Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated ZDT6702TA

Part No.:
ZDT6702TA
Manufacturer:
Diodes Incorporated
Category:
Bipolar Transistor Arrays
Package:
SOT-223-8
Datasheet:
AetrixZDT6702TA.pdf
Description:
TRANS NPN/PNP DARL 60V 1.75A SM8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ZDT6702TA from Diodes Incorporated is a complementary medium-power Darlington transistor pair (NPN+PNP) in a single SM-8 surface-mount package, rated for 60 V VCEO, 1.75 A continuous collector current per device, and 2.75 W total power dissipation with both dies active. It delivers high DC current gain (hFE up to 13k at 10 mA) and fast switching (ton ≤ 0.75 µs, toff ≤ 2.1 µs), enabling use in automotive relay drivers and industrial solenoid control circuits.

For engineers reviewing the ZDT6702TA datasheet, ZDT6702TA pinout, ZDT6702TA application, or ZDT6702TA equivalent, key selection criteria include complementary Darlington configuration, SM-8 thermal performance (45.5 °C/W θJA with both dies on), VCE(sat) ≤ 1.28 V at 1.75 A, and AEC-Q101 qualification readiness for automotive-grade designs.

Technical Context

The ZDT6702TA integrates matched NPN and PNP Darlington transistors on a single die substrate within an SM-8 thermally enhanced plastic package. Each transistor features built-in base-emitter resistors and achieves hFE ≥ 5,000 at low current (10 mA) and ≥ 2,000 at high current (2 A), supporting robust current amplification across wide operating ranges.

Its absolute maximum ratings include ±80 V VCBO, ±60 V VCEO, and ±10 V VEBO, with thermal derating of 22 mW/°C when both transistors operate simultaneously - confirming suitability for dual-polarity load switching where space-constrained PCB layouts demand integrated complementary drive capability.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO±60 V - Supports bidirectional 48 V system switching without external clamping
IC (continuous)±1.75 A - Drives medium-power relays or solenoids directly from microcontroller GPIO
Ptot (both on)2.75 W - Enables sustained dual-transistor operation on standard 2-inch² copper PCB
θJA (both on)45.5 °C/W - Confirms thermal viability for ambient temperatures up to +105°C in enclosed enclosures
hFE @ IC=10mA5k–13k (NPN), 2k–8k (PNP) - Reduces required base drive current by >10× vs. single-stage BJTs
toff1.2–2.1 µs - Meets timing requirements for PWM-driven inductive loads up to 100 kHz
VCE(sat) @ IC=1.75A≤1.28 V (NPN), ≤−1.28 V (PNP) - Limits conduction loss to <2.25 W per device at full load

Pinout & Package

Package: SM-8, 8-pin surface-mount molded plastic package with matte tin-plated leads, UL 94V-0 rating, and 0.117 g mass. Designed for reflow soldering at +260°C for 30 seconds per JEDEC J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
1, 2NPN EmitterCommon emitter connection for NPN Darlington stage; tied internally to emitter of first BJT
3NPN BaseInput node for NPN section; connects to base of driver transistor in Darlington stack
4NPN CollectorHigh-current output node for NPN side; rated for 60 V and 1.75 A continuous
5PNP CollectorHigh-current output node for PNP side; complements Pin 4 for push-pull or H-bridge topologies
6PNP BaseInput node for PNP section; electrically isolated from NPN base for independent control
7, 8PNP EmitterCommon emitter connection for PNP Darlington stage; enables high-side switching configurations

Key Features

FeatureDesign Value
Complementary Darlington PairIntegrated NPN and PNP devices share thermal coupling and footprint, eliminating discrete pairing mismatch and layout complexity
AEC-Q101 ReadinessManufactured in IATF 16949-certified facilities with PPAP capability - supports automotive qualification path without redesign
High hFE StabilityMinimum hFE = 2,000 at IC = 2 A ensures reliable saturation with minimal base drive across temperature and lifetime
Thermally Optimized SM-845.5 °C/W θJA with both dies active allows dual-device operation without forced air or heatsinking in most industrial modules
Fast Switchingtoff ≤ 2.1 µs (NPN) / 1.2 µs (PNP) enables efficient PWM control of inductive loads at frequencies up to 100 kHz

Applications

Automotive Relay DriversIndustrial Solenoid Control

Use Scenario: Driving 12 V/24 V automotive relays in body control modules under ASIL-B-relevant conditions.

IC Role / Device Role / Timing Role: Complementary Darlington switch providing low-loss, high-gain interface between MCU GPIO and relay coil.

Use Value: Eliminates need for external flyback diodes and base resistors while maintaining <1.3 V VCE(sat) at 1.5 A coil current.

Use Scenario: Controlling pneumatic/hydraulic solenoids in factory automation PLC output stages.

IC Role / Device Role / Timing Role: Dual-polarity load switch enabling bidirectional actuation or fail-safe de-energization.

Use Value: Single SM-8 package replaces two discrete TO-252 Darlington pairs, reducing board area by 40% and thermal coupling variance.

DC Motor Direction ControlPower Supply Sequencing

Use Scenario: Half-H-bridge implementation for 48 V brushed DC motors in medical pumps and portable tools.

IC Role / Device Role / Timing Role: High-side (PNP) and low-side (NPN) switching elements sharing thermal environment for balanced current handling.

Use Value: Matched VCE(sat) and toff ensure symmetrical turn-on/turn-off timing, minimizing shoot-through risk during direction reversal.

Use Scenario: Controlled ramp-up/down of multiple voltage rails in telecom power systems with strict sequencing windows.

IC Role / Device Role / Timing Role: Precision-controlled enable switch for auxiliary bias rails using microcontroller-timed base drive.

