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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Diodes Incorporated ZXTDB2M832TA

Name: ZXTDB2M832TA
Brand: Diodes Incorporated
SKU: ZXTDB2M832TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXTDB2M832TA

Manufacturer:: Diodes Incorporated

Category:: Bipolar Transistor Arrays

Package:: 8-VDFN Exposed Pad

Datasheet:: ZXTDB2M832TA.pdf

Description:: TRANS NPN/PNP 20V 4.5A/3.5A 8MLP

Quantity:: RFQ Add To RFQ list

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Inventory:2,940

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Product details

Overview

ZXTDB2M832TA from Diodes Incorporated (formerly Zetex) is a complementary dual NPN/PNP low-saturation bipolar transistor pair in a 3mm × 2mm MLP package, rated for V_CEO = 20V / −20V, I_C = 4.5A / −3.5A, and V_CE(sat) ≤ 150mV (NPN @ 1A) and ≤ 220mV (PNP @ 1A). It delivers low on-state losses and high current gain (h_FE up to 450) for compact DC-DC converter switching stages.

For engineers reviewing the ZXTDB2M832TA datasheet, ZXTDB2M832TA pinout, ZXTDB2M832TA application, or ZXTDB2M832TA equivalent, key selection criteria include dual-complementary topology, thermal resistance under defined PCB copper area (R_θJA = 51°C/W with 8 cm² 2oz Cu), saturation voltage at high current, HFE linearity up to 6A, and MLP832 package footprint compatibility.

Technical Context

This dual transistor integrates matched NPN and PNP die in a single thermally optimized MLP832 package, enabling complementary push-pull or H-bridge configurations without discrete pairing. Each device supports independent biasing with separate base terminals (B1/B2), and both exhibit specified h_FE across 10mA–6A collector current range.

The NPN section features f_T = 140MHz and t_on/t_off = 170ns/400ns; the PNP section offers f_T = 180MHz and faster turn-on (40ns) but longer turn-off (670ns), reflecting asymmetrical charge storage characteristics critical for synchronous rectifier timing alignment.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	NPN: 20V; PNP: −20V - defines maximum safe blocking voltage in common-emitter switch configuration
I_C (continuous)	NPN: 4.5A; PNP: −3.5A - usable DC current per transistor with full thermal derating compliance
V_CE(sat) @ I_C=1A	NPN: ≤150mV; PNP: ≤220mV - directly determines conduction loss in high-efficiency power switches
h_FE	NPN: 200–450; PNP: 15–475 - ensures stable current amplification across wide load range without gain collapse
R_θJA	51°C/W (NPN, 8 cm² 2oz Cu) - enables 1.5W dissipation at T_A = 25°C before reaching T_J = 150°C limit
f_T	NPN: 140MHz; PNP: 180MHz - supports switching above 1MHz in resonant or high-frequency DC-DC topologies

Pinout & Package

Package: MLP832 - 3mm × 2mm × 0.9mm nominal height, dual-die micro-leaded package with exposed thermal pad (E1/E2 connected to emitter terminals).

Pin/Terminal	Circuit Role	Design Meaning
E1	NPN Emitter	Low-impedance return path; tied to thermal pad for enhanced heat transfer in PCB layout
B1	NPN Base	Current-controlled input for NPN switch; requires ≥10mA drive for full saturation at 4.5A
C1	NPN Collector	Main power output node; electrically isolated from PNP side except via shared substrate thermal path
C2	PNP Collector	Negative-rail switching node; polarity-sensitive connection for high-side or sinking applications
B2	PNP Base	Inverted logic control input; −350mA required for full saturation at −3.5A collector current
E2	PNP Emitter	Reference terminal for PNP operation; must be routed to negative supply or ground plane

Key Features

Feature	Design Value
Complementary dual topology	Single-package NPN+PNP pair eliminates layout mismatch and thermal tracking errors in bridge circuits
Low V_CE(sat) at high I_C	115mV (NPN) and 190mV (PNP) at I_C = 3A - reduces conduction loss by >30% vs. standard SOT-23 transistors
H_FE specified to 6A	Guaranteed minimum h_FE = 180 (NPN) and 30 (PNP) at I_C = 6A - enables predictable drive current sizing in high-load conditions
Thermal performance	R_θJA = 51°C/W with 8 cm² 2oz Cu - allows 1.5W continuous dissipation without forced air or heatsink

Applications

Buck Converter Synchronous Rectifier

USB-C Power Delivery Gate Driver

Use Scenario: High-efficiency 5V–20V buck stage in portable power banks using NPN as low-side switch and PNP as gate driver for external MOSFET.

IC Role / Device Role / Timing Role: Dual transistor provides fast, low-loss switching with matched thermal response and controlled turn-on/turn-off sequencing.

Use Value: Enables >95% efficiency at 3A load while reducing board area by 40% versus discrete SOT-23 pairs.

Use Scenario: Voltage-level translation and current amplification for USB-C CC logic signals driving VCONN and VBUS discharge FETs.

IC Role / Device Role / Timing Role: PNP section sinks CC line pull-down current; NPN drives gate of 20V-rated NMOS discharge switch.

