Diodes Incorporated ZDT751TC
- Part No.:
- ZDT751TC
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays
- Package:
- SOT-223-8
- Datasheet:
-
ZDT751TC.pdf
- Description:
- TRANS 2PNP DUAL 60V 2A SM8
- Quantity:
- Payment:

- Shipping:

Inventory:2,236
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Product details
Overview
ZDT751 from Diodes Incorporated is a dual PNP medium-power transistor in SM-8 package, rated for VCEO = −60 V, IC = −2 A continuous, and Ptot = 2.75 W (both dies on), with hFE = 70–300 at IC = −50 mA to −2 A. It serves as a high-current switching or linear amplification stage in automotive body control modules and industrial relay drivers.
For engineers reviewing the ZDT751 datasheet, ZDT751 pinout, ZDT751 application, or ZDT751 equivalent, key selection considerations include its dual-die thermal derating (22 mW/°C), VCE(sat) = −0.15 V @ IC = −1 A / IB = −100 mA, AEC-Q101 qualification status, and SM-8 footprint compatibility with space-constrained PCB layouts.
Technical Context
The ZDT751 integrates two independent PNP transistors in a single SM-8 thermally enhanced plastic package, sharing a common emitter configuration per die. Each die supports −6 A peak pulse current and operates across −55°C to +150°C junction temperature range.
Its electrical behavior is defined by guaranteed V(BR)CEO = −60 V, VCE(sat) ≤ −0.3 V at IC = −2 A, and fT ≥ 100 MHz, enabling use in medium-speed switching (<500 kHz) and analog gain stages where low saturation voltage and stable hFE over current range are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −60 V - Maximum safe collector-emitter voltage before breakdown under open-base condition |
| IC (cont.) | −2 A - Continuous DC collector current per die; limits steady-state power handling in relay or motor drive stages |
| Ptot (both on) | 2.75 W - Total dissipation when both dies operate simultaneously; requires ≥45.5 °C/W thermal path to ambient |
| VCE(sat) | −0.15 V @ IC=−1A/IB=−100mA - Low saturation voltage reduces conduction loss in high-side switch applications |
| hFE | 70–300 - Current gain range across IC = −50 mA to −2 A; supports stable biasing in linear and switching modes |
| fT | 100 MHz - Transition frequency enables reliable operation up to ~500 kHz switching with controlled rise/fall times |
| toff | 450 ns - Turn-off delay under pulsed conditions; constrains maximum switching frequency in PWM circuits |
Pinout & Package
Package: SM-8, surface-mount, 8-pin dual-in-line outline with exposed thermal pad (non-electrical), molded plastic UL 94V-0 housing, matte tin-plated leads solderable per MIL-STD-202 Method 208.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter (Die 1) | Common emitter connection for first PNP transistor; tied to PCB ground plane for thermal and current return path |
| 2 | Base (Die 1) | Control input for first transistor; requires −100 mA base drive for full saturation at 1 A collector load |
| 3 | Collector (Die 1) | High-side output node; connects to load supply rail (e.g., +12 V automotive) when used as high-side switch |
| 4 | Collector (Die 2) | Second high-side output node; electrically isolated from Die 1; supports dual-load independent control |
| 5 | Base (Die 2) | Independent control input for second transistor; no internal coupling to Pin 2 |
| 6 | Emitter (Die 2) | Second common emitter; may be tied separately or shared with Pin 1 depending on circuit topology |
| 7, 8 | Thermal Pad (exposed) | Non-electrical copper slug for PCB thermal conduction; must be soldered to large copper area for rated Ptot |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent PNP transistors | Enables compact dual-channel switching without discrete pairing; reduces board area vs. two SOT-223 devices |
| AEC-Q101 qualified | Validated for automotive applications including BCM, lighting control, and HVAC actuators per stress test requirements |
| SM-8 thermal performance | 45.5 °C/W θJA (both dies on) allows 2.75 W dissipation with standard 2-inch² copper; exceeds SO-8 and DPAK alternatives |
| Low VCE(sat) | −0.15 V at 1 A enables <150 mW conduction loss per die-critical for thermally constrained engine bay modules |
| Wide TJ range | −55°C to +150°C operation supports under-hood deployment without derating in most automotive environments |
Applications
| Automotive Body Control Module | Industrial Relay Driver |
|---|---|
Use Scenario: Driving multiple 12 V solenoids and lamps in vehicle door modules and central junction boxes. IC Role / Device Role / Timing Role: Dual high-side switch providing load isolation and current sinking via common-emitter configuration. Use Value: −60 V VCEO withstands automotive load dump transients; dual-die layout eliminates need for two separate packages and matching components. | Use Scenario: Controlling 24 V DC industrial relays in PLC I/O modules with tight thermal constraints. IC Role / Device Role / Timing Role: Medium-power interface between microcontroller GPIO and relay coil, operating in linear or saturated mode. Use Value: 2.75 W total dissipation supports simultaneous relay actuation; SM-8 footprint simplifies thermal management vs. TO-252. |
| DC Motor Direction Control | LED String Current Sink |
