Microchip Technology 1N5656A/TR

Overview

1N5656A/TR from Microchip Technology is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-energy surge protection in aerospace, avionics, and industrial systems. It features a 73.8 V minimum breakdown voltage (V_BR), 66.4 V rated standoff voltage (V_WM), 118 V maximum clamping voltage (V_C) at 12.7 A peak pulse current (I_PP), and 1500 W peak pulse power rating per 10/1000 µs waveform.

For engineers reviewing the 1N5656A/TR datasheet, 1N5656A/TR pinout, 1N5656A/TR application, or 1N5656A/TR equivalent, this device serves as a military-grade, radiation-hardened TVS solution for secondary lightning (IEC61000-4-5), ESD (IEC61000-4-2), and EFT (IEC61000-4-4) protection where fast response (<100 ps), high reliability, and operation across –55°C to +175°C are required.

Technical Context

The 1N5656A/TR operates as a unidirectional avalanche diode, entering controlled breakdown above its 66.4 V standoff voltage to clamp transients while maintaining low leakage (<5 µA at V_WM). Its DO-13 metal-glass package provides hermetic sealing and inherent radiation hardness per MicroNote 050, enabling use in harsh environments including airborne avionics and space-qualified subsystems.

It delivers 1500 W non-repetitive peak pulse power with <100 ps response time, supporting IEC61000-4-5 Class 1–4 secondary lightning protection depending on source impedance (2 Ω to 42 Ω). Thermal resistance is 50°C/W junction-to-lead (0.375" from body), and forward surge current rating is 200 A (8.3 ms half-sine).

Key Specifications

Pinout & Package

DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically connected to case and marked by diode symbol on body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS applications.

Compared with 1N5656A/TR, SMCJ75A offers SMT compatibility but sacrifices hermeticity and radiation resilience, while 1N5656 lacks military screening-making 1N5656A/TR the sole choice when DO-13 form factor, JANTXV compliance, and space-grade hardness are mandatory.

Availability

1N5656A/TR is available at Aetrix Electronics and suitable for aerospace avionics, military vehicle electronics, industrial motor control, and satellite power management requiring stable component supply with full traceability and long-term obsolescence planning.

Supply support for 1N5656A/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a global semiconductor company delivering microcontrollers, analog, FPGA, and timing solutions with emphasis on reliability, security, and longevity.

The 1N5656A/TR belongs to Microchip's legacy TVS diode family originally developed by Microsemi, targeting high-reliability transient suppression in defense, aerospace, and critical infrastructure systems where hermetic packaging and radiation tolerance are essential.

FAQ

What is the clamping voltage of the 1N5656A/TR under a standard 10/1000 µs surge?

The 1N5656A/TR has a maximum clamping voltage (V_C) of 118 V when subjected to its rated peak pulse current of 12.7 A under the 10/1000 µs waveform. This value is guaranteed across temperature and lifetime, and defines the upper voltage limit imposed on protected circuitry during surge events. The 1N5656A/TR achieves this clamping performance while maintaining low leakage (<5 µA) at its 66.4 V standoff voltage.

Is the 1N5656A/TR suitable for IEC61000-4-5 secondary lightning protection?

Yes, the 1N5656A/TR is explicitly rated for IEC61000-4-5 secondary lightning protection across multiple classes: Class 1 (42 Ω source), Class 2 (12 Ω), and Class 3 (2 Ω), as confirmed in the official datasheet. Its 1500 W peak pulse power and sub-100 ps response enable robust suppression of coupled lightning surges in avionics, vehicle ECUs, and industrial control cabinets where grounding integrity may be compromised.

Does the 1N5656A/TR have radiation hardness certification?

Yes, the 1N5656A/TR is inherently radiation hard per Microsemi MicroNote 050, which documents its performance under total ionizing dose (TID) exposure. This makes the 1N5656A/TR suitable for low-Earth orbit (LEO) satellite power systems and high-altitude avionics where single-event effects and cumulative radiation damage are design constraints-not just a commercial-grade alternative.

What does the "TR" suffix indicate in 1N5656A/TR?

"TR" denotes tape-and-reel packaging per EIA-296 standard, enabling automated through-hole insertion in high-volume manufacturing. The 1N5656A/TR is supplied in carrier tape with proper orientation (cathode marked), allowing direct feed into axial lead insertion machines. This packaging option maintains full JANTXV qualification and does not affect electrical or thermal specifications of the 1N5656A/TR device itself.

How does the DO-13 package of the 1N5656A/TR differ from plastic TVS diodes like SMAJ75A?

The DO-13 package of the 1N5656A/TR is a welded, hermetically sealed metal-glass construction, unlike the plastic-bodied SMAJ75A. This gives the 1N5656A/TR superior moisture resistance, thermal conductivity (50°C/W junction-to-lead), and mechanical robustness under thermal cycling and vibration-key for aerospace and defense deployments where long-term reliability trumps cost or footprint savings.