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Vishay General Semiconductor - Diodes Division 1.5KE110AHE3/51
- Part No.:
- 1.5KE110AHE3/51
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1.5KE110AHE3/51.pdf
- Description:
- TVS DIODE 94VWM 152VC 1.5KE
- Quantity:
- Payment:
- Shipping:
Inventory:6,566
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Product details
Overview
1.5KE110AHE3/51 from Vishay General Semiconductor is a uni-directional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 105 V to 116 V breakdown voltage (VBR), 94.0 V maximum working voltage (VWM), 1500 W peak pulse power rating (10/1000 µs), 9.9 A peak pulse current (IPPM), and clamps transients to ≤152 V at rated surge. It is used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.
For engineers reviewing the 1.5KE110AHE3/51 datasheet, 1.5KE110AHE3/51 pinout, 1.5KE110AHE3/51 application, or 1.5KE110AHE3/51 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C max junction temperature, 0.01 % duty cycle capability, glass-passivated junction, and RoHS-compliant HE3 suffix indicating JESD 201 Class 2 whisker resistance.
Technical Context
This TVS diode operates as a voltage-clamping device in uni-directional configuration, with cathode marked by a color band. Its silicon junction responds in <1 ns to transient overvoltages, limiting voltage across protected components during 10/1000 µs surges up to 1500 W. The device uses a molded epoxy case meeting UL 94 V-0 and exhibits low incremental surge resistance for stable clamping under repetitive stress.
Thermal performance is defined by RθJA = 75 °C/W and RθJL = 15.4 °C/W, enabling reliable operation up to 175 °C junction temperature. It supports soldering per J-STD-002 and JESD 22-B102, with matte tin-plated leads and 275 °C/10 s solder dip tolerance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 105 V to 116 V - ensures reliable conduction onset above normal operating voltage while avoiding false triggering |
| VWM | 94.0 V - maximum continuous reverse voltage the device blocks without significant leakage |
| IPPM | 9.9 A - peak surge current it safely clamps at 152 V, defining protection margin against IEC 61000-4-5 Level 4 events |
| PPPM | 1500 W - peak pulse power handling for 10/1000 µs waveform, supporting robust lightning/surge immunity |
| TJ max | +175 °C - enables deployment in under-hood automotive and high-temperature industrial environments |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
| Leakage (ID) | ≤1.0 µA at VWM - minimizes standby power loss and avoids interference in high-impedance sensing circuits |
Pinout & Package
Package: Case Style 1.5KE - axial-leaded DO-201AD molded epoxy package, 1.0 inch (25.4 mm) minimum body length, 0.375 inch (9.5 mm) lead length, UL 94 V-0 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias; connected to lower-potential side of protected circuit | Enables standard DC rail placement: anode to ground, cathode to line - critical for correct clamping polarity |
| Cathode | Current exit point in forward bias; marked by color band; connected to higher-potential side | Defines uni-directional clamping direction - must be placed on the line to be protected relative to reference ground |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable VBR tolerance and long-term reliability under thermal cycling and humidity exposure |
| 1500 W peak pulse power (10/1000 µs) | Provides single-event surge immunity exceeding IEC 61000-4-5 open-circuit test requirements for industrial equipment |
| AEC-Q101 qualification | Validates suitability for automotive powertrain, body control, and ADAS modules requiring zero-failure field performance |
| JESD 201 Class 2 whisker resistance | Eliminates risk of tin whisker growth-induced short circuits in high-reliability, long-lifetime applications |
| Low clamping ratio (VC/VBR ≈ 1.36) | Minimizes voltage overshoot during clamping - protects downstream 120 V-rated MOSFETs and gate drivers |
Applications
| Automotive Power Supply Protection | Industrial PLC I/O Module Protection |
|---|---|
|
Use Scenario: Protecting 24 V DC input rails in engine control units (ECUs) against load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Primary clamping element placed between battery rail and upstream fuse, responding within <1 ns to suppress transients before they reach regulators and microcontrollers. Use Value: Clamps 10/1000 µs surges to ≤152 V while maintaining 94 V standoff - prevents damage to 100 V-rated buck controllers and CAN transceivers. |
Use Scenario: Safeguarding analog input channels (0–10 V, 4–20 mA) in programmable logic controllers exposed to field wiring surges. IC Role / Device Role / Timing Role: Front-end transient suppressor mounted directly at terminal block, shunting induced lightning energy before signal conditioning circuitry. Use Value: Limits transient voltage to ≤152 V with <1 ns response - preserves accuracy of 16-bit ADCs and prevents latch-up in op-amp front-ends. |
| Telecom DC Feeder Protection | MOSFET Gate Driver Protection |
|
Use Scenario: Shielding -48 V DC power feeds in remote radio units (RRUs) from induced surges on outdoor cabling. IC Role / Device Role / Timing Role: Uni-directional TVS placed between feed line and DC-DC converter input, referenced to system ground. Use Value: Withstands 1500 W pulses and maintains ≤1.0 µA leakage at -48 V - avoids loading sensitive -48 V supervision circuits. |
Use Scenario: Protecting high-side N-channel MOSFET gate drivers in motor control inverters from Miller-induced voltage spikes. IC Role / Device Role / Timing Role: Clamp diode connected between gate and source, limiting dV/dt-induced overvoltage during switching transitions. Use Value: Fast <1 ns response and low clamping voltage (≤152 V) prevent gate oxide breakdown in 100 V-rated MOSFETs during hard commutation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110A | DO-214AA package (SMB), 110 V VBR, 1000 W PPPM, 7.3 A IPPM, RθJA = 60 °C/W | Lower power rating and smaller footprint - suitable for space-constrained PCBs but less robust for high-energy surges | Select SMBJ110A when board area is limited and surge threat level is ≤1 kV/42 Ω (IEC 61000-4-5 Level 3); not recommended for automotive load dump. |
| 1.5KE110CA | Bi-directional variant, same VBR range (105–116 V), identical PPPM and package, unmarked polarity | Used where AC-coupled or bidirectional signal lines (e.g., RS-485, CAN FD) require symmetrical clamping | Choose 1.5KE110CA only for AC or floating-bus applications; 1.5KE110AHE3/51 remains optimal for DC rail protection with defined polarity. |
Compared with SMBJ110A, 1.5KE110AHE3/51 delivers 50 % higher surge power handling and superior thermal dissipation in high-temperature enclosures; versus 1.5KE110CA, it provides precise unidirectional clamping essential for grounded DC systems - making it the preferred choice for automotive and industrial power rail protection.
