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Microchip Technology 1N5657
- Part No.:
- 1N5657
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-13
- Datasheet:
-
1N5657.pdf
- Description:
- TVS DIODE 81VWM 144VC DO13
- Quantity:
- Payment:
- Shipping:
Inventory:2,314
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Product details
Overview
1N5657 from Microchip (formerly Microsemi) is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-reliability surge protection in aerospace, avionics, and industrial systems. It features a 81.0 V rated standoff voltage (VWM), 90–110 V breakdown voltage (V(BR)), 144 A peak pulse current (IPP), and clamps transients to ≤144 V at 10/1000 µs waveform - enabling robust secondary lightning and ESD protection per IEC61000-4-2/4-4/4-5.
For engineers reviewing the 1N5657 datasheet, 1N5657 pinout, 1N5657 application, or 1N5657 equivalent, this device is selected for high-temperature (-55°C to +175°C), high-power (1500 W peak), fast-response (<100 ps) overvoltage suppression where hermetic sealing and radiation hardness are mission-critical.
Technical Context
The 1N5657 operates as a unidirectional avalanche diode, entering controlled breakdown above its VWM to clamp transient energy into the case. Its DO-13 package provides low thermal resistance (50°C/W junction-to-lead) and inherent radiation hardness per MicroNote 050, supporting operation up to +175°C ambient.
It delivers 1500 W non-repetitive peak pulse power at 10/1000 µs with <100 ps response time, and is rated for 200 A forward surge current (8.3 ms half-sine). Polarity is defined by cathode connection to the metal case, marked with a diode symbol on the body.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Standoff Voltage) | 81.0 V - maximum continuous reverse voltage before conduction; sets minimum system operating voltage threshold. |
| V(BR) (Breakdown Voltage) | 90–110 V @ 1 mA - guaranteed avalanche onset range; ensures predictable clamping initiation under surge. |
| VC (Clamping Voltage) | 144 V @ 144 A - maximum voltage seen across terminals during 10/1000 µs transient; defines worst-case stress on protected circuitry. |
| IPP (Peak Pulse Current) | 144 A - peak current capability at 10/1000 µs; determines survivability against IEC61000-4-5 Class 1–4 surges. |
| PPP (Peak Pulse Power) | 1500 W - transient energy handling capacity; enables protection of high-energy inductive switching events. |
| Response Time | <100 ps - near-instantaneous turn-on; critical for suppressing ESD and fast-rising RF-induced transients. |
| Operating Temperature | -55°C to +175°C - supports deployment in extreme environments including engine bays and avionics bays. |
Pinout & Package
Package: DO-13 (DO-202AA), hermetically sealed metal-glass case with tin-lead plated leads; cathode connected to case and marked with diode symbol.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Transient current entry point | Connected to protected line; carries full surge current into avalanche junction. |
| Cathode (Lead 1 / Case) | Reference and return path | Electrically tied to metal case; must be connected to system ground or low-impedance reference plane. |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic DO-13 metal package | Enables operation in high-humidity, vacuum, and radiation-intensive environments without parameter drift or failure. |
| 1500 W peak pulse power | Supports protection against severe inductive load dumps and secondary lightning surges per IEC61000-4-5. |
| <100 ps response time | Prevents overshoot during nanosecond-scale ESD events (IEC61000-4-2) and RF coupling transients. |
| Inherent radiation hardness | Validated per MicroNote 050; suitable for space-qualified and airborne avionics without additional shielding. |
| Military qualification path | JAN/JANTX/JANTXV versions available (e.g., JANTXV1N5657A) meeting MIL-PRF-19500/500 for tighter tolerances. |
Applications
| Aerospace Avionics Protection | Industrial Motor Drive Control |
|---|---|
Use Scenario: Protecting flight control sensor interfaces and ARINC 429 data lines from induced lightning transients and ESD during ground handling. IC Role / Device Role / Timing Role: Unidirectional TVS clamping element placed at connector entry points to shunt surge energy to chassis ground. Use Value: Maintains signal integrity under IEC61000-4-5 Class 1–4 surges (42 Ω, 12 Ω, and 2 Ω source impedances) while surviving -55°C to +175°C thermal cycling. |
Use Scenario: Safeguarding PLC I/O modules and encoder feedback lines against inductive kickback from solenoid valves and contactors. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 24 V DC control rails, absorbing 1500 W transients without degradation. Use Value: Eliminates need for external heat sinking due to 50°C/W junction-to-lead thermal resistance and hermetic reliability over 10+ year deployments. |
| Railway Signaling Systems | Defense Vehicle Power Management |
Use Scenario: Shielding track-side signaling electronics from electromagnetic interference caused by pantograph arcing and traction motor commutation. IC Role / Device Role / Timing Role: Standoff-voltage-matched TVS (VWM = 81.0 V) installed across 72 V nominal battery-fed circuits. Use Value: Clamps transients to ≤144 V within 100 ps, preventing latch-up or damage to downstream CAN transceivers and microcontrollers. |
