Diodes Incorporated ZXTC6718MCQTA

Overview

ZXTC6718MCQTA from Diodes Incorporated is a complementary dual low-saturation bipolar transistor pair in a single W-DFN3020-8 Type B package, integrating an NPN (BV_CEO > 20 V, I_C = 4.5 A) and PNP (BV_CEO > −20 V, I_C = −3.5 A) device with matched thermal and electrical characteristics for bidirectional switching in compact DC–DC converters and motor control circuits.

For engineers reviewing the ZXTC6718MCQTA datasheet, ZXTC6718MCQTA pinout, ZXTC6718MCQTA application, or ZXTC6718MCQTA equivalent, this AEC-Q101 qualified automotive-grade discrete offers verified low R_SAT (47 mΩ NPN / 64 mΩ PNP), 0.8 mm profile, and thermally optimized DFN packaging for high-density power management designs requiring stable gain up to 6 A and robust pulsed SOA performance.

Technical Context

The ZXTC6718MCQTA integrates electrically isolated NPN and PNP transistors on a shared die substrate within a thermally enhanced W-DFN3020-8 Type B package featuring exposed collector pads for low R_θJL (17.1 °C/W). Its complementary topology enables push-pull and H-bridge configurations without external pairing mismatches.

Each transistor supports pulsed operation up to 12 A (NPN) and −6 A (PNP) with characterized h_FE across 10 mA–6 A, V_CE(sat) specified at multiple I_C/I_B ratios, and f_T of 100 MHz (NPN) and 150 MHz (PNP), enabling efficient switching above 100 kHz in synchronous rectification and LED backlighting drivers.

Key Specifications

Pinout & Package

Package: W-DFN3020-8 Type B - 3.0 mm × 2.0 mm body, 0.8 mm nominal height, exposed collector pads on bottom for thermal enhancement, NiPdAu-plated terminals, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary low-saturation transistor applications.

Compared with ZXTD6718MCQTA and DMT6009LPS-13, ZXTC6718MCQTA uniquely delivers matched NPN/PNP saturation behavior and thermal coupling in one AEC-Q101 package-enabling simpler, more reliable half-bridge designs without external component matching or layout asymmetry penalties.

Availability

ZXTC6718MCQTA is available at Aetrix Electronics and suitable for automotive infotainment power supplies, EV battery management charging circuits, and HVAC motor control modules requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for ZXTC6718MCQTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The ZXTC6718MCQTA belongs to Diodes' AEC-Q101 qualified complementary transistor product line, engineered specifically for space-constrained, thermally demanding automotive power switching applications where matched NPN/PNP performance and thin-profile packaging are essential.

FAQ

What is the maximum continuous collector current rating for each transistor in the ZXTC6718MCQTA?

The NPN transistor supports 4.5 A continuous collector current (I_C) at T_A = +25°C with appropriate PCB copper area, while the PNP transistor supports −3.5 A under identical conditions. These ratings assume operation with one active die and 8 cm² of 2 oz copper per the datasheet's thermal test condition (Note 6).

How does the W-DFN3020-8 Type B package improve thermal performance over traditional SOT26?

The W-DFN3020-8 Type B package achieves 40% lower R_θJA than SOT26 due to its exposed collector pads directly soldered to PCB copper, reducing junction-to-ambient resistance to 83.3 °C/W (NPN) versus ~140 °C/W for SOT26. This allows 1.5 W continuous dissipation without heatsinking in standard layouts.

Is ZXTC6718MCQTA suitable for high-frequency PWM motor control above 100 kHz?

Yes - the NPN transistor has f_T = 100 MHz and the PNP has f_T = 150 MHz, with measured turn-on/turn-off times of 170 ns and 400 ns (NPN) and 40 ns and 670 ns (PNP). These values support clean switching at 200–500 kHz in motor gate drivers and synchronous rectifiers when properly biased.

Does the ZXTC6718MCQTA require special PCB layout considerations for thermal management?

Yes - the exposed collector pads (Pins 1 and 6 plus bottom thermal pads) must be connected to ≥2 cm² of 2 oz copper pour using ≥4 thermal vias (0.3 mm diameter) to achieve the rated R_θJA. The suggested pad layout is defined in Diodes' AP02001 document; insufficient copper area increases R_θJA by up to 30%.