Diodes Incorporated ZXTDE4M832TA

Overview

ZXTDE4M832TA from Diodes Incorporated (formerly Zetex) is a dual NPN/PNP low-saturation transistor pair in a 3mm × 2mm MLP package, featuring 80V NPN and −70V PNP V_CEO, 3.5A/−2.5A continuous collector current, and ultra-low V_CE(sat) down to 145mV (NPN) and −175mV (PNP) at rated current - optimized for high-efficiency DC-DC converters and bidirectional power switches.

For engineers reviewing the ZXTDE4M832TA datasheet, ZXTDE4M832TA pinout, ZXTDE4M832TA application, or ZXTDE4M832TA equivalent, this device offers verified dual-transistor integration with thermal performance validated across multiple PCB copper configurations, precise h_FE specification up to ±5A, and documented safe operating area limits for pulse and DC operation.

Technical Context

This dual-die discrete combines complementary NPN and PNP transistors on a single 3mm × 2mm MLP substrate with electrically isolated dies and shared thermal pad. Each transistor supports independent biasing, with NPN h_FE = 200–450 (IC = 10mA–3A) and PNP h_FE = 300–470 (IC = −10mA–−3A), enabling matched gain control in push-pull or H-bridge driver stages.

Thermal resistance varies by mounting condition: R_θJA = 83.3°C/W (2oz Cu, 8 cm², one die active) to 41.7°C/W (2oz Cu, 85 cm², both dies active). Saturation voltage is characterized under pulsed conditions up to I_C = ±3.5A, with t_on/t_off of 86ns/1128ns (NPN) and 40ns/700ns (PNP) at specified drive levels.

Key Specifications

Pinout & Package

Package: MLP832 (3mm × 2mm × 0.9mm nominal height), thermally enhanced micro-leaded package with exposed thermal pad. Pin 1–3 correspond to first transistor (NPN), pins 4–6 to second (PNP), with pin 1 (B1), pin 2 (C1), pin 3 (E1), pin 4 (B2), pin 5 (C2), pin 6 (E2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN/PNP transistor applications.

Compared with ZXTC6720MC, ZXTDE4M832TA offers proven thermal stability at lower cost but limits max V_CEO to 80V/−70V; versus DMT3020LSD, it delivers predictable bipolar gain and simpler drive but higher conduction loss above 1A.

Availability

ZXTDE4M832TA is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and USB-C power delivery systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for ZXTDE4M832TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex plc in 2008 and maintains its high-performance discrete portfolio focused on power efficiency and thermal optimization.

ZXTDE4M832TA belongs to the Zetex MPPS™ (Miniature Package Power Solutions) series, engineered specifically for space-constrained power management where low saturation voltage and thermal density are critical.

FAQ

Is ZXTDE4M832TA RoHS compliant and halogen-free?

Yes. ZXTDE4M832TA meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The MLP832 package uses matte tin lead finish and green molding compound, with full compliance documentation available from Diodes Incorporated's product change notices.

What is the maximum allowable junction temperature and how is it enforced?

The absolute maximum junction temperature is 150°C, with thermal shutdown not integrated. Designers must limit power dissipation using R_θJA values from the datasheet - e.g., at 1.5W dissipation with R_θJA = 83.3°C/W, ΔT = 125°C, so T_A must stay ≤25°C to avoid exceeding T_j.

Can ZXTDE4M832TA replace discrete SOT-23 NPN/PNP pairs in existing layouts?

No direct footprint replacement: MLP832 has 6 pins in 3×2mm body versus three 3-pin SOT-23s (total ~9mm² area). However, it reduces PCB area by >60% versus two separate SOT-23s and eliminates interconnect inductance between devices - requiring new land pattern per MLP832 mechanical drawing.

Does the device support parallel operation of both transistors simultaneously?

Yes - thermal data confirms R_θJA = 73.5°C/W (10 cm² 1oz Cu) and 41.7°C/W (85 cm² 2oz Cu) for dual-die operation. Derating curves show continuous power drops from 3W to 1.7W as ambient rises from 25°C to 75°C with both dies active.