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Diodes Incorporated ZDT751TA

Part No.:
ZDT751TA
Manufacturer:
Diodes Incorporated
Category:
Bipolar Transistor Arrays
Package:
SOT-223-8
Datasheet:
AetrixZDT751TA.pdf
Description:
TRANS 2PNP DUAL 60V 2A SM8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:251

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Product details

Overview

ZDT751TA from Diodes Incorporated is a dual PNP medium-power transistor in SM-8 package, rated for VCEO = −60 V, IC = −2 A continuous, and Ptot = 2.75 W (both dies on), with hFE = 70–300 at IC = −50 mA to −2 A. It serves as a high-current switching or linear amplification device in automotive body control modules and industrial power interface circuits.

For engineers reviewing the ZDT751TA datasheet, ZDT751TA pinout, ZDT751TA application, or ZDT751TA equivalent, key selection considerations include its dual-die thermal derating (22 mW/°C), VCE(sat) ≤ −0.5 V at IC = −2 A, AEC-Q101 qualification eligibility, and SM-8 footprint compatibility with high-density PCB layouts.

Technical Context

The ZDT751TA integrates two identical PNP bipolar junction transistors in a single SM-8 thermally enhanced plastic package, sharing common emitter connections per die. Its design supports parallel operation or complementary stage pairing with low inter-die thermal coupling.

It operates across −55°C to +150°C junction temperature range, with V(BR)CBO = −80 V and fT = 100–140 MHz, enabling use in medium-speed switching (ton = 40 ns, toff = 450 ns) and analog gain stages where DC current gain stability across IC = −50 mA to −2 A is required.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−60 V - Maximum safe collector-emitter voltage before breakdown under open-base condition
IC (continuous)−2 A - Sustained collector current per die without thermal runaway at Tamb = +25°C
Ptot (both on)2.75 W - Total dissipation limit when both transistors operate simultaneously on PCB with 2″² copper
VCE(sat)−0.5 V @ IC = −2 A, IB = −200 mA - Low saturation voltage enables <1 W conduction loss per die
hFE70–300 - DC current gain range across IC = −50 mA to −2 A, supporting stable biasing in Class-A/B output stages
fT100–140 MHz - Transition frequency confirms suitability for <10 MHz switching and audio-frequency amplification
toff450 ns - Turn-off delay limits maximum practical switching frequency to ~200 kHz in hard-switched applications

Pinout & Package

Package: SM-8, surface-mount molded plastic (UL 94V-0), 8-pin leadframe with matte tin-plated leads, 0.117 g mass, compatible with JEDEC J-STD-020 reflow profile (260°C/30 s).

Pin/TerminalCircuit RoleDesign Meaning
1, 2Emitter (Die 1)Common emitter connection for first PNP transistor; tied internally to Pin 1 and Pin 2
3Base (Die 1)Control terminal for first PNP transistor; requires negative bias relative to emitter to turn on
4Collector (Die 1)High-current output node for Die 1; rated for −60 V and −2 A continuous
5, 6Emitter (Die 2)Common emitter connection for second PNP transistor; tied internally to Pin 5 and Pin 6
7Base (Die 2)Independent control terminal for second PNP transistor; electrically isolated from Die 1 base
8Collector (Die 2)High-current output node for Die 2; fully isolated from Die 1 collector

Key Features

FeatureDesign Value
Dual PNP topologyTwo independent high-current PNP transistors in one SM-8 package, reducing board space vs. discrete solutions
AEC-Q101 readinessManufactured in IATF 16949-certified facilities; qualified for automotive applications requiring PPAP documentation
Thermal derating22 mW/°C reduction above +25°C when both dies are active, enabling predictable power handling up to +150°C
Low VCE(sat)≤ −0.5 V at full −2 A load ensures <1 W conduction loss per die, minimizing heatsink requirements
High fT140 MHz typical transition frequency supports stable gain in audio preamp and medium-speed switch-mode control loops

Applications

Automotive Body Control Unit (BCU)Industrial Relay Driver Module

Use Scenario: Driving multiple 12 V solenoids and lamps in vehicle door modules and lighting control systems.

IC Role / Device Role / Timing Role: Dual PNP switch providing high-side current sinking for loads referenced to battery rail.

Use Value: Single-package dual configuration reduces component count by 50% vs. discrete TO-252 transistors while maintaining AEC-Q101 compliance.

Use Scenario: Controlling 24 V industrial relays and contactors in PLC I/O expansion cards.

IC Role / Device Role / Timing Role: Medium-power current sink amplifier interfacing microcontroller GPIOs to relay coils.

Use Value: VCEO = −60 V and IC = −2 A rating allow direct drive of 24 V/1.5 A relays without external flyback protection.

