Microchip Technology 1N5656AE3
- Part No.:
- 1N5656AE3
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-202AA, DO-13, Axial
- Datasheet:
-
1N5656AE3.pdf
- Description:
- TVS DIODE 77.8VWM 125VC DO13
- Quantity:
- Payment:

- Shipping:

Inventory:7,861
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N5656AE3 from Microchip Technology is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-reliability surge protection in aerospace and industrial systems. It features a 73.8 V minimum breakdown voltage (VBR), 66.4 V rated standoff voltage (VWM), and clamps transients to ≤118 V at 12.7 A peak pulse current (IPP) under 10/1000 µs waveform, delivering 1500 W peak pulse power.
For engineers reviewing the 1N5656AE3 datasheet, 1N5656AE3 pinout, 1N5656AE3 application, or 1N5656AE3 equivalent, this device serves as a military-grade, radiation-hardened TVS for secondary lightning protection per IEC61000-4-5 (42 Ω, Class 1–4), ESD suppression per IEC61000-4-2, and fast-switching inductive transient suppression in avionics power rails and motor control interfaces.
Technical Context
The 1N5656AE3 operates as a unidirectional avalanche diode with cathode connected to case, requiring correct polarity orientation in series with protected lines. Its 50 °C/W junction-to-lead thermal resistance enables reliable operation up to +175 °C ambient, supported by solder tolerance of 260 °C for 10 s.
It exhibits a temperature coefficient of breakdown voltage (αVBR) of 0.106 %/°C and maintains ≤5 µA standby leakage current at VWM, ensuring minimal system loading during normal operation while responding in <100 ps to transient events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 66.4 V - Maximum continuous reverse operating voltage before avalanche conduction begins; sets minimum system rail compatibility. |
| VBR @ IBR | 73.8–81.9 V @ 1 mA - Breakdown threshold range defining turn-on consistency for transient clamping. |
| VC @ IPP | 118 V @ 12.7 A - Maximum clamped voltage during 10/1000 µs surge; determines worst-case stress on downstream ICs. |
| PPP | 1500 W - Peak pulse power handling capacity; supports robust protection against IEC61000-4-5 Class 4 surges. |
| IPP | 12.7 A - Peak surge current capability at rated clamping voltage; defines maximum energy absorption per event. |
| TJ Range | −55 °C to +175 °C - Extended temperature rating enabling use in engine compartments, avionics bays, and industrial enclosures. |
| Package | DO-13 (DO-202AA) - Hermetic metal-glass construction with tin-lead plating; provides MIL-PRF-19500/500 compliance and radiation hardness. |
Pinout & Package
DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically bonded to case and marked by diode symbol on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Transient current entry point | Connected to protected line; carries full surge current into avalanche region during clamping. |
| Cathode (Lead 1 / Case) | Reference and return path | Electrically tied to metal case; must be connected to system ground or low-impedance reference plane for effective clamping. |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional TVS architecture | Enables precise placement in DC-biased signal or power lines without reverse conduction during normal operation. |
| <100 ps response time | Clamps transients before sensitive logic or analog circuitry experiences overvoltage damage. |
| Hermetic DO-13 metal package | Provides long-term reliability in high-humidity, high-vibration, and radiation-exposed environments (per MicroNote 050). |
| MIL-PRF-19500/500 qualified "A" suffix | Guarantees tighter parametric tolerances and extended screening for JANTXV-level military applications. |
| IEC61000-4-5 Class 1–4 compliance (42 Ω source) | Validated performance across full secondary lightning test levels without external impedance matching networks. |
Applications
| Aerospace Avionics Power Rails | Industrial Motor Drive Control Boards |
|---|---|
Use Scenario: Protection of 28 V DC aircraft bus inputs against load dump, inductive kickback, and induced RF transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between bus input and ground to clamp surges before reaching DC-DC converters and flight control microcontrollers. Use Value: Withstand 1500 W pulses and operate from −55 °C to +175 °C, meeting DO-160 Section 22 requirements for airborne equipment. |
Use Scenario: Guarding gate driver ICs and position feedback circuits in servo motor controllers exposed to back-EMF spikes. IC Role / Device Role / Timing Role: Fast-clamping TVS on encoder signal lines and isolated power supplies to prevent latch-up or ESD-induced reset. Use Value: Sub-100 ps response ensures clamping occurs before 10 ns logic thresholds are exceeded, preserving real-time control integrity. |
| Railway Signaling Interface Modules | Defense Communications Equipment |
Use Scenario: Surge protection on 72 V DC track-side signaling lines subjected to lightning-induced coupling and switching transients. IC Role / Device Role / Timing Role: Primary protection element on field-side Ethernet PHY and RS-485 transceivers interfacing with outdoor infrastructure. Use Value: 118 V clamping voltage limits stress on 100 V-rated interface ICs while maintaining <5 µA leakage at nominal rail voltage. |
Use Scenario: Hardening of HF/VHF radio front-end power and antenna bias lines against EMP and EFT bursts in tactical radios. IC Role / Device Role / Timing Role: Standoff-rated TVS on regulated 15 V and 28 V supply rails feeding RF amplifiers and synthesizer ICs. Use Value: Radiation-hardened DO-13 construction ensures no parametric shift after total ionizing dose exposure up to 100 krad(Si). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5656A | No "E3" suffix; standard tin-lead finish without RoHS exemption documentation. | Same electrical specs and DO-13 package; suitable for non-RoHS-restricted commercial programs. | Select 1N5656A when RoHS compliance is not required and cost optimization is prioritized. |
| SMBJ70A | Surface-mount SMB package; 70 V VWM, 113 V VC @ 13.3 A; lower thermal resistance (junction-to-ambient). | Designed for automated assembly; lacks hermetic seal and radiation hardness; not MIL-qualified. | Choose SMBJ70A only for space-constrained, high-volume consumer or telecom designs where military reliability is not mandated. |
Compared with 1N5656AE3, the 1N5656A offers identical performance without RoHS documentation overhead, while SMBJ70A trades hermeticity, radiation tolerance, and through-hole robustness for SMT manufacturability and slightly tighter clamping-making it unsuitable for avionics or defense deployments.
