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Diodes Incorporated ZXTD619MCTA
- Part No.:
- ZXTD619MCTA
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays
- Package:
- 8-WDFN Exposed Pad
- Datasheet:
-
ZXTD619MCTA.pdf
- Description:
- TRANS 2NPN 50V 4A W-DFN3020-8
- Quantity:
- Payment:
- Shipping:
Inventory:1,895
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Product details
Overview
ZXTD619MCTA from Diodes Incorporated is a dual NPN low-saturation switching transistor in a DFN3020B-8 package, rated for 50V VCEO, 4A continuous collector current per channel, and 100mV max VCE(sat) at 1A/50mA drive-optimized for high-efficiency DC–DC converters and MOSFET gate drivers in space-constrained portable power systems.
For engineers reviewing the ZXTD619MCTA datasheet, ZXTD619MCTA pinout, ZXTD619MCTA application, or ZXTD619MCTA equivalent, key selection criteria include dual-channel saturation voltage matching, thermal resistance (RθJA = 83.3°C/W on 28mm × 28mm FR4), AEC-Q101 qualification, and footprint compatibility with TSOP6/SOT26 replacements.
Technical Context
This dual NPN transistor integrates two independent high-current gain devices (hFE = 200–450 up to 6A) with matched saturation characteristics, enabling synchronous switching or complementary drive topologies without external balancing components.
Its DFN3020B-8 package features exposed collector pads thermally coupled to PCB copper, delivering 40% lower RθJA than SOT26 and supporting 1.5W steady-state dissipation under defined board conditions-critical for motor control and charging circuits operating near thermal limits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - supports 24V and 36V bus-level switching without derating |
| IC (cont.) | 4 A per channel - enables single-device replacement of discrete dual-transistor layouts in power switches |
| VCE(sat) max | 100 mV @ 1A/50mA - reduces conduction loss to ≤100mW per channel at 1A load |
| RθJA | 83.3 °C/W - requires ≥8 cm² 2-oz copper pour for full 1.5W power handling in still air |
| hFE | 200–450 @ IC = 10mA–6A - maintains stable current gain across wide load range for predictable base drive sizing |
| fT | 100 MHz - ensures adequate bandwidth for PWM frequencies up to 1 MHz in gate driver applications |
Pinout & Package
Package: DFN3020B-8, 3.0 mm × 2.0 mm × 0.8 mm, thermally enhanced with dual exposed collector pads (C1, C2) on underside.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (B1) | Base of first NPN | Direct base drive node; requires 50mA peak for 1A output with 100× hFE margin |
| 2 (E1) | Emiter of first NPN | Low-impedance return path; tied to local ground plane for minimal loop inductance |
| 3 (C1) | Collector of first NPN | Exposed pad - must be soldered to ≥2 cm² copper for thermal performance |
| 4 (C2) | Collector of second NPN | Second exposed pad - electrically isolated but thermally coupled to C1 pad |
| 5 (E2) | Emiter of second NPN | Independent emitter terminal; supports split-rail or floating load configurations |
| 6 (B2) | Base of second NPN | Separate control input; enables independent or paralleled channel operation |
| 7, 8 | Thermal pads (C1/C2) | Not signal pins - mandatory connection to PCB thermal plane for RθJA compliance |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN topology | Reduces PCB area by 50% vs. two SOT23 transistors; eliminates inter-device layout mismatch |
| Low RSAT = 68 mΩ | Enables <100 mW conduction loss per channel at 1A - critical for battery-powered motor control |
| AEC-Q101 qualified | Validated for automotive ambient temperature range (−55°C to +150°C) and humidity exposure |
| DFN3020B-8 footprint | Compatible with standard 0.65 mm pitch reflow profiles; no lead coplanarity issues |
| Lead-free & halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709C green material requirements |
Applications
| DC–DC Converters | MOSFET Gate Drivers |
|---|---|
Use Scenario: Step-down buck converter in portable medical monitors requiring compact 5V/3.3V rails. IC Role / Device Role / Timing Role: Low-side synchronous switch replacing Schottky diode; driven by PWM controller with 100 ns turn-on/750 ns turn-off timing. Use Value: 100 mV VCE(sat) cuts conduction loss by 65% vs. 400 mV diode drop at 1A, extending battery runtime. | Use Scenario: High-speed gate drive for 40V logic-level MOSFETs in USB-C PD power delivery modules. IC Role / Device Role / Timing Role: Active pull-down stage in totem-pole driver; fT = 100 MHz ensures clean 500 kHz switching edge integrity. Use Value: Matched dual channels allow parallel drive of high-Ciss MOSFETs while maintaining <5 ns skew between outputs. |
| Charging Circuits | Motor Control |
