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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Diodes Incorporated ZXT12N20DXTA

Name: ZXT12N20DXTA
Brand: Diodes Incorporated
SKU: ZXT12N20DXTA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXT12N20DXTA

Manufacturer:: Diodes Incorporated

Category:: Bipolar Transistor Arrays

Package:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Datasheet:: ZXT12N20DXTA.pdf

Description:: TRANS 2NPN DUAL 20V 3.5A 8-MSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ZXT12N20DXTA from Diodes Incorporated (formerly Zetex) is a dual NPN silicon low-saturation switching transistor in SuperSOT-4™ (MSOP-8) package, rated V_CEO = 20 V, I_C = 3.5 A continuous, and V_CE(sat) = 70 mV @ I_C = 0.1 A / I_B = 10 mA - optimized for high-efficiency DC-DC converters and power switches in portable and battery-powered systems.

For engineers reviewing the ZXT12N20DXTA datasheet, ZXT12N20DXTA pinout, ZXT12N20DXTA application, or ZXT12N20DXTA equivalent, key selection criteria include dual-NPN topology, ultra-low saturation voltage at low base drive, thermal resistance R_θJA = 100 °C/W (FR4), h_FE ≥ 250 @ I_C = 10 mA, and MSOP-8 footprint compatibility with space-constrained power management layouts.

Technical Context

This dual NPN transistor integrates two independent high-gain, low-V_CE(sat) die in a single MSOP-8 package, enabling compact half-bridge or dual-switch configurations without discrete pairing. Each emitter, base, and collector is separately accessible via dedicated pins, supporting independent biasing and load control.

Its matrix-based epitaxial structure delivers h_FE = 400–900 across I_C = 10 mA to 10 A, with f_T = 112 MHz and C_obo = 43 pF, allowing stable operation up to high-frequency switching (>1 MHz) while maintaining low switching losses (t_on = 65 ns, t_off = 400 ns).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	20 V - maximum safe collector-emitter voltage under open-base condition; defines upper rail limit for 3.3 V/5 V/12 V DC-DC stages.
I_C (continuous)	3.5 A - sustained current per transistor; supports >5 W load switching with minimal derating on 1 oz copper FR4.
V_CE(sat)	70 mV @ I_C=0.1A/I_B=10mA - enables <10 mW conduction loss per switch at light load, critical for standby efficiency.
h_FE	400 min @ I_C=1A - ensures robust current gain even under high-current saturation, reducing required base drive power.
f_T	112 MHz - supports clean square-wave switching up to ~10 MHz fundamental, suitable for synchronous buck controllers.
R_θJA	100 °C/W - thermal performance measured on FR4 PCB; allows ~8.3 W dissipation before T_j exceeds 150 °C at 25 °C ambient.

Pinout & Package

Package: MSOP-8 (SuperSOT-4™), JEDEC MO-187 compliant; 2.9 mm × 3.1 mm body, 0.65 mm pitch, 0.4–0.7 mm lead length, 0°–6° coplanarity.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter 1 (E1)	Emitter terminal of first NPN transistor; tied to local ground reference for low-side switch configuration.
2	Base 1 (B1)	Base input for first transistor; requires ~10–50 mA drive for full saturation depending on load current.
3	Collector 1 (C1)	Output node for first switch; connects to load anode or inductor node in buck topology.
4	Collector 2 (C2)	Output node for second transistor; electrically isolated from C1, enabling dual independent switching paths.
5	Base 2 (B2)	Base input for second transistor; decoupled from B1 to prevent crosstalk in high-speed PWM operation.
6	Emitter 2 (E2)	Emitter terminal of second NPN transistor; may be tied to same ground or separate return path for isolation.
7	NC	No connect - internal die pad not bonded; must remain unconnected per datasheet.
8	NC	No connect - internal die pad not bonded; floating or grounded per layout best practice (not functional).

Key Features

Feature	Design Value
Dual independent NPN transistors	Two fully isolated, characterized silicon die in one MSOP-8 package - eliminates matching tolerance and layout skew between discrete pairs.
Ultra-low V_CE(sat)	70 mV typical at I_C = 0.1 A - reduces conduction loss by >50% vs. standard small-signal transistors (e.g., BC847), improving light-load efficiency.
h_FE guaranteed to 10 A	Min 400 @ I_C = 1 A, min 70 @ I_C = 10 A - ensures predictable drive requirements across full operating range without gain collapse.
High f_T and low C_obo	112 MHz f_T, 43 pF C_obo - enables fast edge rates and minimal Miller effect, supporting >500 kHz PWM without gate driver overhead.

Applications

Load Switch for USB Power Delivery

Secondary-Side Synchronous Rectifier

Use Scenario: Enabling/disabling 5 V/3 A USB Type-C power path with reverse-current blocking and thermal foldback.

IC Role / Device Role: Low-side NPN switch controlling VBUS discharge path and overcurrent cutoff via base-driven saturation.

Use Value: 70 mV V_CE(sat) limits resistive loss to <210 mW at 3 A, avoiding heatsink requirement in slim-profile adapters.

Use Scenario: Replacing Schottky diode in flyback secondary for 12 V → 5 V conversion in PoE-powered IoT gateways.

IC Role / Device Role: Synchronously rectified NPN switch timed to primary MOSFET's off-cycle, driven by auxiliary winding signal.