Use Value: High hFE (>5k) allows rail enable timing resolution to ±1 µs using standard 5 V GPIO, avoiding dedicated sequencer ICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary Darlington transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ZXTDA6717DHigher VCEO (80 V), lower hFE (min 1k @ 2 A), SOT-89-3 packageSingle-device solution only; no integrated complementary pairSelect when higher breakdown voltage is critical and board space permits discrete placement
MMBT6427Lower power (0.35 W), TO-236AB package, hFE min 100 @ 150 mANot suitable for >500 mA loads; lacks Darlington gain and thermal ratingUse only for signal-level complementary switching where current <200 mA and thermal constraints are minimal

Compared with ZDT6702TA, ZXTDA6717D offers higher voltage margin but requires separate NPN/PNP placement and sacrifices gain, while MMBT6427 is fundamentally unsuited for medium-power switching due to its 0.35 W limit and absence of Darlington architecture.

Availability

ZDT6702TA is available at Aetrix Electronics and suitable for automotive relay drivers, industrial solenoid control, and DC motor direction control requiring stable component supply and long-term production continuity.

Supply support for ZDT6702TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The ZDT6702TA belongs to Diodes' high-reliability bipolar transistor product line, engineered specifically for automotive and industrial applications demanding AEC-Q101 readiness, tight parameter matching, and thermally robust packaging.

FAQ

Is ZDT6702TA qualified to AEC-Q101?

No - ZDT6702TA itself is not AEC-Q101 certified, but Diodes states it is manufactured in IATF 16949-certified facilities with PPAP capability and supports automotive qualification paths. Customers must initiate formal AEC-Q101 testing and validation through Diodes' automotive program to obtain certified status for their specific application and lot traceability requirements.

What is the recommended PCB pad layout for SM-8 package?

The official SM-8 pad layout specifies C = 1.52 mm, C1 = 4.60 mm, X = 0.95 mm, Y = 2.80 mm, and Y1 = 6.80 mm (all in mm). These dimensions ensure optimal solder joint formation, thermal transfer to internal copper planes, and mechanical reliability during thermal cycling - deviations exceeding ±0.05 mm increase risk of tombstoning or voiding in reflow profiles.

Can ZDT6702TA replace two discrete SOT-223 Darlington transistors?

Yes - ZDT6702TA provides identical electrical functionality to two discrete SOT-223 Darlington transistors (e.g., ZTX653 + ZTX753) but in a single SM-8 package with superior thermal coupling, matched characteristics, and 35% smaller footprint. Its 45.5 °C/W θJA (both on) outperforms typical SOT-223 dual layouts by ≥20%, enabling higher sustained current in space-constrained designs.

Why does the datasheet state "NOT RECOMMENDED FOR NEW DESIGNS"?

This notice indicates Diodes has introduced newer-generation alternatives (e.g., ZXTDA series) with improved efficiency, higher voltage ratings, or smaller footprints. However, ZDT6702TA remains fully supported for legacy production, second-sourcing, and applications where its proven thermal performance, high hFE, and complementary integration provide measurable design advantages over newer options.

ZDT6702TA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-223-8
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
1 NPN, 1 PNP Darlington (Dual)
Current - Collector (Ic) (Max):
1.75A
Voltage - Collector Emitter Breakdown (Max):
60V
Vce Saturation (Max) @ Ib, Ic:
1.28V @ 2mA, 1.75A
Current - Collector Cutoff (Max):
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
5000 @ 500mA, 5V / 2000 @ 500mA, 5V
Power - Max:
2.75W
Frequency - Transition:
140MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SM8

ZDT6702TA FAQ

1.How can I place an order for ZDT6702TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZDT6702TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZDT6702TA reliable?

The price and inventory of ZDT6702TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZDT6702TA is usually 5 days.

3.What payment methods are accepted for ZDT6702TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZDT6702TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZDT6702TA?

ZDT6702TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZDT6702TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZDT6702TA?

For technical support, including ZDT6702TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZDT6702TA requirements.

6.How does Aetrix verify that ZDT6702TA is sourced from the original manufacturer or authorized distributors?

All ZDT6702TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZDT6702TA meets industry standards.

7.What is the process for return or replacement of ZDT6702TA?

All ZDT6702TA units undergo pre-shipment inspection (PSI). If there is an issue with ZDT6702TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZDT6702TA part is unused and in its original packaging.

Return procedure for ZDT6702TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ZDT6702TA Tags

  • ZDT6702TA
  • ZDT6702TA PDF
  • ZDT6702TA Datasheet
  • ZDT6702TA Specifications
  • ZDT6702TA Images
  • Diodes Incorporated
  • Diodes Incorporated ZDT6702TA
  • Buy ZDT6702TA
  • ZDT6702TA Price
  • ZDT6702TA Distributor
  • ZDT6702TA Supplier
  • ZDT6702TA Wholesale
Related Products
MBT3946DW1T1G
MBT3946DW1T1G

onsemi

BC846BPDW1T1G
BC846BPDW1T1G

onsemi

MBT2222ADW1T1G
MBT2222ADW1T1G

onsemi

BC847BDW1T1G
BC847BDW1T1G

onsemi

DMMT5401-7-F
DMMT5401-7-F

Diodes Incorporated

DMMT5551-7-F
DMMT5551-7-F

Diodes Incorporated

DMMT3904W-7-F
DMMT3904W-7-F

Diodes Incorporated

DMMT3906W-7-F
DMMT3906W-7-F

Diodes Incorporated

FMB3904
FMB3904

onsemi

FMB2222A
FMB2222A

onsemi

ULQ2003D1013TR
ULQ2003D1013TR

STMicroelectronics

ZXTD4591E6TA
ZXTD4591E6TA

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER