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Microchip Technology 1N5632A/TR
- Part No.:
- 1N5632A/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-13
- Datasheet:
-
1N5632A/TR.pdf
- Description:
- TVS DIODE 7.78VWM 13.4VC DO13
- Quantity:
- Payment:
- Shipping:
Inventory:9,069
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Product details
Overview
1N5632A/TR from Microchip Technology is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-reliability surge protection in aerospace and industrial systems. It features a 7.37 V rated standoff voltage (VWM), 8.19 V minimum breakdown voltage (V(BR)) at 1 mA, 13.4 V maximum clamping voltage (VC) at 112 A peak pulse current, and 1500 W peak pulse power rating per 10/1000 µs waveform.
For engineers reviewing the 1N5632A/TR datasheet, 1N5632A/TR pinout, 1N5632A/TR application, or 1N5632A/TR equivalent, this device serves as a military-grade, through-hole TVS solution for secondary lightning protection (IEC61000-4-5 Class 4 with 42 Ω source), ESD/EFT immunity (IEC61000-4-2/-4), and inductive switching transient suppression in avionics power rails and ruggedized control interfaces.
Technical Context
The 1N5632A/TR operates as a unidirectional avalanche diode, clamping transients within <100 ps by entering controlled reverse breakdown above its VWM. Its DO-13 metal-glass package provides hermetic sealing and inherent radiation hardness per MicroNote 050, supporting operation from –55°C to +175°C.
It delivers 1500 W peak pulse power at TL = 25°C with 10/1000 µs waveform, and maintains stable clamping performance across temperature due to a +0.068%/°C breakdown voltage temperature coefficient. The cathode is internally connected to the case, enabling direct chassis grounding for low-inductance transient shunting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.37 V - Standoff voltage ensuring non-conduction during normal 7.37 V DC or peak operating conditions |
| V(BR) min | 8.19 V @ 1 mA - Minimum avalanche initiation voltage, guaranteeing reliable turn-on above system operating margin |
| VC max | 13.4 V @ 112 A - Maximum clamped voltage during 10/1000 µs surge, limiting downstream IC stress to safe levels |
| PPP | 1500 W - Peak pulse power handling capability, sufficient for IEC61000-4-5 Class 4 (42 Ω) secondary lightning events |
| Response time | <100 ps - Near-instantaneous clamping enables effective ESD (IEC61000-4-2) and EFT (IEC61000-4-4) protection |
| Package | DO-13 (DO-202AA) - Hermetically sealed metal-glass case with cathode-to-case connection for low-inductance chassis grounding |
| Operating temp | –55°C to +175°C - Extended thermal range supports deployment in engine bays, avionics bays, and downhole electronics |
Pinout & Package
DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically bonded to case and marked with diode symbol on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Transient input node | Connected to protected line; carries surge current into device during overvoltage event |
| Cathode (Lead 1 / Case) | Clamp reference & ground path | Internally tied to metal case; must be connected directly to low-impedance chassis ground for optimal clamping performance |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional TVS architecture | Enables precise clamping on positive-going transients while maintaining high impedance during normal forward-biased operation |
| 1500 W peak pulse power (10/1000 µs) | Supports robust protection against severe inductive switching surges and secondary lightning events per IEC61000-4-5 |
| Hermetic DO-13 metal package | Provides long-term reliability in high-humidity, high-vibration, and radiation-prone environments including airborne avionics |
| Military qualification ready (JANTXV prefix) | "A" suffix denotes tighter parameter tolerances; compatible with MIL-PRF-19500/500 screening when ordered as JANTXV1N5632A |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050, eliminating need for external radiation hardening in space-qualified subsystems |
Applications
| Aerospace Power Distribution | Industrial Motor Drive Controls |
|---|---|
Use Scenario: Protection of 28 V DC aircraft bus feeders against load dump and inductive kickback from solenoid actuators. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between bus rail and chassis ground to shunt transients before they reach upstream regulators and flight computers. Use Value: Limits transient voltage to ≤13.4 V during 112 A surges, preventing latch-up or damage to MIL-STD-704-compliant power management ICs. |
Use Scenario: Surge suppression on gate drive signal lines feeding IGBTs in variable-frequency motor drives subject to EFT noise and commutation spikes. IC Role / Device Role / Timing Role: Fast-response TVS placed at controller output to absorb sub-100 ns EFT bursts per IEC61000-4-4 Level 4. Use Value: Sub-100 ps response ensures clamping occurs before gate oxide breakdown thresholds are exceeded on sensitive driver ICs. |
| Avionics Data Bus Interfaces | Ruggedized Railway Signaling |
Use Scenario: Secondary lightning protection on ARINC 429 receive inputs exposed to induced RF coupling from nearby radar transmitters. IC Role / Device Role / Timing Role: Standoff-clamp TVS installed inline with differential receiver inputs to limit common-mode surge energy entering the interface IC. Use Value: 7.37 V VWM matches typical ARINC 429 logic thresholds, while 13.4 V VC prevents saturation of input comparators during 42 Ω IEC61000-4-5 Class 4 events. |
Use Scenario: Transient protection on 72 V DC signaling circuits in train control systems subjected to traction current switching surges and track-induced lightning coupling. IC Role / Device Role / Timing Role: Through-hole TVS mounted directly at connector entry point to divert surge current to chassis before entering PCB-level isolation barriers. Use Value: DO-13 metal package withstands mechanical shock and thermal cycling per EN 50155, ensuring long-term integrity in rolling stock environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5632A | No tape-and-reel packaging; lead-forming required for automated assembly | Suitable for manual or semi-automated insertion where reel-fed placement is not needed | Select 1N5632A/TR when using pick-and-place machines; choose 1N5632A for prototyping or low-volume hand-soldered builds |
| SMBJ7.5A | Surface-mount SMB package; 7.5 V VWM; 1000 W PPP; 12.5 V VC @ 84.5 A | Limited to lower-energy transients; not hermetically sealed or radiation-hardened | Choose SMBJ7.5A only for commercial-grade, space-constrained PCBs where DO-13 mounting is impractical and radiation tolerance is unnecessary |
Compared with 1N5632A/TR, the 1N5632A lacks tape-and-reel convenience but offers identical electrical specs, while SMBJ7.5A trades hermeticity, radiation hardness, and 50% higher pulse power for surface-mount compatibility-making it unsuitable for avionics or harsh-environment deployments requiring MIL-qualified reliability.
