Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division 1.5KE11AHE3_B/C

Part No.:
1.5KE11AHE3_B/C
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-201AA, DO-27, Axial
Datasheet:
Aetrix1.5KE11AHE3_B/C.pdf
Description:
1.5KW,11V 5%,UNIDIR,AXIAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,211

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1.5KE11AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 10.5 V to 11.6 V breakdown voltage (VBR) at 1 mA, 9.4 V maximum standoff voltage (VWM), 15.6 V clamping voltage (VC) at 96.2 A peak pulse current, and 1500 W peak pulse power rating with 10/1000 µs waveform - used to safeguard MOSFETs, ICs, and sensor interfaces against inductive switching transients and ESD.

For engineers reviewing the 1.5KE11AHE3_B/C datasheet, 1.5KE11AHE3_B/C pinout, 1.5KE11AHE3_B/C application, or 1.5KE11AHE3_B/C equivalent, this device requires attention to unidirectional polarity marking (cathode band), thermal derating above 25 °C, junction temperature limits (–55 °C to +175 °C), and compatibility with JEDEC-standard 1.5KE package mounting and soldering profiles.

Technical Context

This TVS diode operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (<5 µA leakage at 9.4 V), then rapidly avalanches below 1 ns to divert transient energy when voltage exceeds VBR. Its glass-passivated junction ensures stable breakdown characteristics and low incremental surge resistance, critical for consistent clamping performance across repetitive surges.

The device complies with AEC-Q101 qualification (per note 2 in datasheet), supports 200 A non-repetitive forward surge current (8.3 ms half-sine), and exhibits a +0.075 %/°C temperature coefficient of VBR, enabling predictable behavior in automotive and industrial ambient temperature ranges.

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min/max)10.5 V / 11.6 V at 1 mA - defines precise avalanche initiation threshold for reliable overvoltage detection
VWM9.4 V - maximum continuous operating voltage before leakage rises above 5 µA
VC @ IPPM15.6 V at 96.2 A - clamped voltage during 10/1000 µs transient, limiting stress on downstream components
PPPM1500 W - peak transient power handling capacity, enabling protection against lightning-induced surges per REA PE-60
TJ range–55 °C to +175 °C - supports operation in under-hood automotive and industrial environments without derating loss
PackageJEDEC 1.5KE - axial-leaded DO-201AD outline with 0.375" lead length, compatible with through-hole wave soldering
QualificationAEC-Q101 qualified (HE3 suffix) - validated for automotive electronics per stress test requirements

Pinout & Package

Package: JEDEC DO-201AD (Case Style 1.5KE), molded epoxy body with matte tin-plated leads; cathode indicated by color band on unidirectional types.

Pin/TerminalCircuit RoleDesign Meaning
AnodeCurrent entry point during forward conductionConnected to lower-potential side of protected line; not used in normal TVS operation
CathodeClamping node during reverse-biased transientMarked with band; connects to protected line - conducts avalanche current to ground when V > VBR

Key Features

FeatureDesign Value
Glass-passivated junctionEnsures stable VBR tolerance and long-term reliability under thermal cycling and humidity
1500 W peak pulse power (10/1000 µs)Provides robust protection against IEC 61000-4-5 Level 4 surges without degradation
0.075 %/°C VBR tempcoMinimizes drift in clamping threshold across –40 °C to +125 °C operating range
AEC-Q101 qualified (HE3)Validated for automotive powertrain and body electronics per stress test requirements
Low incremental surge resistanceReduces VC overshoot during fast-rising transients, improving protection margin for 3.3 V/5 V logic

Applications

Automotive Power Supply ProtectionIndustrial Sensor Interface Protection

Use Scenario: Protecting 12 V battery-fed ECUs from load-dump and alternator ripple transients.

IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between VBAT and chassis ground to clamp spikes up to 15.6 V.

Use Value: Prevents latch-up or gate oxide damage in MCU power inputs and CAN transceivers during ISO 7637-2 Pulse 5a events.

Use Scenario: Safeguarding 4–20 mA current-loop sensors connected to PLC analog inputs.

IC Role / Device Role / Timing Role: Standoff-connected TVS on signal line to suppress induced surges from nearby motor drives.

Use Value: Maintains signal integrity below 15.6 V clamping level while tolerating 96.2 A transient current without failure.

Consumer Power Adapter OutputTelecom Line Card Surge Protection

Use Scenario: Secondary-side overvoltage protection on 5 V/9 V USB-C PD adapter outputs.

IC Role / Device Role / Timing Role: Fast-response shunt element absorbing ESD and capacitive discharge transients.

Use Value: Clamps within <1 ns to limit output voltage excursion to 15.6 V, protecting downstream USB controllers and PMICs.

Use Scenario: Primary protection on RJ-45 Ethernet PHY interface lines exposed to lightning-induced surges.

IC Role / Device Role / Timing Role: First-stage TVS on differential pair before common-mode choke and integrated magnetics.

