Microchip Technology 1N5657A
- Part No.:
- 1N5657A
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-13
- Datasheet:
-
1N5657A.pdf
- Description:
- TVS DIODE 85.5VWM 137VC DO13
- Quantity:
- Payment:

- Shipping:

Inventory:2,930
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N5657A from Microchip (formerly Microsemi) is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-energy surge protection in aerospace, avionics, and industrial systems. It features a 90 V rated standoff voltage (VWM), 100 V minimum breakdown voltage (V(BR)), 144 A peak pulse current (IPP), 1500 W peak pulse power (10/1000 µs), and clamps transients to ≤144 V at rated current - enabling robust secondary lightning and ESD protection per IEC61000-4-2/4-4/4-5.
For engineers reviewing the 1N5657A datasheet, 1N5657A pinout, 1N5657A application, or 1N5657A equivalent, this device serves as a military-grade, through-hole TVS solution where fast response (<100 ps), radiation hardness, and stable operation from –55°C to +175°C are critical for mission-critical power rail and signal line protection.
Technical Context
The 1N5657A operates as a unidirectional avalanche diode, entering controlled breakdown above its 90 V standoff voltage to clamp transient overvoltages while maintaining low leakage (<5 µA at VWM). Its DO-13 hermetic metal-glass package ensures reliability under thermal cycling, humidity, and radiation exposure - validated per MIL-PRF-19500/500 for JANTXV qualification.
It delivers 1500 W peak pulse power with <100 ps response time and exhibits a +0.106 %/°C temperature coefficient of breakdown voltage, supporting stable clamping across wide ambient ranges. Thermal resistance is 50°C/W junction-to-lead (at 10 mm lead length), enabling effective heat dissipation in high-reliability through-hole layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Standoff Voltage) | 90 V - maximum continuous reverse operating voltage before avalanche onset; selected to exceed system nominal rail voltage (e.g., 72 V DC aircraft bus). |
| V(BR) @ I(BR) | 100–110 V @ 1 mA - guaranteed avalanche initiation range; ensures predictable turn-on margin above VWM. |
| VC @ IPP | 144 V @ 144 A - maximum clamped voltage during 10/1000 µs surge; defines worst-case voltage seen by protected circuitry. |
| PPP (Peak Pulse Power) | 1500 W - energy-handling capacity for standardized lightning surges; supports Class 1–4 IEC61000-4-5 testing with 2–42 Ω source impedance. |
| ID @ VWM | <5 µA - ultra-low standby leakage; minimizes power loss and avoids false triggering in high-impedance sensing or bias networks. |
| Response Time | <100 ps - enables suppression of ESD events (IEC61000-4-2) and fast-rising EFT bursts (IEC61000-4-4) before damage occurs. |
| Operating Temp | –55°C to +175°C - qualified for extreme environments including engine bays, avionics bays, and downhole equipment. |
Pinout & Package
Package: DO-13 (DO-202AA), hermetically sealed metal-glass case with tin-lead plated leads. Cathode is connected to the metal case and marked with a diode symbol on the body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Transient current entry point | Connected to protected line (e.g., power rail or signal); carries full surge current into the diode junction. |
| Cathode (Lead 1 / Case) | Clamped output reference | Internally bonded to metal case; must be connected to system ground or return path to complete clamping loop. |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic DO-13 metal package | Enables operation in vacuum, high-humidity, and radiation-intensive environments (inherently radiation-hard per MicroNote 050). |
| JANTXV qualification option | Available as JANTXV1N5657A - meets MIL-PRF-19500/500 for screening, testing, and traceability in defense/aerospace programs. |
| 1500 W peak pulse rating | Supports repeated 10/1000 µs surges up to 1500 W at TL = 25°C with ≤0.01% duty cycle - sufficient for secondary lightning per IEC61000-4-5. |
| Ultra-fast <100 ps response | Clamps ESD (±15 kV contact) and EFT (±4 kV) transients before IC latch-up or gate oxide rupture occurs. |
| Polarity marking & case bonding | Cathode-to-case connection simplifies PCB grounding; diode symbol marking ensures correct orientation during manual or automated assembly. |
Applications
| Aircraft Power Distribution | Industrial Motor Drive Control |
|---|---|
Use Scenario: Protection of 28 V and 72 V DC distribution buses against load dump, relay switching spikes, and induced lightning surges in commercial and military aircraft. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed across bus rails to clamp transients to safe levels before they reach downstream converters and avionics modules. Use Value: Maintains VWM = 90 V margin above 72 V nominal bus, clamps to ≤144 V during 144 A surges, and survives –55°C to +175°C thermal cycling in wing-mounted electronics bays. |
Use Scenario: Guarding PLC I/O lines and gate drive circuits against inductive kickback from solenoids, contactors, and variable-frequency drives. IC Role / Device Role / Timing Role: Through-hole TVS mounted directly at connector entries to shunt surge energy to chassis ground before it propagates into logic-level circuitry. Use Value: Sub-100 ps response prevents latch-up in microcontrollers; 1500 W rating handles repetitive 10/1000 µs transients common in factory automation environments. |
| Avionics Sensor Interfaces | Military Vehicle Electronics |
Use Scenario: Shielding analog sensor inputs (e.g., pressure, temperature) in flight control systems from RF-induced transients and electrostatic discharge. IC Role / Device Role / Timing Role: Low-leakage (≤5 µA) unidirectional TVS placed adjacent to op-amp inputs to prevent input stage damage without degrading signal integrity. Use Value: Standby current negligible in high-impedance sensor bridges; hermetic DO-13 package resists moisture ingress and outgassing in sealed avionics enclosures. |
Use Scenario: Surge hardening of communication ports (MIL-STD-1553, RS-422) and power inputs in tracked vehicle command systems exposed to EMP and battlefield EMI. IC Role / Device Role / Timing Role: JANTXV-qualified TVS used in conjunction with filters to meet MIL-STD-461G CS115/CS116 requirements for conducted transients. Use Value: Radiation hardness and extended temperature range ensure uninterrupted operation during sustained desert or arctic deployment; DO-13 mechanical robustness withstands vibration and shock. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ90A | Surface-mount SMC package; same 90 V VWM but lower 1000 W PPP rating and higher 150 V VC. | Used where board space is constrained and reflow assembly is preferred; lacks hermetic sealing and radiation hardness. | Select when cost, size, or automated assembly outweighs military environmental requirements. |
| 1N5657 | Commercial-grade version; identical electrical specs but no MIL-PRF-19500/500 qualification or radiation hardness validation. | Suitable for non-mission-critical industrial controls where JANTXV traceability and extended screening are unnecessary. | Choose for cost-sensitive designs with standard commercial reliability expectations and no avionics/military certification needs. |
Compared with SMCJ90A and 1N5657, the 1N5657A uniquely combines hermetic DO-13 packaging, JANTXV qualification, radiation hardness, and full 1500 W surge capability - making it the only option for certified airborne and high-reliability embedded systems requiring zero field failure under extreme stress.