Availability
1N5632A/TR is available at Aetrix Electronics and suitable for aerospace power distribution, industrial motor drive controls, avionics data bus interfaces, and ruggedized railway signaling requiring stable component supply across extended temperature and radiation-exposed environments.
Supply support for 1N5632A/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology (formerly Microsemi) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N5632A/TR belongs to Microchip's legacy TVS diode family engineered for mission-critical transient suppression in military and aviation systems, emphasizing hermetic packaging, wide temperature operation, and compliance with MIL-PRF-19500/500 screening standards.
FAQ
What is the standoff voltage (VWM) specification for the 1N5632A/TR?
The 1N5632A/TR has a rated standoff voltage (VWM) of 7.37 V, meaning it remains non-conductive under continuous reverse bias up to this voltage level. This value is selected to match nominal 28 V DC aircraft bus systems while providing sufficient margin above normal operating peaks. The VWM is guaranteed per JEDEC test conditions at TA = 25°C and is critical for ensuring the 1N5632A/TR does not conduct during steady-state operation.
How does the 1N5632A/TR achieve its <100 ps response time?
The 1N5632A/TR achieves sub-100 ps response via its optimized silicon junction design and low-parasitic DO-13 metal-glass package, which minimizes junction capacitance and lead inductance. Unlike slower MOVs or polymer-based protectors, the 1N5632A/TR relies on avalanche breakdown physics-triggering inherently fast conduction once V(BR) is exceeded. This enables effective suppression of ESD events per IEC61000-4-2 and nanosecond-scale EFT bursts without delay.
Is the 1N5632A/TR suitable for IEC61000-4-5 secondary lightning testing?
Yes, the 1N5632A/TR is explicitly rated for IEC61000-4-5 secondary lightning protection up to Class 4 with 42 Ω source impedance, as confirmed in the manufacturer's technical data sheet. Its 1500 W peak pulse power and 13.4 V clamping voltage at 112 A ensure compliant performance when deployed with appropriate PCB layout-particularly with short, low-inductance paths from protected line to chassis ground via the cathode-connected case.
What does the "TR" suffix indicate in 1N5632A/TR?
The "TR" suffix in 1N5632A/TR denotes tape-and-reel packaging per EIA-296 standard, enabling automated surface-mount or through-hole placement equipment compatibility. This version includes standardized carrier tape, cover tape, and reel dimensions-distinct from the bulk or ammo-pack versions of 1N5632A. The "TR" does not alter electrical specifications; all performance parameters remain identical to the base 1N5632A part.
Can the 1N5632A/TR be used in radiation-intensive environments like spacecraft?
Yes, the 1N5632A/TR is inherently radiation-hardened per Microsemi MicroNote 050, validated for total ionizing dose (TID) resilience and single-event effect (SEE) immunity. Its hermetic DO-13 metal-glass construction eliminates moisture ingress and outgassing risks, making it suitable for satellite power conditioning, launch vehicle telemetry, and other space-grade applications where commercial TVS diodes would degrade or fail prematurely.
1N5632A/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-13
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.78V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.4V
- Current - Peak Pulse (10/1000µs):
- 112A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13
1N5632A/TR FAQ
1.How can I place an order for 1N5632A/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5632A/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5632A/TR reliable?
The price and inventory of 1N5632A/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5632A/TR is usually 5 days.
3.What payment methods are accepted for 1N5632A/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5632A/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5632A/TR?
1N5632A/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5632A/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5632A/TR?
For technical support, including 1N5632A/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5632A/TR requirements.
6.How does Aetrix verify that 1N5632A/TR is sourced from the original manufacturer or authorized distributors?
All 1N5632A/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5632A/TR meets industry standards.
7.What is the process for return or replacement of 1N5632A/TR?
All 1N5632A/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5632A/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5632A/TR part is unused and in its original packaging.
Return procedure for 1N5632A/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5632A/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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