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Microchip Technology 1N5649A
- Part No.:
- 1N5649A
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-13
- Datasheet:
-
1N5649A.pdf
- Description:
- TVS DIODE 40.2VWM 64.8VC DO13
- Quantity:
- Payment:
- Shipping:
Inventory:3,279
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Product details
Overview
1N5649A from Microchip Technology is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-reliability surge protection in aerospace and industrial systems. It features a 38.1 V rated standoff voltage (VWM), 42.3 V minimum breakdown voltage (V(BR)), clamps transients to ≤67.8 V at 22.2 A peak pulse current (IPP), and delivers 1500 W peak pulse power (10/1000 µs). It is widely deployed in avionics power rail protection against secondary lightning and ESD.
For engineers reviewing the 1N5649A datasheet, 1N5649A pinout, 1N5649A application, or 1N5649A equivalent, key selection criteria include its unidirectional polarity, DO-13 mechanical robustness, sub-100 ps response time, IEC61000-4-2/-4-4/-4-5 compliance capability, and military-grade JAN/JANTXV qualification path via prefix addition.
Technical Context
The 1N5649A operates as a silicon avalanche diode with tightly controlled breakdown characteristics, entering conduction only when reverse voltage exceeds V(BR) ≈ 42.3–45.9 V, maintaining low leakage (<5 µA at VWM = 38.1 V). Its thermal resistance is 50°C/W junction-to-lead, enabling stable operation from –55°C to +175°C.
It is optimized for single-pulse transient suppression rather than continuous DC dissipation, with a maximum DC power rating of 1 W only at lead temperature ≤125°C. Its clamping behavior is defined by VC = 67.8 V at IPP = 22.2 A under standardized 10/1000 µs waveform conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 38.1 V - Maximum continuous reverse operating voltage before avalanche onset; sets system-level DC rail compatibility. |
| V(BR) min/max | 42.3 V / 45.9 V - Breakdown voltage range at 1 mA test current; defines precise overvoltage triggering threshold. |
| VC @ IPP | 67.8 V - Maximum clamped voltage during 22.2 A 10/1000 µs surge; determines protected circuit's worst-case overvoltage stress. |
| IPP | 22.2 A - Peak pulse current survivable at VWM = 38.1 V; quantifies surge energy handling per IEC61000-4-5 Class 4 (42 Ω source). |
| PPP | 1500 W - Non-repetitive peak pulse power rating; confirms suitability for high-energy transient events in harsh environments. |
| Response time | <100 ps - Avalanche turn-on latency; ensures effective suppression of ESD (IEC61000-4-2) and fast EFT bursts. |
| Package | DO-13 (DO-202AA) - Hermetically sealed metal-glass case with cathode-connected case; provides radiation hardness and MIL-PRF-19500/500 compliance readiness. |
Pinout & Package
DO-13 (DO-202AA) package: hermetically sealed metal case with glass seal, cathode connected to case and marked with diode symbol. Lead length 1.000–1.625 inches; case diameter 0.215–0.235 inches; weight ≈1.4 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Transient current return path | Connected to protected circuit ground or low-side reference; carries full surge current during clamping. |
| Cathode (Lead 1 / Case) | High-side connection point | Electrically tied to metal case; must be mounted to thermally conductive plane for optimal heat dissipation and EMI shielding. |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional TVS architecture | Enables precise placement on DC-biased lines without forward-conduction interference; ideal for power rail and signal-line protection. |
| Hermetic DO-13 metal packaging | Provides inherent radiation hardness (per MicroNote 050), moisture immunity, and long-term reliability in extended-temperature avionics deployments. |
| 1500 W peak pulse power (10/1000 µs) | Supports Class 4 secondary lightning protection per IEC61000-4-5 with 42 Ω source impedance, covering critical airborne subsystems. |
| Sub-100 ps response time | Ensures effective suppression of ESD events (±8 kV contact, ±15 kV air per IEC61000-4-2) before downstream IC damage occurs. |
| MIL-PRF-19500/500 qualification path | Enables JANTXV prefix variant (e.g., JANTXV1N5649A) for flight-critical applications requiring traceable process controls and screening. |
Applications
| Aerospace Power Distribution | Industrial Motor Drive Control |
|---|---|
Use Scenario: Protection of 28 V DC bus in aircraft auxiliary power units against load dump and induced lightning surges. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed across bus input to clamp transients before reaching DC-DC converters and avionics controllers. Use Value: Limits bus overvoltage to ≤67.8 V during 22.2 A surges, preserving MIL-STD-704 compliance and preventing latch-up in downstream FPGAs and ADCs. |
Use Scenario: Surge protection on gate drive supply rails of IGBT modules in variable-frequency drives subjected to inductive switching noise. IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing repetitive 10/1000 µs transients generated by snubber circuits and relay coil de-energization. Use Value: Maintains 38.1 V rail integrity while surviving >100,000 surge cycles due to DO-13 thermal mass and low thermal resistance (50°C/W). |
| Railway Signaling Interface | Defense Communications Equipment |
Use Scenario: Input protection for 48 V DC telemetry interfaces in trackside signaling cabinets exposed to traction current coupling and lightning-induced ground potential rise. IC Role / Device Role / Timing Role: Primary transient shunt on RS-485 line power inputs, coordinated with series impedance and filtering. Use Value: Clamps 42 Ω-source IEC61000-4-5 surges to safe levels without degradation after repeated 1500 W pulses, validated per EN 50121-4. |
