Diodes Incorporated ZNBG2000X10TC

Overview

ZNBG2000X10TC from Zetex plc is a dual-channel GaAs/HEMT FET bias controller in MSOP-10 package, generating regulated -3 V negative rail and setting 2.2 V drain voltage per channel with ±50 ppm/°C drift. It regulates drain current (0–15 mA per FET) via external RCAL resistors and provides dynamic gate protection within -3.5 V to +0.7 V range. Used in satellite LNBs for low-noise front-end biasing.

For engineers reviewing the ZNBG2000X10TC datasheet, ZNBG2000X10TC pinout, ZNBG2000X10TC application, or ZNBG2000X10TC equivalent, key selection criteria include dual-channel drain voltage accuracy (±0.2 V), gate voltage clamping limits, substrate noise performance (<0.02 Vpk-pk), thermal stability (-40°C to +80°C), and MSOP-10 footprint compatibility with RF-sensitive LNB layouts.

Technical Context

The device integrates two independent bias stages, each featuring an internal oscillator-driven charge pump to generate -3 V substrate voltage using two 47 nF external capacitors (CNB, CSUB). Drain voltage is set by an on-chip VD reference (2.2 V nominal for ZNBG2000), while drain current is precisely controlled via external RCAL resistors feeding a current-sense amplifier loop.

Gate drive circuitry enforces strict voltage limits (-3.5 V to +0.7 V) during power-up/down transients and shuts down drain supply under negative rail fault conditions. Stability is guaranteed across -40°C to +80°C when paired with recommended 4.7 nF gate (CG) and 10 nF drain (CD) capacitors.

Key Specifications

Pinout & Package

Package: MSOP-10 (3.0 mm × 3.0 mm, 0.5 mm pitch), thermally enhanced for RF-bias applications in space-constrained LNB modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar FET bias controller applications.

Compared with ZNBG2001X10TC, this part offers higher drain voltage for improved gain in low-noise LNBs; versus MAX2640EUT+T, it provides true dual-channel autonomy and on-chip negative bias-critical for high-isolation satellite front-ends.

Availability

ZNBG2000X10TC is available at Aetrix Electronics and suitable for satellite receiver LNBs, private mobile radio (PMR) systems, and C-band single-in-single-out downconverters requiring stable component supply, RF-grade thermal stability, and MSOP-10 footprint compatibility.

Supply support for ZNBG2000X10TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex plc (now part of Diodes Incorporated) was a UK-based analog semiconductor specialist focused on high-performance discrete and bias ICs for RF and power applications.

The ZNBG series was designed specifically for GaAs/HEMT FET biasing in satellite LNBs and wireless infrastructure, emphasizing RF stability, thermal robustness, and minimal external component count.

FAQ

What external components are mandatory for ZNBG2000X10TC operation?

Two 47 nF capacitors (CNB1/CNB2) for the internal -3 V charge pump oscillator and one RCAL resistor (e.g., 16 kΩ) to set drain current are mandatory. Gate (CG = 4.7 nF) and drain (CD = 10 nF) capacitors are required for RF stability and noise suppression across -40°C to +80°C.

Can unused bias channels be left unconnected?

Yes. Unused drain (D1/D2) and gate (G1/G2) pins may be left open-circuit without affecting operation of active channels. RCAL resistor must remain connected even if only one FET is used, as it sets current for both channels.

How does the device protect external FETs during power-up?

Hardware circuitry limits gate output voltage to -3.5 V to +0.7 V under all conditions-including power-up/down transients-and disables drain supply if the -3 V rail is overloaded or shorted, preventing excessive FET drain current and gate oxide stress.

Is the -3 V negative rail usable for other circuits?

Yes. The CSUB pin delivers the internally generated -3 V rail and can supply low-current external circuits (≤200 µA), such as op-amp bias networks or comparator references, provided load regulation and noise requirements are verified in-system.