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Microchip Technology 1N5637AE3/TR
- Part No.:
- 1N5637AE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-202AA, DO-13, Axial
- Datasheet:
-
1N5637AE3/TR.pdf
- Description:
- TVS DIODE 12.8VWM 21.2VC DO13
- Quantity:
- Payment:
- Shipping:
Inventory:6,582
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Product details
Overview
1N5637AE3/TR from Microchip Technology is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-reliability surge protection in aerospace and industrial systems. It features a 12.1 V rated standoff voltage (VWM), 13.5 V minimum breakdown voltage (V(BR)), 22.0 V maximum clamping voltage (VC) at 68 A peak pulse current, and 1500 W peak pulse power rating per 10/1000 µs waveform.
For engineers reviewing the 1N5637AE3/TR datasheet, 1N5637AE3/TR pinout, 1N5637AE3/TR application, or 1N5637AE3/TR equivalent, this device is selected for ESD/EFT protection per IEC 61000-4-2/-4-4, secondary lightning protection per IEC 61000-4-5 (with 42 Ω, 12 Ω, or 2 Ω source impedance), and inductive switching transient suppression in avionics power rails and control interfaces.
Technical Context
This TVS operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds V(BR) = 13.5–14.3 V at I(BR) = 1 mA. Its response time is under 100 ps, enabling effective suppression of fast transients including ESD events and RF-induced surges.
The device is rated for operation from –55 °C to +175 °C, with thermal resistance of 50 °C/W junction-to-lead (at 10 mm lead length) and 110 °C/W junction-to-ambient on FR4 PCB. Its cathode is internally connected to the metal case, requiring proper grounding of the DO-13 package body in layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12.1 V - Maximum continuous reverse operating voltage before conduction begins; must exceed system DC rail (e.g., 12 V nominal bus). |
| V(BR) min/max | 13.5 V / 14.3 V @ 1 mA - Avalanche onset range; defines minimum overvoltage threshold for clamping activation. |
| VC @ IPP | 22.0 V @ 68 A - Maximum voltage seen across device during 10/1000 µs surge; limits stress on downstream ICs. |
| PPP | 1500 W - Peak pulse power handling capability; supports high-energy transients without failure. |
| ID @ VWM | 5 µA - Leakage current at standoff voltage; negligible loading on 12 V supply lines. |
| αV(BR) | 0.084 %/°C - Temperature coefficient of breakdown voltage; enables predictable V(BR) shift over –55 °C to +175 °C. |
| Package | DO-13 (DO-202AA) - Hermetic metal-glass axial package with cathode-connected case; suitable for high-reliability, radiation-hardened environments. |
Pinout & Package
DO-13 (DO-202AA) hermetically sealed metal-glass axial package with cathode terminal electrically bonded to case. Polarity marked by diode symbol on body; cathode lead is designated Lead 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Transient return path | Connected to protected line (e.g., 12 V rail); carries full surge current into cathode/case ground. |
| Cathode (Lead 1) | Clamp reference node | Internally tied to metal case; must be soldered to low-inductance ground plane to minimize clamping overshoot. |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional clamping | Protects only against negative transients on positive rails; avoids forward conduction during normal operation. |
| 1500 W peak pulse power | Withstands high-energy surges from inductive load switching or lightning-induced coupling without degradation. |
| <100 ps response time | Engages before ESD or EFT pulses fully develop, limiting voltage overshoot to ≤22.0 V at 68 A. |
| Hermetic DO-13 package | Provides long-term reliability in humid, high-vibration, or radiation-exposed environments (inherently rad-hard per MicroNote 050). |
| MIL-PRF-19500/500 qualified variants | JANTXV1N5637A available for defense/aerospace programs requiring screened, tested, and traceable components. |
Applications
| Aerospace Power Bus Protection | Industrial PLC Input Protection |
|---|---|
Use Scenario: Protecting 12 V primary power distribution in airborne avionics modules from induced lightning transients and switching noise. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between 12 V rail and chassis ground to limit surge voltage to ≤22.0 V. Use Value: Prevents latch-up or damage to DC-DC converters and microcontrollers during secondary lightning events per IEC 61000-4-5 (42 Ω source). |
Use Scenario: Shielding digital input channels of programmable logic controllers from field-wire EFT and relay-coil flyback spikes. IC Role / Device Role / Timing Role: Standoff-rated TVS (VWM = 12.1 V) installed at connector entry point to shunt transients before signal conditioning circuitry. Use Value: Maintains functional integrity under IEC 61000-4-4 Level 4 (4 kV) bursts while adding <5 µA leakage at nominal 12 V input. |
| Avionics Sensor Interface Protection | Rail-to-Rail Signal Line Clamping |
Use Scenario: Safeguarding analog sensor outputs (e.g., pressure transducers) connected to flight control computers against RF-induced transients. IC Role / Device Role / Timing Role: Low-leakage (5 µA) TVS placed across differential pair or single-ended output to suppress common-mode surges. Use Value: Enables compliance with RTCA DO-160 Section 22 radiated susceptibility and Section 25 lightning indirect effects testing. |
Use Scenario: Clamping bidirectional signal lines referenced to 12 V rail (e.g., CAN H/L in harsh vehicle environments). IC Role / Device Role / Timing Role: Paired unidirectional TVS devices (anode-to-rail, cathode-to-ground) used to protect both high- and low-side transitions. Use Value: Achieves symmetric clamping behavior with 22.0 V VC on positive excursions and forward conduction limit on negative excursions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ12A | Surface-mount SMC package; same VWM (12 V), slightly higher VC (20.1 V @ 69.4 A); lower thermal resistance (junction-to-PCB). | Preferred for automated assembly and space-constrained PCBs; not hermetic or rad-hard. | Select when volume production, reflow compatibility, and board density outweigh need for military qualification or radiation tolerance. |
| 1N5637A | Same electrical specs and DO-13 package, but without tape-and-reel (TR) packaging; no EIA-296 compliance. | Used in manual assembly or low-volume prototyping where reel feed is unnecessary. | Choose when procurement logistics favor bulk tube packaging and TR handling is not required in SMT line. |
Compared with 1N5637AE3/TR, SMCJ12A offers superior manufacturability and thermal performance in commercial designs, while 1N5637A retains identical protection characteristics without tape-and-reel convenience-making the TR variant optimal for high-reliability through-hole production with automated feeding.