Use Scenario: Constant-current Li-ion charger for handheld test equipment with thermal foldback protection. IC Role / Device Role / Timing Role: Series pass transistor regulating charge current; operates in linear mode with VCE = 2–4V. Use Value: RθJA = 83.3°C/W enables 1.5W dissipation on standard FR4 - sufficient for 1.5A @ 1V drop without heatsink. | Use Scenario: H-bridge low-side driver for 12V brushed DC motors in industrial actuators. IC Role / Device Role / Timing Role: Dual-channel switch controlling direction and braking; handles 4A peak stall current per leg. Use Value: 50V VCEO rating provides 2× margin over 24V supply transients, preventing avalanche failure during inductive kick. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN switching transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTD618MCTA | Same DFN3020B-8 package; VCEO = 40V, VCE(sat) = 120 mV @ 1A - lower voltage rating, higher saturation | Not suitable for 48V bus designs; acceptable only where VIN ≤ 36V and thermal budget allows +20% loss | Select when cost sensitivity outweighs 10V headroom and 20 mV VCE(sat) penalty |
| DMN3028LSD-13 | Single-channel 30V MOSFET in SO-8; RDS(on) = 28 mΩ @ 4.5V - no bipolar gain, gate-driven, higher voltage capability | Requires level-shifting gate drive; unsuitable for linear-mode current regulation due to lack of hFE control | Prefer for high-frequency (>500 kHz) switching where gate charge and zero-threshold behavior matter more than analog linearity |
Compared with ZXTD619MCTA, ZXTD618MCTA trades voltage margin for minor cost reduction, while DMN3028LSD-13 shifts architecture from bipolar current-controlled to MOSFET voltage-controlled switching-requiring redesign of base/gate drive circuitry and sacrificing linear-region controllability.
Availability
ZXTD619MCTA is available at Aetrix Electronics and suitable for DC–DC converters, MOSFET gate drivers, and motor control applications requiring stable component supply, AEC-Q101 reliability, and compact thermal management.
Supply support for ZXTD619MCTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and consumer markets.
ZXTD619MCTA belongs to Diodes' ZXT series of low-saturation bipolar transistors, engineered specifically for high-current, low-voltage switching in thermally constrained portable and automotive power systems.
FAQ
What is the maximum safe operating temperature for ZXTD619MCTA in continuous use?
The device is rated for junction temperatures from −55°C to +150°C. Under continuous 4A operation, thermal design must limit TJ to ≤150°C using the specified RθJA = 83.3°C/W condition-requiring ≥8 cm² of 2-oz copper on FR4 with still-air convection. Derating is required above 25°C ambient.
Can ZXTD619MCTA be used in linear regulator applications?
Yes-its hFE stability up to 6A and specified VBE(sat) = 1.07V at 4A/200mA enable precise current-source or series-pass operation. However, power dissipation must stay within 1.5W (steady-state) or 2.45W (short-duration) limits per the thermal derating curves in DS31932.
Is the DFN3020B-8 package compatible with standard reflow soldering processes?
Yes-the package meets JEDEC J-STD-020 moisture sensitivity Level 1 and is qualified for standard Pb-free reflow profiles (peak 260°C). The 0.3 mm leadless terminations require stencil aperture design per IPC-7527 for reliable solder joint formation and void control.
How does the dual-channel structure affect thermal coupling between transistors?
Both dies share the same die attach and substrate, resulting in strong thermal coupling-RθJL = 17.1°C/W to the lead (collector pad) confirms shared thermal path. When both channels operate at full power, total dissipation must be limited to 1.13W (per note 8) to avoid exceeding 150°C junction temperature.
ZXTD619MCTA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 4A
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Vce Saturation (Max) @ Ib, Ic:
- 320mV @ 200mA, 4A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 300 @ 200mA, 2V
- Power - Max:
- 1.7W
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- W-DFN3020-8
ZXTD619MCTA FAQ
1.How can I place an order for ZXTD619MCTA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXTD619MCTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXTD619MCTA reliable?
The price and inventory of ZXTD619MCTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTD619MCTA is usually 5 days.
3.What payment methods are accepted for ZXTD619MCTA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTD619MCTA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXTD619MCTA?
ZXTD619MCTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXTD619MCTA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXTD619MCTA?
For technical support, including ZXTD619MCTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTD619MCTA requirements.
6.How does Aetrix verify that ZXTD619MCTA is sourced from the original manufacturer or authorized distributors?
All ZXTD619MCTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTD619MCTA meets industry standards.
7.What is the process for return or replacement of ZXTD619MCTA?
All ZXTD619MCTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXTD619MCTA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXTD619MCTA part is unused and in its original packaging.
Return procedure for ZXTD619MCTA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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