Diodes Incorporated ZDT6753TC

Overview

ZDT6753TC from Diodes Incorporated is a 100V complementary medium-power bipolar transistor pair in SM-8 (SOT223-8) package, integrating matched NPN and PNP silicon transistors. It delivers ±2A continuous collector current, <300mV saturation voltage at ±1A, and 100–175MHz transition frequency - enabling high-efficiency push-pull switching in DC-DC converters and motor drivers.

For engineers reviewing the ZDT6753TC datasheet, ZDT6753TC pinout, ZDT6753TC application, or ZDT6753TC equivalent, key selection criteria include complementary V_CEO ratings (±100V), thermal resistance (R_θJA = 55.6°C/W for NPN, 45.5°C/W for PNP), dual-die power dissipation (2.25W/2.75W), and AEC-Q qualified automotive-grade variants (Q-suffix).

Technical Context

The ZDT6753TC integrates two discrete silicon bipolar junction transistors - one NPN (BVCBO = 120V, h_FE = 70–200 @ IC = 50mA) and one PNP (BVCBO = −120V, h_FE = 70–200 @ IC = −50mA) - on a single SM-8 substrate with shared thermal path. Both devices are rated for operation from −55°C to +150°C and meet JEDEC high-reliability standards.

It supports fast switching (t_on = 80ns NPN / 35ns PNP; t_off = 1200ns NPN / 600ns PNP) under pulsed conditions (≤300μs, ≤2% duty cycle), with low output capacitance (C_obo = 30pF) and ESD robustness (HBM = 4kV, MM = 400V). The device is not recommended for new designs per manufacturer notice.

Key Specifications

Pinout & Package

Package: SM-8 (8-lead SOT223 variant), molded green plastic, matte tin-plated leads, 0.117g weight, UL 94V-0 rated, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary BJT applications.

Compared with ZDT6753TC, ZXTDA6717E6TA offers superior speed and efficiency at reduced current capability, while MBT3904DW1T1G serves entirely different low-power signal domains - neither provides drop-in replacement for 2A/±100V medium-power applications.

Availability

ZDT6753TC is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, LED dimming circuits, and solenoid control systems requiring stable component supply and JEDEC-qualified reliability.

Supply support for ZDT6753TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and quality systems aligned to AEC-Q standards.

The ZDT series targets medium-power bipolar switching applications where complementary device matching, thermal co-location, and automotive-grade reliability are required - particularly in industrial power conversion and motion control.

FAQ

Is ZDT6753TC pin-compatible with standard SOT223-3 packages?

No. ZDT6753TC uses the SM-8 (SOT223-8) footprint with eight terminals including dedicated base/emitter/collector pins for both NPN and PNP transistors plus a shared thermal pad. Standard SOT223-3 has only three pins and cannot accommodate the dual-die layout or thermal requirements.

What does "not recommended for new designs" mean for ZDT6753TC?

This notice indicates Diodes Incorporated has superseded ZDT6753TC with newer-generation complementary BJTs offering improved f_T, lower V_CE(sat), or enhanced thermal performance. Existing designs may continue using ZDT6753TC, but new projects should evaluate replacements like ZXTDA6717E6TA or automotive-qualified Q-suffix variants.

Can ZDT6753TC be used in linear amplifier configurations?

While electrically capable of linear operation, ZDT6753TC is optimized for switching applications. Its h_FE variation (25–200 across I_C range) and lack of guaranteed linearity specs make it unsuitable for precision analog amplification. It is intended for saturated switching in power stages, not Class-A/B amplifiers.

How is thermal management handled between the NPN and PNP dies?

Both dies share the same die attach and thermal pad (Pin 8), resulting in coupled junction-to-ambient paths. When both transistors conduct simultaneously, total power dissipation derates to 2.75W with R_θJA = 45.5°C/W - requiring larger copper area than for single-die operation. Layout must maintain uninterrupted thermal pad soldering to a solid ground plane.