Availability
1N5656AE3 is available at Aetrix Electronics and suitable for aerospace avionics, railway signaling, defense communications, and industrial motor drive applications requiring stable component supply, long-term obsolescence management, and traceable military-grade sourcing.
Supply support for 1N5656AE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology (formerly Microsemi) is a U.S.-based semiconductor manufacturer specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N5656AE3 belongs to Microchip's legacy JAN/JANTXV-qualified TVS diode family, engineered specifically for mission-critical transient suppression in environments demanding MIL-PRF-19500/500 compliance and inherent radiation hardness.
FAQ
What is the standoff voltage (VWM) specification for the 1N5656AE3?
The 1N5656AE3 has a rated standoff voltage (VWM) of 66.4 V, meaning it remains nonconductive under continuous reverse bias up to this level. This value ensures compatibility with 28 V and 72 V DC systems where transient margins require ≥2× nominal rail voltage. The 1N5656AE3 must be selected so that VWM exceeds the maximum steady-state operating voltage of the protected line.
Does the 1N5656AE3 meet IEC61000-4-5 secondary lightning standards?
Yes, the 1N5656AE3 is validated for IEC61000-4-5 secondary lightning testing with 42 Ω source impedance across Classes 1–4, as documented in the T4-LDS-0096 datasheet. Its 1500 W peak pulse power and 118 V clamping voltage ensure compliance without additional series impedance, making it suitable for rail-side signaling and avionics bus protection where standardized surge immunity is mandatory.
Is the 1N5656AE3 hermetically sealed, and what is its package type?
Yes, the 1N5656AE3 uses a hermetically sealed DO-13 (DO-202AA) metal-glass package with tin-lead plated leads. This construction meets MIL-PRF-19500/500 requirements, provides intrinsic radiation hardness per MicroNote 050, and ensures long-term reliability in high-humidity and high-vibration environments where plastic packages would degrade.
What is the maximum clamping voltage (VC) of the 1N5656AE3 under a 10/1000 µs surge?
The 1N5656AE3 clamps to a maximum of 118 V when subjected to its rated 12.7 A peak pulse current (IPP) under the standard 10/1000 µs waveform. This VC value directly determines the peak stress imposed on downstream components, and must be verified against the absolute maximum ratings of protected ICs such as RS-485 transceivers or ADC front-ends.
How does the 1N5656AE3 differ from the non-"A" version (e.g., 1N5656)?
The "A" suffix in 1N5656AE3 denotes tighter parametric tolerances on breakdown voltage (VBR) and enhanced screening per MIL-PRF-19500/500, qualifying it for JANTXV-level military use. The base 1N5656 lacks these controls and is not approved for high-reliability defense or aerospace programs where lot traceability and extended temperature validation are required.
1N5656AE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-202AA, DO-13, Axial
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 77.8V
- Voltage - Breakdown (Min):
- 86.5V
- Voltage - Clamping (Max) @ Ipp:
- 125V
- Current - Peak Pulse (10/1000µs):
- 12A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13 (DO-202AA)
1N5656AE3 FAQ
1.How can I place an order for 1N5656AE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5656AE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5656AE3 reliable?
The price and inventory of 1N5656AE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5656AE3 is usually 5 days.
3.What payment methods are accepted for 1N5656AE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5656AE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5656AE3?
1N5656AE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5656AE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5656AE3?
For technical support, including 1N5656AE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5656AE3 requirements.
6.How does Aetrix verify that 1N5656AE3 is sourced from the original manufacturer or authorized distributors?
All 1N5656AE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5656AE3 meets industry standards.
7.What is the process for return or replacement of 1N5656AE3?
All 1N5656AE3 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5656AE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5656AE3 part is unused and in its original packaging.
Return procedure for 1N5656AE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5656AE3 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