Use Value: Handles 1500 W peak pulse energy per IEC 61000-4-5, reducing stress on secondary protection devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ11ADO-214AA package (SMB), 11.1 V VBR, 18.2 V VC @ 65.1 A, 600 W PPPMLower power rating and higher clamping voltage; suited for space-constrained PCBs with moderate surge exposureSelect SMBJ11A only if board layout requires surface-mount and system-level surge energy is ≤600 W
1.5KE11CABidirectional variant, same VBR/VC specs but symmetrical clamping in both polaritiesRequired for AC-coupled or floating signal lines where polarity reversal may occur (e.g., RS-485, audio)Choose 1.5KE11CA only when bidirectional protection is mandated - 1.5KE11AHE3_B/C is unidirectional and not interchangeable

Compared with SMBJ11A, the 1.5KE11AHE3_B/C delivers 2.5× higher surge power handling and tighter clamping, making it suitable for harsher environments; versus 1.5KE11CA, it offers lower cost and simpler polarity-aware placement but cannot protect AC signals.

Availability

1.5KE11AHE3_B/C is available at Aetrix Electronics and suitable for automotive ECU design, industrial sensor interface development, and telecom line card prototyping requiring stable component supply and AEC-Q101-compliant surge protection.

Supply support for 1.5KE11AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global supplier of discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and automotive-grade qualification.

The 1.5KE series was developed for high-energy transient suppression in demanding DC power and signal line applications, targeting automotive, industrial, and telecom infrastructure where 1500 W surge immunity and AEC-Q101 compliance are mandatory.

FAQ

What is the breakdown voltage tolerance for the 1.5KE11AHE3_B/C?

The 1.5KE11AHE3_B/C has a specified breakdown voltage range of 10.5 V to 11.6 V at 1 mA test current, representing ±5.5% tolerance around the nominal 11 V rating. This tight VBR window ensures consistent triggering behavior across production lots and temperature extremes, critical for predictable clamping in safety-critical circuits.

Is the 1.5KE11AHE3_B/C suitable for automotive applications?

Yes, the 1.5KE11AHE3_B/C is AEC-Q101 qualified (as confirmed in datasheet note 2 for HE3_B variants), making it suitable for automotive powertrain, body control, and infotainment systems. Its –55 °C to +175 °C operating range, glass-passivated junction, and validated surge performance meet stringent automotive reliability requirements.

How does the clamping voltage of the 1.5KE11AHE3_B/C compare to its standoff voltage?

The 1.5KE11AHE3_B/C has a maximum standoff voltage (VWM) of 9.4 V and a clamping voltage (VC) of 15.6 V at 96.2 A. This 6.2 V headroom ensures reliable blocking during normal operation while limiting transient overvoltage to a safe margin below typical 16 V absolute maximum ratings of 12 V rail ICs.

What is the thermal resistance of the 1.5KE11AHE3_B/C, and how does it affect power dissipation?

The 1.5KE11AHE3_B/C has a typical junction-to-lead thermal resistance (RθJL) of 15.4 °C/W and junction-to-ambient (RθJA) of 75 °C/W. With a 6.5 W steady-state power rating at TL = 75 °C, effective heatsinking via PCB copper pour or lead length optimization is essential to maintain TJ ≤ 175 °C during repeated surges.

Can the 1.5KE11AHE3_B/C be used in parallel to increase surge current handling?

While the 1.5KE11AHE3_B/C datasheet notes TVS diodes can be used in parallel to increase peak power ratings, doing so requires matched VBR units and current-sharing resistors to prevent thermal runaway. For most designs, selecting a higher-rated single device (e.g., 1.5KE12A or 1.5KE13A) is preferred over paralleling 1.5KE11AHE3_B/C units.

1.5KE11AHE3_B/C Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-201AA, DO-27, Axial
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
9.4V
Voltage - Breakdown (Min):
10.5V
Voltage - Clamping (Max) @ Ipp:
15.6V
Current - Peak Pulse (10/1000µs):
100A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
1.5KE

1.5KE11AHE3_B/C FAQ

1.How can I place an order for 1.5KE11AHE3_B/C through Aetrix?

Please submit a Request for Quotation (RFQ) for 1.5KE11AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1.5KE11AHE3_B/C reliable?

The price and inventory of 1.5KE11AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1.5KE11AHE3_B/C is usually 5 days.

3.What payment methods are accepted for 1.5KE11AHE3_B/C?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1.5KE11AHE3_B/C transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1.5KE11AHE3_B/C?

1.5KE11AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1.5KE11AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1.5KE11AHE3_B/C?

For technical support, including 1.5KE11AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1.5KE11AHE3_B/C requirements.

6.How does Aetrix verify that 1.5KE11AHE3_B/C is sourced from the original manufacturer or authorized distributors?

All 1.5KE11AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1.5KE11AHE3_B/C meets industry standards.

7.What is the process for return or replacement of 1.5KE11AHE3_B/C?

All 1.5KE11AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1.5KE11AHE3_B/C, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1.5KE11AHE3_B/C part is unused and in its original packaging.

Return procedure for 1.5KE11AHE3_B/C:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1.5KE11AHE3_B/C Tags

  • 1.5KE11AHE3_B/C
  • 1.5KE11AHE3_B/C PDF
  • 1.5KE11AHE3_B/C Datasheet
  • 1.5KE11AHE3_B/C Specifications
  • 1.5KE11AHE3_B/C Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division 1.5KE11AHE3_B/C
  • Buy 1.5KE11AHE3_B/C
  • 1.5KE11AHE3_B/C Price
  • 1.5KE11AHE3_B/C Distributor
  • 1.5KE11AHE3_B/C Supplier
  • 1.5KE11AHE3_B/C Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER