Diodes Incorporated ZXTC6717MCTA

Overview

ZXTC6717MCTA from Diodes Incorporated is a complementary dual low-saturation transistor pair in a single W-DFN3020-8 Type B package, integrating an NPN (BV_CEO > 15 V, I_C = 4.5 A) and PNP (BV_CEO > −12 V, I_C = −4 A) device optimized for high-current switching in compact DC–DC converters and motor control circuits.

For engineers reviewing the ZXTC6717MCTA datasheet, ZXTC6717MCTA pinout, ZXTC6717MCTA application, or ZXTC6717MCTA equivalent, key selection criteria include verified V_CE(sat) ≤ 100 mV @ 1 A (NPN) and ≤ −140 mV @ −1 A (PNP), R_SAT of 45 mΩ / 60 mΩ, AEC-Q101 qualification, and thermal resistance R_θJA as low as 51.0 °C/W on 10 cm² 1 oz Cu PCB.

Technical Context

This dual-transistor device implements complementary bipolar junction transistor (BJT) topology with independent emitter-base and collector-base junctions per die, enabling synchronous switching without cross-conduction risk. Each transistor supports pulsed I_CM up to ±15 A and operates across −55 °C to +150 °C junction temperature range.

Thermal design leverages exposed collector pads on both dies for low R_θJL = 17.1 °C/W and board-area-dependent derating-power dissipation scales from 1.13 W (8 cm², 2 oz Cu, one active die) to 2.45 W (same board, short-duration pulse). h_FE is characterized up to 12 A (NPN) and 10 A (PNP), supporting high-gain current amplification under heavy load.

Key Specifications

Pinout & Package

Package: W-DFN3020-8 Type B, 0.8 mm nominal height, molded green plastic with NiPdAu terminals; UL 94V-0 rated, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary BJT switching applications.

Compared with ZXTD6717MC, ZXTC6717MCTA delivers 66% lower thermal resistance and 50% smaller area; versus DMT6009LPS, it eliminates gate-drive circuitry but trades off higher conduction loss above 3 A due to fixed V_CE(sat).

Availability

ZXTC6717MCTA is available at Aetrix Electronics and suitable for DC–DC converters, motor control modules, and LED backlighting circuits requiring stable component supply, AEC-Q101 compliance, and high-current bipolar switching in ultra-thin form factors.

Supply support for ZXTC6717MCTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and consumer markets.

The ZXTC6717MCTA belongs to Diodes' low-saturation bipolar transistor product line, engineered specifically for high-efficiency, space-constrained power switching where MOSFET gate drive complexity or cost is prohibitive.

FAQ

What is the maximum continuous collector current rating for each transistor in ZXTC6717MCTA?

The NPN transistor supports 4.5 A continuous collector current (I_C) at T_A = +25°C with appropriate PCB copper area, while the PNP transistor supports −4 A. These ratings assume operation with one active die and thermal management per Note 6 (8 cm², 2 oz Cu). Derating applies above +25°C ambient.

How is pin 1 identified on the W-DFN3020-8 Type B package?

Pin 1 is marked by a dot located adjacent to corner C1 (NPN collector) on the top surface of the package. The bottom-view pinout shows C1–E1–B1–C2–E2–B2 in clockwise order starting from the dot-marked corner, with C1 and C2 sharing the same exposed collector pad underneath.

Does ZXTC6717MCTA require external base resistors for standard logic-level drive?

Yes - for reliable saturation at 1 A collector current, the NPN base requires ~10 mA drive (R_B ≈ 470 Ω with 5 V logic), and the PNP base requires ~10 mA sink (R_B ≈ 470 Ω to ground with 5 V logic high). Base resistor values must be recalculated based on actual V_BE(sat) (0.94 V NPN / −0.97 V PNP) and driver capability.

Can ZXTC6717MCTA be used in linear amplifier configurations?

No - this device is optimized for switching operation with specified V_CE(sat), safe operating area (SOA), and pulsed current limits. Its h_FE variation across current and temperature, lack of guaranteed linear region parameters, and thermal design for pulsed dissipation make it unsuitable for Class-A or AB amplifier use.