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Diodes Incorporated ZDT605TC

Part No.:
ZDT605TC
Manufacturer:
Diodes Incorporated
Category:
Bipolar Transistor Arrays
Package:
SOT-223-8
Datasheet:
AetrixZDT605TC.pdf
Description:
TRANS 2NPN DARL 120V 1A SM8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,384

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Product details

Overview

ZDT605TC from Diodes Incorporated is a dual NPN medium-power Darlington transistor in SM-8 (SOT-223-8) package, designed for high-current switching and amplification in industrial control and power management circuits. It features VCEO = 120 V, IC = 1 A per die, hFE = 2000–100,000 at IC = 50 mA–2 A, VCE(sat) ≤ 1.5 V at IC = 1 A / IB = 1 mA, and operates from –55°C to +150°C.

For engineers reviewing the ZDT605TC datasheet, ZDT605TC pinout, ZDT605TC application, or ZDT605TC equivalent, key selection considerations include dual-die thermal derating (22 mW/°C when both transistors active), guaranteed V(BR)CBO ≥ 140 V, pulsed switching performance (ton = 0.5 µs, toff = 1.6 µs), and validated Darlington gain linearity across 0.01–2 A collector current range.

Technical Context

The ZDT605TC integrates two independent NPN Darlington pairs in a single SM-8 thermally enhanced package, each with built-in base-emitter resistors omitted-requiring external base drive control. Its structure supports parallel operation or complementary half-bridge configurations with matched VBE(sat) (1.7 V typical at IC = 1 A) and tightly coupled thermal response due to shared die substrate.

Electrical behavior is characterized under pulsed conditions (300 µs width, ≤2% duty cycle) to maintain junction temperature stability. Key AC parameters-including fT = 150 MHz at IC = 100 mA and Cibo = 90 pF-confirm suitability for medium-speed switching above audio frequencies while retaining DC gain integrity up to 2 A.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO120 V - Maximum sustainable collector-emitter voltage before breakdown under open-base condition; enables use in 100 V rail systems with safety margin.
IC (continuous)1 A per die - Continuous DC current handling per transistor; supports 2 A total when both dies used independently with proper PCB copper area.
hFE2K–100K - DC current gain range across 50 mA–2 A; ensures reliable saturation drive with low base current (e.g., 1 mA drives 1 A output).
VCE(sat)1.0–1.5 V at IC=1 A/IB=1 mA - Low saturation voltage minimizes conduction loss in linear or switching regulators and motor drivers.
fT150 MHz - Transition frequency confirms usable bandwidth for PWM frequencies up to ~10–20 MHz with gain margin.
Ptot (both dies)2.75 W at Tamb=25°C - Total dissipation limit with 22 mW/°C derating; requires ≥2 inch² copper pour for full rating.
ton/toff0.5 µs / 1.6 µs - Verified switching times under 0.5 A load; suitable for 500 kHz–1 MHz hard-switched topologies.

Pinout & Package

Package: SM-8 (8-lead SOT-223 variant), thermally optimized with exposed drain pad connected to Collector 1 and Collector 2 for enhanced heat transfer. Mounting requires minimum 2 inch² copper area on PCB for rated power dissipation.

Pin/TerminalCircuit RoleDesign Meaning
C1Collector of first Darlington pairHigh-current output node; internally bonded to exposed thermal pad for direct PCB heatsinking.
E1Emitter of first Darlington pairReference terminal for first channel; must be routed with low-inductance path in switching applications.
B1Base of first Darlington pairHigh-impedance input requiring current-limited drive (e.g., 1 mA typical for 1 A output).
C2Collector of second Darlington pairIndependent high-current output; electrically isolated but thermally coupled to C1 via shared substrate.
E2Emitter of second Darlington pairSecond channel reference; allows dual-load control without cross-conduction risk.
B2Base of second Darlington pairSeparate drive input enabling asynchronous or complementary switching control.

Key Features

FeatureDesign Value
Dual independent Darlington topologyEnables two-channel high-gain switching in one footprint-reducing board space vs. discrete dual-SOT-23 solutions.
V(BR)CBO ≥ 140 VSupports operation in 120 V AC rectified rails with 15% margin against transient overvoltage events.
Matched thermal resistance (45.5 °C/W both dies)Ensures balanced current sharing and predictable derating when both transistors operate simultaneously.
Guaranteed hFE ≥ 2000 at IC = 1 AAllows robust saturation with minimal base drive circuitry-reducing gate driver complexity in relay/motor interfaces.
Specified toff = 1.6 µs at IC = 0.5 AValidates turn-off speed for 500 kHz PWM control in DC-DC pre-regulators and lamp dimmers.

Applications

Industrial Relay DriversDC Motor Direction Control

Use Scenario: Driving 24–48 V DC electromagnetic relays in PLC I/O modules with microcontroller GPIO-level base drive.

IC Role / Device Role / Timing Role: High-gain Darlington switch providing >100× current amplification to energize 100–500 mA coil loads.

Use Value: Eliminates need for external driver transistors; VCE(sat) ≤ 1.5 V ensures <1.5 W coil power loss at 1 A, reducing thermal stress on PCB.

Use Scenario: Bidirectional 12–24 V brushed DC motor control in automated valves and HVAC actuators.