Use Scenario: Bidirectional H-bridge half-bridge stage for 24 V brushed DC motors in power seats and sunroofs. IC Role / Device Role / Timing Role: PNP complement to N-channel MOSFETs in high-side leg; provides fast turn-on with low VBE(sat). Use Value: −0.9 V VBE(sat) at 1 A ensures sufficient base drive margin from 3.3 V or 5 V logic; toff = 450 ns supports PWM up to 10 kHz. | Use Scenario: Constant-current sink for multi-segment automotive LED clusters requiring precise brightness control. IC Role / Device Role / Timing Role: Linear current regulator configured with external sense resistor and op-amp feedback. Use Value: hFE stability across IC = 100 mA–2 A enables accurate current mirroring; −5 V VEBO prevents base-emitter reverse breakdown during PWM dimming. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP medium-power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXT10P20DE6 | Single PNP, SOT-23-6, VCEO = −20 V, IC = −1.5 A, Ptot = 1.25 W | Limited to lower-voltage systems; not suitable for 24 V load dump environments | Select only for space-constrained 12 V logic-level interfaces where dual functionality is unnecessary |
| DMT3005LSDQ | Dual PNP, PowerDI5060, VCEO = −50 V, IC = −3 A, Ptot = 3.1 W, AEC-Q101 qualified | Higher current rating and improved thermal resistance (θJA = 40.5 °C/W); larger footprint than SM-8 | Preferred for new designs requiring higher reliability margin and extended lifetime in harsh environments |
Compared with ZDT751, ZXT10P20DE6 offers smaller size but sacrifices voltage robustness and dual-channel integration, while DMT3005LSDQ delivers higher power capability and better thermal performance in a slightly larger package-making it the recommended upgrade path for new automotive designs.
Availability
ZDT751 is available at Aetrix Electronics and suitable for automotive body control modules, industrial relay drivers, DC motor direction control circuits, and LED string current sink applications requiring stable component supply and legacy design support.
Supply support for ZDT751 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The ZDT751 belongs to Diodes' automotive-qualified bipolar transistor product line, engineered specifically for high-reliability medium-power switching in harsh-environment applications such as engine control, lighting, and power distribution.
FAQ
Is ZDT751 AEC-Q101 qualified?
Yes, the ZDT751 is qualified to AEC-Q101 for automotive applications. Documentation confirms qualification testing per stress test requirements, PPAP capability, and manufacture in IATF 16949 certified facilities. Full qualification reports are available upon request through Diodes' automotive support team.
What is the thermal pad on pins 7 and 8 used for?
Pins 7 and 8 form a single exposed thermal pad on the underside of the SM-8 package. It is non-electrical and intended solely for thermal conduction to the PCB. To achieve rated Ptot, this pad must be soldered to a minimum 2-inch² copper area using appropriate stencil and reflow profile per JEDEC J-STD-020.
Can ZDT751 be used in linear amplifier configurations?
Yes, the ZDT751 supports linear operation with hFE specified from −50 mA to −2 A and VCE = −2 V. Its −60 V VCEO and 2.75 W dissipation allow Class-A or AB biasing in low-frequency audio or sensor signal conditioning stages, provided thermal design accommodates steady-state power.
Why does the datasheet state "NOT RECOMMENDED FOR NEW DESIGNS"?
This notice reflects Diodes' strategic roadmap: newer alternatives like DMT3005LSDQ offer improved thermal performance, higher current rating, and extended lifetime. The ZDT751 remains fully qualified and supported for legacy production and repair, but Diodes encourages migration for new projects to ensure long-term supply and enhanced reliability.
ZDT751TC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-223-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 PNP (Dual)
- Current - Collector (Ic) (Max):
- 2A
- Voltage - Collector Emitter Breakdown (Max):
- 60V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 500mA, 2V
- Power - Max:
- 2.75W
- Frequency - Transition:
- 140MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SM8
ZDT751TC FAQ
1.How can I place an order for ZDT751TC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZDT751TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZDT751TC reliable?
The price and inventory of ZDT751TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZDT751TC is usually 5 days.
3.What payment methods are accepted for ZDT751TC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZDT751TC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZDT751TC?
ZDT751TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZDT751TC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZDT751TC?
For technical support, including ZDT751TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZDT751TC requirements.
6.How does Aetrix verify that ZDT751TC is sourced from the original manufacturer or authorized distributors?
All ZDT751TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZDT751TC meets industry standards.
7.What is the process for return or replacement of ZDT751TC?
All ZDT751TC units undergo pre-shipment inspection (PSI). If there is an issue with ZDT751TC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZDT751TC part is unused and in its original packaging.
Return procedure for ZDT751TC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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