Diodes Incorporated ZDT6758TA
- Part No.:
- ZDT6758TA
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays
- Package:
- SOT-223-8
- Datasheet:
-
ZDT6758TA.pdf
- Description:
- TRANS NPN/PNP 400V 500MA SM8
- Quantity:
- Payment:

- Shipping:

Inventory:7,868
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ZDT6758TA from Diodes Incorporated is a complementary medium-power bipolar transistor pair (NPN+PNP) in a single SM-8 (SOT-223-8) package, rated for 400 V VCEO, 0.5 A continuous IC, and 2.25 W dissipation per die. It serves as a high-voltage switching or linear amplification stage in offline power supplies, relay drivers, and industrial motor control interfaces where dual-polarity gain and breakdown robustness are required.
For engineers reviewing the ZDT6758TA datasheet, ZDT6758TA pinout, ZDT6758TA application, or ZDT6758TA equivalent, key selection criteria include verified 400 V breakdown symmetry, matched hFE (50–40 across 1–200 mA), pulsed switching times (130/3300 ns NPN; 140/2000 ns PNP), thermal resistance (55.6 °C/W single-die), and SM-8 footprint compatibility with PCB copper area constraints.
Technical Context
The ZDT6758TA integrates electrically isolated NPN and PNP silicon planar transistors on one die substrate, sharing no internal connection-enabling independent biasing and true complementary operation. Each transistor supports 400 V blocking capability, 5 V VEBO, and exhibits identical fT = 50 MHz under ±20 mA/±20 V conditions.
Thermal derating is defined separately for single-die (18 mW/°C) and dual-die (22 mW/°C) operation, reflecting its dual-die thermal coupling behavior on a 2-inch² PCB copper pad. Switching performance is characterized under pulsed conditions (300 µs width, ≤2% duty cycle) to avoid self-heating artifacts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | ±400 V - Enables direct interface with 230 VAC rectified bus without external snubbing in flyback or half-bridge primary-side switches. |
| IC (cont.) | ±0.5 A - Supports load currents up to 500 mA in linear regulator pass elements or discrete H-bridge legs. |
| Ptot (single die) | 2.25 W - Delivers 1.8 W usable output at Tamb = 70°C with standard 2-inch² PCB copper cooling. |
| hFE | 50 (min @ 1 mA), 40 (min @ 200 mA) - Ensures stable current gain across wide operating range for predictable base drive sizing. |
| fT | 50 MHz - Sufficient for <100 kHz PWM switching with margin; not suitable for RF or >500 kHz SMPS. |
| VCE(sat) | 0.25–0.5 V (NPN), –0.25––0.5 V (PNP) - Minimizes conduction loss in saturated-switch applications like solenoid or lamp drivers. |
| toff | 3300 ns (NPN), 2000 ns (PNP) - Limits switching loss in hard-commutated topologies; requires active base pull-down for fast turn-off. |
Pinout & Package
Package: SM-8 (8-lead SOT-223 variant), thermally enhanced with two isolated emitter pads and separate collector tabs per transistor. Mounting requires ≥2 inch² of 2-oz copper on PCB for rated power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| C1 | NPN collector | High-voltage output node; internally connected to lead frame tab - must be electrically isolated from heatsink unless insulated mounting used. |
| E1 | NPN emitter | Reference node for NPN circuit; tied to dedicated emitter pad - enables Kelvin sensing if routed separately. |
| B1 | NPN base | Current-controlled input; requires series resistor to limit IB based on hFE and target IC. |
| C2 | PNP collector | High-voltage output node; electrically isolated from C1 - allows independent high-side/low-side placement in push-pull stages. |
| E2 | PNP emitter | Reference node for PNP circuit; separate pad from E1 - prevents cross-conduction in complementary amplifier configurations. |
| B2 | PNP base | Inverted-control input; driven low to turn on - compatible with open-collector logic or microcontroller GPIO with pull-up. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary NPN+PNP pair | Enables balanced push-pull output stages without discrete matching or layout asymmetry. |
| 400 V VCEO symmetry | Permits identical voltage rating design for both polarities in high-voltage DC link switching. |
| Matched fT and hFE curves | Reduces gain mismatch and phase skew in Class-B audio or precision current mirror applications. |
| SM-8 thermal footprint | Provides 2.25 W single-die dissipation with standard PCB layout - avoids need for custom thermal vias or metal-core boards. |
| Isolated emitter pads | Allows independent emitter degeneration resistors or Kelvin feedback paths for each transistor. |
Applications
| AC-DC Adapter Primary Switch | Industrial Relay Driver |
|---|---|
Use Scenario: Discrete flyback converter primary switch in universal-input 12–24 V adapters. IC Role / Device Role / Timing Role: NPN transistor operates as main switching element; PNP provides auxiliary gate drive or bias supply regulation. Use Value: 400 V VCEO withstands reflected 385 V DC bus spikes; 0.5 A IC supports ≤15 W output with margin. | Use Scenario: Solid-state replacement for electromechanical relays controlling 24 VDC industrial solenoids. IC Role / Device Role / Timing Role: NPN drives relay coil cathode; PNP sinks coil anode current during turn-off for fast de-energization. Use Value: Matched toff (2–3.3 µs) ensures <10 µs total release time; VCE(sat) < 0.5 V limits coil heating. |
| Linear Regulator Pass Element | Half-Bridge Gate Driver Stage |
