC Role / Device Role / Timing Role: Dual NPN configured as current-amplified Darlington pair or independent relay drivers with shared base drive logic.

Use Value: 5 A continuous per die supports 10 A relay coil load; -55°C to +150°C T_j rating ensures reliability in uncooled control cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN medium-power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZXT1049DFTA	Same SM-8 package, higher V_CEO = 30 V, lower h_FE (100–300), 150 mV V_CE(sat) @ 2 A.	Preferred for 28 V automotive systems requiring higher breakdown margin; less suitable for low-loss 24 V industrial drives.	Select when V_CEO > 25 V is mandatory and gain consistency is secondary.
DMT3020LSD	Single NPN in LFPAK56, V_CEO = 30 V, I_C = 10 A, 110 mV V_CE(sat), but no dual-die thermal coupling.	Used where space-constrained PCBs require single-device footprint; lacks matched timing/gain between channels.	Choose for ultra-compact layouts where dual-transistor matching is not required.

Compared with ZXT1049DFTA and DMT3020LSD, the ZDT1049TA uniquely delivers matched dual-NPN gain (h_FE ≥ 250), lowest V_CE(sat) (125 mV), and integrated thermal coupling - making it optimal for precision current-sharing and synchronized switching in industrial motor and power conversion modules.

Availability

ZDT1049TA is available at Aetrix Electronics and suitable for DC-DC converter power stages, brushed DC motor half-bridges, and solenoid driver modules requiring stable component supply and long-term industrial lifecycle support.

Supply support for ZDT1049TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for industrial, computing, and consumer markets.

The ZDT1049TA belongs to Diodes' high-reliability bipolar transistor product line, designed specifically for medium-power switching applications demanding matched dual-die performance, wide temperature operation (-55°C to +150°C), and robust SOA in compact surface-mount packages.

FAQ

What is the maximum continuous collector current per transistor in the ZDT1049TA?

The ZDT1049TA is rated for 5 A continuous collector current per transistor (I_C) at T_amb = 25°C with proper PCB copper area (2-inch²). This rating assumes both transistors operate simultaneously, with total power dissipation limited to 2.75 W and thermal resistance of 45.5 °C/W. Derating is required above 25°C ambient.

Can the ZDT1049TA be used in linear amplifier applications?

Yes - its h_FE range (250–450) and low V_CE(sat) support Class AB linear amplification up to ~1 W per channel. However, the device is optimized for switching use; linear operation requires strict thermal management due to limited SOA in the linear region and absence of Safe Operating Area curves beyond pulsed conditions.

Is the ZDT1049TA pin-compatible with the ZXT1049DFTA?

Yes - both devices use the SM-8 (SOT-223-8) package with identical pinout: C1, E1, B1, C2, E2, B2, plus two thermal pads. Mechanical and solder footprint compatibility is confirmed; however, electrical differences (V_CEO, h_FE, V_CE(sat)) require circuit validation before substitution.

What is the meaning of "IC/IB = 10" shown in the h_FE graph on page 3-361?

"IC/IB = 10" indicates the base current was set to 10% of the collector current during h_FE measurement - i.e., forced beta = 10. This reflects a saturated switching condition, distinct from the linear-region h_FE values (e.g., IC = 10 mA, V_CE = 2 V) listed in the Electrical Characteristics table, which define forward current transfer ratio under active-mode bias.

ZDT1049TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-223-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 2 NPN (Dual)

Current - Collector (Ic) (Max):: 5A

Voltage - Collector Emitter Breakdown (Max):: 25V

Vce Saturation (Max) @ Ib, Ic:: 220mV @ 50mA, 4A

Current - Collector Cutoff (Max):: 10nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 1A, 2V

Power - Max:: 2.75W

Frequency - Transition:: 180MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SM8

ZDT1049TA FAQ

1.How can I place an order for ZDT1049TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZDT1049TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZDT1049TA reliable?

The price and inventory of ZDT1049TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZDT1049TA is usually 5 days.

3.What payment methods are accepted for ZDT1049TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZDT1049TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZDT1049TA?

ZDT1049TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZDT1049TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZDT1049TA?

For technical support, including ZDT1049TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZDT1049TA requirements.

6.How does Aetrix verify that ZDT1049TA is sourced from the original manufacturer or authorized distributors?

All ZDT1049TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZDT1049TA meets industry standards.

7.What is the process for return or replacement of ZDT1049TA?

All ZDT1049TA units undergo pre-shipment inspection (PSI). If there is an issue with ZDT1049TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZDT1049TA part is unused and in its original packaging.

Return procedure for ZDT1049TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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