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Microchip Technology 1N5655
- Part No.:
- 1N5655
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-202AA, DO-13, Axial
- Datasheet:
-
1N5655.pdf
- Description:
- TVS DIODE
- Quantity:
- Payment:
- Shipping:
Inventory:2,518
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Product details
Overview
1N5655 from Microchip (formerly Microsemi) is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-reliability surge protection in aerospace and industrial systems. It features a 66.4 V rated standoff voltage (VWM), 73.8 V minimum breakdown voltage (V(BR)), 118 A peak pulse current (IPP), and clamps transients to ≤113 V at 10/1000 µs waveform - enabling robust secondary lightning protection per IEC61000-4-5 Class 3 (42 Ω source impedance).
For engineers reviewing the 1N5655 datasheet, 1N5655 pinout, 1N5655 application, or 1N5655 equivalent, this component delivers verified 1500 W peak pulse power handling, sub-100 ps response time, and radiation-hardened performance per MicroNote 050 - critical for avionics, power supply input stages, and mission-critical control interfaces where ESD, EFT, and inductive switching transients must be suppressed without degradation.
Technical Context
The 1N5655 operates as a unidirectional avalanche diode, entering controlled breakdown when reverse voltage exceeds its V(BR) threshold of 73.8–90.2 V, limiting transient energy via low-impedance clamping. Its DO-13 metal-glass package ensures hermetic sealing and thermal stability across −55 °C to +175 °C operating range.
It is rated for 1500 W non-repetitive peak pulse power (10/1000 µs), with junction-to-lead thermal resistance of 50 °C/W and maximum standby leakage of 5 µA at VWM. The cathode is internally connected to the case, establishing fixed polarity for reliable board-level mounting and grounding.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Standoff Voltage) | 66.4 V - maximum continuous reverse voltage before conduction; sets minimum system operating voltage margin. |
| V(BR) @ I(BR) | 73.8–90.2 V @ 1 mA - precise avalanche onset range; defines minimum clamping trigger point. |
| VC @ IPP | 113 V @ 118 A - maximum clamped voltage during 10/1000 µs surge; determines protected circuit's voltage stress ceiling. |
| PPP (Peak Pulse Power) | 1500 W - energy-handling capacity for single transients; enables compliance with IEC61000-4-5 Class 3 (42 Ω). |
| TJ Range | −55 °C to +175 °C - extended temperature capability supports avionics, downhole, and military-grade environments. |
| Package | DO-13 (DO-202AA) - hermetically sealed metal-glass case with cathode-to-case polarity; enables high-reliability through-hole mounting. |
| Response Time | <100 ps - near-instantaneous turn-on ensures suppression before sensitive ICs experience overvoltage damage. |
Pinout & Package
DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically bonded to case and marked by diode symbol on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Transient return path | Connected to system ground or low-impedance return; carries full surge current during clamping. |
| Cathode (Lead 1 / Case) | Protected line connection | Internally tied to metal case; must be soldered to PCB ground plane or chassis for effective ESD/lightning shunting. |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional TVS architecture | Enables asymmetric protection on DC-biased lines (e.g., power inputs) without forward-conduction losses during normal operation. |
| 1500 W peak pulse power rating | Supports IEC61000-4-5 Class 3 surge immunity (42 Ω source) without derating at 25 °C lead temperature. |
| Hermetic DO-13 metal package | Eliminates moisture ingress and long-term parameter drift; certified for JAN/JANTXV military qualification with "A" suffix variants. |
| Radiation hardness | Inherently radiation-tolerant per MicroNote 050 - validated for total ionizing dose (TID) resilience in space and nuclear environments. |
| Sub-100 ps response time | Clamps transients before propagation into downstream logic or analog circuitry; prevents latch-up or gate oxide rupture in ICs. |
Applications
| Aerospace Power Distribution | Industrial Motor Drive Inputs |
|---|---|
Use Scenario: Protection of 28 VDC aircraft bus feeders against load dump, relay bounce, and secondary lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between bus rail and chassis ground to clamp transients below 113 V. Use Value: Ensures compliance with RTCA/DO-160 Section 22 Level 3 (42 Ω) while maintaining >66 V operational headroom. |
Use Scenario: Input-stage surge suppression on AC/DC power supplies feeding variable-frequency drives in factory automation. IC Role / Device Role / Timing Role: Primary transient limiter on rectified DC bus, absorbing inductive kickback from contactors and IGBT switching noise. Use Value: Prevents false tripping and MOSFET gate oxide failure by limiting voltage overshoot to ≤113 V during 118 A 10/1000 µs events. |
| Military Avionics Interfaces | Railway Signaling Power Supplies |
Use Scenario: ESD and EFT protection on MIL-STD-704-compliant 270 VDC power inputs for flight control computers. IC Role / Device Role / Timing Role: Standoff-rated TVS mounted directly at connector entry point to shunt fast transients (<100 ps) to chassis ground. Use Value: Meets IEC61000-4-2 Level 4 (15 kV air/8 kV contact) and IEC61000-4-4 burst immunity without degrading signal integrity. |