Use Scenario: High-voltage linear regulator for analog sensor front-ends requiring low-noise, ripple-free 15 V supply. IC Role / Device Role / Timing Role: PNP acts as series pass transistor; NPN provides error amplifier load or reference buffer. Use Value: Low VCE(sat) (–0.25 V) minimizes dropout; hFE stability over 1–200 mA ensures consistent loop gain. | Use Scenario: Discrete level-shifting stage driving high-side MOSFET gate in 100–400 V half-bridge inverters. IC Role / Device Role / Timing Role: PNP pulls gate high; NPN pulls gate low - forming complementary totem-pole output. Use Value: 400 V collector rating tolerates bootstrap node transients; matched fT ensures symmetrical rise/fall times. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary high-voltage transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZTX653/ZTX753 | Separate SOT-89 devices; no shared thermal path; lower VCEO (300 V); higher RθJA (125 °C/W). | Requires dual footprint and independent thermal management; unsuitable for space-constrained 400 V designs. | Select when board area permits discrete placement and 300 V rating suffices. |
| BCX69/BCX70 | SOT-89 pair; VCEO = ±45 V; hFE = 100–250; fT = 150 MHz; Ptot = 0.8 W. | Optimized for low-voltage, high-gain audio or signal switching - not rated for mains-referenced circuits. | Select only for sub-60 V DC applications requiring higher gain or speed. |
Compared with ZTX653/ZTX753 and BCX69/BCX70, the ZDT6758TA uniquely delivers integrated 400 V complementary operation in a single SM-8 package with coordinated thermal derating - critical for compact, high-reliability offline power and industrial actuation.
Availability
ZDT6758TA is available at Aetrix Electronics and suitable for AC-DC adapter primary switches, industrial relay drivers, linear regulator pass elements, and half-bridge gate driver stages requiring stable component supply and long-term manufacturability.
Supply support for ZDT6758TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial and automotive markets.
The ZDT6758TA belongs to Diodes' high-voltage complementary transistor family, engineered specifically for space-constrained, high-breakdown industrial power interfaces where thermal coupling and layout symmetry improve system efficiency and EMI performance.
FAQ
What is the maximum safe operating voltage for ZDT6758TA in continuous DC applications?
The ZDT6758TA supports continuous DC operation up to ±400 V VCEO and ±400 V VCBO per transistor, provided ambient temperature remains ≤70°C and PCB copper area meets the 2-inch² requirement. Derating is mandatory above 25°C ambient - 18 mW/°C for single-die use, 22 mW/°C for dual-die simultaneous operation.
Can ZDT6758TA be used in linear amplifier configurations?
Yes - its hFE stability (50 min @ 1 mA, 40 min @ 200 mA), low VCE(sat), and matched NPN/PNP characteristics support Class-B and Class-AB linear amplifiers up to ~100 kHz. Thermal runaway risk is mitigated by the SM-8 package's low RθJA (55.6 °C/W), but emitter degeneration resistors are recommended for bias stability.
Does ZDT6758TA require external base resistors for microcontroller GPIO drive?
Yes - direct GPIO connection risks excessive base current due to low VBE(sat) (0.9 V) and typical hFE of 50. For 3.3 V or 5 V logic driving 100 mA collector current, a 1 kΩ series resistor limits base current to ~2.4 mA (3.3 V) or ~4.1 mA (5 V), ensuring saturation while protecting the MCU output stage.
How does the SM-8 package differ from standard SOT-223 in thermal performance?
The SM-8 is an 8-lead variant of SOT-223 with doubled collector and emitter terminals per transistor - enabling separate high-current paths and improved thermal spreading. Its RθJA is 55.6 °C/W (single die) versus ~125 °C/W for standard SOT-223, achieved via larger copper contact area and internal lead-frame design optimized for 2-inch² PCB mounting.
ZDT6758TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-223-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max):
- 500mA
- Voltage - Collector Emitter Breakdown (Max):
- 400V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 200mA, 10V
- Power - Max:
- 2.75W
- Frequency - Transition:
- 50MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SM8
ZDT6758TA FAQ
1.How can I place an order for ZDT6758TA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZDT6758TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZDT6758TA reliable?
The price and inventory of ZDT6758TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZDT6758TA is usually 5 days.
3.What payment methods are accepted for ZDT6758TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZDT6758TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZDT6758TA?
ZDT6758TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZDT6758TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZDT6758TA?
For technical support, including ZDT6758TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZDT6758TA requirements.
6.How does Aetrix verify that ZDT6758TA is sourced from the original manufacturer or authorized distributors?
All ZDT6758TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZDT6758TA meets industry standards.
7.What is the process for return or replacement of ZDT6758TA?
All ZDT6758TA units undergo pre-shipment inspection (PSI). If there is an issue with ZDT6758TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZDT6758TA part is unused and in its original packaging.
Return procedure for ZDT6758TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ZDT6758TA Tags

-
MBT3946DW1T1G
onsemi

-
BC846BPDW1T1G
onsemi

-
MBT2222ADW1T1G
onsemi

-
BC847BDW1T1G
onsemi

-
DMMT5401-7-F
Diodes Incorporated

-
DMMT5551-7-F
Diodes Incorporated

-
DMMT3904W-7-F
Diodes Incorporated

-
DMMT3906W-7-F
Diodes Incorporated

-
FMB3904
onsemi

-
FMB2222A
onsemi

-
ULQ2003D1013TR
STMicroelectronics

-
ZXTD4591E6TA
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

