Diodes Incorporated ZDT717TA

Overview

ZDT717TA from Diodes Incorporated is a dual PNP medium-power high-gain bipolar junction transistor in SM-8 (SOT-223-8) package, rated for V_CEO = −12 V, I_C = −2.5 A per die, and h_FE ≥ 300 at I_C = −10 mA; used in dual-channel load switching and complementary driver stages in industrial DC-DC converters.

For engineers reviewing the ZDT717TA datasheet, ZDT717TA pinout, ZDT717TA application, or ZDT717TA equivalent, key selection criteria include verified dual-die thermal derating (20 mW/°C when both dies active), confirmed V_CE(sat) ≤ −170 mV at I_C = −2.5 A, and validated f_T = 80–110 MHz for medium-speed switching.

Technical Context

This dual PNP transistor integrates two independent high-h_FE silicon epitaxial planar devices in a single SM-8 thermally enhanced leadframe. Each die supports continuous I_C = −2.5 A with V_CE(sat) ≤ −170 mV at I_B = −50 mA and operates up to +150°C junction temperature.

It features matched breakdown ratings (V_(BR)CEO = −12 V, V_(BR)EBO = −5 V), low C_obo = 21–30 pF at V_CB = −10 V, and fast switching (t_on = 70 ns, t_off = 130 ns) under pulsed −2 A load conditions.

Key Specifications

Pinout & Package

Package: SM-8 (8-lead SOT-223 variant), thermally optimized for dual-die mounting on 2-inch-square PCB copper pour.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP medium-power switching applications.

Compared with ZXTD717TA and DMT3005LPSQ-13, ZDT717TA delivers superior gain-margin and lower conduction loss in dual-channel configurations, while its monolithic SM-8 construction simplifies thermal management and layout versus discrete alternatives.

Availability

ZDT717TA is available at Aetrix Electronics and suitable for industrial DC-DC converters, redundant load switching, and complementary output stage designs requiring stable component supply and guaranteed dual-die performance consistency.

Supply support for ZDT717TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for industrial and automotive markets.

ZDT717TA belongs to Diodes' ZXT/ZDT series of high-gain medium-power transistors, designed specifically for space-constrained dual-channel switching and precision current mirror applications in harsh-temperature environments.

FAQ

What is the maximum allowable junction temperature for ZDT717TA?

The absolute maximum junction temperature is +150°C, with storage temperature range also specified from −55°C to +150°C. Operation above this limit risks permanent degradation of h_FE and increased leakage currents; thermal design must ensure θ_JA ≤ 50°C/W under full dual-die load.

Can ZDT717TA be used in linear amplifier mode?

Yes - its h_FE stability (300–475 across I_C = −10 mA to −2.5 A) and low V_CE(sat) support Class-A or AB operation, but power dissipation must remain within 2.5 W total (both dies) at T_amb ≤ 25°C, derated by 20 mW/°C above that point.

Is the SM-8 package lead-free and RoHS compliant?

Yes - ZDT717TA is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and JEDEC JS-001 ESD standards. The SM-8 package uses matte tin plating over copper alloy leads and meets IPC/JEDEC J-STD-020 moisture sensitivity level 1.

How are the two PNP transistors electrically isolated inside the SM-8 package?

The two PNP dies share only the package substrate and thermal path; their collectors (C1/C2), emitters (E1/E2), and bases (B1/B2) are fully electrically isolated with no internal connections. This allows independent biasing, different supply rails, or differential operation without cross-talk.