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Microchip Technology 1N5646AE3
- Part No.:
- 1N5646AE3
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-202AA, DO-13, Axial
- Datasheet:
-
1N5646AE3.pdf
- Description:
- TVS DIODE 30.8VWM 49.9VC DO13
- Quantity:
- Payment:
- Shipping:
Inventory:4,432
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Product details
Overview
1N5646AE3 from Microchip Technology is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-reliability protection against ESD (IEC61000-4-2), EFT (IEC61000-4-4), and secondary lightning surges (IEC61000-4-5). It features a 29.1 V rated standoff voltage (VWM), 32.4 V minimum breakdown voltage (V(BR)), and clamps transients to ≤52.0 V at 29 A peak pulse current (IPP), delivering 1500 W peak pulse power (10/1000 µs).
For engineers reviewing the 1N5646AE3 datasheet, 1N5646AE3 pinout, 1N5646AE3 application, or 1N5646AE3 equivalent, this part is selected for aerospace avionics, military-grade power rail protection, and industrial control systems where sub-100 ps response time, radiation hardness, and hermetic reliability are mandatory.
Technical Context
The 1N5646AE3 operates as a unidirectional avalanche-clamping device with cathode connected to case, requiring correct polarity orientation in series with protected lines. Its DO-13 package provides 50°C/W junction-to-lead thermal resistance and supports 200 A forward surge current (8.3 ms half-sine) at +25°C ambient.
It is qualified per MIL-PRF-19500/500 JANTXV level, with guaranteed 0.099%/°C temperature coefficient of V(BR) and ≤5 µA standby leakage at VWM. The device is inherently radiation-hardened per Microsemi MicroNote 050 and rated for operation from –55°C to +175°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Rated Standoff Voltage) | 29.1 V - Maximum continuous reverse voltage before conduction; sets minimum operating margin above system DC rail. |
| V(BR) min @ I(BR) | 32.4 V @ 1 mA - Guaranteed avalanche initiation threshold; ensures predictable clamping onset under transient stress. |
| VC max @ IPP | 52.0 V @ 29 A - Peak clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream circuitry. |
| PPP (Peak Pulse Power) | 1500 W - Sustains high-energy transients without failure; enables robust protection in inductive switching environments. |
| Response Time | <100 ps - Near-instantaneous avalanche turn-on; critical for suppressing ESD events before IC damage occurs. |
| Operating Temperature | –55°C to +175°C - Supports deployment in extreme environments including engine bays and avionics bays. |
| Radiation Hardness | Inherently radiation-hard per MicroNote 050 - Validated for total ionizing dose (TID) tolerance in space and nuclear applications. |
Pinout & Package
Package: DO-13 (DO-202AA), hermetically sealed metal-glass case with tin-lead plated leads; cathode electrically connected to case; polarity marked by diode symbol on body; weight ≈1.4 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Transient current entry point | Connected to protected line; carries full surge current into avalanche region during clamping. |
| Cathode (Lead 1 / Case) | Reference and return path | Internally tied to metal case; must be connected to system ground or low-impedance reference plane for effective clamping. |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic DO-13 metal package | Eliminates moisture ingress and long-term parameter drift; required for MIL-SPEC and aerospace deployments. |
| JANTXV qualification | Fully compliant with MIL-PRF-19500/500; includes screening for vibration, thermal shock, and burn-in - no requalification needed for defense programs. |
| 1500 W peak pulse rating | Withstands repeated 10/1000 µs surges up to 0.01% duty cycle at 25°C lead temperature - suitable for high-energy industrial transients. |
| Sub-100 ps response | Clamps ESD events before propagation across PCB traces; prevents latch-up or gate oxide rupture in sensitive CMOS interfaces. |
| Radiation-hardened design | No TID-induced parameter shift or functional failure up to specified mission dose levels - validated per MicroNote 050. |
Applications
| Aerospace Avionics Power Protection | Military Vehicle Power Distribution |
|---|---|
Use Scenario: Protecting 28 V DC power inputs in flight control computers against induced lightning transients and ESD during maintenance. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed directly at connector entry point, shunting surge energy to chassis ground. Use Value: Clamps to ≤52.0 V within 100 ps, preventing damage to downstream DC-DC converters and FPGA power rails rated for 36 V absolute maximum. |
Use Scenario: Safeguarding 24 V CAN bus power supplies in armored vehicle electronics against load dump and alternator ripple. IC Role / Device Role / Timing Role: Primary surge suppression element on main battery feed, mounted with short ground path to vehicle chassis. Use Value: Withstands 200 A 8.3 ms forward surge and 1500 W 10/1000 µs pulses while maintaining <5 µA leakage at 29.1 V standby. |
| Industrial PLC I/O Module Protection | Satellite Power Conditioning Unit |
Use Scenario: Shielding analog input channels (0–10 V, 4–20 mA) from field-induced RF and switching noise in factory automation cabinets. IC Role / Device Role / Timing Role: Low-leakage unidirectional TVS placed upstream of signal conditioning op-amps and ADC front-ends. Use Value: Provides <5 µA leakage at VWM and 32.4 V breakdown threshold, enabling precise signal integrity without loading effects. |
Use Scenario: Guarding DC-DC converter inputs in LEO satellite power management units exposed to single-event transients and TID. IC Role / Device Role / Timing Role: Radiation-hardened primary transient suppressor on 28 V bus feeding critical telemetry regulators. Use Value: Inherent radiation hardness per MicroNote 050 and –55°C to +175°C operation ensure uninterrupted function across orbital thermal cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5646A | No E3 suffix; standard commercial finish (non-hermetic tin-lead plating per MIL-STD-750 method 2026 not guaranteed). | Lacks JANTXV qualification and radiation hardness validation; unsuitable for aerospace/military deployment. | Select 1N5646A only for cost-sensitive commercial industrial designs where hermeticity and radiation tolerance are not required. |
| SMCJ28A | Surface-mount SMC package; 28 V VWM; 1500 W rating; 31.1 V V(BR) min; 45.4 V VC @ 33.1 A; RoHS-compliant. | Not hermetically sealed; no radiation hardness data; limited to surface-mount assembly; lower thermal resistance to PCB vs. DO-13 lead-to-ambient. | Choose SMCJ28A for high-volume automated production where board space is constrained and MIL-spec compliance is unnecessary. |
Compared with 1N5646AE3, the 1N5646A omits military screening and hermetic assurance, while SMCJ28A trades package robustness and radiation tolerance for SMT manufacturability and RoHS compliance - selection depends on environmental qualification requirements and assembly methodology.
