My Inquiry
My Account
Vishay General Semiconductor - Diodes Division 1.5KE7.5AHE3/51
- Part No.:
- 1.5KE7.5AHE3/51
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1.5KE7.5AHE3/51.pdf
- Description:
- TVS DIODE 6.4VWM 11.3VC 1.5KE
- Quantity:
- Payment:
- Shipping:
Inventory:7,997
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1.5KE7.5AHE3/51 from Vishay General Semiconductor is a uni-directional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 7.13 V to 7.88 V breakdown voltage (VBR) at 10 mA, 6.40 V maximum stand-off voltage (VWM), 11.3 V clamping voltage (VC) at 133 A peak pulse current, 1500 W peak pulse power rating (10/1000 µs), and AEC-Q101 qualification for automotive-grade reliability.
For engineers reviewing the 1.5KE7.5AHE3/51 datasheet, 1.5KE7.5AHE3/51 pinout, 1.5KE7.5AHE3/51 application, or 1.5KE7.5AHE3/51 equivalent, this device serves as a robust, fast-response (≤1 ns), glass-passivated TVS for protecting MOSFETs, microcontrollers, and sensor interfaces against lightning-induced surges, inductive switching transients, and ESD events in automotive and industrial systems.
Technical Context
The 1.5KE7.5AHE3/51 operates as a uni-directional avalanche diode with a cathode-marked epoxy package, leveraging silicon junction technology to clamp transient overvoltages before they reach downstream ICs. Its 1500 W peak pulse power handling and low incremental surge resistance ensure effective energy diversion during 10/1000 µs waveform events.
It exhibits a maximum reverse leakage of 500 µA at 6.40 V VWM, a temperature coefficient of breakdown voltage of +0.061 %/°C, and thermal resistance of 15.4 °C/W (junction-to-lead), enabling stable operation up to 175 °C junction temperature under pulsed conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 7.13 V / 7.88 V at 10 mA - defines precise voltage threshold at which avalanche conduction begins, critical for accurate system-level overvoltage trip point alignment |
| VWM | 6.40 V - maximum continuous reverse operating voltage; must exceed normal circuit operating voltage to prevent leakage or false triggering |
| VC @ IPPM | 11.3 V at 133 A - clamped voltage seen by protected circuit during full-rated 1500 W transient; determines worst-case stress on downstream components |
| PPPM | 1500 W (10/1000 µs) - peak transient energy absorption capability; enables protection against severe lightning and load-dump events |
| IFSM | 200 A (8.3 ms half-sine) - surge current withstand without failure; supports high-energy inductive switch-off protection |
| TJ max. | 175 °C - maximum junction temperature; allows reliable operation in under-hood automotive and high-ambient industrial environments |
| AEC-Q101 | Qualified - confirms compliance with automotive-grade stress testing including HTGB, HTRB, and temperature cycling for long-term field reliability |
Pinout & Package
Package: Case Style 1.5KE - molded epoxy body with matte tin-plated leads; RoHS-compliant and AEC-Q101 qualified (HE3 suffix); polarity indicated by cathode band; lead length 0.375" (9.5 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / transient return path | Connected to ground or low-side reference; completes clamping loop during positive transients on cathode side |
| Cathode | Protected line connection / transient input | Connected to the line being protected (e.g., 5 V rail, CAN_H); avalanche conduction initiates here during overvoltage |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated chip junction | Ensures stable, repeatable avalanche characteristics and long-term reliability under repeated surge stress |
| 1500 W peak pulse power (10/1000 µs) | Supports EN 61000-4-5 Level 4 (4 kV) surge immunity without derating in properly designed layouts |
| Response time ≤1 ns | Clamps transients before sensitive CMOS inputs can be damaged - faster than MOVs or GDTs |
| AEC-Q101 qualification | Validates suitability for automotive powertrain, body control, and ADAS modules requiring zero-failure field performance |
| Low incremental surge resistance | Minimizes VC overshoot during high-di/dt events, reducing voltage stress on protected ICs |
Applications
| Automotive Power Supply Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 5 V and 12 V MCU power rails in engine control units (ECUs) against load dump and jump-start transients. IC Role / Device Role / Timing Role: Primary clamping device placed at power entry point; conducts only during >6.4 V overvoltage events. Use Value: Limits rail voltage to ≤11.3 V during 133 A surges, preventing latch-up or gate oxide damage in automotive-grade microcontrollers. |
Use Scenario: Safeguarding analog front-end inputs of pressure/temperature sensors connected to long harnesses in factory automation. IC Role / Device Role / Timing Role: Uni-directional TVS placed between sensor output and ADC input; suppresses ESD and cable-coupled noise. Use Value: Clamps 8 kV contact ESD (IEC 61000-4-2) within <1 ns, preserving signal integrity and eliminating calibration drift from transient-induced offset shifts. |
| DC Motor Drive Gate Protection | Telecom Line Surge Suppression |
Use Scenario: Shielding N-channel MOSFET gates in brushed DC motor drivers from inductive kickback during PWM switching. IC Role / Device Role / Timing Role: Low-capacitance (<100 pF) TVS tied between gate and source; activated only during VGS overvoltage. Use Value: Prevents gate oxide rupture by limiting VGS to ≤11.3 V, even during 100 V/µs dV/dt events from flyback spikes. |
Use Scenario: Front-end protection for RS-485 transceivers in outdoor telecom cabinets exposed to induced lightning surges. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential bus lines (A/B), coordinated with common-mode chokes. Use Value: Absorbs 1500 W common-mode surges per IEC 61000-4-5, maintaining data integrity and avoiding transceiver latch-up or burnout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ7.0A | Lower PPPM (600 W), smaller SMB package (vs. DO-201AB), higher VC (12.0 V @ 53.3 A) | Better suited for space-constrained consumer electronics; insufficient for automotive load dump per ISO 7637-2 Pulse 5a | Select when board area is critical and surge energy is limited to ≤600 W; verify layout thermal relief for SMB footprint |
| 1.5KE7.5A-E3/54 | Same electrical specs and DO-201AB package; differs only in packaging format (tape-and-reel vs. bulk/ammopack) | No functional difference; identical performance and qualification status (RoHS, commercial grade only) | Choose for automated SMT assembly where 13" tape-and-reel delivery is required; no design or reliability impact |
Compared with SMBJ7.0A and 1.5KE7.5A-E3/54, the 1.5KE7.5AHE3/51 uniquely combines AEC-Q101 qualification, 1500 W surge capacity, and DO-201AB mechanical robustness-making it the only option among the three validated for under-hood automotive use with full load-dump immunity.
