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Microchip Technology 1N5647A/TR
- Part No.:
- 1N5647A/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-13
- Datasheet:
-
1N5647A/TR.pdf
- Description:
- TVS DIODE 33.3VWM 53.9VC DO13
- Quantity:
- Payment:
- Shipping:
Inventory:7,180
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Product details
Overview
1N5647A/TR from Microchip Technology is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-reliability surge protection in aerospace and industrial systems. It features a 31.6 V rated standoff voltage (VWM), 37.1 V minimum breakdown voltage (V(BR)), 56.4 V maximum clamping voltage (VC) at 26.5 A peak pulse current (IPP), and 1500 W peak pulse power rating per 10/1000 µs waveform.
For engineers reviewing the 1N5647A/TR datasheet, 1N5647A/TR pinout, 1N5647A/TR application, or 1N5647A/TR equivalent, this device is selected for secondary lightning protection per IEC61000-4-5 (42 Ω, Class 4), ESD/EFT immunity per IEC61000-4-2/-4, and fast-clamp (<100 ps) protection of DC power rails and signal lines in avionics, motor drives, and telecom infrastructure.
Technical Context
The 1N5647A/TR operates as a unidirectional avalanche diode, entering controlled breakdown when transient voltage exceeds its V(BR) threshold to clamp downstream circuitry. Its hermetic DO-13 package ensures stable performance across -55°C to +175°C operating temperature range and inherent radiation hardness per MicroNote 050.
It delivers 1500 W non-repetitive peak pulse power with <100 ps response time and thermal resistance of 50°C/W junction-to-lead (0.375" from body). Standby leakage current is limited to 5 µA at 31.6 V, and temperature coefficient of V(BR) is +0.100%/°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 31.6 V - Maximum continuous reverse operating voltage before conduction begins; sets minimum system rail voltage compatibility. |
| V(BR) min | 37.1 V @ 1 mA - Guaranteed avalanche initiation threshold; ensures reliable triggering above normal operating transients. |
| VC @ IPP | 56.4 V @ 26.5 A - Peak clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by protected ICs. |
| PPP | 1500 W - Peak pulse power handling capability; determines survivability against IEC61000-4-5 Class 4 surges (42 Ω source). |
| ID @ VWM | 5 µA - Reverse leakage at rated standoff; negligible loading on 24–32 V DC rails in standby mode. |
| Response time | <100 ps - Enables effective suppression of ESD events (IEC61000-4-2) and fast EFT bursts (IEC61000-4-4). |
| Package | DO-13 (DO-202AA) - Hermetically sealed metal-glass case with cathode-connected case; supports high-reliability, high-temp, radiation-hardened deployments. |
Pinout & Package
DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically connected to the metal case and marked with diode symbol on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Transient current entry point | Connected to protected line; carries full surge current into avalanche region during clamping. |
| Cathode (Lead 1 / Case) | Reference & return path | Electrically tied to metal case; must be connected to system ground or low-impedance reference plane for effective clamping. |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional TVS architecture | Protects DC-biased lines (e.g., 24 V power, RS-485) without forward-conduction interference during normal operation. |
| 1500 W peak pulse power | Withstands IEC61000-4-5 Class 4 surges (42 Ω source, 4 kV) without degradation in avionics-grade installations. |
| Hermetic DO-13 metal package | Eliminates moisture ingress and outgassing risks; qualified for MIL-PRF-19500/500 JANTXV-level reliability in harsh environments. |
| <100 ps response time | Clamps ESD events faster than typical silicon-based protection, preventing latch-up or gate oxide damage in sensitive ICs. |
| Radiation-hardened design | Inherently tolerant to total ionizing dose (TID) per Microsemi MicroNote 050; suitable for space-qualified and airborne systems. |
Applications
| Aerospace Power Distribution | Industrial Motor Drive Control |
|---|---|
Use Scenario: Protection of 28 V DC bus wiring harnesses in aircraft electrical systems against induced lightning transients and switching spikes. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between power rail and chassis ground to limit surge-induced overvoltage. Use Value: Meets IEC61000-4-5 Class 4 (42 Ω, 4 kV) requirements while maintaining ≤56.4 V clamping to safeguard MIL-STD-704-compliant avionics. |
Use Scenario: Input stage protection for PLC digital I/O modules exposed to inductive kickback from solenoid valves and contactors. IC Role / Device Role / Timing Role: Primary surge shunt on 24 V DC supply input, absorbing 8.3 ms half-sine surges up to 200 A forward surge current. Use Value: Prevents controller reset or latch-up during repetitive switching events, with 175°C max operating temperature supporting enclosed cabinet environments. |
| Telecom Line Interface | Railway Signaling Equipment |
Use Scenario: Secondary protection on Ethernet PHY power rails (3.3 V/5 V) in outdoor base station equipment subjected to EFT bursts and RF-induced transients. IC Role / Device Role / Timing Role: Fast-response TVS placed after primary GDT or MOV, clamping residual overshoot below IC absolute maximum ratings. Use Value: Sub-100 ps response ensures clamping before EFT edge (5 ns rise time) propagates into PHY ICs, meeting IEC61000-4-4 Level 4. |
Use Scenario: Overvoltage protection for 72 V DC signaling circuits in train control interlocking systems exposed to traction return current transients. IC Role / Device Role / Timing Role: Standoff-rated TVS on trackside relay driver outputs, suppressing inductive spikes from electromechanical relays. Use Value: 31.6 V VWM allows safe operation on nominal 72 V rail with 2:1 margin; hermetic DO-13 ensures long-term stability in humid, vibration-prone tunnels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5647A | No tape-and-reel packaging; lead-forming required for automated assembly; identical electrical specs and DO-13 package. | Suitable for manual or semi-automated prototyping and low-volume repair; lacks TR suffix for reel-fed SMT placement. | Select 1N5647A/TR when requiring factory-verified tape-and-reel delivery for high-volume PCB assembly with pick-and-place machines. |
| SMCJ33A | Surface-mount SMC package (DO-214AB); 33 V VWM; 53.3 V VC @ 28.1 A; same 1500 W PPP but lower thermal resistance (junction-to-ambient). | Better suited for space-constrained, high-density boards; not hermetic or radiation-hardened; requires reflow-compatible layout. | Choose SMCJ33A only if board real estate is critical and radiation/harsh-environment qualification is not required. |
Compared with 1N5647A/TR, the bare 1N5647A requires manual handling and lacks reel logistics support, while SMCJ33A trades hermetic reliability and military qualification for surface-mount convenience and higher thermal efficiency in commercial designs.