Use Scenario: ESD hardening of front-panel USB and Ethernet ports in ruggedized tactical radios operating in desert and maritime environments. IC Role / Device Role / Timing Role: First-line defense against ±15 kV air-gap ESD per IEC61000-4-2, leveraging sub-100 ps response to prevent latch-up in PHY ICs. Use Value: Achieves <10 ns overvoltage exposure window and <5 µA standby leakage, ensuring no impact on signal integrity or battery drain in always-on mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ36A | Surface-mount SMC package; 36 V VWM; 58.1 V VC @ 25.1 A; same 1500 W rating but lower thermal mass. | Designed for automated PCB assembly; lacks hermetic sealing and radiation hardness; not qualified to MIL-PRF-19500. | Select when board space is constrained and military qualification is unnecessary; requires thermal pad design for equivalent power handling. |
| 1N5648A | Adjacent family member with 36.8 V VWM, 40.2 V V(BR) min, 64.8 V VC @ 23.2 A; identical DO-13 package and construction. | Suitable for 36 V nominal systems instead of 38.1 V; shares same qualification path and environmental robustness. | Choose for tighter VWM margin in 36 V rail designs; maintains full interchangeability in mounting, screening, and thermal management. |
Compared with SMCJ36A and 1N5648A, the 1N5649A offers superior high-temperature stability (175°C max), hermetic reliability for mission-critical use, and direct qualification scalability to JANTXV level-making it the preferred choice where environmental resilience outweighs SMT assembly convenience.
Availability
1N5649A is available at Aetrix Electronics and suitable for aerospace power distribution, industrial motor drive control, railway signaling interface, and defense communications equipment requiring stable component supply across extended temperature and radiation-exposed environments.
Supply support for 1N5649A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology (formerly Microsemi) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N5649A belongs to Microchip's legacy high-power unidirectional TVS diode family, engineered specifically for mission-critical transient suppression in avionics, ground vehicle electronics, and infrastructure systems demanding MIL-qualified robustness.
FAQ
What is the maximum clamping voltage of the 1N5649A under standard surge conditions?
The 1N5649A exhibits a maximum clamping voltage (VC) of 67.8 V when subjected to its rated peak pulse current (IPP) of 22.2 A under the standardized 10/1000 µs waveform. This value is measured at TA = 25°C and defines the upper voltage limit imposed on protected circuitry during transient events, ensuring downstream components remain within safe operating limits.
Is the 1N5649A suitable for bidirectional transient protection?
No, the 1N5649A is a unidirectional TVS diode and conducts only in reverse breakdown. It must be used with correct polarity-cathode connected to the higher-potential side of the protected line. For bidirectional protection in the same DO-13 package, Microchip specifies the separate 1N6036–1N6072A series, which are explicitly designed for symmetrical surge suppression.
Does the 1N5649A meet IEC61000-4-5 Class 4 lightning surge requirements?
Yes, the 1N5649A supports IEC61000-4-5 Class 4 secondary lightning protection when tested with a 42 Ω source impedance, as confirmed in the datasheet's Applications/Benefits section. Its 22.2 A IPP rating at 38.1 V VWM aligns directly with the 1 kV/2 kA open-circuit voltage/current combination defined for Class 4 under that standard.
Can the 1N5649A be used in surface-mount designs?
No-the 1N5649A is exclusively offered in the through-hole DO-13 (DO-202AA) metal package. For surface-mount equivalents with comparable electrical ratings, Microchip recommends the SMCJ36A (36 V VWM) or SMCG36A families, which share the 1500 W peak pulse power rating but use SMC or SMCG packages and require different PCB layout and thermal strategies.
What is the temperature coefficient of breakdown voltage for the 1N5649A?
The 1N5649A has a maximum temperature coefficient of breakdown voltage (αV(BR)) of 0.101 %/°C, indicating that its V(BR) increases by up to 0.101% per degree Celsius rise in junction temperature. This positive coefficient ensures predictable, monotonic voltage drift under thermal stress-critical for stable clamping performance across –55°C to +175°C operating ranges.
1N5649A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-13
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40.2V
- Voltage - Breakdown (Min):
- 44.7V
- Voltage - Clamping (Max) @ Ipp:
- 64.8V
- Current - Peak Pulse (10/1000µs):
- 23.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13
1N5649A FAQ
1.How can I place an order for 1N5649A through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5649A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5649A reliable?
The price and inventory of 1N5649A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5649A is usually 5 days.
3.What payment methods are accepted for 1N5649A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5649A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5649A?
1N5649A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5649A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5649A?
For technical support, including 1N5649A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5649A requirements.
6.How does Aetrix verify that 1N5649A is sourced from the original manufacturer or authorized distributors?
All 1N5649A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5649A meets industry standards.
7.What is the process for return or replacement of 1N5649A?
All 1N5649A units undergo pre-shipment inspection (PSI). If there is an issue with 1N5649A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5649A part is unused and in its original packaging.
Return procedure for 1N5649A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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