Availability
1N5637AE3/TR is available at Aetrix Electronics and suitable for aerospace power bus protection, industrial PLC input hardening, avionics sensor interface shielding, and rail-to-rail signal line clamping requiring stable component supply across extended temperature and surge stress conditions.
Supply support for 1N5637AE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology (formerly Microsemi) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-tolerant components for aerospace, defense, and industrial markets.
The 1N56xxA series belongs to Microchip's legacy military-grade TVS portfolio, engineered specifically for mission-critical transient suppression in avionics, ground vehicles, and infrastructure systems where hermetic sealing and MIL-PRF-19500 qualification are mandatory.
FAQ
What is the clamping voltage of the 1N5637AE3/TR under standard test conditions?
The 1N5637AE3/TR has a maximum clamping voltage (VC) of 22.0 V when subjected to a 10/1000 µs surge waveform at its rated peak pulse current of 68 A. This value is measured at TA = 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The 1N5637AE3/TR maintains this clamping performance across its full operating temperature range due to its specified temperature coefficient of 0.084 %/°C for V(BR).
Is the 1N5637AE3/TR suitable for IEC 61000-4-5 secondary lightning protection?
Yes, the 1N5637AE3/TR is explicitly rated for secondary lightning protection per IEC 61000-4-5 with 42 Ω, 12 Ω, and 2 Ω source impedances - supporting Class 1 through Class 4 depending on impedance configuration. Its 1500 W peak pulse power and sub-100 ps response enable reliable energy diversion during multi-kV surge events. The 1N5637AE3/TR is commonly deployed in avionics and industrial control systems requiring compliance with this standard.
How does the DO-13 package of the 1N5637AE3/TR affect PCB layout and grounding?
The DO-13 package of the 1N5637AE3/TR features a cathode terminal internally bonded to the metal case, requiring direct mechanical and electrical connection of the case to a low-inductance ground plane. Layout best practices include short, wide traces from anode to protected line and soldering the case to a solid copper pour - minimizing loop inductance to preserve the 1N5637AE3/TR's <100 ps response and prevent clamping voltage overshoot beyond 22.0 V.
What is the difference between 1N5637AE3/TR and 1N5637A?
The 1N5637AE3/TR and 1N5637A share identical electrical specifications, DO-13 packaging, and hermetic construction. The "TR" suffix indicates EIA-296-compliant tape-and-reel packaging for automated placement, while the "E3" denotes Pb-free (RoHS-compliant) termination. The 1N5637A is supplied in bulk tubes and lacks reel packaging - making the 1N5637AE3/TR the preferred choice for high-volume SMT production lines requiring consistent feeding and traceability.
Does the 1N5637AE3/TR meet radiation hardness requirements for space applications?
Yes, the 1N5637AE3/TR is inherently radiation-hardened per Microsemi MicroNote 050, a documented qualification for total ionizing dose (TID) and single-event effects (SEE) resilience. Its hermetic DO-13 metal-glass construction and silicon process contribute to robustness in high-radiation environments. While not a QML-V qualified part, the 1N5637AE3/TR is widely used in non-QML space-qualified subsystems where radiation tolerance and long-term reliability are critical design constraints.
1N5637AE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-202AA, DO-13, Axial
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12.8V
- Voltage - Breakdown (Min):
- 14.3V
- Voltage - Clamping (Max) @ Ipp:
- 21.2V
- Current - Peak Pulse (10/1000µs):
- 71A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13 (DO-202AA)
1N5637AE3/TR FAQ
1.How can I place an order for 1N5637AE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5637AE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5637AE3/TR reliable?
The price and inventory of 1N5637AE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5637AE3/TR is usually 5 days.
3.What payment methods are accepted for 1N5637AE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5637AE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5637AE3/TR?
1N5637AE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5637AE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5637AE3/TR?
For technical support, including 1N5637AE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5637AE3/TR requirements.
6.How does Aetrix verify that 1N5637AE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N5637AE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5637AE3/TR meets industry standards.
7.What is the process for return or replacement of 1N5637AE3/TR?
All 1N5637AE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5637AE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5637AE3/TR part is unused and in its original packaging.
Return procedure for 1N5637AE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5637AE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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