Availability
1N5657A is available at Aetrix Electronics and suitable for aircraft power distribution, industrial motor drive control, avionics sensor interfaces, and military vehicle electronics requiring stable component supply across long production lifecycles and stringent environmental compliance.
Supply support for 1N5657A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology acquired Microsemi in 2018 and now manufactures high-reliability analog and discrete components, including radiation-hardened and military-qualified semiconductors for aerospace, defense, and industrial markets.
The 1N5657A belongs to Microchip's legacy TVS diode family originally developed by Microsemi, engineered specifically for high-energy transient suppression in safety-critical systems where hermeticity, temperature resilience, and MIL-spec qualification are mandatory.
FAQ
What is the standoff voltage (VWM) of the 1N5657A and how does it relate to system design?
The 1N5657A has a rated standoff voltage (VWM) of 90 V, meaning it remains nonconductive below this reverse voltage. This value is selected to exceed the maximum continuous operating voltage of the protected circuit - for example, a 72 V DC aircraft bus - ensuring reliable blocking during normal operation while allowing rapid avalanche conduction during transients. Designers must verify that system peak voltage never exceeds VWM to avoid premature wear or leakage increase.
Is the 1N5657A suitable for ESD protection per IEC61000-4-2?
Yes, the 1N5657A is explicitly validated for ESD protection per IEC61000-4-2 due to its sub-100 ps response time and low clamping voltage (144 V at 144 A). Its ability to limit voltage rise before sensitive CMOS inputs reach destructive thresholds makes it appropriate for protecting avionics data lines, sensor interfaces, and control logic - especially where hermetic packaging adds reliability in harsh electromagnetic environments.
Does the 1N5657A have military qualification, and what does "JANTXV" signify?
The base 1N5657A is the commercial "A"-suffix variant; adding the JANTXV prefix yields JANTXV1N5657A - a fully MIL-PRF-19500/500 qualified part with enhanced screening, lot traceability, and extended temperature validation. JANTXV denotes the highest level of military qualification, including burn-in, temperature cycling, and radiation hardness assurance - required for flight-critical avionics and defense electronics programs.
How does the DO-13 package of the 1N5657A differ from plastic TVS diodes like the 1N6267 series?
The 1N5657A uses a hermetically sealed DO-13 metal-glass package, offering superior thermal conductivity (50°C/W junction-to-lead), radiation hardness, and long-term stability in humid or vacuum conditions. In contrast, plastic axial-leaded equivalents like the 1N6267 series use epoxy encapsulation, which limits thermal performance, outgasses under vacuum, and lacks inherent radiation tolerance - making the 1N5657A the preferred choice for aerospace and high-reliability deployments.
What is the maximum clamping voltage (VC) of the 1N5657A and why is it critical for circuit protection?
The 1N5657A has a maximum clamping voltage (VC) of 144 V at its rated peak pulse current of 144 A (10/1000 µs waveform). This value represents the highest voltage imposed on the protected circuit during a surge event - directly determining whether downstream components (e.g., regulators, microcontrollers, transceivers) remain within their absolute maximum ratings. A lower VC reduces risk of overvoltage damage, making this spec essential for selecting appropriate protection margins.
1N5657A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-13
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 85.5V
- Voltage - Breakdown (Min):
- 95V
- Voltage - Clamping (Max) @ Ipp:
- 137V
- Current - Peak Pulse (10/1000µs):
- 11A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13
1N5657A FAQ
1.How can I place an order for 1N5657A through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5657A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5657A reliable?
The price and inventory of 1N5657A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5657A is usually 5 days.
3.What payment methods are accepted for 1N5657A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5657A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5657A?
1N5657A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5657A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5657A?
For technical support, including 1N5657A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5657A requirements.
6.How does Aetrix verify that 1N5657A is sourced from the original manufacturer or authorized distributors?
All 1N5657A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5657A meets industry standards.
7.What is the process for return or replacement of 1N5657A?
All 1N5657A units undergo pre-shipment inspection (PSI). If there is an issue with 1N5657A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5657A part is unused and in its original packaging.
Return procedure for 1N5657A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5657A Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