IC Role / Device Role / Timing Role: Dual-channel switching element implementing H-bridge half-side with external diodes and logic.

Use Value: Matched VBE(sat) and hFE between channels ensure symmetrical forward/reverse torque response; ton/toff support 20 kHz PWM commutation.

Linear Regulator Pass ElementsHigh-Voltage Sensor Interface Amplifiers

Use Scenario: Series pass transistor in adjustable 5–30 V, 0.5–1 A linear regulators for test equipment power supplies.

IC Role / Device Role / Timing Role: Medium-power current amplifier delivering stable output under variable load and line conditions.

Use Value: 120 V VCEO headroom accommodates 30 V output with 100 V input transients; Ptot = 2.75 W supports 1 A × 10 V dropout = 10 W dissipation only with heatsink.

Use Scenario: Signal conditioning stage amplifying low-level outputs from 100 V-range industrial sensors (e.g., pressure transducers).

IC Role / Device Role / Timing Role: High-input-impedance, high-gain NPN amplifier with extended VCB tolerance for sensor biasing.

Use Value: V(BR)CBO = 140 V permits direct connection to 100 V sensor excitation rails without level-shifting; hFE stability over –55°C to +150°C ensures calibration retention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN Darlington transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ZXTDA6712E6TASingle-die SOT-223-6; VCEO = 100 V, IC = 1.5 A, hFE = 1000–5000; no dual configuration.Requires two devices for dual-channel function; lower VCEO limits 120 V system use.Select when single-channel high-current drive suffices and board space allows duplication.
MBT3904DW1T1GDual NPN in SOT-363; VCEO = 40 V, IC = 200 mA, hFE = 100–300; standard BJT, not Darlington.Insufficient voltage/current rating for ZDT605TC's target applications; unsuitable for >60 V or >500 mA loads.Only viable for low-voltage signal switching where Darlington gain and voltage rating are unnecessary.

Compared with ZXTDA6712E6TA and MBT3904DW1T1G, the ZDT605TC uniquely delivers dual 120 V/1 A Darlington channels in one thermally efficient SM-8 package-enabling compact, high-reliability designs in industrial power interfaces where voltage margin, gain, and thermal coupling matter.

Availability

ZDT605TC is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor direction controllers, linear regulator pass elements, and high-voltage sensor interface amplifiers requiring stable component supply across extended temperature and long-life production cycles.

Supply support for ZDT605TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for industrial, automotive, and computing applications.

The ZDT605TC belongs to Diodes' high-voltage Darlington transistor product line, engineered specifically for ruggedized switching and amplification in harsh-environment control systems where thermal coupling, voltage margin, and gain consistency are critical.

FAQ

What is the maximum safe operating voltage for ZDT605TC in continuous DC applications?

The ZDT605TC is rated for VCEO = 120 V under open-base conditions and VCBO = 140 V. For reliable long-term operation, design should limit steady-state collector-emitter voltage to ≤100 V to maintain margin against transients and temperature-induced degradation. Derating to 80 V is recommended for 150°C ambient operation.

Can both Darlington pairs be operated simultaneously at full current without thermal runaway?

Yes-when mounted on ≥2 inch² copper area, both dies can operate continuously at 1 A each (2.75 W total) with 45.5 °C/W thermal resistance. The shared substrate ensures matched thermal drift, and hFE uniformity across current range prevents current hogging. No external balancing resistors are required.

Is ZDT605TC suitable for PWM motor control at 20 kHz?

Yes-measured ton = 0.5 µs and toff = 1.6 µs at IC = 0.5 A confirm clean switching at 20 kHz (50 µs period). However, VCE(sat) rise at high duty cycles requires attention to average power dissipation; thermal design must accommodate 2.75 W max with appropriate copper area.

Does ZDT605TC include integrated base-emitter resistors or require external biasing?

ZDT605TC has no internal base-emitter resistors-it is a bare Darlington pair requiring externally controlled base current. This provides full flexibility in drive design: users may implement current-limited GPIO drive, dedicated base resistors, or active current sources depending on switching speed and gain requirements.

ZDT605TC Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-223-8
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
2 NPN Darlington (Dual)
Current - Collector (Ic) (Max):
1A
Voltage - Collector Emitter Breakdown (Max):
120V
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 1mA, 1A
Current - Collector Cutoff (Max):
10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 1A, 5V
Power - Max:
2.75W
Frequency - Transition:
150MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SM8

ZDT605TC FAQ

1.How can I place an order for ZDT605TC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZDT605TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZDT605TC reliable?

The price and inventory of ZDT605TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZDT605TC is usually 5 days.

3.What payment methods are accepted for ZDT605TC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZDT605TC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZDT605TC?

ZDT605TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZDT605TC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZDT605TC?

For technical support, including ZDT605TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZDT605TC requirements.

6.How does Aetrix verify that ZDT605TC is sourced from the original manufacturer or authorized distributors?

All ZDT605TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZDT605TC meets industry standards.

7.What is the process for return or replacement of ZDT605TC?

All ZDT605TC units undergo pre-shipment inspection (PSI). If there is an issue with ZDT605TC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZDT605TC part is unused and in its original packaging.

Return procedure for ZDT605TC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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