Use Scenario: Hardening 28 V DC power distribution units in armored vehicles against EMP-like surges and load dump events. IC Role / Device Role / Timing Role: High-reliability transient suppressor mounted directly to chassis ground plane via cathode-case connection. Use Value: Radiation-hardened construction and military-grade variants (JANTXV1N5657A) ensure continuity in mission-critical defense platforms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5657A | Tighter V(BR) tolerance (99–105 V vs. 90–110 V); same DO-13 package and electrical ratings. | Preferred for precision-clamp designs requiring reduced V(BR) variance across temperature and lot. | Select 1N5657A when ±5% V(BR) control is required; otherwise 1N5657 offers broader margin for general-purpose use. |
| SMCJ85A | Surface-mount SMC package; 85 V VWM, 135 A IPP, 1500 W PPP; plastic encapsulation, not hermetic. | Suitable for commercial/industrial PCBs where board space and reflow assembly are priorities over radiation or vacuum performance. | Choose SMCJ85A for cost-sensitive, high-volume surface-mount designs; retain 1N5657 for hermeticity, radiation hardness, or through-hole ruggedness. |
Compared with 1N5657A, the base 1N5657 offers wider V(BR) tolerance but identical surge capability and thermal performance; versus SMCJ85A, it trades PCB footprint for superior environmental resilience, making it irreplaceable in aerospace and defense contexts where hermetic sealing and radiation tolerance are non-negotiable.
Availability
1N5657 is available at Aetrix Electronics and suitable for aerospace avionics, railway signaling, and defense vehicle power management requiring stable component supply, long-term obsolescence mitigation, and traceable military-grade sourcing.
Supply support for 1N5657 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology acquired Microsemi in 2018 and maintains its high-reliability analog and discrete product portfolio, including radiation-hardened and military-qualified components for demanding environments.
The 1N5657 belongs to Microchip's legacy TVS diode family originally developed by Microsemi for aerospace and defense applications, emphasizing hermetic packaging, extreme temperature operation, and compliance with MIL-PRF-19500/500.
FAQ
What is the standoff voltage (VWM) of the 1N5657?
The 1N5657 has a rated standoff voltage (VWM) of 81.0 V, meaning it remains non-conductive up to this reverse DC or continuous peak voltage. This value ensures compatibility with 72 V nominal systems while providing margin against normal operating fluctuations before avalanche conduction begins.
Does the 1N5657 meet IEC61000-4-5 for lightning surge protection?
Yes, the 1N5657 is validated for secondary lightning protection per IEC61000-4-5 across multiple classes: Class 1 (42 Ω source) up to 1N5658A, Class 2 (12 Ω) up to 1N5651A, and Class 2 (2 Ω) up to 1N5642A. Its 144 A IPP and 144 V VC enable compliant clamping performance in these test configurations.
Is the 1N5657 hermetically sealed, and why does that matter?
Yes, the 1N5657 uses a welded, hermetically sealed DO-13 metal-glass package. This prevents moisture ingress, eliminates parameter drift under thermal cycling, and ensures long-term reliability in vacuum, high-humidity, or corrosive environments - essential for avionics and space-qualified systems.
What is the thermal resistance of the 1N5657, and how does it affect layout?
The 1N5657 has a junction-to-lead thermal resistance of 50°C/W when measured at 0.375 inches (10 mm) from the case. This low value allows efficient heat transfer to the PCB ground plane or heatsink via the cathode-connected case, reducing need for oversized copper pours in high-reliability layouts.
Can the 1N5657 be used for ESD protection per IEC61000-4-2?
Yes, the 1N5657 clamps transients in less than 100 ps and is explicitly cited in its datasheet for ESD protection per IEC61000-4-2. Its fast response and 144 V clamping voltage at 144 A make it effective for safeguarding sensitive inputs in avionics and industrial controllers against ±8 kV contact and ±15 kV air discharge events.
1N5657 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-13
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 81V
- Voltage - Breakdown (Min):
- 90V
- Voltage - Clamping (Max) @ Ipp:
- 144V
- Current - Peak Pulse (10/1000µs):
- 10.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13
1N5657 FAQ
1.How can I place an order for 1N5657 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5657 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5657 reliable?
The price and inventory of 1N5657 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5657 is usually 5 days.
3.What payment methods are accepted for 1N5657?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5657 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5657?
1N5657 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5657 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5657?
For technical support, including 1N5657 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5657 requirements.
6.How does Aetrix verify that 1N5657 is sourced from the original manufacturer or authorized distributors?
All 1N5657 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5657 meets industry standards.
7.What is the process for return or replacement of 1N5657?
All 1N5657 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5657, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5657 part is unused and in its original packaging.
Return procedure for 1N5657:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5657 Tags
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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