Availability
1.5KE110AHE3/51 is available at Aetrix Electronics and suitable for automotive ECUs, industrial PLCs, telecom DC feeders, and MOSFET gate driver circuits requiring stable component supply across extended production lifecycles.
Supply support for 1.5KE110AHE3/51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The 1.5KE family was engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where failure due to voltage surges is unacceptable.
FAQ
What is the breakdown voltage tolerance for 1.5KE110AHE3/51?
The 1.5KE110AHE3/51 has a specified breakdown voltage (VBR) range of 105 V to 116 V at 1.0 mA test current, representing a ±5 % tolerance around the nominal 110 V rating. This tight tolerance ensures predictable clamping behavior across production lots and temperature ranges, critical for protecting 100 V-rated components without premature conduction during normal operation.
Is 1.5KE110AHE3/51 suitable for automotive applications?
Yes, 1.5KE110AHE3/51 is AEC-Q101 qualified and specifically rated for automotive use, including engine control units and body electronics. Its 175 °C maximum junction temperature, glass-passivated junction, and JESD 201 Class 2 whisker resistance meet stringent automotive reliability requirements. The HE3 suffix confirms compliance with automotive-grade process controls and testing protocols.
How does the clamping voltage of 1.5KE110AHE3/51 compare to its breakdown voltage?
At its rated 9.9 A peak pulse current (IPPM), the 1.5KE110AHE3/51 clamps to a maximum of 152 V - yielding a clamping ratio (VC/VBR) of approximately 1.36. This low ratio indicates efficient voltage limiting, ensuring protected components experience minimal overvoltage beyond the 110 V nominal rating - vital for safeguarding 120 V-rated MOSFETs and gate drivers.
What is the meaning of the 'HE3/51' suffix in 1.5KE110AHE3/51?
The 'HE3' suffix denotes RoHS-compliant construction with AEC-Q101 qualification and JESD 201 Class 2 whisker resistance; '51' specifies the packaging format - 13-inch paper tape and reel with 1400 units per reel. This ordering code ensures traceable, automotive-grade material with verified thermal and mechanical reliability for high-volume manufacturing.
Can 1.5KE110AHE3/51 be used in bi-directional signal protection?
No - 1.5KE110AHE3/51 is a uni-directional TVS diode, identified by its cathode band marking and specified VBR/VWM values for reverse-bias operation only. For bi-directional protection (e.g., RS-485, CAN), the pin-compatible 1.5KE110CA variant must be used; substituting 1.5KE110AHE3/51 would leave positive-going transients unclamped and risk component failure.
1.5KE110AHE3/51 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 94V
- Voltage - Breakdown (Min):
- 105V
- Voltage - Clamping (Max) @ Ipp:
- 152V
- Current - Peak Pulse (10/1000µs):
- 9.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1.5KE110AHE3/51 FAQ
1.How can I place an order for 1.5KE110AHE3/51 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1.5KE110AHE3/51 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1.5KE110AHE3/51 reliable?
The price and inventory of 1.5KE110AHE3/51 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1.5KE110AHE3/51 is usually 5 days.
3.What payment methods are accepted for 1.5KE110AHE3/51?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1.5KE110AHE3/51 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1.5KE110AHE3/51?
1.5KE110AHE3/51 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1.5KE110AHE3/51 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1.5KE110AHE3/51?
For technical support, including 1.5KE110AHE3/51 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1.5KE110AHE3/51 requirements.
6.How does Aetrix verify that 1.5KE110AHE3/51 is sourced from the original manufacturer or authorized distributors?
All 1.5KE110AHE3/51 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1.5KE110AHE3/51 meets industry standards.
7.What is the process for return or replacement of 1.5KE110AHE3/51?
All 1.5KE110AHE3/51 units undergo pre-shipment inspection (PSI). If there is an issue with 1.5KE110AHE3/51, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1.5KE110AHE3/51 part is unused and in its original packaging.
Return procedure for 1.5KE110AHE3/51:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1.5KE110AHE3/51 Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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