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Microchip Technology 1N5633A/TR
- Part No.:
- 1N5633A/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-13
- Datasheet:
-
1N5633A/TR.pdf
- Description:
- TVS DIODE 8.55VWM 14.5VC DO13
- Quantity:
- Payment:
- Shipping:
Inventory:6,636
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Product details
Overview
1N5633A/TR from Microchip Technology is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-reliability surge protection in aerospace and industrial systems. It features a 9.0 V minimum breakdown voltage (VBR), 8.10 V rated standoff voltage (VWM), and clamps transients to ≤15.0 V at 100 A peak pulse current (IPP), delivering 1500 W peak pulse power (10/1000 µs).
For engineers reviewing the 1N5633A/TR datasheet, 1N5633A/TR pinout, 1N5633A/TR application, or 1N5633A/TR equivalent, this device serves as a military-grade, radiation-hardened TVS for IEC 61000-4-2 ESD, IEC 61000-4-4 EFT, and secondary lightning protection per IEC 61000-4-5 with 2–42 Ω source impedance.
Technical Context
The 1N5633A/TR operates as a unidirectional avalanche diode, entering breakdown when reverse voltage exceeds its 9.0–10.5 V VBR range at 1 mA test current. Its response time is under 100 ps, enabling sub-nanosecond clamping during fast transients such as ESD events or inductive switching spikes.
It is rated for continuous operation from –55 °C to +175 °C, with thermal resistance of 50 °C/W junction-to-lead (0.375″ from body). The cathode is internally connected to the metal case, enforcing fixed polarity and requiring correct PCB layout for grounding integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.10 V - Maximum continuous reverse operating voltage before leakage exceeds 10 µA; sets system-level DC bias margin. |
| VBR @ IBR | 9.00–10.5 V @ 1 mA - Confirmed breakdown threshold defining turn-on sensitivity for transient suppression. |
| VC @ IPP | 15.0 V @ 100 A - Clamped voltage during 10/1000 µs surge; determines maximum stress on downstream ICs. |
| PPP | 1500 W - Peak pulse power handling capability; supports robust protection against MIL-STD-1275B and ISO 7637-2 pulses. |
| IPP | 100 A - Peak surge current capacity at rated clamping voltage; defines survivability under Class 4 IEC 61000-4-5 (2 Ω source). |
| TJ Range | –55 °C to +175 °C - Extended temperature operation enables use in avionics, engine control, and downhole electronics. |
| Package | DO-13 (DO-202AA) - Hermetic metal-glass construction ensures long-term reliability in high-humidity, high-vibration, and radiation environments. |
Pinout & Package
Hermetically sealed DO-13 (DO-202AA) metal package with axial leads: cathode (marked end) electrically bonded to case; anode is lead 2. Polarity indicated by diode symbol marking on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Input node for protected line | Connected to signal/power line requiring transient suppression; must be routed with low-inductance path to minimize overshoot. |
| Cathode (Lead 1 / Case) | Ground reference terminal | Internally tied to metal case; requires direct low-impedance connection to system ground plane or chassis for effective clamping. |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional TVS architecture | Enables precise DC-biased line protection without forward conduction during normal operation. |
| 1500 W peak pulse power (10/1000 µs) | Supports high-energy surges common in 24 V/28 V avionics buses and industrial PLC I/O modules. |
| <100 ps response time | Clamps ESD events (IEC 61000-4-2 ±8 kV contact) before sensitive CMOS inputs are damaged. |
| Hermetic DO-13 metal package | Eliminates moisture ingress and outgassing risks critical for space-grade and military applications. |
| Radiation hardness (per MicroNote 050) | Validated performance in total ionizing dose (TID) environments up to 100 krad(Si), suitable for satellite subsystems. |
Applications
| Aerospace Power Bus Protection | Industrial Motor Drive I/O |
|---|---|
Use Scenario: Protecting 28 V DC distribution lines in airborne avionics against load dump, inductive kickback, and secondary lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between bus rail and ground, activated only during overvoltage events. Use Value: Limits transient voltage to ≤15.0 V, preserving integrity of MIL-STD-1553 transceivers and ARINC 429 receivers without affecting steady-state operation. |
Use Scenario: Shielding digital input/output terminals of programmable logic controllers from EFT bursts generated by nearby AC motor switching. IC Role / Device Role / Timing Role: Standoff-rated TVS on each I/O line, absorbing repetitive 5 kHz EFT bursts per IEC 61000-4-4 Level 4. Use Value: Maintains <10 µA leakage at 8.10 V VWM, preventing false triggering while clamping 40 A surges within 100 ps. |
| Automotive Engine Control Unit (ECU) | Military Radio Front-End Protection |
Use Scenario: Safeguarding sensor interfaces (e.g., crankshaft position, knock sensors) in under-hood ECUs exposed to ISO 7637-2 Pulse 1/2a/5a transients. IC Role / Device Role / Timing Role: Primary transient suppressor on analog sensor supply lines, positioned upstream of LDO regulators. Use Value: Withstands –55 °C to +175 °C ambient, ensuring functionality across cold cranking to exhaust manifold proximity conditions. |
Use Scenario: Hardening RF receiver antenna ports against ESD and induced RF energy in handheld tactical radios operating in field-deployed environments. IC Role / Device Role / Timing Role: First-stage protection device shunting fast-rising transients directly to chassis ground via case bond. Use Value: Hermetic DO-13 package prevents parameter drift in high-humidity jungle or maritime deployments where plastic packages degrade. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5633A | No tape-and-reel packaging; bulk format only; identical electrical specs and DO-13 package. | Lacks TR suffix; not optimized for automated SMT placement; requires manual loading or tube feeders. | Select 1N5633A/TR when volume production demands reel-fed pick-and-place compatibility with no change to circuit design or layout. |
| SMBJ8.0A | Surface-mount SMB package; 8.0 V VWM; 12.3 V VC @ 82.1 A; lower 600 W PPP. | Smaller footprint but reduced surge rating and non-hermetic construction; unsuitable for radiation or high-reliability mil-aero use. | Choose SMBJ8.0A only for cost-sensitive commercial designs where DO-13 mechanical robustness and radiation tolerance are not required. |
Compared with 1N5633A/TR, the 1N5633A offers identical protection performance but lacks tape-and-reel convenience, while SMBJ8.0A trades hermetic reliability and 1500 W surge capacity for board-space savings-making 1N5633A/TR the sole choice for mission-critical, high-surge, radiation-exposed applications.
