Diodes Incorporated ZDT617TA

Overview

ZDT617TA from Diodes Incorporated is a dual NPN medium-power high-gain transistor in SM-8 (SOT-223-8) package, rated for V_CEO = 15 V, I_C = 3 A per die, and h_FE = 200–415 at I_C = 10–3 A; used in DC-DC converter switching stages and dual-channel load switching in industrial power management.

For engineers reviewing the ZDT617TA datasheet, ZDT617TA pinout, ZDT617TA application, or ZDT617TA equivalent, key selection criteria include dual-die thermal derating (20 mW/°C when both dies active), V_CE(sat) ≤ 200 mV at 3 A/50 mA drive, and f_T ≥ 80 MHz for moderate-speed switching.

Technical Context

The ZDT617TA integrates two independent NPN transistors on a single SM-8 substrate with shared thermal path; each die supports continuous 3 A collector current and pulsed 12 A peak, with guaranteed h_FE ≥ 200 at I_C = 10 mA and ≥ 150 at I_C = 3 A. Its V_BE(sat) = 0.9–1.0 V at 3 A/50 mA enables efficient base drive in low-voltage control circuits.

Thermal resistance θ_JA is 50 °C/W when both dies operate simultaneously under standard PCB mounting (2-inch² copper), and transition frequency f_T = 80–120 MHz ensures stable gain in <100 MHz switching applications such as synchronous rectification and PWM motor gate driving.

Key Specifications

Pinout & Package

Package: SM-8 (8-lead SOT-223 variant), surface-mount, thermally enhanced with exposed die pad; footprint compatible with industry-standard SOT-223-8 land pattern.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN medium-power switching applications.

Compared with ZDT617TA, ZXTD617TA offers improved h_FE consistency for precision current mirroring, while DMT3005LPSQ eliminates base current but introduces gate drive complexity and higher cost per channel in dual-load setups.

Availability

ZDT617TA is available at Aetrix Electronics and suitable for DC-DC converter switching stages, dual-channel load switching, industrial motor gate driving, and redundant power path control requiring stable component supply and long-term industrial lifecycle support.

Supply support for ZDT617TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal devices for power management, signal integrity, and connectivity.

ZDT617TA belongs to the ZXT/ZDT series of high-gain medium-power transistors designed specifically for space-constrained industrial switching and load control where thermal efficiency and drive simplicity are critical.

FAQ

What is the maximum allowable junction temperature for ZDT617TA?

The ZDT617TA has an absolute maximum junction temperature of +150°C, with storage temperature also rated from –55°C to +150°C. Operation above 150°C risks permanent degradation of h_FE and increased leakage; thermal design must ensure T_j stays below this limit under worst-case ambient and power dissipation conditions.

Can ZDT617TA be used in linear amplification mode?

ZDT617TA is characterized and qualified for switching operation, not linear amplification. Its SOA curve is defined only for pulsed and DC switching conditions; sustained linear operation risks secondary breakdown due to localized heating in the SM-8 package, and h_FE variation is not specified beyond switching test points.

Is the thermal pad electrically isolated in ZDT617TA?

No-the exposed thermal pad in the SM-8 package is internally connected to both emitters (E1 and E2). It must be soldered to a PCB copper pour tied to the system emitter/common ground net to ensure proper thermal conduction and electrical reference.

What is the recommended minimum base resistor value when driving ZDT617TA from a 3.3 V MCU GPIO?

For reliable 3 A saturation with h_FE ≥ 150, minimum base current is 20 mA. With V_BE(sat) ≈ 0.95 V, a 3.3 V GPIO yields ~2.35 V across the resistor, requiring R_B ≤ 117 Ω. A 100 Ω ±5% resistor is recommended to ensure margin under voltage drop and temperature drift.