Use Value: Reduces forward drop from 0.4 V (Schottky) to 0.07 V, cutting conduction loss by 82% and raising efficiency from 86% to 92%.

Dual-Channel Motor Driver Half-Bridge

Battery Protection Circuit Switch

Use Scenario: Driving bidirectional 24 V/1 A brushed DC motor in smart lock actuators using H-bridge formed by external PNP + ZXT12N20DXTA NPN pair.

IC Role / Device Role: Two low-saturation NPNs serve as bottom switches in complementary H-bridge; each handles 1 A continuous with independent base control.

Use Value: Dual-die integration eliminates inter-device timing mismatch, preventing shoot-through during direction reversal.

Use Scenario: Isolating Li-ion battery pack from system load during overvoltage, overtemperature, or short-circuit events.

IC Role / Device Role: High-reliability NPN switch placed in series with battery positive rail; triggered by protection IC's open-drain output.

Use Value: 20 V V_CEO and 3.5 A rating support 3S/4S battery stacks (12.6 V/16.8 V); 15 A I_CM withstands short-circuit surge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-NPN low-saturation switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZXT13N20DXTA	Same MSOP-8 package; higher I_C = 4.5 A, V_CE(sat) = 85 mV @ 1 A - slightly higher conduction loss but improved surge capability.	Preferred for 5–6 A peak-load motor drivers where transient current exceeds 3.5 A.	Select when higher pulse current margin is required without changing layout.
DMN3020LSD-13	Single-channel 30 V N-channel MOSFET in SO-8; R_DS(on) = 20 mΩ @ V_GS = 4.5 V - lower on-resistance but requires gate driver and lacks bipolar simplicity.	Suitable for high-frequency (>1 MHz) synchronous rectification where gate drive infrastructure exists.	Choose only if existing design already uses logic-level MOSFET drivers and needs sub-20 mΩ R_DS(on).

Compared with ZXT13N20DXTA, this part trades 1 A higher current rating for marginally higher V_CE(sat); versus DMN3020LSD-13, it avoids gate-drive complexity and offers superior gain-controlled turn-on in low-voltage, low-noise environments.

Availability

ZXT12N20DXTA is available at Aetrix Electronics and suitable for DC-DC converters, power management functions, and motor control applications requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.

Supply support for ZXT12N20DXTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex in 2008 and maintains its high-performance analog and discrete portfolio, focusing on power management, signal integrity, and precision components for industrial and computing markets.

ZXT12N20DXTA belongs to the Zetex SuperSOT™ low-saturation transistor family, engineered specifically for high-efficiency, low-voltage switching in space-constrained portable and battery-operated equipment.

FAQ

Is ZXT12N20DXTA pin-compatible with ZXT13N20DXTA?

Yes - both use identical MSOP-8 (SuperSOT-4™) package with matching pinout (E1, B1, C1, C2, B2, E2, NC, NC). No PCB redesign is needed when upgrading to the higher-current ZXT13N20DXTA, though base drive may require minor adjustment due to differing h_FE curves.

Can ZXT12N20DXTA be used in linear regulator pass-transistor roles?

No - it is optimized for switching operation, not linear regulation. Its low V_CE(sat) and high f_T indicate fast switching design; sustained linear operation risks thermal runaway due to limited SOA and lack of Safe Operating Area characterization beyond pulsed conditions.

What is the maximum allowable base-emitter reverse voltage (V_EBR)?

The datasheet specifies V_EBO = 7.5 V (min), tested at I_E = 100 µA. Reverse bias beyond this risks junction breakdown; for applications with potential negative base transients (e.g., inductive loads), a clamping diode from base to emitter is recommended.

Does the NC pin (Pin 7 or 8) require grounding or thermal connection?

No - Pins 7 and 8 are internally unconnected die pads. Per Zetex documentation, they must remain electrically floating. Neither grounding nor thermal connection is required or recommended; doing so may compromise package integrity or cause unintended coupling in high-frequency layouts.

ZXT12N20DXTA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 2 NPN (Dual)

Current - Collector (Ic) (Max):: 3.5A

Voltage - Collector Emitter Breakdown (Max):: 20V

Vce Saturation (Max) @ Ib, Ic:: 200mV @ 50mA, 3.5A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 1A, 2V

Power - Max:: 1.04W

Frequency - Transition:: 112MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-MSOP

ZXT12N20DXTA FAQ

1.How can I place an order for ZXT12N20DXTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXT12N20DXTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXT12N20DXTA reliable?

The price and inventory of ZXT12N20DXTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXT12N20DXTA is usually 5 days.

3.What payment methods are accepted for ZXT12N20DXTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXT12N20DXTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXT12N20DXTA?

ZXT12N20DXTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXT12N20DXTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXT12N20DXTA?

For technical support, including ZXT12N20DXTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXT12N20DXTA requirements.

6.How does Aetrix verify that ZXT12N20DXTA is sourced from the original manufacturer or authorized distributors?

All ZXT12N20DXTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXT12N20DXTA meets industry standards.

7.What is the process for return or replacement of ZXT12N20DXTA?

All ZXT12N20DXTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXT12N20DXTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXT12N20DXTA part is unused and in its original packaging.

Return procedure for ZXT12N20DXTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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