Availability
1N5633A/TR is available at Aetrix Electronics and suitable for aerospace power bus protection, industrial motor drive I/O hardening, automotive ECU sensor interface protection, and military radio front-end shielding requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N5633A/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology acquired Microsemi in 2018 and now manages its high-reliability analog and discrete product portfolio, including radiation-hardened and military-qualified components.
The 1N5633A/TR belongs to Microchip's legacy Microsemi TVS diode family, engineered specifically for defense, aerospace, and industrial systems demanding hermetic sealing, extreme temperature resilience, and certified IEC 61000-4-x compliance.
FAQ
What is the standoff voltage (VWM) of the 1N5633A/TR?
The 1N5633A/TR has a rated standoff voltage (VWM) of 8.10 V, meaning it remains in high-impedance state below this reverse voltage, with leakage current limited to ≤10 µA. This value ensures compatibility with 5 V–9 V logic-supplied circuits and 24 V industrial buses where nominal operating voltage must stay safely below the clamping threshold. The 1N5633A/TR is selected for systems requiring precise DC margin before avalanche onset.
Does the 1N5633A/TR meet IEC 61000-4-5 secondary lightning standards?
Yes, the 1N5633A/TR is validated for secondary lightning protection per IEC 61000-4-5 across multiple source impedances: it supports Class 4 with 2 Ω source (up to 100 A IPP), Class 3 with 42 Ω source (up to 100 A), and all intermediate classes. Its 15.0 V clamping voltage at 100 A ensures downstream circuitry remains within safe operating limits during standardized surge waveforms-confirmed in Microsemi's T4-LDS-0096 Rev. 3 documentation.
Is the 1N5633A/TR radiation hardened?
Yes, the 1N5633A/TR is inherently radiation hard per Microsemi MicroNote 050, demonstrating stable electrical parameters after exposure to total ionizing dose (TID) levels up to 100 krad(Si). This qualification stems from its hermetic DO-13 metal-glass construction and silicon process controls, making the 1N5633A/TR suitable for satellite power regulation, launch vehicle telemetry, and nuclear instrumentation where single-event effects and cumulative dose tolerance are mandatory.
What is the thermal resistance of the 1N5633A/TR, and how does it affect layout?
The 1N5633A/TR has a junction-to-lead thermal resistance of 50 °C/W when measured at 0.375 inches (10 mm) from the case body. This value assumes direct metal-to-metal thermal conduction-so PCB layout must connect the cathode (case) to a large copper pour or chassis ground with minimal thermal resistance. Failure to do so risks exceeding the +175 °C max junction temperature during repetitive surges, degrading long-term reliability of the 1N5633A/TR.
How does the "TR" suffix in 1N5633A/TR impact procurement and assembly?
The "TR" suffix in 1N5633A/TR indicates tape-and-reel packaging per EIA-296 standard, enabling automated surface-mount or through-hole placement using standard feeder equipment. Unlike bulk or ammo-pack versions, the 1N5633A/TR arrives in moisture-barrier bags with indexed carrier tape, supporting JIT manufacturing, traceability, and reduced handling damage-critical for high-mix aerospace and defense production where the 1N5633A/TR is deployed in safety-critical subsystems.
1N5633A/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-13
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.55V
- Voltage - Breakdown (Min):
- 9.5V
- Voltage - Clamping (Max) @ Ipp:
- 14.5V
- Current - Peak Pulse (10/1000µs):
- 103A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13
1N5633A/TR FAQ
1.How can I place an order for 1N5633A/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5633A/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5633A/TR reliable?
The price and inventory of 1N5633A/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5633A/TR is usually 5 days.
3.What payment methods are accepted for 1N5633A/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5633A/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5633A/TR?
1N5633A/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5633A/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5633A/TR?
For technical support, including 1N5633A/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5633A/TR requirements.
6.How does Aetrix verify that 1N5633A/TR is sourced from the original manufacturer or authorized distributors?
All 1N5633A/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5633A/TR meets industry standards.
7.What is the process for return or replacement of 1N5633A/TR?
All 1N5633A/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5633A/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5633A/TR part is unused and in its original packaging.
Return procedure for 1N5633A/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5633A/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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