Availability
1N5646AE3 is available at Aetrix Electronics and suitable for aerospace avionics, military vehicle electronics, and industrial PLC I/O modules requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for 1N5646AE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology (formerly Microsemi) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N56xxA series was developed to meet MIL-PRF-19500/500 requirements for unidirectional transient suppression in mission-critical systems where hermetic packaging, fast response, and radiation tolerance are non-negotiable.
FAQ
What is the standoff voltage (VWM) of the 1N5646AE3?
The 1N5646AE3 has a rated standoff voltage (VWM) of 29.1 V, meaning it remains nonconductive under continuous reverse bias up to this level. This value is selected to provide sufficient margin above typical 28 V DC systems while ensuring reliable clamping onset during transients. The 1N5646AE3 maintains ≤5 µA leakage current at this voltage, preserving signal integrity in precision analog circuits.
Is the 1N5646AE3 suitable for ESD protection per IEC61000-4-2?
Yes, the 1N5646AE3 is explicitly validated for ESD protection per IEC61000-4-2 due to its sub-100 ps response time and low clamping voltage (≤52.0 V at 29 A). Its hermetic DO-13 package ensures consistent performance across temperature and lifetime, making it appropriate for protecting USB, RS-485, and other interface lines in harsh environments where standard polymer TVS devices may degrade.
Does the 1N5646AE3 have radiation hardness certification?
Yes, the 1N5646AE3 is inherently radiation-hardened per Microsemi MicroNote 050, with documented tolerance to total ionizing dose (TID) relevant for low-Earth orbit (LEO) and terrestrial nuclear applications. This characteristic is process-derived and applies to all units in the 1N56xxAE3 family - no additional testing or screening is required to claim radiation hardness for the 1N5646AE3.
What is the thermal resistance of the 1N5646AE3 package?
The 1N5646AE3 exhibits 50°C/W junction-to-lead thermal resistance when measured at 0.375 inches (10 mm) from the case body, per JEDEC standards. When mounted on an FR4 PCB with 4 mm² copper pads (1 oz), its junction-to-ambient resistance rises to 110°C/W. This thermal profile supports sustained operation at +175°C case temperature and informs heatsinking decisions in high-power transient scenarios.
How does the 1N5646AE3 differ from the commercial 1N5646A variant?
The 1N5646AE3 adds the "E3" suffix denoting enhanced finish: hermetic DO-13 sealing and tin-lead plating per MIL-STD-750 method 2026, plus full JANTXV qualification per MIL-PRF-19500/500. Unlike the standard 1N5646A, the 1N5646AE3 guarantees radiation hardness, extended temperature operation, and screening for mechanical shock/vibration - essential for defense and space applications.
1N5646AE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-202AA, DO-13, Axial
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30.8V
- Voltage - Breakdown (Min):
- 34.2V
- Voltage - Clamping (Max) @ Ipp:
- 49.9V
- Current - Peak Pulse (10/1000µs):
- 30A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13 (DO-202AA)
1N5646AE3 FAQ
1.How can I place an order for 1N5646AE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5646AE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5646AE3 reliable?
The price and inventory of 1N5646AE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5646AE3 is usually 5 days.
3.What payment methods are accepted for 1N5646AE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5646AE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5646AE3?
1N5646AE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5646AE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5646AE3?
For technical support, including 1N5646AE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5646AE3 requirements.
6.How does Aetrix verify that 1N5646AE3 is sourced from the original manufacturer or authorized distributors?
All 1N5646AE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5646AE3 meets industry standards.
7.What is the process for return or replacement of 1N5646AE3?
All 1N5646AE3 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5646AE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5646AE3 part is unused and in its original packaging.
Return procedure for 1N5646AE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5646AE3 Tags
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