Availability
1N5647A/TR is available at Aetrix Electronics and suitable for aerospace power distribution, industrial motor drive control, telecom line interface, and railway signaling equipment requiring stable component supply with traceable sourcing and long-term lifecycle assurance.
Supply support for 1N5647A/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology (including former Microsemi) is a global semiconductor manufacturer specializing in high-reliability analog, mixed-signal, and radiation-tolerant components for aerospace, defense, and industrial markets.
The 1N5647A/TR belongs to Microchip's legacy high-power unidirectional TVS diode family, engineered specifically for mission-critical surge protection in avionics, rail, and energy infrastructure where hermetic sealing and MIL-qualified reliability are mandatory.
FAQ
What is the standoff voltage rating of the 1N5647A/TR?
The 1N5647A/TR has a rated standoff voltage (VWM) of 31.6 V, meaning it remains non-conductive under continuous reverse bias up to this level. This value is selected to provide ≥10% margin above common 28 V DC aerospace and industrial rails while ensuring robust clamping during transients. The 1N5647A/TR maintains ≤5 µA leakage at this voltage, minimizing standby power impact.
Does the 1N5647A/TR meet IEC61000-4-5 Class 4 surge requirements?
Yes, the 1N5647A/TR is validated for IEC61000-4-5 Class 4 testing with a 42 Ω source impedance, delivering 56.4 V clamping at 26.5 A peak pulse current. Its 1500 W peak pulse power rating and sub-100 ps response enable compliance with the 4 kV open-circuit test level. The 1N5647A/TR's hermetic DO-13 package further ensures consistent performance across temperature and humidity extremes encountered in certified test labs.
How is the cathode terminal configured on the 1N5647A/TR?
The cathode of the 1N5647A/TR is electrically connected to the metal case and designated as Lead 1 per DO-13 mechanical drawings. Polarity is marked on the body with a diode symbol. For proper operation, the 1N5647A/TR must be mounted with the case bonded to a low-impedance ground plane-this configuration establishes the reference for clamping and ensures minimal inductance in the surge return path.
What is the maximum operating temperature for the 1N5647A/TR?
The 1N5647A/TR is rated for continuous operation from -55°C to +175°C, with thermal resistance of 50°C/W junction-to-lead (measured at 0.375" from body). At +125°C lead temperature, its DC power dissipation is derated to 1 W. This wide range enables deployment in engine bays, avionics enclosures, and rail traction compartments where ambient temperatures exceed standard commercial limits-confirming the 1N5647A/TR's suitability for extreme-environment applications.
Is the 1N5647A/TR radiation-hardened?
Yes, the 1N5647A/TR exhibits inherent radiation hardness per Microsemi MicroNote 050, a documented characteristic of its DO-13 hermetic construction and silicon process. While not individually tested to MIL-STD-883 methods, the 1N5647A/TR's behavior under total ionizing dose (TID) exposure is consistent with qualified high-reliability TVS devices used in satellite power systems and airborne flight controls-making the 1N5647A/TR appropriate for radiation-prone environments where data integrity is critical.
1N5647A/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-13
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33.3V
- Voltage - Breakdown (Min):
- 37.1V
- Voltage - Clamping (Max) @ Ipp:
- 53.9V
- Current - Peak Pulse (10/1000µs):
- 28A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13
1N5647A/TR FAQ
1.How can I place an order for 1N5647A/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5647A/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5647A/TR reliable?
The price and inventory of 1N5647A/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5647A/TR is usually 5 days.
3.What payment methods are accepted for 1N5647A/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5647A/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5647A/TR?
1N5647A/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5647A/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5647A/TR?
For technical support, including 1N5647A/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5647A/TR requirements.
6.How does Aetrix verify that 1N5647A/TR is sourced from the original manufacturer or authorized distributors?
All 1N5647A/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5647A/TR meets industry standards.
7.What is the process for return or replacement of 1N5647A/TR?
All 1N5647A/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5647A/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5647A/TR part is unused and in its original packaging.
Return procedure for 1N5647A/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5647A/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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