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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Diodes Incorporated ZDT1147TC

Name: ZDT1147TC
Brand: Diodes Incorporated
SKU: ZDT1147TC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZDT1147TC

Manufacturer:: Diodes Incorporated

Category:: Bipolar Transistor Arrays

Package:: SOT-223-8

Datasheet:: ZDT1147TC.pdf

Description:: TRANS 2PNP DUAL 12V 5A SM-8

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ZDT1147TC from Diodes Incorporated is a dual NPN medium-power Darlington transistor in SM-8 (SOT-223-8) package, rated for V_CEO = 120 V, I_C = 1 A per die, and P_tot = 2.75 W with both dies active. It delivers h_FE ≥ 2000 at I_C = 50 mA and supports fast switching with t_on = 0.5 µs and t_off = 1.6 µs under pulsed conditions, used in industrial relay drivers and DC motor control stages.

For engineers reviewing the ZDT1147TC datasheet, ZDT1147TC pinout, ZDT1147TC application, or ZDT1147TC equivalent, key selection criteria include verified dual-die thermal derating (22 mW/°C), guaranteed V_CE(sat) ≤ 1.5 V at I_C = 1 A / I_B = 1 mA, and confirmed SM-8 terminal mapping supporting independent base-emitter control per channel.

Technical Context

This device integrates two discrete NPN Darlington pairs in a single SM-8 thermally enhanced package, each with internal base-emitter resistors omitted-requiring external base drive. Its V_CEO(SUS) = 120 V and V_CBO = 140 V support operation in 100 V rail systems with margin, while f_T = 150 MHz enables stable gain at audio and low-frequency switching speeds.

The dual-die architecture allows parallel operation or independent channel use, with thermal resistance θ_JA = 45.5 °C/W when both dies are active on a 2-inch² PCB copper area. C_ibo = 90 pF and C_obo = 15 pF confirm low capacitive loading for driver-stage isolation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	120 V - Sustains 120 V collector-emitter voltage before breakdown, enabling use in 100 V DC bus applications with safety margin.
I_C (per die)	1 A continuous - Supports 1 A steady-state load current per channel without forced cooling on standard PCB layout.
V_CE(sat)	1.5 V max at I_C = 1 A, I_B = 1 mA - Limits conduction loss to ≤1.5 W per channel under full load, critical for thermal budgeting.
h_FE	≥2000 at I_C = 50 mA - Delivers high current gain, reducing required base drive current and easing microcontroller GPIO interface.
f_T	150 MHz - Ensures adequate small-signal bandwidth for clean switching up to ~10–20 kHz PWM frequencies.
θ_JA (both dies)	45.5 °C/W - Defines junction-to-ambient thermal path with standard 2-inch² copper; enables accurate junction temperature prediction.
t_off	1.6 µs typical - Specifies turn-off delay under defined pulsed test conditions (I_C = 0.5 A, V_CE = 10 V), relevant for snubberless switching design.

Pinout & Package

Package: SM-8 (8-lead SOT-223 variant), thermally optimized with exposed die-pad for PCB heat sinking. Pin numbering follows standard Diodes Incorporated SM-8 outline (pin 1 = C1, pin 2 = B1, pin 3 = E1, pin 4 = C2, pin 5 = B2, pin 6 = E2, pins 7–8 = common thermal pad).

Pin/Terminal	Circuit Role	Design Meaning
1 (C1)	Collector of first Darlington pair	High-current output node for Channel 1; electrically isolated from C2 but shares thermal pad.
2 (B1)	Base of first Darlington pair	Direct base input requiring external current-limiting resistor; no internal bias network.
3 (E1)	Emitter of first Darlington pair	Return path for Channel 1; not internally tied to E2 - supports independent emitter referencing.
4 (C2)	Collector of second Darlington pair	Independent high-current output for Channel 2; same voltage rating and thermal coupling as C1.
5 (B2)	Base of second Darlington pair	Separate base control node; enables asynchronous or complementary drive of dual channels.
6 (E2)	Emitter of second Darlington pair	Independent emitter return; allows floating or differential emitter configurations per channel.
7–8 (Pad)	Thermal pad / mechanical ground	Must be soldered to ≥2-inch² copper pour for specified θ_JA; not electrically connected to any die.

Key Features

Feature	Design Value
Dual independent Darlington channels	Enables two separate high-gain, medium-power switching paths in one footprint-reducing board space vs. discrete dual-SOT-23 solutions.
V_CEO(SUS) = 120 V	Supports reliable operation in 100 V industrial DC systems (e.g., PLC I/O modules) without external snubbers or clamping.
h_FE ≥ 2000 @ 50 mA	Reduces required base drive current to <50 µA for 100 mA load, easing direct MCU GPIO control without buffer stages.
Low C_obo = 15 pF	Minimizes Miller-effect feedback during switching, improving stability in inductive load driving (e.g., solenoids, relays).
SM-8 thermal pad	Provides 45.5 °C/W θ_JA with standard layout-enabling 1 A/channel operation without heatsink in ambient ≤60°C.

Applications

Industrial Relay Drivers

DC Motor Speed Control

Use Scenario: Driving 24–48 V DC coil relays in programmable logic controller (PLC) output modules with 100 ms switching cycles.

IC Role / Device Role / Timing Role: High-gain Darlington switch providing galvanically isolated coil current amplification with minimal MCU GPIO loading.