Availability
1.5KE7.5AHE3/51 is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, DC motor controllers, and telecom interface modules requiring stable component supply across extended production lifecycles.
Supply support for 1.5KE7.5AHE3/51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The 1.5KE series was engineered specifically for high-energy transient suppression in harsh environments, emphasizing AEC-Q101 compliance, repeatable clamping, and robust thermal performance in legacy through-hole packages.
FAQ
What is the breakdown voltage tolerance for 1.5KE7.5AHE3/51?
The 1.5KE7.5AHE3/51 has a specified breakdown voltage range of 7.13 V to 7.88 V at 10 mA test current, representing ±5.2% tolerance around the nominal 7.5 V rating. This tight VBR window ensures consistent clamping behavior across production lots and supports precise overvoltage margining in safety-critical designs.
Is 1.5KE7.5AHE3/51 suitable for bi-directional transient protection?
No - the 1.5KE7.5AHE3/51 is strictly a uni-directional TVS diode, identified by the "A" suffix and cathode band marking. For bi-directional protection, Vishay offers the 1.5KE7.5CAHE3/51 variant. Using the uni-directional 1.5KE7.5AHE3/51 on AC or floating lines may result in forward conduction and failure during negative transients.
What does the "HE3" suffix indicate on 1.5KE7.5AHE3/51?
The "HE3" suffix on 1.5KE7.5AHE3/51 denotes RoHS-compliant construction with AEC-Q101 qualification and JESD 201 Class 2 whisker resistance. It distinguishes this automotive-grade version from the commercial-only "E3" variant (e.g., 1.5KE7.5A-E3/54), confirming enhanced reliability for automotive and industrial applications.
How does the clamping voltage of 1.5KE7.5AHE3/51 compare to its breakdown voltage?
The 1.5KE7.5AHE3/51 clamps at 11.3 V when subjected to its rated 133 A peak pulse current (IPPM), which is approximately 50% above its minimum breakdown voltage of 7.13 V. This VC/VBR ratio of ~1.58 reflects low dynamic impedance and efficient energy absorption - critical for limiting stress on downstream 5 V or 3.3 V logic devices.
Can 1.5KE7.5AHE3/51 be used in parallel for higher surge current handling?
While the 1.5KE7.5AHE3/51 datasheet notes TVS diodes can be used in parallel to increase peak power ratings, doing so requires careful layout: matched trace lengths, symmetrical thermal paths, and individual current-limiting resistors to ensure balanced sharing. Without these, one device may hog current and fail prematurely - consult Vishay Application Note AN999 for validated parallel configurations.
1.5KE7.5AHE3/51 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.4V
- Voltage - Breakdown (Min):
- 7.13V
- Voltage - Clamping (Max) @ Ipp:
- 11.3V
- Current - Peak Pulse (10/1000µs):
- 133A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1.5KE7.5AHE3/51 FAQ
1.How can I place an order for 1.5KE7.5AHE3/51 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1.5KE7.5AHE3/51 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1.5KE7.5AHE3/51 reliable?
The price and inventory of 1.5KE7.5AHE3/51 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1.5KE7.5AHE3/51 is usually 5 days.
3.What payment methods are accepted for 1.5KE7.5AHE3/51?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1.5KE7.5AHE3/51 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1.5KE7.5AHE3/51?
1.5KE7.5AHE3/51 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1.5KE7.5AHE3/51 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1.5KE7.5AHE3/51?
For technical support, including 1.5KE7.5AHE3/51 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1.5KE7.5AHE3/51 requirements.
6.How does Aetrix verify that 1.5KE7.5AHE3/51 is sourced from the original manufacturer or authorized distributors?
All 1.5KE7.5AHE3/51 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1.5KE7.5AHE3/51 meets industry standards.
7.What is the process for return or replacement of 1.5KE7.5AHE3/51?
All 1.5KE7.5AHE3/51 units undergo pre-shipment inspection (PSI). If there is an issue with 1.5KE7.5AHE3/51, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1.5KE7.5AHE3/51 part is unused and in its original packaging.
Return procedure for 1.5KE7.5AHE3/51:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1.5KE7.5AHE3/51 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
