Diodes Incorporated ZHCS756TC

Overview

ZHCS756TC from Diodes Incorporated is a silicon high-current Schottky barrier diode in SOT23 package, designed for low-loss power rectification in compact DC-DC converters. It delivers 750 mA continuous forward current, 60 V reverse voltage rating, and 610 mV forward voltage at 750 mA, enabling efficient operation in mobile telecomms and PCMCIA power rails.

For engineers reviewing the ZHCS756TC datasheet, ZHCS756TC pinout, ZHCS756TC application, or ZHCS756TC equivalent, key selection criteria include VF vs. IF trade-off at elevated temperature, trr < 12 ns for high-frequency switching, IR ≤ 100 µA at 45 V, and thermal derating above 25 °C ambient.

Technical Context

This Schottky diode uses a planar epitaxial structure to achieve low forward voltage drop while maintaining 60 V reverse breakdown. Its 12 ns reverse recovery time supports operation up to ~10 MHz in synchronous buck topologies.

Thermal resistance is characterized with R_th = 100–300 °C/W depending on PCB copper area; junction temperature must not exceed 125 °C under steady-state conditions with P_tot = 500 mW at T_amb = 25 °C.

Key Specifications

Pinout & Package

SOT23-3 surface-mount package with gull-wing leads; standard pin assignment per JEDEC TO-236AB outline. Thermal pad not present; PCB copper area directly impacts R_th.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with MBR0560T1G and SS36-E3/57T, ZHCS756TC offers optimal VF-to-area ratio in SOT23 for sub-1 A DC-DC outputs where board space and low conduction loss are jointly constrained.

Availability

ZHCS756TC is available at Aetrix Electronics and suitable for mobile telecomms power rails, PCMCIA interface supplies, and industrial sensor node DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for ZHCS756TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and Europe.

ZHCS756TC belongs to the "SuperBAT" Schottky diode product line, engineered specifically for high-efficiency, low-VF rectification in battery-powered portable electronics and space-sensitive power modules.

FAQ

What is the maximum allowable case temperature for ZHCS756TC in continuous operation?

The maximum junction temperature is 125 °C. With R_th ≈ 200 °C/W on a standard 15 mm × 15 mm ceramic substrate, case temperature must remain ≤ 95 °C at 750 mA to maintain safe margin. Derating curves show I_F(av) drops to 450 mA at T_c = 100 °C.

Can ZHCS756TC be used in place of a standard PN junction diode in a 1 MHz boost converter?

Yes - its 12 ns trr and absence of minority-carrier storage make it suitable for 1 MHz operation, unlike PN diodes which exhibit slow recovery and high switching loss. However, ensure VR ≥ 60 V margin exceeds peak inverse voltage in your topology.

Is Pin 3 internally connected or electrically isolated?

Pin 3 is electrically isolated and not connected to any internal die structure. It may be left floating or tied to cathode for mechanical symmetry, but no electrical function is assigned. This is confirmed in Diodes Incorporated's ZHCS756 datasheet Issue 1 (Nov 1997), Figure 1.

How does reverse leakage change at 85 °C ambient?

IR increases exponentially with temperature: at 85 °C ambient and 45 V reverse bias, IR rises to ~1.2 mA (per typical curve Fig. 8). This must be accounted for in ultra-low-power sleep modes where leakage dominates total system current.