Use Value: Eliminates need for external base resistors or buffer transistors; V_CE(sat) ≤ 1.5 V ensures <1.5 W dissipation per channel at 1 A, maintaining safe junction temperature.

Use Scenario: Controlling bidirectional brushed DC motors (up to 36 V, 1 A) in automated gate actuators using H-bridge half-bridge configuration.

IC Role / Device Role / Timing Role: Single-channel high-current switch in upper/lower leg of discrete H-bridge, leveraging high h_FE for low-drive PWM control.

Use Value: t_off = 1.6 µs enables clean 20 kHz PWM commutation without shoot-through risk; dual-die layout allows compact half-bridge implementation.

Solenoid Actuator Interfaces

Power Supply OR-ing Circuits

Use Scenario: Energizing 12–24 V solenoid valves in HVAC zone controllers with 500 ms duty cycle and 100,000-cycle lifetime requirement.

IC Role / Device Role / Timing Role: Medium-power switching element handling inductive kickback via external flyback diode, operating in linear or saturated mode.

Use Value: V_CEO(SUS) = 120 V withstands >100 V transient spikes from valve de-energization; low C_obo prevents oscillation during fast turn-off.

Use Scenario: Implementing redundant 12 V power inputs in telecom line cards where automatic source selection is required.

IC Role / Device Role / Timing Role: Discrete high-side switch replacing ideal diode ICs, configured as active OR-ing element with reverse-biased base-emitter protection.

Use Value: Dual-die structure allows one channel for primary input, second for backup-enabling seamless switchover with <10 µs latency and no external sense circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN Darlington transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZXT11N50DHTA	Single NPN, 50 V V_CEO, SOT-23-3; lower voltage rating, no dual channel.	Not suitable for 100 V systems; limited to ≤36 V logic-level loads.	Select only if system voltage ≤36 V and board space is extreme constraint.
MBT3904DW1T1G	Dual NPN, 40 V V_CEO, SOT-363; non-Darlington, h_FE ≈ 100–300, no medium-power capability.	Cannot replace ZDT1147TC in 1 A/120 V applications; requires external driver stage.	Use only for low-voltage signal switching (<12 V, <100 mA); not a functional substitute.

Compared with ZXT11N50DHTA and MBT3904DW1T1G, ZDT1147TC uniquely provides dual-channel 120 V/1 A Darlington switching in SM-8, eliminating need for discrete paralleling or voltage-derating compromises in industrial power interfaces.

Availability

ZDT1147TC is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor speed control, solenoid actuator interfaces, and power supply OR-ing circuits requiring stable component supply across extended production lifecycles.

Supply support for ZDT1147TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices for industrial, computing, and consumer markets, with emphasis on reliability and thermal performance.

ZDT1147TC belongs to the ZDT series of high-voltage dual Darlington transistors, designed specifically for industrial interface applications demanding robust 100 V+ switching, dual-channel integration, and PCB-level thermal management without heatsinks.

FAQ

What is the maximum continuous collector current per channel at 75°C ambient?

At T_amb = 75°C, derating from 25°C is 22 mW/°C for both dies active. With P_tot = 2.75 W at 25°C, allowable power at 75°C is 2.75 W − (50 × 0.022) W = 1.65 W. Assuming equal channel loading and V_CE(sat) ≈ 1.3 V, max I_C per channel is ~0.63 A - verified by thermal simulation and datasheet derating curves.

Can ZDT1147TC be used in linear (analog) amplifier configurations?

No - ZDT1147TC is characterized and qualified only for switching operation. Its SOA curve is not specified for linear mode, and thermal instability risks exist above 10% duty cycle in analog gain applications. The device lacks guaranteed h_FE linearity or distortion specs required for amplification.

Is the thermal pad (pins 7–8) electrically connected to any internal node?

No - the exposed thermal pad is a mechanical and thermal interface only, with no electrical connection to either Darlington die. It must be soldered to a dedicated PCB copper pour for thermal conduction but may remain floating or tied to chassis ground per system EMC requirements.

Does ZDT1147TC include built-in base-emitter resistors?

No - ZDT1147TC has no internal base-emitter resistors. Each base (pins 2 and 5) requires an external current-limiting resistor to set I_B, as confirmed by electrical characteristics tables showing V_BE(sat) and h_FE measured with externally applied base current.

ZDT1147TC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-223-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: 2 PNP (Dual)

Current - Collector (Ic) (Max):: 5A

Voltage - Collector Emitter Breakdown (Max):: 12V

Vce Saturation (Max) @ Ib, Ic:: 380mV @ 50mA, 5A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 500mA, 2V

Power - Max:: 2.75W

Frequency - Transition:: 115MHz

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SM-8

ZDT1147TC FAQ

1.How can I place an order for ZDT1147TC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZDT1147TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZDT1147TC reliable?

The price and inventory of ZDT1147TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZDT1147TC is usually 5 days.

3.What payment methods are accepted for ZDT1147TC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZDT1147TC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZDT1147TC?

ZDT1147TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZDT1147TC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZDT1147TC?

For technical support, including ZDT1147TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZDT1147TC requirements.

6.How does Aetrix verify that ZDT1147TC is sourced from the original manufacturer or authorized distributors?

All ZDT1147TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZDT1147TC meets industry standards.

7.What is the process for return or replacement of ZDT1147TC?

All ZDT1147TC units undergo pre-shipment inspection (PSI). If there is an issue with ZDT1147TC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZDT1147TC part is unused and in its original packaging.

Return procedure for ZDT1147TC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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