Diodes Incorporated ZHB6792TA

Overview

ZHB6792TA from Zetex plc is a monolithic H-bridge bipolar transistor array comprising four matched NPN/PNP pairs in a single SM-8 (SOT-223-8) package, rated for 70 V supply, 1 A continuous collector current per transistor, and operating from −55 °C to +150 °C. It enables bidirectional DC motor control, solenoid drive, and polarity-reversal circuits in industrial actuators and automotive seat/mirror modules.

For engineers reviewing the ZHB6792TA datasheet, ZHB6792TA pinout, ZHB6792TA application, or ZHB6792TA equivalent, key selection criteria include verified V_CE(sat) ≤ 0.5 V at I_C = 1 A (NPN) and ≤ −0.5 V at I_C = −1 A (PNP), dual-transistor-on thermal derating (16 mW/°C), and confirmed SM-8 footprint compatibility with PCB copper area ≥ 2 in².

Technical Context

The ZHB6792TA integrates two complementary NPN–PNP switch pairs (Q1/Q4 and Q2/Q3) configured as a full H-bridge, supporting both high-side and low-side switching in a single die. Its bipolar architecture delivers fixed-gain current amplification (h_FE = 80–500 depending on I_C) without gate-drive complexity, unlike MOSFET-based bridges.

Thermal design requires simultaneous conduction of opposing transistors (e.g., Q1+Q4 or Q2+Q3), where total power dissipation reaches 2 W at T_amb = 25 °C and derates at 16 mW/°C - validated by transient thermal resistance curves for 100 µs–10 s pulses and dual-transistor-on steady-state curves.

Key Specifications

Pinout & Package

Package: SM-8 (8-lead SOT-223 variant), thermally optimized with exposed copper pad for PCB heat transfer; total power dissipation limited to 2 W when Q1+Q3 or Q2+Q4 conduct simultaneously.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar H-bridge bipolar transistor applications.

Compared with ZXBM5212 and ULN2068B, the ZHB6792TA provides native complementary bipolar switching at 70 V with predictable V_CE(sat) and direct logic-level base drive - ideal for cost-sensitive, thermally constrained H-bridge designs where integrated protection is not required.

Availability

ZHB6792TA is available at Aetrix Electronics and suitable for DC motor reversal control, automotive seat/mirror actuation, and industrial solenoid driver modules requiring stable component supply and long-term obsolescence management.

Supply support for ZHB6792TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex plc (now part of Diodes Incorporated) was a UK-based analog semiconductor specialist focused on high-performance discrete transistors and interface ICs for industrial and automotive markets.

The ZHB6792TA belongs to Zetex's monolithic bipolar H-bridge product line, engineered specifically for compact, thermally efficient bidirectional load control in space-constrained motor and actuator applications.

FAQ

What is the maximum safe continuous current per transistor in the ZHB6792TA?

The ZHB6792TA supports ±1 A continuous collector current per transistor when mounted on a PCB with ≥2 in² of copper area and operated within −55 °C to +150 °C junction temperature limits. Derating is required above 25 °C ambient: 16 mW/°C for dual-transistor conduction (Q1+Q3 or Q2+Q4), yielding ~1.2 A at 50 °C ambient.

Can the ZHB6792TA be used with 5 V logic-level microcontrollers without additional components?

Yes - the ZHB6792TA accepts direct 5 V CMOS logic drive on its base pins (B1–B4), provided appropriate series base resistors are used to limit I_B to 10–25 mA (for ±1 A I_C). No level shifters or charge pumps are needed, unlike MOSFET bridges requiring gate voltages >V_CC.

Does the ZHB6792TA include internal flyback diodes for inductive load protection?

No - the ZHB6792TA contains only bipolar transistors with no integrated flyback diodes. External fast-recovery diodes (e.g., 1N5819) must be connected across each motor terminal and supply rail to clamp inductive kickback during switching transitions.

How does thermal performance differ between single-transistor and dual-transistor conduction modes?

In single-transistor mode, P_tot = 1.25 W with θ_JA = 100 °C/W; in dual-transistor mode (Q1+Q3 or Q2+Q4), P_tot = 2 W with θ_JA = 62.5 °C/W - reflecting optimized heat spreading across the shared die and package. Dual-mode operation is the intended use case and validated in the datasheet's derating curves.