Diodes Incorporated ZDT758TA

Overview

ZDT758TA from Diodes Incorporated is a dual PNP medium-power transistor in SM-8 (SOT-223-8) package, rated for -400 V V_CEO and -0.5 A continuous collector current per die, with V_CE(sat) = -0.25 V at I_C = -50 mA / I_B = -5 mA, used in high-voltage switching and relay driver circuits.

For engineers reviewing the ZDT758TA datasheet, ZDT758TA pinout, ZDT758TA application, or ZDT758TA equivalent, key selection criteria include dual-die thermal derating (22 mW/°C when both dies active), h_FE = 40–50 at I_C = -100 mA, f_T = 50 MHz, and guaranteed V_(BR)CBO = -400 V under pulsed test conditions.

Technical Context

This dual PNP transistor integrates two independent high-voltage switching elements in a single SM-8 package, sharing common thermal mass but electrically isolated. Each die supports -400 V breakdown, -1 A peak pulse current, and operates across -55°C to +150°C junction temperature range.

It features low saturation voltage (-0.25 V typical at -50 mA), fast switching (t_on = 140 ns, t_off = 2000 ns), and stable h_FE down to -55°C, making it suitable for repetitive high-voltage DC switching where thermal coupling between devices improves system-level power density.

Key Specifications

Pinout & Package

Package: SM-8 (8-lead SOT-223 variant), surface-mount, thermally enhanced with exposed drain paddle (common emitter connection for both transistors).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage dual PNP switching applications.

Compared with ZXTD758TA and DMT3005LSDQ, ZDT758TA offers the highest voltage rating (-400 V) in its class and lowest cost-per-channel for non-critical gain matching, while maintaining proven reliability in industrial relay and gate driver designs since 1995.

Availability

ZDT758TA is available at Aetrix Electronics and suitable for industrial relay drivers, high-voltage DC-DC gate drivers, AC line monitoring circuits, and redundant power supply OR-ing requiring stable component supply and long-term lifecycle assurance.

Supply support for ZDT758TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for industrial, computing, consumer, and communications markets.

ZDT758TA belongs to Diodes' high-voltage bipolar transistor product line, designed specifically for robust, thermally efficient switching in space-constrained industrial control and power conversion systems.

FAQ

What is the maximum safe operating voltage for ZDT758TA in continuous DC mode?

ZDT758TA is rated for -400 V V_CEO and -400 V V_CBO under pulsed test conditions (pulse width ≤300 µs, duty cycle ≤2%). For continuous DC operation, derating to ≤-320 V is recommended per JEDEC JESD78 guidelines to ensure long-term reliability and avoid avalanche-induced degradation.

Can both transistors in ZDT758TA be operated simultaneously at full current?

Yes - both transistors can operate simultaneously at -0.5 A each, but total power dissipation must remain within 2.75 W at T_amb = 25°C. Thermal resistance drops to 45.5 °C/W when both dies are active, requiring ≥2 in² copper area and careful layout to maintain T_j ≤150°C.

Is ZDT758TA RoHS compliant and halogen-free?

Yes - ZDT758TA is RoHS 2011/65/EU compliant and halogen-free per Diodes Incorporated's PPAP documentation (Rev. 1.2, 2022). Lead finish is matte tin, and packaging meets IPC/JEDEC J-STD-020 moisture sensitivity level 1.

Does ZDT758TA require external base resistors in standard switching applications?

Yes - base resistors are required to limit I_B and ensure proper saturation. For -100 mA collector current, a -10 mA base drive is needed (h_FE min = 40); using a 470 Ω resistor with -5 V logic yields -10.6 mA, satisfying this requirement while avoiding excessive base current.