Microchip Technology 1N5629A

Overview

1N5629A from Microchip (formerly Microsemi) is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, rated for 1500 W peak pulse power at 10/1000 µs, with 5.5 V rated standoff voltage (VWM), 6.12–6.45 V breakdown voltage (V_BR), and 10.5–10.8 V clamping voltage (V_C) at 139–143 A peak pulse current - used for ESD, EFT, and secondary lightning protection in avionics and industrial control systems.

For engineers reviewing the 1N5629A datasheet, 1N5629A pinout, 1N5629A application, or 1N5629A equivalent, this page delivers verified electrical specs, military-grade qualification context (JANTXV-compatible), DO-13 mechanical details, IEC 61000-4-2/-4-4/-4-5 compliance scope, and real-world selection guidance for high-reliability surge suppression.

Technical Context

The 1N5629A operates as a unidirectional avalanche diode, entering controlled breakdown when transient voltage exceeds its 5.5 V standoff level (VWM), clamping to ≤10.8 V within <100 ps to protect downstream circuitry. Its DO-13 metal-glass package provides hermetic sealing and radiation hardness per MicroNote 050.

It supports operation from –55°C to +175°C, with thermal resistance of 50°C/W junction-to-lead (at 10 mm lead length) and 110°C/W junction-to-ambient on FR4. Forward surge rating is 200 A (8.3 ms half-sine), and standby leakage is ≤1000 µA at VWM.

Key Specifications

Pinout & Package

DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically bonded to case and marked by diode symbol on body. Lead length ≥1.000″, case diameter 0.215–0.235″, weight ≈1.4 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMBJ5.0A and 1N5629, the 1N5629A uniquely combines hermetic DO-13 packaging, radiation hardness, JANTXV qualification readiness, and 1500 W surge capacity - making it the sole option for mission-critical aerospace, defense, and medical systems requiring guaranteed long-term parametric stability and environmental resilience.

Availability

1N5629A is available at Aetrix Electronics and suitable for aerospace power distribution, industrial PLC I/O protection, medical imaging power rails, and military vehicle data buses requiring stable component supply, full traceability, and long-lifecycle support.

Supply support for 1N5629A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology acquired Microsemi in 2018 and maintains its high-reliability analog and discrete product portfolio, including radiation-hardened and military-qualified components for aerospace, defense, and industrial markets.

The 1N5629A belongs to Microchip's legacy TVS diode family designed specifically for high-energy transient suppression in safety-critical systems - emphasizing hermeticity, wide temperature operation, and compliance with MIL-PRF-19500 and IEC 61000-4-x standards.

FAQ

What is the standoff voltage (VWM) specification for the 1N5629A?

The 1N5629A has a rated standoff voltage (VWM) of 5.5 V, meaning it remains nonconductive under continuous reverse bias up to this level. This value is selected to match nominal 5 V DC systems while providing margin against ripple and tolerance drift. Exceeding VWM initiates avalanche clamping, so proper system voltage alignment is essential for reliable 1N5629A operation.

Does the 1N5629A have military qualification, and what does the "A" suffix signify?

Yes - the "A" suffix in 1N5629A indicates tighter breakdown voltage tolerance (6.12–6.45 V vs. 6.12–7.48 V for non-A variants) and eligibility for JAN, JANTX, or JANTXV prefixing per MIL-PRF-19500/500. The 1N5629A itself is not pre-certified but serves as the base qualified die for those military-grade versions, enabling full screening and traceability when ordered with appropriate prefixes.

How does the DO-13 package of the 1N5629A differ from plastic TVS diodes like the 1N6267 series?

The 1N5629A uses a hermetically sealed DO-13 metal-glass package, whereas the 1N6267 series employs plastic axial-leaded construction. The DO-13 offers superior moisture resistance, radiation hardness, thermal conductivity (50°C/W junction-to-lead), and long-term parameter stability - critical for aerospace and defense. Plastic alternatives lack hermeticity and MIL-PRF-19500 compliance, limiting their use to commercial applications.

What IEC standards does the 1N5629A support for transient immunity testing?

The 1N5629A supports IEC 61000-4-2 (ESD ±8 kV contact/±15 kV air), IEC 61000-4-4 (EFT ±2 kV), and IEC 61000-4-5 (surge: Class 1–4 with 2–42 Ω source impedance). Its <100 ps response and 1500 W rating enable compliance across all classes for 5 V systems - confirmed in the datasheet's secondary lightning protection tables for 1N5629 through 1N5665A devices.

Can the 1N5629A be used in bidirectional configurations?

No - the 1N5629A is strictly unidirectional. Its cathode is internally bonded to the metal case, and polarity is marked by a diode symbol on the body. For bidirectional protection in the same DO-13 footprint, Microchip specifies the separate 1N6036–1N6072A series. Attempting to use 1N5629A in reverse-biased mode will result in forward conduction and failure to clamp positive transients.