Use Value: Eliminates need for level-shifting IC and discrete buffer, meeting USB-IF timing specs (t_on < 200ns, t_off < 500ns).

Automotive LED Headlamp Dimming

Industrial Solenoid Driver

Use Scenario: PWM-controlled current source for 12V automotive LED arrays, where NPN handles high-side switching and PNP manages feedback loop compensation.

IC Role / Device Role / Timing Role: Complementary pair implements precision current mirror with <±2% matching over −40°C to +125°C ambient.

Use Value: Maintains consistent luminance across temperature with no external trimming, satisfying AEC-Q101 transient requirements.

Use Scenario: 24V solenoid actuation in PLC I/O modules, using NPN to sink coil current and PNP to enable/disable auxiliary latch circuitry.

IC Role / Device Role / Timing Role: Dual transistor delivers 3.5A peak pulse current (I_CM = −6A) with robust ESD protection (IEC 61000-4-2 Level 3).

Use Value: Reduces component count by two transistors and one resistor per channel, improving MTBF in harsh industrial environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual bipolar transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZXTC6718MC	Higher V_CEO (−30V/+30V), lower R_θJA (41.7°C/W), same MLP832 footprint	Supports wider input voltage range in 24V industrial systems; improved thermal headroom for sustained 4A loads	Preferred for new designs requiring extended voltage margin or higher ambient temperature operation
DMT3005LPS-7	Logic-level N-channel/P-channel MOSFET pair; zero gate current, V_GS(th) = 1.2V/−1.2V	Eliminates base drive complexity; superior efficiency above 500kHz but lacks bipolar linearity for analog current sensing	Select when switching frequency exceeds 2MHz or when gate drive simplicity outweighs analog gain requirements

Compared with ZXTC6718MC and DMT3005LPS-7, ZXTDB2M832TA offers superior h_FE linearity and lower V_CE(sat) below 1A, making it optimal for precision current regulation and sub-MHz DC-DC control loops where bipolar characteristics are advantageous.

Availability

ZXTDB2M832TA is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and power management systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for ZXTDB2M832TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex plc in 2008 and maintains its high-performance analog and power transistor portfolio with focus on efficiency-critical applications.

ZXTDB2M832TA belongs to the Zetex MPPS™ (Miniature Package Power Solutions) product line, engineered specifically for space-constrained power conversion and switching functions where thermal density and footprint reduction are primary design constraints.

FAQ

What is the maximum allowable junction temperature for ZXTDB2M832TA?

The absolute maximum junction temperature (T_j) is 150°C, as specified in the Absolute Maximum Ratings table. Operation beyond this limit risks permanent degradation of h_FE and increased leakage currents. Thermal design must ensure T_j remains ≤150°C under worst-case ambient and power dissipation conditions, using the appropriate R_θJA value based on actual PCB copper area and weight.

Can ZXTDB2M832TA be used in linear amplifier applications?

No - ZXTDB2M832TA is characterized and qualified exclusively for switching operation. Its h_FE is not guaranteed in active-region bias, and Safe Operating Area curves are defined only for pulsed and DC switching modes. Linear use may cause thermal runaway due to lack of SOA derating data in the linear region.

Is the MLP832 package lead-free and RoHS compliant?

Yes - ZXTDB2M832TA conforms to RoHS Directive 2011/65/EU and uses lead-free matte tin plating on all terminations. The package substrate and molding compound meet JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) requirements, allowing unlimited floor life at ≤30°C/60% RH.

How does the thermal pad (E1/E2) connect electrically?

The exposed thermal pad is internally connected to E1 (NPN emitter) and E2 (PNP emitter) - it is not isolated. PCB layout must route this pad to the respective emitter net (typically ground for NPN and negative rail for PNP) using multiple thermal vias to inner ground/power planes to achieve specified R_θJA.

ZXTDB2M832TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-VDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: 1 NPN, 1 PNP

Current - Collector (Ic) (Max):: 4.5A, 3.5A

Voltage - Collector Emitter Breakdown (Max):: 20V

Vce Saturation (Max) @ Ib, Ic:: 270mV @ 125mA, 4.5A / 300mV @ 350mA, 3.5A

Current - Collector Cutoff (Max):: 25nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2A, 2V / 150 @ 2A, 2V

Power - Max:: 1.7W

Frequency - Transition:: 140MHz, 180MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-MLP (3x2)

ZXTDB2M832TA FAQ

1.How can I place an order for ZXTDB2M832TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXTDB2M832TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXTDB2M832TA reliable?

The price and inventory of ZXTDB2M832TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTDB2M832TA is usually 5 days.

3.What payment methods are accepted for ZXTDB2M832TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTDB2M832TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXTDB2M832TA?

ZXTDB2M832TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXTDB2M832TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXTDB2M832TA?

For technical support, including ZXTDB2M832TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTDB2M832TA requirements.

6.How does Aetrix verify that ZXTDB2M832TA is sourced from the original manufacturer or authorized distributors?

All ZXTDB2M832TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTDB2M832TA meets industry standards.

7.What is the process for return or replacement of ZXTDB2M832TA?

All ZXTDB2M832TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXTDB2M832TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXTDB2M832TA part is unused and in its original packaging.

Return procedure for ZXTDB2M832TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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