DC Motor Direction Control (H-Bridge Leg)Linear Voltage Regulator Pass Element

Use Scenario: Complementary high-side PNP leg in 24 V brushed DC motor H-bridge for warehouse automation equipment.

IC Role / Device Role / Timing Role: High-current PNP switch enabling bidirectional motor control with fast ton/toff timing.

Use Value: 40 ns turn-on and 450 ns turn-off support PWM frequencies up to 200 kHz, minimizing torque ripple.

Use Scenario: Pass transistor in adjustable 5–15 V, 1.5 A linear regulator for test instrumentation power supplies.

IC Role / Device Role / Timing Role: Linear amplification element operating in active region with stable hFE across load current.

Use Value: hFE = 80–170 at IC = −1 A ensures predictable base drive requirements and thermal stability under full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP medium-power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ZXT10P20DE6TAHigher VCEO (−200 V), lower IC (−1.5 A), SOT-26 package, higher VCE(sat) (−0.85 V @ −1 A)Better suited for high-voltage, lower-current snubber or flyback circuits; not drop-in due to different pinout and thermal profileSelect when >100 V blocking is required and board space allows SOT-26 mounting
DMT3005LPSQ-13Single PNP, −30 V VCEO, −5 A IC, PowerDI5060 package, lower RθJA (35 °C/W)Higher current capability but no dual topology; requires two devices for same functionalityChoose when single high-current PNP is sufficient and thermal performance is prioritized over integration

Compared with ZXT10P20DE6TA and DMT3005LPSQ-13, the ZDT751TA uniquely delivers dual PNP integration at −60 V/−2 A in SM-8, balancing board-area savings, automotive qualification readiness, and thermal derating behavior-making it optimal for space-constrained BCU and relay driver designs where dual-channel control is essential.

Availability

ZDT751TA is available at Aetrix Electronics and suitable for automotive body control units, industrial relay drivers, DC motor H-bridge legs, and linear regulator pass elements requiring stable component supply and long-term manufacturability planning.

Supply support for ZDT751TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The ZDT751TA belongs to Diodes' high-reliability bipolar transistor product line, engineered specifically for automotive and industrial power interface applications demanding AEC-Q101 readiness, robust thermal performance, and dual-device integration in compact surface-mount packages.

FAQ

Is ZDT751TA qualified to AEC-Q101?

No official AEC-Q101 certificate is published for ZDT751TA; however, Diodes states it is manufactured in IATF 16949-certified facilities and supports PPAP documentation upon request. Customers must perform their own qualification testing per AEC-Q101 Rev E for specific application conditions including temperature cycling, HTOL, and ESD.

What is the maximum allowable junction temperature during continuous operation?

The ZDT751TA has an absolute maximum junction temperature of +150°C. Continuous operation at this limit requires strict thermal design: PCB copper area ≥ 2 inches² per die, ambient ≤ +85°C, and derated power to ≤ 1.2 W per die based on RθJA = 45.5 °C/W (both dies on).

Can ZDT751TA be used in parallel configurations across both dies?

Yes-ZDT751TA's dual-die structure supports parallel operation of both PNP transistors for increased current capacity up to −4 A total, provided matched base drive, symmetrical PCB layout, and thermal coupling management to avoid current imbalance due to hFE variation (±30% typical).

Why does the datasheet state "NOT RECOMMENDED FOR NEW DESIGNS"?

This notice reflects Diodes' strategic roadmap shift toward newer high-efficiency PNP alternatives (e.g., MOSFET-based load switches). The ZDT751TA remains fully supported for existing designs and legacy production, with no announced obsolescence date or last-time-buy announcement as of June 2026.

ZDT751TA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-223-8
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 PNP (Dual)
Current - Collector (Ic) (Max):
2A
Voltage - Collector Emitter Breakdown (Max):
60V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 200mA, 2A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 500mA, 2V
Power - Max:
2.75W
Frequency - Transition:
140MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SM8

ZDT751TA FAQ

1.How can I place an order for ZDT751TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZDT751TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZDT751TA reliable?

The price and inventory of ZDT751TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZDT751TA is usually 5 days.

3.What payment methods are accepted for ZDT751TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZDT751TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZDT751TA?

ZDT751TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZDT751TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZDT751TA?

For technical support, including ZDT751TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZDT751TA requirements.

6.How does Aetrix verify that ZDT751TA is sourced from the original manufacturer or authorized distributors?

All ZDT751TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZDT751TA meets industry standards.

7.What is the process for return or replacement of ZDT751TA?

All ZDT751TA units undergo pre-shipment inspection (PSI). If there is an issue with ZDT751TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZDT751TA part is unused and in its original packaging.

Return procedure for ZDT751TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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