Use Scenario: Secondary lightning protection on 110 VDC signaling power feeds in EN 50121-4-compliant railway control cabinets. IC Role / Device Role / Timing Role: Class 3-compliant TVS on DC input rails, coordinated with upstream MOVs to handle multi-pulse surge sequences. Use Value: Sustains 1500 W peak power without thermal runaway, enabling repeatable protection across 0.01% duty cycle surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5655A | ±5% tighter V(BR) tolerance (77.9–86.5 V vs. 73.8–90.2 V); same DO-13 package and 1500 W rating. | Required for JANTXV-qualified designs needing MIL-PRF-19500/500 compliance and enhanced parametric consistency. | Select 1N5655A when military screening, lot traceability, or reduced V(BR) spread is mandated by system safety analysis. |
| SMCJ70A | Surface-mount SMC package; 70 V VWM, 113 V VC @ 131 A; same 1500 W rating but lower thermal resistance (junction-to-ambient). | Suitable for high-density PCBs where through-hole DO-13 footprint is prohibitive; lacks hermetic seal and radiation hardness. | Choose SMCJ70A for commercial industrial designs prioritizing layout density and cost, not radiation or long-term hermetic reliability. |
Compared with 1N5655, the 1N5655A offers tighter parametric control for mission-critical systems, while SMCJ70A provides surface-mount flexibility at the expense of hermeticity and radiation tolerance - making 1N5655 the optimal choice for aerospace and defense applications requiring proven DO-13 ruggedness.
Availability
1N5655 is available at Aetrix Electronics and suitable for aerospace power distribution, industrial motor drive inputs, military avionics interfaces, and railway signaling power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for 1N5655 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology acquired Microsemi in 2018 and maintains its high-reliability analog and discrete product portfolio, including radiation-hardened and military-qualified components.
The 1N5655 belongs to Microchip's legacy TVS diode family engineered for extreme-environment transient suppression - specifically targeting avionics, defense electronics, and infrastructure systems where failure is not an option.
FAQ
What is the maximum clamping voltage of the 1N5655 under a 10/1000 µs surge?
The 1N5655 clamps to a maximum of 113 V when subjected to its rated 118 A peak pulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at TA = 25 °C and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring downstream ICs remain within absolute maximum ratings.
Is the 1N5655 suitable for IEC61000-4-5 Class 3 secondary lightning protection?
Yes, the 1N5655 is explicitly rated for IEC61000-4-5 Class 3 secondary lightning protection with a 42 Ω source impedance, as confirmed in the manufacturer's technical data sheet. Its 1500 W peak pulse power rating and 113 V clamping voltage enable compliant protection of 28–70 V DC systems without additional staging components.
Does the 1N5655 have radiation-hardened characteristics?
Yes, the 1N5655 is inherently radiation-hardened per Microsemi MicroNote 050, demonstrating resilience to total ionizing dose (TID) effects. This characteristic is intrinsic to its DO-13 hermetic metal-glass construction and silicon process - making it suitable for avionics, satellite subsystems, and nuclear instrumentation where radiation-induced parameter shift must be avoided.
What is the polarity configuration and mounting requirement for the 1N5655?
The 1N5655 is a unidirectional TVS with cathode (marked by diode symbol on case) internally connected to the metal package. For proper operation, the case must be soldered to a low-impedance ground plane or chassis - Lead 1 (cathode/case) serves as the protected line terminal, while Lead 2 (anode) connects to system ground. Incorrect polarity or floating case connection will disable protection.
How does the 1N5655 compare to plastic-packaged TVS diodes like the 1N6267 series?
The 1N5655 uses a hermetically sealed DO-13 metal-glass package, offering superior long-term reliability, moisture resistance, and thermal stability versus plastic axial-leaded alternatives such as the 1N6267 series. While both share similar electrical specs, only the 1N5655 meets MIL-PRF-19500/500 requirements and supports JAN/JANTXV qualification - essential for defense and space applications.
1N5655 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-202AA, DO-13, Axial
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 66.4V
- Voltage - Breakdown (Min):
- 73.8V
- Voltage - Clamping (Max) @ Ipp:
- 118V
- Current - Peak Pulse (10/1000µs):
- 12.7A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13 (DO-202AA)
1N5655 FAQ
1.How can I place an order for 1N5655 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5655 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5655 reliable?
The price and inventory of 1N5655 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5655 is usually 5 days.
3.What payment methods are accepted for 1N5655?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5655 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5655?
1N5655 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5655 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5655?
For technical support, including 1N5655 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5655 requirements.
6.How does Aetrix verify that 1N5655 is sourced from the original manufacturer or authorized distributors?
All 1N5655 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5655 meets industry standards.
7.What is the process for return or replacement of 1N5655?
All 1N5655 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5655, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5655 part is unused and in its original packaging.
Return procedure for 1N5655:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5655 Tags
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